EP4095287A1 - Électrode poreuse - Google Patents
Électrode poreuse Download PDFInfo
- Publication number
- EP4095287A1 EP4095287A1 EP21175811.5A EP21175811A EP4095287A1 EP 4095287 A1 EP4095287 A1 EP 4095287A1 EP 21175811 A EP21175811 A EP 21175811A EP 4095287 A1 EP4095287 A1 EP 4095287A1
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- EP
- European Patent Office
- Prior art keywords
- mold
- network
- support structure
- electrode
- porous
- Prior art date
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- 239000011148 porous material Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 25
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000000446 fuel Substances 0.000 claims description 10
- 238000000465 moulding Methods 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 238000011049 filling Methods 0.000 claims description 7
- 238000007641 inkjet printing Methods 0.000 claims description 5
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 49
- 239000010949 copper Substances 0.000 description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 17
- 239000007789 gas Substances 0.000 description 14
- 230000009467 reduction Effects 0.000 description 14
- 239000012528 membrane Substances 0.000 description 13
- 229910001868 water Inorganic materials 0.000 description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 10
- 239000006260 foam Substances 0.000 description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 239000012530 fluid Substances 0.000 description 8
- 229910000838 Al alloy Inorganic materials 0.000 description 7
- 229910000881 Cu alloy Inorganic materials 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
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- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 6
- 239000004327 boric acid Substances 0.000 description 6
- 239000003792 electrolyte Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 239000002106 nanomesh Substances 0.000 description 6
- IIACRCGMVDHOTQ-UHFFFAOYSA-M sulfamate Chemical compound NS([O-])(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-M 0.000 description 6
- 229910000990 Ni alloy Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000004070 electrodeposition Methods 0.000 description 4
- 239000000080 wetting agent Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000001509 sodium citrate Substances 0.000 description 3
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- -1 acetic acid) Chemical class 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000003011 anion exchange membrane Substances 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000003623 enhancer Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical group [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000006262 metallic foam Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
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- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910001854 alkali hydroxide Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000005349 anion exchange Methods 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
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- 239000012535 impurity Substances 0.000 description 1
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- 235000012054 meals Nutrition 0.000 description 1
- 238000010907 mechanical stirring Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 description 1
- 230000008569 process Effects 0.000 description 1
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- 239000002904 solvent Substances 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
- C25B11/02—Electrodes; Manufacture thereof not otherwise provided for characterised by shape or form
- C25B11/03—Electrodes; Manufacture thereof not otherwise provided for characterised by shape or form perforated or foraminous
- C25B11/031—Porous electrodes
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/08—Perforated or foraminous objects, e.g. sieves
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/045—Anodisation of aluminium or alloys based thereon for forming AAO templates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
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- H01M4/66—Selection of materials
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- H—ELECTRICITY
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- H01M4/00—Electrodes
- H01M4/86—Inert electrodes with catalytic activity, e.g. for fuel cells
- H01M4/8605—Porous electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01M4/00—Electrodes
- H01M4/86—Inert electrodes with catalytic activity, e.g. for fuel cells
- H01M4/8605—Porous electrodes
- H01M4/8621—Porous electrodes containing only metallic or ceramic material, e.g. made by sintering or sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/86—Inert electrodes with catalytic activity, e.g. for fuel cells
- H01M4/8663—Selection of inactive substances as ingredients for catalytic active masses, e.g. binders, fillers
- H01M4/8673—Electrically conductive fillers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/86—Inert electrodes with catalytic activity, e.g. for fuel cells
- H01M4/88—Processes of manufacture
- H01M4/8803—Supports for the deposition of the catalytic active composition
- H01M4/8807—Gas diffusion layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/86—Inert electrodes with catalytic activity, e.g. for fuel cells
- H01M4/88—Processes of manufacture
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- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M8/00—Fuel cells; Manufacture thereof
- H01M8/18—Regenerative fuel cells, e.g. redox flow batteries or secondary fuel cells
- H01M8/184—Regeneration by electrochemical means
- H01M8/188—Regeneration by electrochemical means by recharging of redox couples containing fluids; Redox flow type batteries
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/06—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
- C25D11/08—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used containing inorganic acids
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/06—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
- C25D11/10—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used containing organic acids
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/18—After-treatment, e.g. pore-sealing
- C25D11/24—Chemical after-treatment
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
- C25D3/14—Electroplating: Baths therefor from solutions of nickel or cobalt from baths containing acetylenic or heterocyclic compounds
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/50—Fuel cells
Definitions
- the present invention relates to the field of porous electrodes, and more particularly to the field of porous electrodes for use in electrolyzers and other electrochemical devices.
- nanomeshes comprise interconnected metal nanowires which are fabricated through electrochemical plating in a three-dimensional aluminium oxide template.
- a rigid nanomesh combining a porosity of 75% and the high volumetric surface area of ⁇ 30 cm 2 for each ⁇ m nanomesh thickness has been obtained.
- the nanomeshes described by Zankowski et al. have been shown to be vastly superior to other state-of-the-art porous and nanostructured materials such as nickel foams.
- nickel nanomeshes were compared to a nickel foam in the electrocatalytic production of H 2 and it was shown that the 4.5 ⁇ m nanomesh outperformed a 300 times thicker (mm thick) Ni foam. This can be attributed to the high surface area (130x compared to 10x) and the improved mass transport through the highly porous ⁇ m thin nanomesh electrode.
- the few ⁇ m thin nanomesh cannot be fabricated without a support (either rigid such as a Si wafer or a closed metal foil) and without support it does not have the mechanical robustness to be handled during cell assembly or even processing.
- the presence of the support renders the nanomesh poorly suitable as an electrode in many applications that greatly benefit from gases and liquids completely crossing through the electrode.
- the present invention relates to a porous electrode comprising:
- the present invention relates to a method for the formation of a porous electrode according to any embodiment of the first aspect, comprising the steps of:
- the present invention relates to an electrochemical device comprising a porous electrode according to any embodiment of the first aspect, the electrochemical device being selected from an electrolyzer (e.g., for water electrolysis, CO 2 reduction, N 2 reduction, O 2 reduction, or organic synthesis), a fuel cell, and a battery (e.g., a redox flow battery).
- an electrolyzer e.g., for water electrolysis, CO 2 reduction, N 2 reduction, O 2 reduction, or organic synthesis
- a fuel cell e.g., a redox flow battery
- the present invention relates to the use of an electrode according to any embodiment of the first aspect as a filter.
- the porous electrode has a high electrochemical surface area.
- first, second, third, and the like in the description and in the claims are used for distinguishing between similar elements and not necessarily for describing a sequence, either temporally, spatially, in ranking or in any other manner. It is to be understood that the terms so used are interchangeable under appropriate circumstances and that the embodiments of the invention described herein are capable of operation in other sequences than described or illustrated herein.
- top, bottom, over, under, and the like in the description and the claims are used for descriptive purposes and not necessarily for describing relative positions. It is to be understood that the terms so used are interchangeable under appropriate circumstances and that the embodiments of the invention described herein are capable of operation in other orientations than described or illustrated herein.
- an element described herein of an apparatus embodiment is an example of a means for carrying out the function performed by the element for the purpose of carrying out the invention.
- the present invention relates to a porous electrode (1).
- the porous electrode (1) may be a gas diffusion electrode (1), i.e. an electrode (1) suitable for gases to pass through it from side to side.
- a gas diffusion electrode (1) i.e. an electrode (1) suitable for gases to pass through it from side to side.
- highly porous materials with an extended surface area and mechanical robustness such as few micrometer thin metal networks (nanomeshes) remained supported by a non-porous substrate or were attached to a metal non-porous foil of a similar thickness formed by an overplating step.
- nanomeshes as electrodes in devices using gases and/or liquid electrolytes (e.g.
- the porous electrodes (1) of the present invention by comprising a support structure (3) having openings (5), are suitable for use in devices using gases/liquids crossing through the electrode and display, at the same time, a part (the network (2)) having a high porosity and an extended surface area, while having overall the mechanical robustness to be handled both during cell assembly and during processing.
- the porous electrode (1) comprises an electrically conductive porous network (2) of interconnected wires and an electrically conductive support structure (3).
- Both, the conductive porous network (2) and the conductive support structure (3) are porous.
- the presence of the conductive support structure (3) allows the porous electrode (1) to be free-standing, i.e., it can be handled without losing its mechanical integrity.
- the network (2) is in direct physical and electrical contact with the support structure (3). In preferred embodiments, this is achieved by having the network (2) and the support structure (3) forming a single piece. In other words, the network (2) and the support structure (3) may be monolithically integrated. In these embodiments, the network (2) and the support structure (3) typically comprise a same material. In other embodiments, the network (2) and the support structure (3) do not comprise the same material. Different materials for the network (2) and the support structure can be advantageous to tune the mechanical properties and the catalytic properties independently.
- both the electrically conductive network (2) and the electrically conductive support structure (3) comprise a same material, most preferably nickel, nickel alloys, or copper. However, they may also differ in their material composition, for example a copper electrically conductive network (2) with nickel electrically conductive support structure (3).
