FR2342557A1 - Dispositif semiconducteur a circuit de protection - Google Patents

Dispositif semiconducteur a circuit de protection

Info

Publication number
FR2342557A1
FR2342557A1 FR7705033A FR7705033A FR2342557A1 FR 2342557 A1 FR2342557 A1 FR 2342557A1 FR 7705033 A FR7705033 A FR 7705033A FR 7705033 A FR7705033 A FR 7705033A FR 2342557 A1 FR2342557 A1 FR 2342557A1
Authority
FR
France
Prior art keywords
semiconductor device
protection circuit
protection
circuit
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7705033A
Other languages
English (en)
Other versions
FR2342557B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2342557A1 publication Critical patent/FR2342557A1/fr
Application granted granted Critical
Publication of FR2342557B1 publication Critical patent/FR2342557B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
FR7705033A 1976-02-24 1977-02-22 Dispositif semiconducteur a circuit de protection Granted FR2342557A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7601843,A NL176322C (nl) 1976-02-24 1976-02-24 Halfgeleiderinrichting met beveiligingsschakeling.

Publications (2)

Publication Number Publication Date
FR2342557A1 true FR2342557A1 (fr) 1977-09-23
FR2342557B1 FR2342557B1 (fr) 1983-07-08

Family

ID=19825672

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7705033A Granted FR2342557A1 (fr) 1976-02-24 1977-02-22 Dispositif semiconducteur a circuit de protection

Country Status (11)

Country Link
US (1) US4131908A (fr)
JP (2) JPS52102689A (fr)
AU (1) AU506552B2 (fr)
CA (1) CA1078072A (fr)
CH (1) CH612794A5 (fr)
DE (1) DE2707744A1 (fr)
FR (1) FR2342557A1 (fr)
GB (1) GB1571343A (fr)
IT (1) IT1074324B (fr)
NL (1) NL176322C (fr)
SE (1) SE411815B (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0042581A2 (fr) * 1980-06-17 1981-12-30 Nec Corporation Circuit intégré
FR2485824A1 (fr) * 1980-06-26 1981-12-31 Rca Corp Circuit de protection a transistor
FR2494501A1 (fr) * 1980-11-19 1982-05-21 Ates Componenti Elettron Protection d'entree pour circuit integre de type mos a basse tension d'alimentation et a haute densite d'integration
EP0057024A1 (fr) * 1981-01-26 1982-08-04 Koninklijke Philips Electronics N.V. Dispositif semiconducteur comportant un dispositif de sécurité
FR2503456A1 (fr) * 1981-03-31 1982-10-08 Rca Corp Dispositif de protection pour circuits integres
EP0103306A2 (fr) * 1982-09-14 1984-03-21 Kabushiki Kaisha Toshiba Dispositif semi-conducteur de protection
EP0144208A1 (fr) * 1983-11-30 1985-06-12 Fujitsu Limited Circuit de protection pour un dispositif à semi-conducteur
EP0349890A2 (fr) * 1988-07-06 1990-01-10 National Semiconductor Corporation Structure d'entrée ESD à faible résistance

