JPS54136276A - Manufacture for semiconductor device - Google Patents

Abstract

PURPOSE: To make fine the elements and to make uniform the element characteristics, by determining the relative location of source, drain regions and openings of ohmic contact for those electrodes with one exposure process.

CONSTITUTION: The element separation insulation film 2 is provided at the edge of the P type semiconductor substrate 1, the gate insulation film 3 is coated between them, forming the polycrystal Si layer 40 being the gate on all the surfaces, the Si₃N₄ film 5 and resist film 6. Next, the films 6 and 5 are taken as specified pattern, the layer 40 exposed by taking those as masks is side-etched to narrow the width of the layer 40, and the exposed part of the film 3 is eliminated by using the ion beam 1B. After that, in the substrate 1 exposed, the N type source and drain regions 7 and 8 are formed by diffusion, and the polycrystal Si layer 9 and the Si₃N₄ film 10 are coated in contact with the regions 7 and 8. Next, the film 6 is removed to remain the gate electrode 40, and the film 10 is removed, and the deep P⁺ regions 72 and 82 in contact with the regions 7 and 8, and shallow N type regions 71 and 81 are formed by diffusion.

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