SE7701316L - Halvledaranordning - Google Patents
HalvledaranordningInfo
- Publication number
- SE7701316L SE7701316L SE7701316A SE7701316A SE7701316L SE 7701316 L SE7701316 L SE 7701316L SE 7701316 A SE7701316 A SE 7701316A SE 7701316 A SE7701316 A SE 7701316A SE 7701316 L SE7701316 L SE 7701316L
- Authority
- SE
- Sweden
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/067—Lateral bipolar transistor in combination with diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/656,295 US4057894A (en) | 1976-02-09 | 1976-02-09 | Controllably valued resistor |
Publications (1)
Publication Number | Publication Date |
---|---|
SE7701316L true SE7701316L (sv) | 1977-08-10 |
Family
ID=24632452
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7701316A SE7701316L (sv) | 1976-02-09 | 1977-02-07 | Halvledaranordning |
Country Status (7)
Country | Link |
---|---|
US (2) | US4057894A (sv) |
JP (1) | JPS5297689A (sv) |
DE (1) | DE2704647A1 (sv) |
FR (1) | FR2340623A1 (sv) |
GB (1) | GB1564849A (sv) |
IN (1) | IN146793B (sv) |
SE (1) | SE7701316L (sv) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1094517B (it) * | 1978-04-28 | 1985-08-02 | Componenti Elettronici Sgs Ate | Procedimento per la fabbricazione di un elemento resistivo filiforme per circuito integrato |
FR2449333A1 (fr) * | 1979-02-14 | 1980-09-12 | Radiotechnique Compelec | Perfectionnement aux dispositifs semi-conducteurs de type darlington |
GB2050050B (en) * | 1979-05-10 | 1983-08-03 | Philips Electronic Associated | Basewidth variation compensation in integrated circuit transistors |
US4333171A (en) * | 1979-09-04 | 1982-06-01 | Citizen Watch Co., Ltd. | Electronic timepiece with diffusion resistor for compensating threshold variations |
JPS5685848A (en) * | 1979-12-15 | 1981-07-13 | Toshiba Corp | Manufacture of bipolar integrated circuit |
US4387310A (en) * | 1980-08-15 | 1983-06-07 | Communications Satellite Corporation | Temperature stabilized semiconductor delay element |
US4339707A (en) * | 1980-12-24 | 1982-07-13 | Honeywell Inc. | Band gap voltage regulator |
US4688073A (en) * | 1981-03-30 | 1987-08-18 | Goth George R | Lateral device structures using self-aligned fabrication techniques |
US4458408A (en) * | 1981-07-31 | 1984-07-10 | Motorola, Inc. | Method for making a light-activated line-operable zero-crossing switch |
US4704786A (en) * | 1982-08-04 | 1987-11-10 | Westinghouse Electric Corp. | Method of forming a lateral bipolar transistor in a groove |
JPS6097659A (ja) * | 1983-11-01 | 1985-05-31 | Matsushita Electronics Corp | 半導体集積回路 |
US4589002A (en) * | 1984-07-18 | 1986-05-13 | Rca Corporation | Diode structure |
JPH0620110B2 (ja) * | 1985-10-07 | 1994-03-16 | 日本電気株式会社 | 半導体装置 |
US4785339A (en) * | 1986-10-03 | 1988-11-15 | Ge Solid State Patents, Inc. | Integrated lateral PNP transistor and current limiting resistor |
US4812419A (en) * | 1987-04-30 | 1989-03-14 | Hewlett-Packard Company | Via connection with thin resistivity layer |
US5304502A (en) * | 1988-11-08 | 1994-04-19 | Yamaha Corporation | Process of fabricating semiconductor integrated circuit having conductive strips used as resistor and gate electrode of component transistor |
US5134088A (en) * | 1990-04-27 | 1992-07-28 | Digital Equipment Corporation | Precision resistor in self-aligned silicided mos process |
DE19507802C1 (de) * | 1995-03-06 | 1996-05-30 | Siemens Ag | Verfahren zum Herstellen eines integrierten Widerstandes |
DE10338689B4 (de) * | 2003-08-22 | 2007-03-29 | Infineon Technologies Ag | Widerstandsbauelement und Verfahren zu dessen Abgleich |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3465213A (en) * | 1966-06-20 | 1969-09-02 | Frances B Hugle | Self-compensating structure for limiting base drive current in transistors |
JPS509635B1 (sv) * | 1970-09-07 | 1975-04-14 | ||
US3673428A (en) * | 1970-09-18 | 1972-06-27 | Rca Corp | Input transient protection for complementary insulated gate field effect transistor integrated circuit device |
US3879236A (en) * | 1971-03-26 | 1975-04-22 | Ibm | Method of making a semiconductor resistor |
IT946150B (it) * | 1971-12-15 | 1973-05-21 | Ates Componenti Elettron | Perfezionamento al processo plana re epistssiale per la produzione di circuiti integrati lineari di potenza |
JPS515277B2 (sv) * | 1971-12-22 | 1976-02-18 | ||
CA997481A (en) * | 1972-12-29 | 1976-09-21 | International Business Machines Corporation | Dc testing of integrated circuits and a novel integrated circuit structure to facilitate such testing |
NL7307527A (sv) * | 1973-05-30 | 1974-12-03 | ||
US4011580A (en) * | 1973-05-30 | 1977-03-08 | U.S. Philips Corporation | Integrated circuit |
US3829709A (en) * | 1973-08-31 | 1974-08-13 | Micro Components Corp | Supply reversal protecton circuit |
DE2356301C3 (de) * | 1973-11-10 | 1982-03-11 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithisch integrierte, logische Schaltung |
-
1976
- 1976-02-09 US US05/656,295 patent/US4057894A/en not_active Expired - Lifetime
-
1977
- 1977-01-20 IN IN81/CAL/77A patent/IN146793B/en unknown
- 1977-01-26 GB GB3116/77A patent/GB1564849A/en not_active Expired
- 1977-02-04 DE DE19772704647 patent/DE2704647A1/de not_active Withdrawn
- 1977-02-07 SE SE7701316A patent/SE7701316L/sv unknown
- 1977-02-08 FR FR7703476A patent/FR2340623A1/fr not_active Withdrawn
- 1977-02-08 JP JP1350077A patent/JPS5297689A/ja active Pending
- 1977-08-25 US US05/827,569 patent/US4100565A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4100565A (en) | 1978-07-11 |
DE2704647A1 (de) | 1977-08-11 |
US4057894A (en) | 1977-11-15 |
GB1564849A (en) | 1980-04-16 |
IN146793B (sv) | 1979-09-15 |
JPS5297689A (en) | 1977-08-16 |
FR2340623A1 (fr) | 1977-09-02 |
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