- the network (2) has a volumetric surface area of from 2 m 2 /cm 3 to 90 m 2 /cm 3 .
- the porosity of the network (2) is from 50% to 90%.
- the electrically conductive network (2) of interconnected wires may comprise a metal.
- the electrically conductive network (2) of interconnected wires may comprise Ni, a Ni alloy, or copper.
- the electrically conductive network (2) of interconnected wires comprises Ni.
- the wires are made of a metal or have a metal core and a coating thereon.
- the wires are made of Ni (or a Ni alloy or Cu), or have a Ni (or a Ni alloy, or a Cu core) and a coating thereon.
- the wires are made of Ni or have a Ni core and a coating thereon.
- the electrically conductive network (2) of interconnected wires may have a total thickness of from 1 to 100 ⁇ m, preferably from 2 to 10 ⁇ m.
- the electrically conductive network (2) of interconnected wires may have a total thickness of from 1 to 100 ⁇ m and a surface of the support structure, facing away from the network, may have openings (5) representing from 51 to 90% of its surface area. This is advantageous because it provides a sufficiently strong network to withstand a relatively high fluid flow enabled by the openness of the support structure.
- the wires may be from 10 to 200 nm thick, preferably from 30 to 60 nm thick.
- a surface of the electrically conductive support structure (3), facing away from the network (2), has openings (5) representing from 2 to 90% of its surface area, preferably from 15 to 75%, and more preferably from 50 to 70% of its surface area.
- the openings (5) are fluidly connected to the pores of the network (2). In other words, they enable fluid (liquid and/or gas) transport in and out of the network (2).
- Fig. 1 shows a schematic representation of a porous electrode (1) according to the first aspect comprising an electrically conductive porous network (2) (black) and a conductive support structure (3) thereon (white). Fluid (liquid or gas) crossing the network (2) via the support structure (3) is represented by the top arrow. Fluid (liquid or gas) crossing the support structure (3) via the network (2) is represented by the bottom arrow.
- the support structure (3) acts as a mechanical reinforcement for the network (2).
- the electrically conductive support (3) may comprise a metal.
- the electrically conductive support structure (3) may comprise Ni, a Ni alloy, or Cu, preferably Ni.
- the electrically conductive support structure (3) may take any form. Typically, it forms a pattern.
- the electrically conductive support structure (3) may form a grid, such as a honeycomb grid. This is advantageous as it allows obtaining high mechanical strength.
- the electrically conductive support structure (3) may form a set of parallel lines. This is advantageous as it allows a particularly good flow.
- the pattern of the support structure (3) may be formed of ridges having a width measured perpendicularly to the height of the ridges, of from 50 to 1000 ⁇ m.
- ridges may cross connect to form a grid, such as a honeycomb grid, and the width of the ridges interconnecting to form the grid may be from 50 to 1000 ⁇ m.
- the support structure (3) forms a set of parallel lines, the width of these lines may be from 50 to 1000 ⁇ m.
- the electrically conductive support structure (3) may have a total thickness (or height) of from 1 to 100 ⁇ m, preferably from 2 to 20 ⁇ m, more preferably from 2 ⁇ m to 10 ⁇ m, yet more preferably from 3 ⁇ m to 7 ⁇ m.
- the porous electrode may be a gas diffusion electrode for CO 2 , N 2 or O 2 reduction from a gas phase, for a fuel cell or for organic synthesis.
- the present invention relates to a method for the formation of a porous electrode (1) according to any embodiment of the first aspect.
- the method comprises steps a, b, c, and d.
- the method of the present invention permits to form a porous electrode (1) having enough porosity to allow fluids (e.g., gases) to pass through while the support structure (3), e.g., a grid support structure (3), is dense enough to act as a "window frame" for the network (2), which is typically ⁇ m thin, thereby providing mechanical support without preventing the passage of fluids.
- fluids e.g., gases
- Step a comprises forming a first mold comprising a network (2) of interconnected channels, the mold being suitable for molding an electrically conductive network (2) as described in any embodiment of the first aspect.
- the mold may be suitable for molding an electrically conductive network (2) of interconnected wires having a volumetric surface area of from 2 m 2 /cm 3 to 90 m 2 /cm 3 , and a porosity of from 50% to 90%.
- step a may comprise anodizing a metal layer.
- step a may comprise anodizing a layer of an alloy of Al and Cu.
- the alloy of Al and Cu may comprise:
- the alloy of Al and Cu may comprise:
- the alloy of Al and Cu may comprise:
- this alloy layer may be supported on a substrate.
- the substrate may comprise a Si substrate having a TiN layer thereon, and the alloy layer may be on the TiN layer.
