FR2336801A1 - Circuit integre - Google Patents
Circuit integreInfo
- Publication number
- FR2336801A1 FR2336801A1 FR7639089A FR7639089A FR2336801A1 FR 2336801 A1 FR2336801 A1 FR 2336801A1 FR 7639089 A FR7639089 A FR 7639089A FR 7639089 A FR7639089 A FR 7639089A FR 2336801 A1 FR2336801 A1 FR 2336801A1
- Authority
- FR
- France
- Prior art keywords
- integrated circuit
- integrated
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0733—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50156621A JPS5279787A (en) | 1975-12-26 | 1975-12-26 | Integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2336801A1 true FR2336801A1 (fr) | 1977-07-22 |
FR2336801B1 FR2336801B1 (fr) | 1981-07-31 |
Family
ID=15631706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7639089A Granted FR2336801A1 (fr) | 1975-12-26 | 1976-12-24 | Circuit integre |
Country Status (5)
Country | Link |
---|---|
US (1) | US4163245A (fr) |
JP (1) | JPS5279787A (fr) |
DE (1) | DE2658666A1 (fr) |
FR (1) | FR2336801A1 (fr) |
GB (1) | GB1566580A (fr) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2399125A1 (fr) * | 1977-07-28 | 1979-02-23 | Fujitsu Ltd | Memoire a semi-conducteurs en circuit integre |
EP0018764A1 (fr) * | 1979-05-02 | 1980-11-12 | Fujitsu Limited | Dispositif semiconducteur dans lequel un "soft error" causé par des particules alpha est évité |
EP0143157A1 (fr) * | 1983-10-27 | 1985-06-05 | International Business Machines Corporation | Circuit de pompage de charge pour un générateur de tension de substrat |
EP0171597A1 (fr) * | 1984-08-13 | 1986-02-19 | International Business Machines Corporation | Structure à pompage de charges |
EP0224213A2 (fr) * | 1985-11-22 | 1987-06-03 | Nec Corporation | Dispositif de mémoire semi-conducteur |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6041463B2 (ja) * | 1976-11-19 | 1985-09-17 | 株式会社日立製作所 | ダイナミツク記憶装置 |
JPS55146961A (en) * | 1979-05-02 | 1980-11-15 | Hitachi Ltd | Semiconductor memory device |
JPS60777B2 (ja) * | 1979-05-25 | 1985-01-10 | 株式会社東芝 | Mos半導体集積回路 |
JPS55156358A (en) * | 1979-05-25 | 1980-12-05 | Hitachi Ltd | Semiconductor memory device |
US4539490A (en) * | 1979-12-08 | 1985-09-03 | Tokyo Shibaura Denki Kabushiki Kaisha | Charge pump substrate bias with antiparasitic guard ring |
US4399520A (en) * | 1980-02-22 | 1983-08-16 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor integrated circuit device |
US4433257A (en) * | 1980-03-03 | 1984-02-21 | Tokyo Shibaura Denki Kabushiki Kaisha | Voltage supply for operating a plurality of changing transistors in a manner which reduces minority carrier disruption of adjacent memory cells |
JPS577161A (en) * | 1980-06-16 | 1982-01-14 | Toshiba Corp | Mos semiconductor device |
JPS587860A (ja) * | 1981-07-06 | 1983-01-17 | Hitachi Ltd | 半導体記憶装置 |
JPS5851558A (ja) * | 1981-09-22 | 1983-03-26 | Nec Corp | Mos型半導体装置 |
JPS5863159A (ja) * | 1981-10-09 | 1983-04-14 | Toshiba Corp | 半導体装置 |
JPS602782B2 (ja) * | 1982-06-30 | 1985-01-23 | 富士通株式会社 | 半導体記憶装置 |
JPS59111357A (ja) * | 1982-12-17 | 1984-06-27 | Nec Corp | C−mos集積回路とその使用方法 |
JPS59197159A (ja) * | 1983-04-22 | 1984-11-08 | Nec Corp | 半導体装置 |
JPS6032356A (ja) * | 1983-08-03 | 1985-02-19 | Sharp Corp | Νチャンネルmos集積回路装置 |
US4658283A (en) * | 1984-07-25 | 1987-04-14 | Hitachi, Ltd. | Semiconductor integrated circuit device having a carrier trapping trench arrangement |
JPS6132567A (ja) * | 1984-07-25 | 1986-02-15 | Hitachi Micro Comput Eng Ltd | 半導体集積回路装置 |
US4665420A (en) * | 1984-11-08 | 1987-05-12 | Rca Corporation | Edge passivated charge-coupled device image sensor |
US5324982A (en) | 1985-09-25 | 1994-06-28 | Hitachi, Ltd. | Semiconductor memory device having bipolar transistor and structure to avoid soft error |
US6740958B2 (en) | 1985-09-25 | 2004-05-25 | Renesas Technology Corp. | Semiconductor memory device |
IT1218128B (it) * | 1987-03-05 | 1990-04-12 | Sgs Microelettronica Spa | Struttura integrata per rete di trasferimento di segnali,particolarmente per circuito di pilotaggio per transistori mos di potenza |
JP2712079B2 (ja) * | 1988-02-15 | 1998-02-10 | 株式会社東芝 | 半導体装置 |
JPS63178351U (fr) * | 1988-05-12 | 1988-11-18 | ||
JPS6432670A (en) * | 1988-06-15 | 1989-02-02 | Hitachi Ltd | Semiconductor memory circuit device |
