NL8001310A - Werkwijze voor het passiveren van een orgaan met een geintegreerde keten. - Google Patents

Werkwijze voor het passiveren van een orgaan met een geintegreerde keten. Download PDF

Info

Publication number: NL8001310A
Authority: NL; Netherlands
Prior art keywords: layer; psg; glass layer; phosphorus; phosphorsilicate
Prior art date: 1979-03-05

Application number

NL8001310A

Other languages

English (en)

Dutch (nl)

Original Assignee

Rca Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1979-03-05

Filing date

1980-03-04

Publication date

1980-09-09

1980-03-04 Application filed by Rca Corp filed Critical Rca Corp

1980-09-09 Publication of NL8001310A publication Critical patent/NL8001310A/nl

Links

238000000034 method Methods 0.000 title claims description 17
210000000056 organ Anatomy 0.000 title claims description 6
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 24
229910052698 phosphorus Inorganic materials 0.000 claims description 22
239000011574 phosphorus Substances 0.000 claims description 22
239000011521 glass Substances 0.000 claims description 16
239000004065 semiconductor Substances 0.000 claims description 14
229910052751 metal Inorganic materials 0.000 claims description 10
239000002184 metal Substances 0.000 claims description 10
239000000463 material Substances 0.000 claims description 3
239000000428 dust Substances 0.000 claims description 2
239000005368 silicate glass Substances 0.000 claims description 2
238000010438 heat treatment Methods 0.000 claims 5
239000005360 phosphosilicate glass Substances 0.000 claims 1
239000010410 layer Substances 0.000 description 78
229910052581 Si3N4 Inorganic materials 0.000 description 21
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 21
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
229910052710 silicon Inorganic materials 0.000 description 7
239000010703 silicon Substances 0.000 description 7
239000000758 substrate Substances 0.000 description 7
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
238000004519 manufacturing process Methods 0.000 description 6
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
229910052782 aluminium Inorganic materials 0.000 description 5
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
239000012298 atmosphere Substances 0.000 description 5
238000005530 etching Methods 0.000 description 5
230000003647 oxidation Effects 0.000 description 5
238000007254 oxidation reaction Methods 0.000 description 5
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
230000015572 biosynthetic process Effects 0.000 description 4
238000010276 construction Methods 0.000 description 4
239000012212 insulator Substances 0.000 description 4
239000000203 mixture Substances 0.000 description 4
239000000377 silicon dioxide Substances 0.000 description 4
238000006243 chemical reaction Methods 0.000 description 3
238000000151 deposition Methods 0.000 description 3
230000007774 longterm Effects 0.000 description 3
229910052757 nitrogen Inorganic materials 0.000 description 3
230000001681 protective effect Effects 0.000 description 3
235000012239 silicon dioxide Nutrition 0.000 description 3
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 description 2
238000000637 aluminium metallisation Methods 0.000 description 2
229910000147 aluminium phosphate Inorganic materials 0.000 description 2
238000004140 cleaning Methods 0.000 description 2
239000002131 composite material Substances 0.000 description 2
238000005260 corrosion Methods 0.000 description 2
230000007797 corrosion Effects 0.000 description 2
238000009792 diffusion process Methods 0.000 description 2
239000007789 gas Substances 0.000 description 2
238000000465 moulding Methods 0.000 description 2
150000004767 nitrides Chemical class 0.000 description 2
XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
229910000077 silane Inorganic materials 0.000 description 2
230000004936 stimulating effect Effects 0.000 description 2
230000002195 synergetic effect Effects 0.000 description 2
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
230000002411 adverse Effects 0.000 description 1
229910021529 ammonia Inorganic materials 0.000 description 1
238000009835 boiling Methods 0.000 description 1
239000000872 buffer Substances 0.000 description 1
230000003139 buffering effect Effects 0.000 description 1
238000005229 chemical vapour deposition Methods 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
229910052737 gold Inorganic materials 0.000 description 1
239000010931 gold Substances 0.000 description 1
238000009499 grossing Methods 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
239000012535 impurity Substances 0.000 description 1
150000002736 metal compounds Chemical class 0.000 description 1
229910044991 metal oxide Inorganic materials 0.000 description 1
150000004706 metal oxides Chemical class 0.000 description 1
238000001465 metallisation Methods 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
239000012299 nitrogen atmosphere Substances 0.000 description 1
230000001590 oxidative effect Effects 0.000 description 1
238000002161 passivation Methods 0.000 description 1
RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
229910000073 phosphorus hydride Inorganic materials 0.000 description 1
229910001392 phosphorus oxide Inorganic materials 0.000 description 1
229910052697 platinum Inorganic materials 0.000 description 1
230000005855 radiation Effects 0.000 description 1
238000010405 reoxidation reaction Methods 0.000 description 1
150000003839 salts Chemical class 0.000 description 1
239000002356 single layer Substances 0.000 description 1
239000000243 solution Substances 0.000 description 1
239000010902 straw Substances 0.000 description 1
239000000725 suspension Substances 0.000 description 1
VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 1
229910052719 titanium Inorganic materials 0.000 description 1
239000010936 titanium Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76819—Smoothing of the dielectric
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Formation Of Insulating Films (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Electrodes Of Semiconductors (AREA)

