JPS57155778A - Manufacture of schottky barrier gate fet - Google Patents
Manufacture of schottky barrier gate fetInfo
- Publication number
- JPS57155778A JPS57155778A JP4149681A JP4149681A JPS57155778A JP S57155778 A JPS57155778 A JP S57155778A JP 4149681 A JP4149681 A JP 4149681A JP 4149681 A JP4149681 A JP 4149681A JP S57155778 A JPS57155778 A JP S57155778A
- Authority
- JP
- Japan
- Prior art keywords
- film
- opening
- gate
- insulating film
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 230000000873 masking effect Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To produce Schottky barrier gate FET of high frequency and high speed processing device (MES FET) by reducing parasitic resistance. CONSTITUTION:An n type GaAs film 2 is formed on a semi-insulation type substrate of GaAs 1 and insulating film 3 of SiO2 or the like and an aluminium film 4 are further deposited on the former film respectively. Next, a bigger opening are made on the aluminum film 4 by side etching technique using a masking material 6 such as photoresist, etc. having an opening at a position for the gate 5 and then an opening is also made on the insulating film 3 by dry etching. After the masking material 6 is stripped, a film of heat resisting metal 7 is deposited. Then, the aluminum film 4 is removed and the gate of heat resisting metal 8 is formed by lift-off technique, and, using this as a mask, a carrier layer 9 of high density is produced by etching the insulating film 3 and by silicon ion implantation. After this, the source 10 and drain 11 electrodes are formed, and a MES FET is completed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4149681A JPS57155778A (en) | 1981-03-20 | 1981-03-20 | Manufacture of schottky barrier gate fet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4149681A JPS57155778A (en) | 1981-03-20 | 1981-03-20 | Manufacture of schottky barrier gate fet |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57155778A true JPS57155778A (en) | 1982-09-25 |
| JPH0117271B2 JPH0117271B2 (en) | 1989-03-29 |
Family
ID=12609957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4149681A Granted JPS57155778A (en) | 1981-03-20 | 1981-03-20 | Manufacture of schottky barrier gate fet |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57155778A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5873164A (en) * | 1981-10-27 | 1983-05-02 | Sumitomo Electric Ind Ltd | Schottky gate field effect transistor and manufacture thereof |
-
1981
- 1981-03-20 JP JP4149681A patent/JPS57155778A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5873164A (en) * | 1981-10-27 | 1983-05-02 | Sumitomo Electric Ind Ltd | Schottky gate field effect transistor and manufacture thereof |
| JPH0359578B2 (en) * | 1981-10-27 | 1991-09-11 | Sumitomo Electric Industries |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0117271B2 (en) | 1989-03-29 |
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