FR2317680B1 - Photo-reserves thermiquement stables et positives - Google Patents

Photo-reserves thermiquement stables et positives

Info

Publication number
FR2317680B1
FR2317680B1 FR7615556A FR7615556A FR2317680B1 FR 2317680 B1 FR2317680 B1 FR 2317680B1 FR 7615556 A FR7615556 A FR 7615556A FR 7615556 A FR7615556 A FR 7615556A FR 2317680 B1 FR2317680 B1 FR 2317680B1
Authority
FR
France
Prior art keywords
reserves
thermally stable
positive photo
photo
positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7615556A
Other languages
English (en)
Other versions
FR2317680A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GAF Corp
Original Assignee
GAF Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GAF Corp filed Critical GAF Corp
Publication of FR2317680A1 publication Critical patent/FR2317680A1/fr
Application granted granted Critical
Publication of FR2317680B1 publication Critical patent/FR2317680B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
FR7615556A 1975-07-18 1976-05-21 Photo-reserves thermiquement stables et positives Expired FR2317680B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/597,226 US4093461A (en) 1975-07-18 1975-07-18 Positive working thermally stable photoresist composition, article and method of using

Publications (2)

Publication Number Publication Date
FR2317680A1 FR2317680A1 (fr) 1977-02-04
FR2317680B1 true FR2317680B1 (fr) 1981-08-07

Family

ID=24390630

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7615556A Expired FR2317680B1 (fr) 1975-07-18 1976-05-21 Photo-reserves thermiquement stables et positives

Country Status (9)

Country Link
US (1) US4093461A (fr)
JP (1) JPS5213315A (fr)
CA (1) CA1063416A (fr)
CH (1) CH619055A5 (fr)
DE (1) DE2631535A1 (fr)
FR (1) FR2317680B1 (fr)
GB (1) GB1548583A (fr)
IT (1) IT1060035B (fr)
NL (1) NL164975C (fr)

