JPS6472532A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6472532A
JPS6472532A JP62228270A JP22827087A JPS6472532A JP S6472532 A JPS6472532 A JP S6472532A JP 62228270 A JP62228270 A JP 62228270A JP 22827087 A JP22827087 A JP 22827087A JP S6472532 A JPS6472532 A JP S6472532A
Authority
JP
Japan
Prior art keywords
film
passivation film
si3n4
contact
final passivation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62228270A
Other languages
Japanese (ja)
Inventor
Toshio Yanagi
Atsushi Sawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
New Japan Radio Co Ltd
Original Assignee
New Japan Radio Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by New Japan Radio Co Ltd filed Critical New Japan Radio Co Ltd
Priority to JP62228270A priority Critical patent/JPS6472532A/en
Publication of JPS6472532A publication Critical patent/JPS6472532A/en
Pending legal-status Critical Current

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  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain a final passivation film directly in contact with an Si3N4 film so that the passivation film is hardly separated, by providing the size of the final passivation film, which is directly formed on the Si3N4 film in a wafer process, so that the shape of the passivation film is in contact with the Si surface of a substrate and the size exceeds from a scribing line by a specified length. CONSTITUTION:An Si3N4 film 7 is provided at a layer, where a chip is directly in contact with a final passivation film 8 in a semiconductor device. When said semiconductor device is manufactured, the final passivation film 8, which is directly formed on the Si3N4 in a wafer process, exceeds from a scribing line 9 by at least 5mum or more. The film 8 is in contact with the surface of Si in a substrate. The size of the film 8 is formed in this way. Even if alignment is deviated slightly in a possible occasions, an exposing part, where the passivation film 8 is not overlapped on the Si3N4 film, is not yielded. The entire insulating film part is covered with the final passivation film 8 along all the part. Therefore, the final passivation film 8 is not separated, and moisture resistance is improved.
JP62228270A 1987-09-14 1987-09-14 Manufacture of semiconductor device Pending JPS6472532A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62228270A JPS6472532A (en) 1987-09-14 1987-09-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62228270A JPS6472532A (en) 1987-09-14 1987-09-14 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6472532A true JPS6472532A (en) 1989-03-17

Family

ID=16873841

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62228270A Pending JPS6472532A (en) 1987-09-14 1987-09-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6472532A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998024121A1 (en) * 1996-11-29 1998-06-04 Siemens Aktiengesellschaft Semiconductor chip and wafer with a protective layer, especially made of ceramic

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998024121A1 (en) * 1996-11-29 1998-06-04 Siemens Aktiengesellschaft Semiconductor chip and wafer with a protective layer, especially made of ceramic

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