- anodizing the Al/Cu alloy layer may comprise subjecting the Al/Cu alloy layer to a voltage of from 10 to 250 V, preferably from 30 to 85V. This is preferably performed in an acid solution.
- suitable acid solution is an oxalic acid solution.
- suitable acid solutions are sulfuric acid solutions and phosphoric acid solutions.
- the concentration of the acid solution can, for instance, be from 0.1 to 0.5M, preferably from 0.2 to 0.4M.
- the temperature of the acid solution can for instance be from -5 to 50°C, preferably from 20 to 40°C.
- the voltage is preferably maintained until the mold is obtained. For instance, this can involve maintaining the voltage until 5 minutes after that the current starts to drop.
- Various Al/Cu alloys behave in a similar way by forming a similar channel inter-distance at a similar voltage.
- Small inter-channel distances ranging between 20 and 50nm can typically be obtained (e.g., by using H 2 SO 4 as an electrolyte) under a voltage of from 10 to about 20V.
- Inter-distances of from about 51 to 125 nm can typically be achieved (e.g., in H 2 C 2 O 4 ) under a voltage of from 21 to about 60V.
- Larger inter-distances of from 126 to 225 nm can typically be achieved (e.g., in H 3 PO 4 ) for a voltage of from 61 to 90V. Note that higher inter-channel distances can be obtained for even higher voltages.
- the average inter-channel distance between any two neighbouring channels can, for instance, be tuned from about 20 nm to about 225 nm by increasing the voltage from 10V to 90V (and by eventually adapting the acid accordingly), where the inter-channel distance is set by the cell voltage applied.
- the inter-channel distance increases with voltage and is typically independent from the degree of purity and the nature of the impurities in the aluminium.
- the anodization step transforms the TiN layer into a TiO 2 layer.
- a step of removing the TiO 2 layer may be performed. This removal can for instance be performed with an appropriate liquid etchant.
- An example thereof is a solution comprising NH 4 OH, H 2 O 2 , and H 2 O. From 1 to 5 minutes (e.g., from 3 to 4 minutes) is typically sufficient to remove the TiO 2 layer.
- a washing step is performed between step a and step b. In embodiments, this washing step may comprise rinsing the structure resulting from step a with demineralized water.
- Step b comprises forming a second mold on top of the first mold, the second mold being suitable for molding an electrically conductive support structure (3) as described in any embodiment of the first aspect.
- the second mold may be suitable for molding a support structure (3) having a surface, facing away from the network (2) of interconnected wires, having openings (5) representing from 2 to 90% of its surface area, and having openings (5) that are fluidly connected to the pores of the network (2) of interconnected wires.
- the second mold comprises a wax.
- forming the second mold may comprise printing the second mold on the first mold.
- the second mold is applied by inkjet printing.
- the second mold comprises wax and is applied by inkjet printing.
- the pixel size of the inkjet printing may be from 30 to 60 ⁇ m, preferably from 40 to 50 ⁇ m.
- the second mold may comprise a plurality of pillars or ridges.
- the pillars are arranged in a regular pattern.
- the mean height of the pillars or ridges (i.e., the distance between the top and the bottom of the pillars or ridges measured perpendicularly to the top surface of the pillar or ridge) is from 5 ⁇ m to 200 ⁇ m, preferably from 10 ⁇ m to 50 ⁇ m.
- the relative standard deviation on the height of the pillars or ridges is 10% or less, more preferably 5% or less.
- the mean width of the pillars or ridges, i.e., their smallest dimension measured along the top surface of the pillars or ridges and parallel thereto) is from 30 to 1000 ⁇ m, preferably from 100 to 500 ⁇ m, more preferably from 200 to 300 ⁇ m.
- the relative standard deviation on the width of the pillars or ridges is 10% or less, more preferably 5% or less.
- the mean pillar or ridge width measured at the top of the pillars or ridges is within 10%, more preferably within 5% of the mean pillar or ridge width measured at the bottom of the pillars or ridges.
- the horizontal cross-section of the pillars can have any shape.
- the horizontal cross-section of the pillars is hexagonal. This allows for the formation of an electrically conductive structure having a honeycomb shape, which gives excellent mechanical support while assuring a large proportion of the support structure (3) occupied by openings (5).
- the pattern comprises 2 to 90% open area, preferably comprises from 15 to 90% open area, more preferably from 50 to 90% open area, yet more preferably from 65 to 90% open area.
- Step b is preferably performed with a wax at a temperature of from 50 to 200°C, preferably from 90 to 185 °C, more preferably from 90 to 140 °C, yet more preferably from 90 to 120 °C.
