JPS5498186A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5498186A JPS5498186A JP493478A JP493478A JPS5498186A JP S5498186 A JPS5498186 A JP S5498186A JP 493478 A JP493478 A JP 493478A JP 493478 A JP493478 A JP 493478A JP S5498186 A JPS5498186 A JP S5498186A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- amount
- reducing
- layer
- metalic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To improve the operating speed of semiconductor system by adjusting the amount of side-etching almost equal to the amount to the amount of lateral spreading of source drain connection and reducing the overlapping of joint between gate electrode and source drain, thus reducing the floating capacity between gate substrates.
CONSTITUTION: Allow gate insulation film 2 to grow on the surface of semiconductor substrate 1, form metalic layer 3 used as gate metalic layer on substrate 1 and, then, form mask 8 on the metalic layer which is used for forming metalic layer 3 as the gate metalic layer. Then, ion-inject the conductive form impurity located opposite to substrate 1 through insulation film 2 and side-etch the gate metal layer by using mask 8 as the side-etch mask, thus ultimately forming the shape of gate electrode while at the same time adjusting the amount of side etch almost equal to laterally spread amount of source drain connectinn and reducing the overlapping at the joint gate electrode and source chain, thus reducing the floating capacity between substrates 1 extensively increasing the operating speed of semiconductor device.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP493478A JPS5498186A (en) | 1978-01-19 | 1978-01-19 | Preparation of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP493478A JPS5498186A (en) | 1978-01-19 | 1978-01-19 | Preparation of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5498186A true JPS5498186A (en) | 1979-08-02 |
Family
ID=11597399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP493478A Pending JPS5498186A (en) | 1978-01-19 | 1978-01-19 | Preparation of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5498186A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56115568A (en) * | 1980-02-19 | 1981-09-10 | Toshiba Corp | Manufacture of semiconductor device |
| JPS5743466A (en) * | 1980-08-28 | 1982-03-11 | Toshiba Corp | Insulated gate type field effect transistor and manufacture thereof |
| KR100781453B1 (en) | 2006-08-23 | 2007-12-03 | 동부일렉트로닉스 주식회사 | Device and method for manufacturing mos transistor's gate |
-
1978
- 1978-01-19 JP JP493478A patent/JPS5498186A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56115568A (en) * | 1980-02-19 | 1981-09-10 | Toshiba Corp | Manufacture of semiconductor device |
| JPS5743466A (en) * | 1980-08-28 | 1982-03-11 | Toshiba Corp | Insulated gate type field effect transistor and manufacture thereof |
| KR100781453B1 (en) | 2006-08-23 | 2007-12-03 | 동부일렉트로닉스 주식회사 | Device and method for manufacturing mos transistor's gate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS57113289A (en) | Semiconductor device and its manufacture | |
| JPS5498186A (en) | Preparation of semiconductor device | |
| JPS5559759A (en) | Semiconductor device | |
| JPS5583267A (en) | Method of fabricating semiconductor device | |
| JPS53141585A (en) | Manufacture of insulating gate field effect type semiconductor device | |
| JPS54130883A (en) | Production of semiconductor device | |
| JPS52124860A (en) | Electrode formation method for semiconductor devices | |
| JPS53110479A (en) | Production of semiconductor device | |
| JPS5533037A (en) | Manufacture of semiconductor device | |
| JPS5440575A (en) | Semiconductor device | |
| JPS53135582A (en) | Semiconductor device and its manufacture | |
| JPS53144687A (en) | Production of semiconductor device | |
| JPS5530873A (en) | High withstand field-effect transistor of mis type | |
| JPS5423478A (en) | Semiconductor device of field effect type | |
| JPS54106174A (en) | Semiconductor device and its manufacture | |
| JPS5559775A (en) | Method of fabricating semiconductor device | |
| JPS53143163A (en) | Epitaxial growth method | |
| JPS5670669A (en) | Longitudinal semiconductor device | |
| JPS54115081A (en) | Manufacture for semiconcuctor integrated circuit device | |
| JPS5247685A (en) | Process for production of mos type semiconductor device | |
| JPS57202782A (en) | Formation of gate electrode | |
| JPS54977A (en) | Manufacture for semiconductor device | |
| JPS5376770A (en) | Production of insulated gate field effect transistor | |
| JPS51117878A (en) | Manufacturing method of semiconductor device | |
| JPS53145485A (en) | Production of semiconductor device having serrations on semiconductor surface |