FR2453501A1 - Procede de realisation d'un composant a effet de champ - Google Patents

Procede de realisation d'un composant a effet de champ

Info

Publication number
FR2453501A1
FR2453501A1 FR8008887A FR8008887A FR2453501A1 FR 2453501 A1 FR2453501 A1 FR 2453501A1 FR 8008887 A FR8008887 A FR 8008887A FR 8008887 A FR8008887 A FR 8008887A FR 2453501 A1 FR2453501 A1 FR 2453501A1
Authority
FR
France
Prior art keywords
semiconductor
insulating layer
region
conductivity
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8008887A
Other languages
English (en)
Other versions
FR2453501B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of FR2453501A1 publication Critical patent/FR2453501A1/fr
Application granted granted Critical
Publication of FR2453501B1 publication Critical patent/FR2453501B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

Ce procédé consiste à former une couche isolante de manière à couvrir une partie d'une surface d'un semi-conducteur d'un premier type de conductibilité, pour masquer la partie sous-jacente de ce semi-conducteur et exposer des parties du semi-conducteur voisines de la couche isolante, à implanter des ions susceptibles de former un type opposé de conductibilité dans le semi-conducteur, dans les parties exposées de ce semi-conducteur, de manière à former des régions de source et de drain du composant, à amener un produit d'attaque chimique en contact avec la couche isolante, en réduisant la surface de la couche isolante couvrant le semi-conducteur et en augmentant la séparation entre la région de source et une région de dérivation disposée au-dessous de la couche isolante attaquée chimiquement, exposant une région de grille contiguë de la région de source et de la région de dérivation, et à implanter des ions suceptibles d'établir une région du premier type de conductibilité dans le semi-conducteur, dans la région de grille exposée par la couche isolante attaquée chimiquement.
FR8008887A 1978-12-15 1980-04-21 Procede de realisation d'un composant a effet de champ Granted FR2453501A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US96990678A 1978-12-15 1978-12-15

Publications (2)

Publication Number Publication Date
FR2453501A1 true FR2453501A1 (fr) 1980-10-31
FR2453501B1 FR2453501B1 (fr) 1984-09-07

Family

ID=25516148

Family Applications (2)

Application Number Title Priority Date Filing Date
FR7930817A Granted FR2445618A1 (fr) 1978-12-15 1979-12-17 Composant semi-conducteur et son procede de fabrication
FR8008887A Granted FR2453501A1 (fr) 1978-12-15 1980-04-21 Procede de realisation d'un composant a effet de champ

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR7930817A Granted FR2445618A1 (fr) 1978-12-15 1979-12-17 Composant semi-conducteur et son procede de fabrication

Country Status (6)

Country Link
JP (1) JPS5583270A (fr)
CA (1) CA1138571A (fr)
DE (1) DE2950413A1 (fr)
FR (2) FR2445618A1 (fr)
GB (1) GB2038088B (fr)
IT (1) IT1120149B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2530079A1 (fr) * 1982-07-08 1984-01-13 Gen Electric Procede de fabrication de dispositifs a semi-conducteurs de puissance a grille isolee

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3040775A1 (de) * 1980-10-29 1982-05-13 Siemens AG, 1000 Berlin und 8000 München Mis-gesteuertes halbleiterbauelement
US4442589A (en) * 1981-03-05 1984-04-17 International Business Machines Corporation Method for manufacturing field effect transistors
JPH0427799Y2 (fr) * 1986-08-28 1992-07-03
US5151374A (en) * 1991-07-24 1992-09-29 Industrial Technology Research Institute Method of forming a thin film field effect transistor having a drain channel junction that is spaced from the gate electrode
US5604139A (en) * 1994-02-10 1997-02-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JP2007085210A (ja) * 2005-09-21 2007-04-05 Hitachi Ltd 水車又はポンプ水車

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5636585B2 (fr) * 1973-07-02 1981-08-25
US4001048A (en) * 1974-06-26 1977-01-04 Signetics Corporation Method of making metal oxide semiconductor structures using ion implantation
US4058822A (en) * 1975-05-30 1977-11-15 Sharp Kabushiki Kaisha High voltage, low on-resistance diffusion-self-alignment metal oxide semiconductor device and manufacture thereof
JPS5284981A (en) * 1976-01-06 1977-07-14 Mitsubishi Electric Corp Production of insulated gate type semiconductor device
US4062699A (en) * 1976-02-20 1977-12-13 Western Digital Corporation Method for fabricating diffusion self-aligned short channel MOS device
JPS605075B2 (ja) * 1976-12-29 1985-02-08 松下電器産業株式会社 Ｍｏｓ型半導体装置およびその製造方法
DE2703877C2 (de) * 1977-01-31 1982-06-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen MIS-Transistor von kurzer Kanallänge und Verfahren zu seiner Herstellung
JPS53135581A (en) * 1977-05-02 1978-11-27 Hitachi Ltd Manufacture for mos semiconductor device
US4173818A (en) * 1978-05-30 1979-11-13 International Business Machines Corporation Method for fabricating transistor structures having very short effective channels

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2530079A1 (fr) * 1982-07-08 1984-01-13 Gen Electric Procede de fabrication de dispositifs a semi-conducteurs de puissance a grille isolee

Also Published As

Publication number Publication date
DE2950413C2 (fr) 1989-12-28
GB2038088A (en) 1980-07-16
CA1138571A (fr) 1982-12-28
FR2445618A1 (fr) 1980-07-25
IT7951008A0 (it) 1979-12-06
IT1120149B (it) 1986-03-19
FR2453501B1 (fr) 1984-09-07
FR2445618B1 (fr) 1985-03-01
JPS6326553B2 (fr) 1988-05-30
DE2950413A1 (de) 1980-06-26
GB2038088B (en) 1983-05-25
JPS5583270A (en) 1980-06-23

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