- the first mold is preferably kept at a temperature below 50°C.
- room temperature e.g., a temperature of from 15 to 30°C or 20 to 25°C.
- Room temperature is advantageous when step b is performed after step c. Indeed, since the first mold is already filled, there is no danger that forming the second mold could introduce undesired material in the first mold. Solidification of the wax at contact with the first mold can be done at room temperature and is advantageously easy and cheap to maintain.
- the first mold can also be kept at a temperature below 15°C. For instance, it can be kept below 5°C or below 0°C. This is especially advantageous when step b is performed before step c. Indeed, since the first mold is not yet filled when the second mold is applied, it is advantageous to have the material forming the second mold freeze upon contact with the first mold. This reduces the risk of having undesired material in the first mold.
- Step c comprises filling in the first mold with a first conductive material.
- step c can comprise two sub-steps, a step c1 and a step c2.
- a copper layer may be formed at the bottom of the first mold (typically on the substrate on which the first mold is present, e.g., in the case of an Si substrate having a TiN layer thereon, on the TiN layer).
- the thickness of the copper layer may for instance be from 10 to 1000 nm, preferably from 30 to 100 nm, more preferably from 50 to 80 nm.
- Step c1 typically comprises forming a layer of copper on the bottom of the first mold by electrodeposition of copper. For performing step c1, any copper platting bath is suitable.
- step c1 may be performed with a solution comprising Cu 2+ in acidic conditions.
- the solution may comprise sodium citrate or sulfuric acid.
- the concentration in Cu 2+ may be from 0.001 to 1.0 mol/l.
- a solution comprising 0.5 mol/l of CuSO 4 x5H 2 O and 1 mol/l sodium citrate is adequate.
- sulfuric acid is present in the solution, the concentration of sulfuric acid is preferably kept low to avoid alumina etching, and, for example, may be from 10 mmol/l to 30 mmol/l, preferably from 15 mmol/l to 25 mmol/l.
- the Cu 2+ solution is contacted with the first mold and subjected to a current density of from -2mA/cm 2 to -40mA/cm 2 (galvanostatic deposition), preferably from -5mA/cm 2 to -15mA/cm 2 or to a potential between -0.2 to -0.8V, preferable from -0.3 to -0.7V (potentiostatic deposition).
- the electrodeposition time may be from 10 s to 20 minutes.
- the temperature of the solution used in step c1 may for instance be from 15 °C to 40°C, such as from 25°C to 35°C.
- step c2 comprises filing the rest of the first mold by electrodeposition of Ni.
- a solution comprising Ni sulfamate, boric acid, and NiCl 2 may be used.
- the concentration in Ni sulfamate may, for instance, be from 0.80 to 1.00 mol/l.
- the concentration in Boric acid may, for instance, be from 0.40 to 0.60 mol/l.
- the concentration in NiCl 2 may, for instance, be from 0.03 to 0.05 mol/l.
- One or more additives may be added to the solution. For instance, a wetting agent or an electroplating enhancer can be added.
- Step c2 typically involves applying a current density of from -2mA/cm 2 to -10mA/cm 2 , preferably from -3mA/cm 2 to -7mA/cm 2 .
- Step c2 is typically performed until the first mold is entirely filled. This typically takes from 20 to 50 minutes. If step c is performed before step b, it is advantageous not to overfill the mold (during step c2). This way, no Ni overlayer is formed on and above the first mold.
- the filled mold, and therefore the formed support structure (3) may have a height of from 1 to 100 ⁇ m, preferably from 2 to 20 ⁇ m, more preferably from 2 ⁇ m to 10 ⁇ m, yet more preferably from 3 ⁇ m to 7 ⁇ m..
- Step d comprises filling in at least partially the second mold with a second conductive material. Since molds tend to have more regular edges at their bottom and in their mid-section then at their top, it is advantageous to only partially fill in the mold during step d. this way, the molded support structure can be formed with more regular edges at its top. For instance, from 10 to 90%, preferably from 15 to 75% of the height of the second mold can be filled in step d.
- the first and the second conductive materials may be different or the same.
- step d comprises filing the second mold by electrodeposition of Ni.
- the solution used may be the same as for step c2.
- a solution comprising Ni sulfamate, boric acid, and NiCl 2 may be used.
- the concentration in Ni sulfamate may for instance be from 0.80 to 1.00 mol/l.
- the concentration in boric acid may for instance be from 0.40 to 0.60 mol/l.
- the concentration in NiCl 2 may for instance be from 0.03 to 0.05 mol/l.
