FR2451103A1 - Procede de passivation d'un circuit integre, au moyen d'une couche de nitrure de silicium (si3n4) et d'une couche de verre au phosphosilicate (psg) - Google Patents
Procede de passivation d'un circuit integre, au moyen d'une couche de nitrure de silicium (si3n4) et d'une couche de verre au phosphosilicate (psg)Info
- Publication number
- FR2451103A1 FR2451103A1 FR8004843A FR8004843A FR2451103A1 FR 2451103 A1 FR2451103 A1 FR 2451103A1 FR 8004843 A FR8004843 A FR 8004843A FR 8004843 A FR8004843 A FR 8004843A FR 2451103 A1 FR2451103 A1 FR 2451103A1
- Authority
- FR
- France
- Prior art keywords
- layer
- passivating
- integrated circuit
- active regions
- si3n4
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000005360 phosphosilicate glass Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 title 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1710079A | 1979-03-05 | 1979-03-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2451103A1 true FR2451103A1 (fr) | 1980-10-03 |
Family
ID=21780714
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8004843A Withdrawn FR2451103A1 (fr) | 1979-03-05 | 1980-03-04 | Procede de passivation d'un circuit integre, au moyen d'une couche de nitrure de silicium (si3n4) et d'une couche de verre au phosphosilicate (psg) |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS55121669A (de) |
DE (1) | DE3007500A1 (de) |
FR (1) | FR2451103A1 (de) |
GB (1) | GB2044533B (de) |
IT (1) | IT1140645B (de) |
NL (1) | NL8001310A (de) |
YU (1) | YU61180A (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1174285A (en) * | 1980-04-28 | 1984-09-11 | Michelangelo Delfino | Laser induced flow of integrated circuit structure materials |
US4542037A (en) * | 1980-04-28 | 1985-09-17 | Fairchild Camera And Instrument Corporation | Laser induced flow of glass bonded materials |
JPS581878A (ja) * | 1981-06-26 | 1983-01-07 | Fujitsu Ltd | 磁気バブルメモリ素子の製造方法 |
DE3130666A1 (de) * | 1981-08-03 | 1983-02-17 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen integrieter mos-feldeffekttransistoren mit einer phosphorsilikatglasschicht als zwischenoxidschicht |
DE3131050A1 (de) * | 1981-08-05 | 1983-02-24 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von integrierten mos-feldeffekttransistoren unter verwendung einer aus phosphorsilikatglas bestehenden obewrflaechenschicht auf dem zwischenoxid zwischen polysiliziumebene und metall-leiterbahnebene |
DE3133516A1 (de) * | 1981-08-25 | 1983-03-17 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum verrunden des zwischenoxids zwischen polysiliziumebene und metall-leiterbahnebene beim herstellen von integrierten n-kanal-mos-feldeffekttransistoren |
JPS5898934A (ja) * | 1981-12-08 | 1983-06-13 | Matsushita Electronics Corp | 半導体装置の製造方法 |
US4686000A (en) * | 1985-04-02 | 1987-08-11 | Heath Barbara A | Self-aligned contact process |
JPH088246A (ja) * | 1994-06-21 | 1996-01-12 | Nippon Motorola Ltd | 半導体装置の金属配線形成方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3627598A (en) * | 1970-02-05 | 1971-12-14 | Fairchild Camera Instr Co | Nitride passivation of mesa transistors by phosphovapox lifting |
US3917495A (en) * | 1970-06-01 | 1975-11-04 | Gen Electric | Method of making improved planar devices including oxide-nitride composite layer |
US3943621A (en) * | 1974-03-25 | 1976-03-16 | General Electric Company | Semiconductor device and method of manufacture therefor |
US4005240A (en) * | 1975-03-10 | 1977-01-25 | Aeronutronic Ford Corporation | Germanium device passivation |
GB2023342A (en) * | 1978-06-19 | 1979-12-28 | Rca Corp | Passivating composite for a semiconductor device comprising a silicon nitride (si3 n4) layer and phosphosilicate glass (psg) layer 3 and 4 the method off manufacturing the same |
-
1980
- 1980-02-19 IT IT20023/80A patent/IT1140645B/it active
- 1980-02-28 DE DE19803007500 patent/DE3007500A1/de not_active Withdrawn
- 1980-02-29 GB GB8007004A patent/GB2044533B/en not_active Expired
- 1980-03-04 FR FR8004843A patent/FR2451103A1/fr not_active Withdrawn
- 1980-03-04 JP JP2787680A patent/JPS55121669A/ja active Pending
- 1980-03-04 NL NL8001310A patent/NL8001310A/nl not_active Application Discontinuation
- 1980-03-05 YU YU00611/80A patent/YU61180A/xx unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3627598A (en) * | 1970-02-05 | 1971-12-14 | Fairchild Camera Instr Co | Nitride passivation of mesa transistors by phosphovapox lifting |
US3917495A (en) * | 1970-06-01 | 1975-11-04 | Gen Electric | Method of making improved planar devices including oxide-nitride composite layer |
US3943621A (en) * | 1974-03-25 | 1976-03-16 | General Electric Company | Semiconductor device and method of manufacture therefor |
US4005240A (en) * | 1975-03-10 | 1977-01-25 | Aeronutronic Ford Corporation | Germanium device passivation |
GB2023342A (en) * | 1978-06-19 | 1979-12-28 | Rca Corp | Passivating composite for a semiconductor device comprising a silicon nitride (si3 n4) layer and phosphosilicate glass (psg) layer 3 and 4 the method off manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
IT1140645B (it) | 1986-10-01 |
GB2044533B (en) | 1983-12-14 |
YU61180A (en) | 1983-02-28 |
DE3007500A1 (de) | 1980-09-18 |
NL8001310A (nl) | 1980-09-09 |
JPS55121669A (en) | 1980-09-18 |
IT8020023A0 (it) | 1980-02-19 |
GB2044533A (en) | 1980-10-15 |
IT8020023A1 (it) | 1981-08-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |