FR2406893B1 - - Google Patents
Info
- Publication number
- FR2406893B1 FR2406893B1 FR7829713A FR7829713A FR2406893B1 FR 2406893 B1 FR2406893 B1 FR 2406893B1 FR 7829713 A FR7829713 A FR 7829713A FR 7829713 A FR7829713 A FR 7829713A FR 2406893 B1 FR2406893 B1 FR 2406893B1
- Authority
- FR
- France
- Prior art keywords
- pressure bonding
- semiconductor structure
- thermal pressure
- bump terminal
- bonded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05166—Titanium [Ti] as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05169—Platinum [Pt] as principal constituent
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05644—Gold [Au] as principal constituent
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L2224/13001—Core members of the bump connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H01L2924/0001—Technical content checked by a classifier
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- H01L2924/01005—Boron [B]
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- H01L2924/01006—Carbon [C]
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- H01L2924/01022—Titanium [Ti]
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- H01L2924/01033—Arsenic [As]
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- H01L2924/01039—Yttrium [Y]
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- H01L2924/01074—Tungsten [W]
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- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Measuring Fluid Pressure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12631877A JPS5459080A (en) | 1977-10-19 | 1977-10-19 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2406893A1 FR2406893A1 (fr) | 1979-05-18 |
FR2406893B1 true FR2406893B1 (fr) | 1983-10-07 |
Family
ID=14932210
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7829713A Granted FR2406893A1 (fr) | 1977-10-19 | 1978-10-18 | Dispositif a semi-conducteur a electrodes de raccordement en saillie |
Country Status (4)
Country | Link |
---|---|
US (1) | US4244002A (fr) |
JP (1) | JPS5459080A (fr) |
DE (1) | DE2845612C2 (fr) |
FR (1) | FR2406893A1 (fr) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7659621B2 (en) | 2003-10-14 | 2010-02-09 | Unitive International Limited | Solder structures for out of plane connections |
US7674701B2 (en) | 2006-02-08 | 2010-03-09 | Amkor Technology, Inc. | Methods of forming metal layers using multi-layer lift-off patterns |
US7839000B2 (en) | 2002-06-25 | 2010-11-23 | Unitive International Limited | Solder structures including barrier layers with nickel and/or copper |
US7879715B2 (en) | 2002-06-25 | 2011-02-01 | Unitive International Limited | Methods of forming electronic structures including conductive shunt layers and related structures |
US7932615B2 (en) | 2006-02-08 | 2011-04-26 | Amkor Technology, Inc. | Electronic devices including solder bumps on compliant dielectric layers |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5925387B2 (ja) * | 1980-06-10 | 1984-06-16 | 株式会社東芝 | 半導体装置 |
JPS57170554A (en) * | 1981-04-15 | 1982-10-20 | Hitachi Ltd | Semiconductor device |
JPS593954A (ja) * | 1982-06-29 | 1984-01-10 | Mitsubishi Electric Corp | 半導体装置 |
IT1156085B (it) * | 1982-10-25 | 1987-01-28 | Cselt Centro Studi Lab Telecom | Dispositivo optoelettronico e procedimento per la sua fabbricazione |
DE3727488C2 (de) * | 1987-08-18 | 1994-05-26 | Telefunken Microelectron | Optoelektronisches Bauelement |
US4922322A (en) * | 1989-02-09 | 1990-05-01 | National Semiconductor Corporation | Bump structure for reflow bonding of IC devices |
US5208186A (en) * | 1989-02-09 | 1993-05-04 | National Semiconductor Corporation | Process for reflow bonding of bumps in IC devices |
JPH0437067A (ja) * | 1990-05-31 | 1992-02-07 | Canon Inc | 半導体素子用電極及び該電極を有する半導体装置及びその製造方法 |
US6388203B1 (en) | 1995-04-04 | 2002-05-14 | Unitive International Limited | Controlled-shaped solder reservoirs for increasing the volume of solder bumps, and structures formed thereby |