- One or more additives may be added to the solution. For instance, a wetting agent or an electroplating enhancer can be added. Before to apply a current, the solution is preferably left in contact with the second mask for from 2 to 8 minutes, preferably from 3 to 7 minutes. This period enables the etching of oxide at the top of the first mold.
- Step b is performed after step a and either before step c or after step c and before step d.
- the support structure (3) is made directly on the network (2) structure. This allows the support structure (3) to be seamlessly connected to the network (2), thereby forming a monolithic structure.
- steps c and d may be performed by plating.
- the method may further comprise steps of removing the first and the second molds from respectively the electrically conductive porous network (2) and the electrically conductive support structure (3).
- the second mold may be removed before the first mold is removed. This is advantageous as it avoids the removal of some parts of the network (2) together with the second mold.
- the second mold may be removed before delamination of the conductive network (2) from the substrate (e.g., Si substrate).
- removing the second mold may comprise exposing the second mold to a suitable solvent which dissolves the second mold specifically with respect to the first mold, the network (2), and the support structure (3) (e.g., acetone for an anodized Al/Cu alloy first mold, a wax second mold, a Ni support structure (3) and a Ni network (2)).
- a suitable solvent which dissolves the second mold specifically with respect to the first mold, the network (2), and the support structure (3) (e.g., acetone for an anodized Al/Cu alloy first mold, a wax second mold, a Ni support structure (3) and a Ni network (2)).
- the remaining structure may be rinsed with deionized water.
- At least part of the first mold may be removed selectively with respect to the support structure (3) and the network (2).
- a solution capable to dissolve the first mold selectively with respect to Ni may be used.
- this solution may be a alkali hydroxide solution.
- it is a hydroxide solution having a concentration of from 0.5 mol/l to 2 mol/l. More preferably, the concentration is from 0.8 mol/l to 1.2 mol/l.
- a preferred hydroxide is KOH. Exposure of the first mold to the solution may for instance be from 20 minutes to 180 minutes, preferably from 40 minutes to 120 minutes, more preferably from 50 minutes to 90 minutes.
- step c1 involved the formation of a copper layer at the bottom of the first mold
- this layer may ultimately be removed with a solution comprising an organic acid (e.g., acetic acid), H 2 O 2 , and water or a solution of ammonium or potassium persulfate. Typically, 1 to 20 minutes is enough.
- the resulting porous electrode (1) can be cleaned by immersion in deionized water. In embodiments, it can then be dried at a temperature between 30 and 100 °C.
- Fig. 3 depicts an example of a fabrication scheme according to an embodiment of the present invention.
- an assembly comprising a Si substrate, a TiN layer on the Si substrate, and an Al/Cu alloy layer on the TiN layer.
- the first mold (6) is formed by exposing the Al/Cu alloy (0.4-0.5wt.% Cu doped Al) layer to a 30°C 0.3M oxalic acid solution under mechanical stirring at 1800 rpm and by applying a 40 V voltage through the solution. This voltage is maintained until 200s after that the current starts to drop, resulting in the overanodization of the alloy layer.
- This step results in the formation of a first mold (6) comprising a network (2) of interconnected channels, the first mold (6) being suitable for molding an electrically conductive network (2) as described in any embodiment of the first aspect.
- the TiN layer has been transformed into a TiO 2 layer.
- This TiO 2 layer was then removed by exposing the layer to a solution comprising NH 4 OH, H 2 O 2 , and H 2 O for 3.5 minutes. The resulting structure is then rinsed five times with demineralized water before to perform the next step.
- step c was performed.
- a Cu layer was formed at the bottom of the first mold (6).
- a 30°C solution comprising 0.5 mol/l of CuSO 4 x5H 2 O and 1 mol/l sodium citrate was used.
- -10mA/cm 2 was applied to the solution for 50 s, thereby forming a 500 nm Cu layer at the bottom of the first mold (6).
- An alternative version of this Cu layer formation step can be performed by using a more dilute Cu solution.
- a solution comprising 5mM CuSO 4 and 20mM H 2 SO 4 at an applied potential of -0.6V can be used, thereby forming a more homogenous 70nm thick Cu layer when transferring a total charge of -6.4C.
- a Ni layer was formed on the Cu layer, thereby filling in the rest of the network (2) of interconnected channels.
- a 40 °C solution comprising 0.91 mol/l Ni sulfamate, 0.49M Boric acid, 0.04 mol/l NiCl 2 x6H 2 O, 2,5 ml/l of the additive Nikal PC-8, and 2 ml/l of a wetting agent was prepared and a -5 mA/cm 2 current was applied thereto until the network (2) of interconnected channels was entirely filled. Caution was used in order not to overfill the channels. This way, the formation of a Ni overlayer on and above the network (2) of interconnected channels was avoided. This step took from 30 to 40 minutes for a freshly prepared solution.
