JPS5622428A - Polyimide pattern forming method - Google Patents
Polyimide pattern forming methodInfo
- Publication number
- JPS5622428A JPS5622428A JP9725879A JP9725879A JPS5622428A JP S5622428 A JPS5622428 A JP S5622428A JP 9725879 A JP9725879 A JP 9725879A JP 9725879 A JP9725879 A JP 9725879A JP S5622428 A JPS5622428 A JP S5622428A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polyimide
- remove
- pattern
- photosensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0387—Polyamides or polyimides
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
PURPOSE:To remove perfectly a residual film resulting from development inclined to remain on nondeveloped areas, by processing with an etching agent a polyimide pattern obtained by heating a patternized polyimide precursor in thin film. CONSTITUTION:A film of a photosensitive polyimide precursor containing a photosensitive group, such as a vinyl or acrylic group, and a photosensitive compound, such as bichromate or quinonediazide is provided on a substrate, such as a aluminum plate, this film is patternwise exposed to light, and developed to remove the nonexposed areas, then it is heat-processed to convert said precursor pattern into a polyimide pattern. The obtained polyimide pattern is etched to perfectly remove a residual film resulting from development. As this etching agent, hydrazine alone or mixed with ethylene diamine is preferable, and this etching is carried out to an extent of approximate 1/5 film thickness reduction.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9725879A JPS5622428A (en) | 1979-08-01 | 1979-08-01 | Polyimide pattern forming method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9725879A JPS5622428A (en) | 1979-08-01 | 1979-08-01 | Polyimide pattern forming method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5622428A true JPS5622428A (en) | 1981-03-03 |
Family
ID=14187518
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9725879A Pending JPS5622428A (en) | 1979-08-01 | 1979-08-01 | Polyimide pattern forming method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5622428A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5866940A (en) * | 1981-10-19 | 1983-04-21 | Hitachi Ltd | Developer for heat resistant photosensitive resin |
EP0194470A2 (en) * | 1985-03-11 | 1986-09-17 | International Business Machines Corporation | Method and composition of matter for improving conductor resolution of microelectronic circuits |
JPH07164152A (en) * | 1993-10-14 | 1995-06-27 | Esab Group Inc:The | Plasma arc torch with interior gas switching means |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4834039A (en) * | 1971-09-03 | 1973-05-15 | ||
US3957512A (en) * | 1973-02-22 | 1976-05-18 | Siemens Aktiengesellschaft | Method for the preparation of relief structures |
JPS5213315A (en) * | 1975-07-18 | 1977-02-01 | Gaf Corp | Photoresist composition |
JPS53127723A (en) * | 1977-04-13 | 1978-11-08 | Hitachi Ltd | Image formation method |
-
1979
- 1979-08-01 JP JP9725879A patent/JPS5622428A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4834039A (en) * | 1971-09-03 | 1973-05-15 | ||
US3957512A (en) * | 1973-02-22 | 1976-05-18 | Siemens Aktiengesellschaft | Method for the preparation of relief structures |
JPS5213315A (en) * | 1975-07-18 | 1977-02-01 | Gaf Corp | Photoresist composition |
JPS53127723A (en) * | 1977-04-13 | 1978-11-08 | Hitachi Ltd | Image formation method |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5866940A (en) * | 1981-10-19 | 1983-04-21 | Hitachi Ltd | Developer for heat resistant photosensitive resin |
EP0194470A2 (en) * | 1985-03-11 | 1986-09-17 | International Business Machines Corporation | Method and composition of matter for improving conductor resolution of microelectronic circuits |
JPH07164152A (en) * | 1993-10-14 | 1995-06-27 | Esab Group Inc:The | Plasma arc torch with interior gas switching means |
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