NL8001310A 1979-03-05 1980-03-04 Werkwijze voor het passiveren van een orgaan met een geintegreerde keten. NL8001310A (nl)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US1710079A	1979-03-05	1979-03-05
US1710079		1979-03-05

Publications (1)

Publication Number	Publication Date
NL8001310A true NL8001310A (nl)	1980-09-09

Family

ID=21780714

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL8001310A NL8001310A (nl)	1979-03-05	1980-03-04	Werkwijze voor het passiveren van een orgaan met een geintegreerde keten.

Country Status (7)

Country	Link
JP (1)	JPS55121669A (de)
DE (1)	DE3007500A1 (de)
FR (1)	FR2451103A1 (de)
GB (1)	GB2044533B (de)
IT (1)	IT1140645B (de)
NL (1)	NL8001310A (de)
YU (1)	YU61180A (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CA1174285A (en) *	1980-04-28	1984-09-11	Michelangelo Delfino	Laser induced flow of integrated circuit structure materials
US4542037A (en) *	1980-04-28	1985-09-17	Fairchild Camera And Instrument Corporation	Laser induced flow of glass bonded materials
JPS581878A (ja) *	1981-06-26	1983-01-07	Fujitsu Ltd	磁気バブルメモリ素子の製造方法
DE3130666A1 (de) *	1981-08-03	1983-02-17	Siemens AG, 1000 Berlin und 8000 München	Verfahren zum herstellen integrieter mos-feldeffekttransistoren mit einer phosphorsilikatglasschicht als zwischenoxidschicht
DE3131050A1 (de) *	1981-08-05	1983-02-24	Siemens AG, 1000 Berlin und 8000 München	Verfahren zum herstellen von integrierten mos-feldeffekttransistoren unter verwendung einer aus phosphorsilikatglas bestehenden obewrflaechenschicht auf dem zwischenoxid zwischen polysiliziumebene und metall-leiterbahnebene
DE3133516A1 (de) *	1981-08-25	1983-03-17	Siemens AG, 1000 Berlin und 8000 München	Verfahren zum verrunden des zwischenoxids zwischen polysiliziumebene und metall-leiterbahnebene beim herstellen von integrierten n-kanal-mos-feldeffekttransistoren
JPS5898934A (ja) *	1981-12-08	1983-06-13	Matsushita Electronics Corp	半導体装置の製造方法
US4686000A (en) *	1985-04-02	1987-08-11	Heath Barbara A	Self-aligned contact process
JPH088246A (ja) *	1994-06-21	1996-01-12	Nippon Motorola Ltd	半導体装置の金属配線形成方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3627598A (en) *	1970-02-05	1971-12-14	Fairchild Camera Instr Co	Nitride passivation of mesa transistors by phosphovapox lifting
US3917495A (en) *	1970-06-01	1975-11-04	Gen Electric	Method of making improved planar devices including oxide-nitride composite layer
US3943621A (en) *	1974-03-25	1976-03-16	General Electric Company	Semiconductor device and method of manufacture therefor
US4005240A (en) *	1975-03-10	1977-01-25	Aeronutronic Ford Corporation	Germanium device passivation
US4273805A (en) *	1978-06-19	1981-06-16	Rca Corporation	Passivating composite for a semiconductor device comprising a silicon nitride (Si1 3N4) layer and phosphosilicate glass (PSG) layer