JPH0828467B2 (ja) * | 1988-11-15 | 1996-03-21 | 株式会社東芝 | 半導体装置 |
US4866567A (en) * | 1989-01-06 | 1989-09-12 | Ncr Corporation | High frequency integrated circuit channel capacitor |
US5286986A (en) * | 1989-04-13 | 1994-02-15 | Kabushiki Kaisha Toshiba | Semiconductor device having CCD and its peripheral bipolar transistors |
JPH07105458B2 (ja) * | 1989-11-21 | 1995-11-13 | 株式会社東芝 | 複合型集積回路素子 |
JP2523409B2 (ja) * | 1990-05-02 | 1996-08-07 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
DE4143521C2 (de) * | 1990-06-28 | 1995-04-06 | Mitsubishi Electric Corp | Halbleiterspeichervorrichtung |
KR950009893B1 (ko) * | 1990-06-28 | 1995-09-01 | 미쓰비시 뎅끼 가부시끼가이샤 | 반도체기억장치 |
US5235216A (en) * | 1991-07-15 | 1993-08-10 | International Business Machines Corporation | Bipolar transistor using emitter-base reverse bias carrier generation |
US5684314A (en) * | 1996-03-18 | 1997-11-04 | Kenney; Donald M. | Trench capacitor precharge structure and leakage shield |
JPH10223853A (ja) * | 1997-02-04 | 1998-08-21 | Mitsubishi Electric Corp | 半導体装置 |
US6586283B2 (en) * | 2000-03-30 | 2003-07-01 | Agilent Technologies, Inc. | Apparatus and method for protecting integrated circuit charge storage elements from photo-induced currents |
JP4781509B2 (ja) * | 2000-09-28 | 2011-09-28 | ルネサスエレクトロニクス株式会社 | Cmosイメージセンサ及びcmosイメージセンサの製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4044373A (en) * | 1967-11-13 | 1977-08-23 | Hitachi, Ltd. | IGFET with gate protection diode and antiparasitic isolation means |
US3899793A (en) * | 1968-08-24 | 1975-08-12 | Sony Corp | Integrated circuit with carrier killer selectively diffused therein and method of making same |
US3573509A (en) * | 1968-09-09 | 1971-04-06 | Texas Instruments Inc | Device for reducing bipolar effects in mos integrated circuits |
US3925120A (en) * | 1969-10-27 | 1975-12-09 | Hitachi Ltd | A method for manufacturing a semiconductor device having a buried epitaxial layer |
GB1263817A (en) * | 1969-11-10 | 1972-02-16 | Marconi Co Ltd | Improvements in or relating to integrated circuits |
US3701198A (en) * | 1970-08-14 | 1972-10-31 | Bell Telephone Labor Inc | Monolithic integrated circuit structures and methods of making same |
DE2055661A1 (de) * | 1970-11-12 | 1972-06-29 | Itt Ind Gmbh Deutsche | Monolithisch integrierte Festkörperschaltung |
US3703669A (en) * | 1971-08-12 | 1972-11-21 | Motorola Inc | Photocurrent cross talk isolation |
JPS492437A (fr) * | 1972-04-18 | 1974-01-10 | ||
US3965481A (en) * | 1974-11-22 | 1976-06-22 | U.S. Philips Corporation | Charge transfer device with J FET isolation and means to drain stray charge |
-
1975
- 1975-12-26 JP JP50156621A patent/JPS5279787A/ja active Pending
-
1976
- 1976-12-23 US US05/753,814 patent/US4163245A/en not_active Expired - Lifetime
- 1976-12-23 DE DE19762658666 patent/DE2658666A1/de active Granted
- 1976-12-24 FR FR7639089A patent/FR2336801A1/fr active Granted
- 1976-12-24 GB GB54120/76A patent/GB1566580A/en not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2399125A1 (fr) * | 1977-07-28 | 1979-02-23 | Fujitsu Ltd | Memoire a semi-conducteurs en circuit integre |
EP0018764A1 (fr) * | 1979-05-02 | 1980-11-12 | Fujitsu Limited | Dispositif semiconducteur dans lequel un "soft error" causé par des particules alpha est évité |
EP0143157A1 (fr) * | 1983-10-27 | 1985-06-05 | International Business Machines Corporation | Circuit de pompage de charge pour un générateur de tension de substrat |
US4591738A (en) * | 1983-10-27 | 1986-05-27 | International Business Machines Corporation | Charge pumping circuit |
EP0171597A1 (fr) * | 1984-08-13 | 1986-02-19 | International Business Machines Corporation | Structure à pompage de charges |
EP0224213A2 (fr) * | 1985-11-22 | 1987-06-03 | Nec Corporation | Dispositif de mémoire semi-conducteur |
EP0224213A3 (fr) * | 1985-11-22 | 1987-10-28 | Nec Corporation | Dispositif de mémoire semi-conducteur |
Also Published As
Publication number | Publication date |
---|---|
GB1566580A (en) | 1980-05-08 |
JPS5279787A (en) | 1977-07-05 |
US4163245A (en) | 1979-07-31 |
FR2336801B1 (fr) | 1981-07-31 |
DE2658666C2 (fr) | 1987-06-04 |
DE2658666A1 (de) | 1977-07-07 |
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