- step b was performed by forming a second mold (7) on top of the first mold (6) (and, hence, on top of the electroconductive network (2)), the second mold (7) being suitable for molding an electrically conductive support structure (3) as described in any embodiment of the first aspect.
- the second mold (7) was made of wax and was inkjet-printed on the first mold (6). Since the first mold (6) was previously filled with the conductive network (2), printing the second mold (7) could be performed on a relatively flat surface and no or little wax penetrated the first mold (6).
- the second mold (7) had a length of 55 mm.
- the pixel size for the inkjet printing was chosen to be 31.25 ⁇ m.
- the second mold (7) pattern was a set of hexagonoid shapes having a length of 250 ⁇ m and a pitch of 345 ⁇ m. This pattern comprised 85,5% open area.
- the wax was first heated to 110°C while the Ni-filled first mold (6) was maintained at room temperature. The printing time was ⁇ 60 seconds.
- step d was performed by exposing the second mold (7) to a 40°C solution comprising 0.91 mol/l Ni sulfamate, 0.49 mol/l boric acid, 0.04 mol/l NiCl 2 *6H 2 O, 2.5 ml/l Nickal PC-8, and 2 ml/l wetting agent NW.
- This solution was left in contact with the second mold (7) for 5 minutes before applying a first current therethrough. This 5 min period enables the etching of oxide at the top of the first mold (6).
- Ni support structure (3) was 5 ⁇ m think.
- the second mold (7) was removed before removing the first mold (6) and before delamination of the conductive network (2) from the Si substrate. This was performed in order to avoid the removal of some parts of the Ni network (2) together with the second mold (7).
- the structure obtained in step d was exposed at room temperature for 5 minutes to fresh acetone, rinsed with water, then exposed 5 minutes to fresh acetone again.
- the resulting structure was rinsed ten times in deionized water.
- the bottom Cu layer appearing as a red shining layer, was removed by etching by immersion the conductive network (2) in a Cu etching solution comprising acetic acid, H 2 O 2 , and H 2 O for 3 minutes.
- the resulting porous electrode (1) came off the support wafer and was cleaned by immersion in deionized water, followed by drying at 80°C.
- the present invention relates to an electrochemical device.
- the electrochemical device comprises a porous electrode (1) according to any embodiment of the first aspect.
- the electrochemical device is selected from an electrolyzer, a fuel cell, and a battery (e.g., a redox flow battery).
- electrolyzers are those generating H 2 and O 2 from water, generating organic compounds from CO 2 reduction, generating ammonia from N 2 reduction, and generating water from O 2 reduction.
- the electrolyzer of the present invention may comprise two porous electrodes (1) according to the present invention, each electrode (1) contacting a different side of a membrane (4).
- the electrolyzer may comprise an anode and a cathode, both according to an embodiment of the first aspect.
- the membrane (4) may be an anion or cation exchange membrane (4).
- Fig. 2 shows an electrolyzer comprising two porous electrodes (1) according to the first aspect of the present invention. More in particular, an alkaline electrolyzer is depicted comprising two porous electrodes (1) according to the first aspect separated by a membrane (4).
- the networks (2) of both elctrodes face toward each other while the supports (3) of both electrodes (1) face away from each other.
- the porous electrode (1) depicted on the left of the electrolyzer acts as a cathode where the reduction of water occurs to produce H 2 and 2 OH - .
- an inlet is depicted for an electrolyte to enter the device.
- the OH- produced at the cathode cross the membrane (4) and reach the anode comprising of the porous electrode (1) depicted on the right of the electrolyzer.
- an outlet is depicted where the hydrogen gas generated at the cathode can be collected from the electrolyzer.
- an inlet is depicted where an electrolyte can enter the device.
- an outlet is depicted where the oxygen gas generated by oxidation of the hydroxyl anions at the anode can be collected from the device.
- the network (2) can be penetrated by the electrolyte. This allows the catalytic reaction leading to an ion exchange between cathode and anode electrodes (1) through the separating membrane (4). Additionally, the gaseous products (H 2 and O 2 ) formed inside the network (2) should typically be removed from the nanostructure through the open front side. Further, the network (2) should typically withstand mechanical stress caused by the cell assembly, high solution flow rate, gas bubble formation, and eventually applied pressures in the electrolyzer. This is ensured by the electrically conductive support structure (3).
