EP1973177A3 - Film ferroélectrique, son procédé de production, dispositif ferroélectrique et dispositif de décharge de liquide - Google Patents
Film ferroélectrique, son procédé de production, dispositif ferroélectrique et dispositif de décharge de liquide Download PDFInfo
- Publication number
- EP1973177A3 EP1973177A3 EP08005206A EP08005206A EP1973177A3 EP 1973177 A3 EP1973177 A3 EP 1973177A3 EP 08005206 A EP08005206 A EP 08005206A EP 08005206 A EP08005206 A EP 08005206A EP 1973177 A3 EP1973177 A3 EP 1973177A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- ferroelectric
- producing
- same
- liquid discharge
- ferroelectric film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007788 liquid Substances 0.000 title 1
- 239000010936 titanium Substances 0.000 abstract 4
- 239000010955 niobium Substances 0.000 abstract 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 abstract 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1607—Production of print heads with piezoelectric elements
- B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
- C04B35/49—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates
- C04B35/491—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT
- C04B35/493—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates containing also titanium oxides or titanates based on lead zirconates and lead titanates, e.g. PZT containing also other lead compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/088—Oxides of the type ABO3 with A representing alkali, alkaline earth metal or Pb and B representing a refractory or rare earth metal
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/03—Specific materials used
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2202/00—Embodiments of or processes related to ink-jet or thermal heads
- B41J2202/01—Embodiments of or processes related to ink-jet heads
- B41J2202/21—Line printing
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/76—Crystal structural characteristics, e.g. symmetry
- C04B2235/767—Hexagonal symmetry, e.g. beta-Si3N4, beta-Sialon, alpha-SiC or hexa-ferrites
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Composite Materials (AREA)
- Structural Engineering (AREA)
- Semiconductor Memories (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Inorganic Insulating Materials (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007074026 | 2007-03-22 | ||
JP2007229788A JP2008266771A (ja) | 2007-03-22 | 2007-09-05 | 強誘電体膜とその製造方法、強誘電体素子、及び液体吐出装置 |
JP2007229789A JP4808689B2 (ja) | 2007-03-22 | 2007-09-05 | 強誘電体膜とその製造方法、強誘電体素子、及び液体吐出装置 |
JP2007229786A JP5367242B2 (ja) | 2007-03-22 | 2007-09-05 | 強誘電体膜とその製造方法、強誘電体素子、及び液体吐出装置 |
JP2007229787A JP2008266770A (ja) | 2007-03-22 | 2007-09-05 | 強誘電体膜とその製造方法、強誘電体素子、及び液体吐出装置 |
Publications (4)
Publication Number | Publication Date |
---|---|
EP1973177A2 EP1973177A2 (fr) | 2008-09-24 |
EP1973177A3 true EP1973177A3 (fr) | 2012-07-04 |
EP1973177B1 EP1973177B1 (fr) | 2014-10-01 |
EP1973177B8 EP1973177B8 (fr) | 2015-01-21 |
Family
ID=39774253
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP08005206.1A Active EP1973177B8 (fr) | 2007-03-22 | 2008-03-19 | Film ferroélectrique, son procédé de production, dispositif ferroélectrique et dispositif de décharge de liquide |
Country Status (2)
Country | Link |