1980
- 1980-02-19 IT IT20023/80A patent/IT1140645B/it active
- 1980-02-28 DE DE19803007500 patent/DE3007500A1/de not_active Withdrawn
- 1980-02-29 GB GB8007004A patent/GB2044533B/en not_active Expired
- 1980-03-04 FR FR8004843A patent/FR2451103A1/fr not_active Withdrawn
- 1980-03-04 JP JP2787680A patent/JPS55121669A/ja active Pending
- 1980-03-04 NL NL8001310A patent/NL8001310A/nl not_active Application Discontinuation
- 1980-03-05 YU YU00611/80A patent/YU61180A/xx unknown

Also Published As

Publication number	Publication date
IT1140645B (it)	1986-10-01
GB2044533B (en)	1983-12-14
YU61180A (en)	1983-02-28
DE3007500A1 (de)	1980-09-18
FR2451103A1 (fr)	1980-10-03
JPS55121669A (en)	1980-09-18
IT8020023A0 (it)	1980-02-19
GB2044533A (en)	1980-10-15
IT8020023A1 (it)	1981-08-19

Legal Events

Date	Code	Title	Description
1985-01-01	A85	Still pending on 85-01-01
1985-11-01	BV	The patent application has lapsed

Publication	Publication Date	Title
US4784973A (en)	1988-11-15	Semiconductor contact silicide/nitride process with control for silicide thickness
US5903053A (en)	1999-05-11	Semiconductor device
JPS6242385B2 (de)	1987-09-08
CA1125439A (en)	1982-06-08	Passivating composite for a semiconductor device comprising a silicon nitride (si.sub.3n.sub.4) layer and phosphosilicate glass (psg) layer and the method of manufacturing the same
NL8001310A (nl)	1980-09-09	Werkwijze voor het passiveren van een orgaan met een geintegreerde keten.
JPH0669354A (ja)	1994-03-11	半導体装置の製造方法
US4977440A (en)	1990-12-11	Structure and process for contacting and interconnecting semiconductor devices within an integrated circuit
US4113533A (en)	1978-09-12	Method of making a mos device
US5395795A (en)	1995-03-07	Method for fabricating a semiconductor device
US6429117B1 (en)	2002-08-06	Method to create copper traps by modifying treatment on the dielectrics surface
JPH04234149A (ja)	1992-08-21	半導体装置の多層配線層間絶縁膜の形成方法
EP0032042B1 (de)	1985-08-28	Feldeffekttransistor mit isoliertem Gate
JPS58110078A (ja)	1983-06-30	半導体装置の製造方法
JPS60193362A (ja)	1985-10-01	半導体装置
JPS61274325A (ja)	1986-12-04	半導体装置の製造方法
JP3390890B2 (ja)	2003-03-31	半導体装置の製造方法
USRE32351E (en)	1987-02-17	Method of manufacturing a passivating composite comprising a silicon nitride (SI1 3N4) layer and a phosphosilicate glass (PSG) layer for a semiconductor device layer
JPS6011473B2 (ja)	1985-03-26	Ｍｉｓ型半導体装置
JPS62183142A (ja)	1987-08-11	半導体装置の製造方法
JPS6028247A (ja)	1985-02-13	半導体装置
JP2785482B2 (ja)	1998-08-13	半導体装置の製造方法
JPH01109727A (ja)	1989-04-26	半導体装置およびその製造方法
JPS62235752A (ja)	1987-10-15	半導体装置の製造方法
JPS59105338A (ja)	1984-06-18	半導体装置の製造方法
JPS61198626A (ja)	1986-09-03	半導体装置の製造方法