JPS6472532A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6472532A JPS6472532A JP62228270A JP22827087A JPS6472532A JP S6472532 A JPS6472532 A JP S6472532A JP 62228270 A JP62228270 A JP 62228270A JP 22827087 A JP22827087 A JP 22827087A JP S6472532 A JPS6472532 A JP S6472532A
- Authority
- JP
- Japan
- Prior art keywords
- film
- passivation film
- si3n4
- contact
- final passivation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To obtain a final passivation film directly in contact with an Si3N4 film so that the passivation film is hardly separated, by providing the size of the final passivation film, which is directly formed on the Si3N4 film in a wafer process, so that the shape of the passivation film is in contact with the Si surface of a substrate and the size exceeds from a scribing line by a specified length. CONSTITUTION:An Si3N4 film 7 is provided at a layer, where a chip is directly in contact with a final passivation film 8 in a semiconductor device. When said semiconductor device is manufactured, the final passivation film 8, which is directly formed on the Si3N4 in a wafer process, exceeds from a scribing line 9 by at least 5mum or more. The film 8 is in contact with the surface of Si in a substrate. The size of the film 8 is formed in this way. Even if alignment is deviated slightly in a possible occasions, an exposing part, where the passivation film 8 is not overlapped on the Si3N4 film, is not yielded. The entire insulating film part is covered with the final passivation film 8 along all the part. Therefore, the final passivation film 8 is not separated, and moisture resistance is improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62228270A JPS6472532A (en) | 1987-09-14 | 1987-09-14 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62228270A JPS6472532A (en) | 1987-09-14 | 1987-09-14 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6472532A true JPS6472532A (en) | 1989-03-17 |
Family
ID=16873841
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62228270A Pending JPS6472532A (en) | 1987-09-14 | 1987-09-14 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6472532A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998024121A1 (en) * | 1996-11-29 | 1998-06-04 | Siemens Aktiengesellschaft | Semiconductor chip and wafer with a protective layer, especially made of ceramic |
-
1987
- 1987-09-14 JP JP62228270A patent/JPS6472532A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998024121A1 (en) * | 1996-11-29 | 1998-06-04 | Siemens Aktiengesellschaft | Semiconductor chip and wafer with a protective layer, especially made of ceramic |
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