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US4284706A (en) * 1979-12-03 1981-08-18 International Business Machines Corporation Lithographic resist composition for a lift-off process
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US4329419A (en) * 1980-09-03 1982-05-11 E. I. Du Pont De Nemours And Company Polymeric heat resistant photopolymerizable composition for semiconductors and capacitors
US4410612A (en) * 1980-09-03 1983-10-18 E. I. Du Pont De Nemours And Company Electrical device formed from polymeric heat resistant photopolymerizable composition
DE3110632A1 (de) * 1981-03-19 1982-09-30 Hoechst Ag, 6000 Frankfurt Verfahren zum einbrennen von lichtempflindlichen schichten bei der herstellung von druckformen
JPS57168942A (en) * 1981-04-13 1982-10-18 Hitachi Ltd Photosensitive polymer composition
US4476216A (en) * 1981-08-03 1984-10-09 Amdahl Corporation Method for high resolution lithography
US4439516A (en) * 1982-03-15 1984-03-27 Shipley Company Inc. High temperature positive diazo photoresist processing using polyvinyl phenol
JPS58223149A (ja) * 1982-06-22 1983-12-24 Toray Ind Inc 感光性ポリイミド用現像液
JPS59100135A (ja) * 1982-11-30 1984-06-09 Japan Synthetic Rubber Co Ltd 樹脂組成物
US4857435A (en) * 1983-11-01 1989-08-15 Hoechst Celanese Corporation Positive photoresist thermally stable compositions and elements having deep UV response with maleimide copolymer
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JPS60169852A (ja) * 1984-02-14 1985-09-03 Fuji Photo Film Co Ltd 湿し水不要ネガ型感光性平版印刷版の製版法
US4745045A (en) * 1985-03-11 1988-05-17 International Business Machines Corporation Method for improving resolution in microelectronic circuits using photoresist overlayer by using thermally processed polyimide underlayer formed from positive photoresist and polyamic acid
CA1255142A (fr) * 1985-03-11 1989-06-06 Edward C. Fredericks Methode et compose pour accroitre la definition des conducteurs dans les circuits microelectroniques
US4942108A (en) * 1985-12-05 1990-07-17 International Business Machines Corporation Process of making diazoquinone sensitized polyamic acid based photoresist compositions having reduced dissolution rates in alkaline developers
EP0224680B1 (fr) * 1985-12-05 1992-01-15 International Business Machines Corporation Compositions photoréserves à base de quinonediazides sensibilisées par des acides polyamides ayant un taux de dissolution réduit dans les révélateurs basiques
CA1308596C (fr) * 1986-01-13 1992-10-13 Rohm And Haas Company Structure microplastique et methode de fabrication correspondante
US4720445A (en) * 1986-02-18 1988-01-19 Allied Corporation Copolymers from maleimide and aliphatic vinyl ethers and esters used in positive photoresist
JPH0721642B2 (ja) * 1986-06-19 1995-03-08 宇部興産株式会社 感光性ポリイミドのパタ−ン形成方法
JPH0644154B2 (ja) * 1986-07-03 1994-06-08 宇部興産株式会社 有機溶媒可溶性のポジ型感光性ポリイミド組成物
US5021320A (en) * 1986-10-02 1991-06-04 Hoechst Celanese Corporation Polyamide containing the hexafluoroisopropylidene group with O-quinone diazide in positive working photoresist
ATE67611T1 (de) * 1986-10-02 1991-10-15 Hoechst Celanese Corp Polyamide mit hexafluorisopropyliden-gruppen, diese enthaltende positiv arbeitende lichtempfindliche gemische und damit hergestellte aufzeichnungsmaterialien.
US5077378A (en) * 1986-10-02 1991-12-31 Hoechst Celanese Corporation Polyamide containing the hexafluoroisopropylidene group
EP0291779B1 (fr) * 1987-05-18 1994-07-27 Siemens Aktiengesellschaft Réserves positives résistantes à la chaleur et procédé de fabrication de structures formant réserve résistantes à la chaleur
US5037720A (en) * 1987-07-21 1991-08-06 Hoechst Celanese Corporation Hydroxylated aromatic polyamide polymer containing bound naphthoquinone diazide photosensitizer, method of making and use
DE3835737A1 (de) * 1988-10-20 1990-04-26 Ciba Geigy Ag Positiv-fotoresists mit erhoehter thermischer stabilitaet
DE3837612A1 (de) * 1988-11-05 1990-05-23 Ciba Geigy Ag Positiv-fotoresists von polyimid-typ
US5024922A (en) * 1988-11-07 1991-06-18 Moss Mary G Positive working polyamic acid/imide and diazoquinone photoresist with high temperature pre-bake
DE69128187T2 (de) * 1990-09-28 1998-03-26 Toshiba Kawasaki Kk Fotoempfindliche Harzzusammensetzung zum Herstellen eines Polyimidfilmmusters und Verfahren zum Herstellen eines Polyimidfilmmusters
JP2890213B2 (ja) * 1991-02-25 1999-05-10 チッソ株式会社 感光性重合体組成物及びパターンの形成方法
JP3677191B2 (ja) 1999-03-15 2005-07-27 株式会社東芝 感光性ポリイミド用現像液、ポリイミド膜パターン形成方法、及び電子部品
JP4529252B2 (ja) 1999-09-28 2010-08-25 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、パターンの製造法及び電子部品
KR100422971B1 (ko) 1999-12-29 2004-03-12 삼성전자주식회사 나프톨 구조를 가진 이온형 광산발생제 및 이를 이용한감광성 폴리이미드 조성물
JP3773845B2 (ja) 2000-12-29 2006-05-10 三星電子株式会社 ポジティブ型感光性ポリイミド前駆体およびこれを含む組成物
KR100532590B1 (ko) * 2002-11-07 2005-12-01 삼성전자주식회사 감광성 폴리이미드 전구체용 가용성 폴리이미드 및, 이를포함하는 감광성 폴리이드 전구체 조성물
JP4775261B2 (ja) 2004-05-07 2011-09-21 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、パターンの製造方法及び電子部品
US7638254B2 (en) 2004-05-07 2009-12-29 Hitachi Chemical Dupont Microsystems Ltd Positive photosensitive resin composition, method for forming pattern, and electronic part
TWI407255B (zh) * 2005-09-22 2013-09-01 Hitachi Chem Dupont Microsys 負片型感光性樹脂組成物、圖案形成方法以及電子零件
EP1995635A4 (fr) * 2006-03-16 2011-03-30 Asahi Glass Co Ltd Composition de résine aromatique fluorée photosensible de type négatif
WO2007125921A1 (fr) * 2006-04-28 2007-11-08 Asahi Kasei Kabushiki Kaisha Composition de resine photosensible et film photosensible
WO2007148384A1 (fr) * 2006-06-20 2007-12-27 Hitachi Chemical Dupont Microsystems Ltd. Composition de résine photosensible négative, procédé de formation d'un motif imprimé et élément électronique
WO2008111470A1 (fr) * 2007-03-12 2008-09-18 Hitachi Chemical Dupont Microsystems, Ltd. Composition de résine photosensible, procédé de fabrication d'un film durci à motifs à l'aide de celle-ci et composant électronique
JP5176872B2 (ja) * 2007-10-29 2013-04-03 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、パタ−ンの製造方法及び電子部品
WO2009123122A1 (fr) 2008-03-31 2009-10-08 大日本印刷株式会社 Agent générateur de base, composition de résine photosensible, matériau formant motifs contenant la composition de résine photosensible, procédé de formation de motifs au moyen de la composition de résine photosensible, et article
US8071273B2 (en) 2008-03-31 2011-12-06 Dai Nippon Printing Co., Ltd. Polyimide precursor, resin composition comprising the polyimide precursor, pattern forming method using the resin composition, and articles produced by using the resin composition
US9274438B1 (en) * 2008-06-25 2016-03-01 Western Digital (Fremont), Llc Method and system for exposing photoresist in a microelectric device
US8697332B2 (en) 2009-03-31 2014-04-15 Dai Nippon Printing Co., Ltd. Base generator, photosensitive resin composition, pattern forming material comprising the photosensitive resin composition, pattern forming method using the photosensitive resin composition and products comprising the same
US9134608B2 (en) 2010-01-21 2015-09-15 Hitachi Chemical Dupont Microsystems, Ltd. Positive photosensitive resin composition, method for producing patterned cured film and electronic component
US9519221B2 (en) * 2014-01-13 2016-12-13 Applied Materials, Inc. Method for microwave processing of photosensitive polyimides
KR101580898B1 (ko) 2014-04-18 2015-12-31 (주)휴넷플러스 폴리실세스퀴옥산 공중합체 및 이를 포함하는 감광성 수지 조성물
CN107407875B (zh) 2015-03-16 2021-08-24 太阳控股株式会社 正型感光性树脂组合物、干膜、固化物和印刷电路板
KR102071112B1 (ko) 2017-10-11 2020-01-29 타코마테크놀러지 주식회사 바인더 수지 및 이를 포함하는 감광성 수지 조성물 또는 코팅 용액
JP7233189B2 (ja) 2018-09-21 2023-03-06 太陽ホールディングス株式会社 感光性樹脂組成物、ドライフィルム、硬化物および電子部品
JP2021092758A (ja) 2019-12-03 2021-06-17 東京応化工業株式会社 ネガ型感光性樹脂組成物及び硬化膜の製造方法
JP2022175020A (ja) 2021-05-12 2022-11-25 東京応化工業株式会社 感光性樹脂、ネガ型感光性樹脂組成物、パターン化された硬化膜の製造方法及びカルボキシ基含有樹脂