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4264857A (en) * 1978-06-30 1981-04-28 International Business Machines Corporation Constant voltage threshold device
US4276555A (en) * 1978-07-13 1981-06-30 International Business Machines Corporation Controlled avalanche voltage transistor and magnetic sensor
JPS5580350A (en) * 1978-12-13 1980-06-17 Fujitsu Ltd Semiconductor integrated circuit
JPS55102268A (en) * 1979-01-31 1980-08-05 Toshiba Corp Protecting circuit for semiconductor device
US4264941A (en) * 1979-02-14 1981-04-28 National Semiconductor Corporation Protective circuit for insulated gate field effect transistor integrated circuits
US4235011A (en) * 1979-03-28 1980-11-25 Honeywell Inc. Semiconductor apparatus
JPS5679463A (en) * 1979-12-03 1981-06-30 Matsushita Electronics Corp Semiconductor integrated circuit
JPS5696851A (en) * 1979-12-27 1981-08-05 Fujitsu Ltd Static breakdown preventive element
JPS5737876A (en) * 1980-08-20 1982-03-02 Hitachi Ltd Semiconductor integrated circuit apparatus
JPS5756960A (en) * 1980-09-22 1982-04-05 Hitachi Ltd Semiconductor integrated circuit device
JPS5778178A (en) * 1980-11-04 1982-05-15 Toshiba Corp Input protective circuit
JPS5780774A (en) * 1980-11-07 1982-05-20 Hitachi Ltd Semiconductor integrated circuit device
US4602267A (en) * 1981-02-17 1986-07-22 Fujitsu Limited Protection element for semiconductor device
JPS58119670A (ja) * 1982-01-11 1983-07-16 Nissan Motor Co Ltd 半導体装置
JPS58182441U (ja) * 1982-05-28 1983-12-05 三洋電機株式会社 半導体集積回路
JPS5992557A (ja) * 1982-11-18 1984-05-28 Nec Corp 入力保護回路付半導体集積回路
JPS59181679A (ja) * 1983-03-31 1984-10-16 Nippon Denso Co Ltd 半導体装置
JPS60767A (ja) * 1983-06-17 1985-01-05 Hitachi Ltd 半導体装置
JPS6068721A (ja) * 1983-09-22 1985-04-19 Fujitsu Ltd Ｅｃｌ回路
US5276346A (en) * 1983-12-26 1994-01-04 Hitachi, Ltd. Semiconductor integrated circuit device having protective/output elements and internal circuits
JPH0646662B2 (ja) * 1983-12-26 1994-06-15 株式会社日立製作所 半導体装置
US5610089A (en) * 1983-12-26 1997-03-11 Hitachi, Ltd. Method of fabrication of semiconductor integrated circuit device
US4757363A (en) * 1984-09-14 1988-07-12 Harris Corporation ESD protection network for IGFET circuits with SCR prevention guard rings
SE455552B (sv) * 1985-02-26 1988-07-18 Asea Ab Halvledaranordning innefattande en overspenningsskyddskrets
JPS6252966A (ja) * 1985-09-02 1987-03-07 Toshiba Corp 半導体装置の製造方法
JPH0666402B2 (ja) * 1985-12-12 1994-08-24 三菱電機株式会社 半導体集積回路装置の入力保護回路
JPH0693495B2 (ja) * 1985-12-13 1994-11-16 ロ−ム株式会社 半導体装置の保護回路
US4760433A (en) * 1986-01-31 1988-07-26 Harris Corporation ESD protection transistors
DE3618166A1 (de) * 1986-05-30 1987-12-03 Telefunken Electronic Gmbh Lateraltransistor
US4987465A (en) * 1987-01-29 1991-01-22 Advanced Micro Devices, Inc. Electro-static discharge protection device for CMOS integrated circuit inputs
US5005066A (en) * 1987-06-02 1991-04-02 Texas Instruments Incorporated Self-aligned NPN bipolar transistor built in a double polysilicon CMOS technology
US4784966A (en) * 1987-06-02 1988-11-15 Texas Instruments Incorporated Self-aligned NPN bipolar transistor built in a double polysilicon CMOS technology
JPH0719879B2 (ja) * 1988-06-24 1995-03-06 日本電気株式会社 半導体集積回路装置
ES2055795T3 (es) * 1988-11-22 1994-09-01 At & T Corp Separador de salida de circuito integrado que tiene proteccion de esd mejorada.
JPH061802B2 (ja) * 1989-03-14 1994-01-05 株式会社東芝 半導体装置
US5345103A (en) * 1989-07-18 1994-09-06 Seiko Instruments Inc. Gate controlled avalanche bipolar transistor
JPH0821840B2 (ja) * 1989-12-07 1996-03-04 富士電機株式会社 パワー半導体装置のスナバ回路
US5212618A (en) * 1990-05-03 1993-05-18 Linear Technology Corporation Electrostatic discharge clamp using vertical NPN transistor
EP0517391A1 (fr) * 1991-06-05 1992-12-09 STMicroelectronics, Inc. Circuit de protection ESD
JP3019760B2 (ja) * 1995-11-15 2000-03-13 日本電気株式会社 半導体集積回路装置
US6784747B1 (en) 2003-03-20 2004-08-31 Analog Devices, Inc. Amplifier circuit
US6816015B2 (en) 2003-03-27 2004-11-09 Analog Devices, Inc. Amplifier circuit having a plurality of first and second base resistors
FR2918504B1 (fr) * 2007-07-06 2009-11-27 St Microelectronics Sa Resistance integree diffusee
FR3119493A1 (fr) * 2021-01-29 2022-08-05 Stmicroelectronics (Rousset) Sas Dispositif de protection contre les décharges électrostatiques

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573571A (en) * 1967-10-13 1971-04-06 Gen Electric Surface-diffused transistor with isolated field plate
GB1246913A (en) * 1968-09-09 1971-09-22 Nat Semiconductor Corp Improvements in or relating to the manufacture of semiconductor devices and devices produced thereby
FR2162365A1 (fr) * 1971-12-09 1973-07-20 Ibm
US3829709A (en) * 1973-08-31 1974-08-13 Micro Components Corp Supply reversal protecton circuit