- the catalytic efficiency of electrolyzers such as the one schematized in Fig. 2 benefits greatly from the high number of exposed active sites provided by the high surface area network (2) of the porous electrode (1) according to the first aspect. This allows for the production of low-cost green hydrogen that can be used as a form of energy storage, for the chemical industry or to generate electricity in a fuel cell. Similarly, in fuel cells, the high number of exposed active sites of the network (2) of the porous electrode (1) is beneficial.
- H-TEC Education's 1-Cell Rebuildable PEM Electrolyzer Kit was adapted and fitted with electrodes (1) according to the first aspect of the present invention or with comparative electrodes.
- the electrolyzer kit comprises a proton exchange membrane and two electrodes. In all configurations, the proton exchange membrane was replaced by an anion exchange membrane (4) Fumasep FAB PK-130 and the electrodes were replaced by one of the following: 1,6 mm thick Ni foam Ni-5763 electrodes from Recemat BV (first comparative configuration, triangles in Fig.
- a meal foam (e.g., a Ni foam) can be present on the support structure (3) of an electrode (1) according to the present invention.
- the metal foam can be between the electrode (1) and a contacting plate of the electrolyzer.
- the porous electrode (1) according to the present invention comprised a 4 ⁇ m thick Ni porous network (2) of interconnected wires and a 5 ⁇ m thick Ni support structure (3). This porous electrode (1) was easy to handle due to the presence of the Ni support structure (3).
- the Ni foam Ni-5763 electrodes from Recemat BV had a porosity of 96%.
- the 5 ⁇ m thick support structure (3) had openings (5) representing 15% of the top and bottom surface area.
- the anion exchange membrane (4) was first soaked 24h in 1M KOH.
- the devices were used to generate hydrogen and oxygen from de-ionized water with the aid of a power supply.
- the electrolyte was at 20.3°C
- the flow rate was at 5ml/min
- the electrode area was 16 cm 2
- each potential was applied for 5 min with the anode as a working electrode
- the cathode as a counter electrode.
- an impedance measurement was done after 3 min to determine the ohmic resistance for the iR correction.
- Fig. 4 shows schematically the three configurations (top) and the corresponding current-voltage curves (bottom). As can be readily seen in these curves, the configuration according to the present invention enables higher current densities at much lower overpotentials than in the comparative configurations.
- the gas diffusion electrodes as an electrochemical device of the present invention may be an electrocatalytic system for CO 2 , N 2 or O 2 reduction from the gas phase.
- An example of a battery according to the third aspect is a redox flow battery.
- the use of porous electrodes (1) according to the first aspect enable the electrolyte flow between anode and cathode.
- the battery according to the present invention may comprise an anode and a cathode, both according to any embodiment of the first aspect of the present invention.
- the battery may be a redox flow battery comprising an anode and a cathode, both according to any one of
- Typical fuel cells according to the present invention involve H 2 oxidation and O 2 reduction.
- the fuel cell may comprise an anode and a cathode, both according to any embodiment of the first aspect of the present invention.
- the present invention relates to the use of an electrode according to any embodiment of the first aspect as a filter.
- the surface of the support structure, facing away from the network has openings (5) representing from 2 to 50%.
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EP21175811.5A EP4095287A1 (fr) | 2021-05-25 | 2021-05-25 | Électrode poreuse |
US18/559,034 US20240234746A1 (en) | 2021-05-25 | 2022-05-23 | Porous Electrode |
PCT/EP2022/063929 WO2022248416A1 (fr) | 2021-05-25 | 2022-05-23 | Électrode poreuse |
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EP0867048A1 (fr) * | 1995-11-28 | 1998-09-30 | Hoechst Research & Technology Deutschland GmbH & Co. KG | Electrode de diffusion gazeuse pour piles a combustible avec membrane en electrolite polymerique |
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WO2020200416A1 (fr) * | 2019-04-01 | 2020-10-08 | Toyota Motor Europe | Nanomaillage ordonné 3d pour batterie métal-air |
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2021
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2022
- 2022-05-23 US US18/559,034 patent/US20240234746A1/en active Pending
- 2022-05-23 WO PCT/EP2022/063929 patent/WO2022248416A1/fr active Application Filing
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EP0867048A1 (fr) * | 1995-11-28 | 1998-09-30 | Hoechst Research & Technology Deutschland GmbH & Co. KG | Electrode de diffusion gazeuse pour piles a combustible avec membrane en electrolite polymerique |
US20110165462A1 (en) * | 2010-01-07 | 2011-07-07 | Aruna Zhamu | Anode compositions for lithium secondary batteries |
WO2020200416A1 (fr) * | 2019-04-01 | 2020-10-08 | Toyota Motor Europe | Nanomaillage ordonné 3d pour batterie métal-air |
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