CN1179412C (zh) * | 1995-04-05 | 2004-12-08 | 统一国际有限公司 | 具有伸长部分和展宽部分的焊料结构及其形成方法 |
KR0145128B1 (ko) * | 1995-04-24 | 1998-08-17 | 김광호 | 열방열 핀을 구비한 내부 리드 본딩 장치 및 이를 이용한 내부 리드 본딩 방법 |
US5617991A (en) * | 1995-12-01 | 1997-04-08 | Advanced Micro Devices, Inc. | Method for electrically conductive metal-to-metal bonding |
US6184581B1 (en) * | 1997-11-24 | 2001-02-06 | Delco Electronics Corporation | Solder bump input/output pad for a surface mount circuit device |
DE60108413T2 (de) * | 2000-11-10 | 2005-06-02 | Unitive Electronics, Inc. | Verfahren zum positionieren von komponenten mit hilfe flüssiger antriebsmittel und strukturen hierfür |
US6863209B2 (en) | 2000-12-15 | 2005-03-08 | Unitivie International Limited | Low temperature methods of bonding components |
US7531898B2 (en) * | 2002-06-25 | 2009-05-12 | Unitive International Limited | Non-Circular via holes for bumping pads and related structures |
TWI225899B (en) * | 2003-02-18 | 2005-01-01 | Unitive Semiconductor Taiwan C | Etching solution and method for manufacturing conductive bump using the etching solution to selectively remove barrier layer |
TW200603698A (en) * | 2004-04-13 | 2006-01-16 | Unitive International Ltd | Methods of forming solder bumps on exposed metal pads and related structures |
US20060205170A1 (en) * | 2005-03-09 | 2006-09-14 | Rinne Glenn A | Methods of forming self-healing metal-insulator-metal (MIM) structures and related devices |
US8569886B2 (en) | 2011-11-22 | 2013-10-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus of under bump metallization in packaging semiconductor devices |
DE102014110473A1 (de) * | 2014-07-24 | 2016-01-28 | Osram Opto Semiconductors Gmbh | Träger für ein elektrisches Bauelement |
CN109720903B (zh) | 2017-10-31 | 2020-09-04 | 精工爱普生株式会社 | 介质传送装置及记录装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL87258C (fr) * | 1969-01-15 | |||
DE2409312C3 (de) * | 1974-02-27 | 1981-01-08 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiteranordnung mit einer auf der Halbleiteroberfläche angeordneten Metallschicht und Verfahren zu ihrer Herstellung |
JPS51147253A (en) * | 1975-06-13 | 1976-12-17 | Nec Corp | Structure of electrode terminal |
JPS5851425B2 (ja) * | 1975-08-22 | 1983-11-16 | 株式会社日立製作所 | ハンドウタイソウチ |
-
1977
- 1977-10-19 JP JP12631877A patent/JPS5459080A/ja active Granted
-
1978
- 1978-10-18 FR FR7829713A patent/FR2406893A1/fr active Granted
- 1978-10-18 US US05/952,543 patent/US4244002A/en not_active Expired - Lifetime
- 1978-10-19 DE DE2845612A patent/DE2845612C2/de not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7839000B2 (en) | 2002-06-25 | 2010-11-23 | Unitive International Limited | Solder structures including barrier layers with nickel and/or copper |
US7879715B2 (en) | 2002-06-25 | 2011-02-01 | Unitive International Limited | Methods of forming electronic structures including conductive shunt layers and related structures |
US8294269B2 (en) | 2002-06-25 | 2012-10-23 | Unitive International | Electronic structures including conductive layers comprising copper and having a thickness of at least 0.5 micrometers |
US7659621B2 (en) | 2003-10-14 | 2010-02-09 | Unitive International Limited | Solder structures for out of plane connections |
US7674701B2 (en) | 2006-02-08 | 2010-03-09 | Amkor Technology, Inc. | Methods of forming metal layers using multi-layer lift-off patterns |
US7932615B2 (en) | 2006-02-08 | 2011-04-26 | Amkor Technology, Inc. | Electronic devices including solder bumps on compliant dielectric layers |
Also Published As
Publication number | Publication date |
---|---|
FR2406893A1 (fr) | 1979-05-18 |
DE2845612A1 (de) | 1979-04-26 |
JPS6138612B2 (fr) | 1986-08-30 |
JPS5459080A (en) | 1979-05-12 |
DE2845612C2 (de) | 1987-01-22 |
US4244002A (en) | 1981-01-06 |
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