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US3179634A (en) * 1962-01-26 1965-04-20 Du Pont Aromatic polyimides and the process for preparing them
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US3623870A (en) * 1969-07-22 1971-11-30 Bell Telephone Labor Inc Technique for the preparation of thermally stable photoresist
DE2000623C3 (de) * 1970-01-08 1979-06-28 Agfa-Gevaert Ag, 5090 Leverkusen Photographisches Verfahren zur Herstellung von Bildern
US3759711A (en) * 1970-09-16 1973-09-18 Eastman Kodak Co Er compositions and elements nitrogen linked apperding quinone diazide light sensitive vinyl polym
DE2053363C3 (de) * 1970-10-30 1980-09-18 Hoechst Ag, 6000 Frankfurt Lichtempfindliches Gemisch
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Also Published As

Publication number Publication date
IT1060035B (it) 1982-07-10
CH619055A5 (fr) 1980-08-29
CA1063416A (fr) 1979-10-02
JPS5213315A (en) 1977-02-01
NL164975B (nl) 1980-09-15
NL7607897A (nl) 1977-01-20
GB1548583A (en) 1979-07-18
DE2631535A1 (de) 1977-02-03
NL164975C (nl) 1981-02-16
US4093461A (en) 1978-06-06
FR2317680A1 (fr) 1977-02-04

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Legal Events

Date Code Title Description
ST Notification of lapse