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3764864A (en) * 1966-03-29 1973-10-09 Matsushita Electronics Corp Insulated-gate field-effect transistor with punch-through effect element
US3918080A (en) * 1968-06-21 1975-11-04 Philips Corp Multiemitter transistor with continuous ballast resistor
DE2015815B2 (de) * 1969-04-21 1976-06-24 Rca Corp., New York, N.Y. (V.St.A.) Schutzschaltung fuer einen integrierten schaltkreis
US3739238A (en) * 1969-09-24 1973-06-12 Tokyo Shibaura Electric Co Semiconductor device with a field effect transistor
US3636385A (en) * 1970-02-13 1972-01-18 Ncr Co Protection circuit
US3628070A (en) * 1970-04-22 1971-12-14 Rca Corp Voltage reference and voltage level sensing circuit
US3673428A (en) * 1970-09-18 1972-06-27 Rca Corp Input transient protection for complementary insulated gate field effect transistor integrated circuit device
JPS4818055U (fr) * 1971-07-09 1973-03-01
US3821780A (en) * 1972-10-24 1974-06-28 Gen Motors Corp Double mesa transistor with integral bleeder resistors
GB1405503A (en) * 1972-11-16 1975-09-10 Texas Instruments Inc Integrated circuits
US3967295A (en) * 1975-04-03 1976-06-29 Rca Corporation Input transient protection for integrated circuit element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573571A (en) * 1967-10-13 1971-04-06 Gen Electric Surface-diffused transistor with isolated field plate
GB1246913A (en) * 1968-09-09 1971-09-22 Nat Semiconductor Corp Improvements in or relating to the manufacture of semiconductor devices and devices produced thereby
FR2162365A1 (fr) * 1971-12-09 1973-07-20 Ibm
US3829709A (en) * 1973-08-31 1974-08-13 Micro Components Corp Supply reversal protecton circuit

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/74 *

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0042581A2 (fr) * 1980-06-17 1981-12-30 Nec Corporation Circuit intégré
EP0042581A3 (en) * 1980-06-17 1983-09-28 Nec Corporation Integrated circuit
FR2485824A1 (fr) * 1980-06-26 1981-12-31 Rca Corp Circuit de protection a transistor
FR2494501A1 (fr) * 1980-11-19 1982-05-21 Ates Componenti Elettron Protection d'entree pour circuit integre de type mos a basse tension d'alimentation et a haute densite d'integration
EP0057024A1 (fr) * 1981-01-26 1982-08-04 Koninklijke Philips Electronics N.V. Dispositif semiconducteur comportant un dispositif de sécurité
FR2503456A1 (fr) * 1981-03-31 1982-10-08 Rca Corp Dispositif de protection pour circuits integres
EP0103306A2 (fr) * 1982-09-14 1984-03-21 Kabushiki Kaisha Toshiba Dispositif semi-conducteur de protection
EP0103306A3 (en) * 1982-09-14 1985-08-28 Kabushiki Kaisha Toshiba Semiconductor protective device
EP0144208A1 (fr) * 1983-11-30 1985-06-12 Fujitsu Limited Circuit de protection pour un dispositif à semi-conducteur
EP0349890A2 (fr) * 1988-07-06 1990-01-10 National Semiconductor Corporation Structure d'entrée ESD à faible résistance
EP0349890A3 (en) * 1988-07-06 1990-10-24 National Semiconductor Corporation Esd low resistance input structure

Also Published As

Publication number Publication date
CA1078072A (fr) 1980-05-20
GB1571343A (en) 1980-07-16
NL176322C (nl) 1985-03-18
DE2707744C2 (fr) 1990-03-01
NL7601843A (nl) 1977-08-26
JPS5649159U (fr) 1981-05-01
AU506552B2 (en) 1980-01-10
DE2707744A1 (de) 1977-09-01
JPS52102689A (en) 1977-08-29
IT1074324B (it) 1985-04-20
SE7701884L (sv) 1977-08-25
CH612794A5 (fr) 1979-08-15
SE411815B (sv) 1980-02-04
FR2342557B1 (fr) 1983-07-08
US4131908A (en) 1978-12-26
NL176322B (nl) 1984-10-16
AU2250577A (en) 1978-08-31

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Legal Events

Date Code Title Description
ST Notification of lapse