---|---|
US (1) | US8100513B2 (fr) |
EP (1) | EP1973177B8 (fr) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4993294B2 (ja) * | 2007-09-05 | 2012-08-08 | 富士フイルム株式会社 | ペロブスカイト型酸化物、強誘電体膜とその製造方法、強誘電体素子、及び液体吐出装置 |
JP4505492B2 (ja) * | 2007-11-06 | 2010-07-21 | 富士フイルム株式会社 | ペロブスカイト型酸化物、強誘電体膜、強誘電体素子、及び液体吐出装置 |
JP5290610B2 (ja) * | 2008-04-09 | 2013-09-18 | 富士フイルム株式会社 | 圧電膜の成膜方法 |
JP4438892B1 (ja) * | 2009-02-03 | 2010-03-24 | 富士フイルム株式会社 | 圧電体とその製造方法、圧電素子、及び液体吐出装置 |
JP4438893B1 (ja) * | 2009-02-04 | 2010-03-24 | 富士フイルム株式会社 | 圧電体とその製造方法、圧電素子、及び液体吐出装置 |
JP5592104B2 (ja) * | 2009-02-17 | 2014-09-17 | 富士フイルム株式会社 | 圧電体膜並びにそれを備えた圧電素子及び液体吐出装置 |
US8557088B2 (en) * | 2009-02-19 | 2013-10-15 | Fujifilm Corporation | Physical vapor deposition with phase shift |
US8540851B2 (en) * | 2009-02-19 | 2013-09-24 | Fujifilm Corporation | Physical vapor deposition with impedance matching network |
US8164234B2 (en) | 2009-02-26 | 2012-04-24 | Fujifilm Corporation | Sputtered piezoelectric material |
JP5506031B2 (ja) * | 2009-12-28 | 2014-05-28 | 富士フイルム株式会社 | アクチュエータ素子の駆動方法、及びデバイス検査方法 |
JP5555072B2 (ja) | 2010-06-25 | 2014-07-23 | 富士フイルム株式会社 | 圧電体膜、圧電素子および液体吐出装置 |
WO2012133529A1 (fr) * | 2011-03-30 | 2012-10-04 | 日本碍子株式会社 | Procédé de fabrication d'un substrat piézoélectrique |
JP6036460B2 (ja) * | 2013-03-26 | 2016-11-30 | 三菱マテリアル株式会社 | PNbZT強誘電体薄膜の形成方法 |
US10369787B2 (en) | 2015-05-25 | 2019-08-06 | Konica Minolta, Inc. | Piezoelectric thin film, piezoelectric actuator, inkjet head, inkjet printer, and method for manufacturing piezoelectric actuator |
JP6661771B2 (ja) | 2016-07-28 | 2020-03-11 | 富士フイルム株式会社 | 圧電体膜、圧電素子および圧電体膜の製造方法 |
CN109983592B (zh) | 2016-12-12 | 2023-05-12 | 松下知识产权经营株式会社 | 压电功能膜、致动器以及喷墨头 |
US10615330B1 (en) | 2017-02-16 | 2020-04-07 | Panasonic Intellectual Property Management Co., Ltd. | Piezoelectric element, actuator, and liquid droplet ejection head |
KR20210138997A (ko) * | 2020-05-13 | 2021-11-22 | 삼성전자주식회사 | 커패시터, 커패시터 제어 방법, 및 이를 포함하는 트랜지스터 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1557481A2 (fr) * | 2004-01-20 | 2005-07-27 | Seiko Epson Corporation | Couche ferroélectrique, mémoire ferroélectrique et élément piézoélectrique |
EP1760768A1 (fr) * | 2005-08-30 | 2007-03-07 | Seiko Epson Corporation | Matériau isolant pour cible de pulvérisation, procédé de fabrication de celui-ci, une couche d'oxyde complexe et dispositif |
EP1905866A1 (fr) * | 2006-09-28 | 2008-04-02 | Fujifilm Corporation | Processus de formation d'un film, film piézoélectrique, dispositif piézoélectrique, et appareil de décharge de liquide |
EP1905867A1 (fr) * | 2006-09-28 | 2008-04-02 | Fujifilm Corporation | Procédé de formation d'un film, film piézoélectrique, et dispositif piézoélectrique |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07330425A (ja) | 1994-06-01 | 1995-12-19 | Ngk Spark Plug Co Ltd | 圧電フィルタ用磁器組成物 |
DE69510284T2 (de) * | 1994-08-25 | 1999-10-14 | Seiko Epson Corp. | Flüssigkeitsstrahlkopf |
JP3970588B2 (ja) * | 2000-12-28 | 2007-09-05 | 株式会社日本自動車部品総合研究所 | 低温焼成化誘電体セラミックス、積層型誘電体素子、誘電体セラミックスの製造方法および助剤酸化物 |
JP4752156B2 (ja) | 2001-08-23 | 2011-08-17 | 株式会社村田製作所 | 積層圧電素子用圧電磁器組成物、積層圧電素子、積層圧電素子の製造方法および積層圧電装置 |
JP2005101512A (ja) | 2002-10-24 | 2005-04-14 | Seiko Epson Corp | 強誘電体膜、強誘電体メモリ、圧電素子、半導体素子、液体噴射ヘッド、プリンタ及び強誘電体膜の製造方法 |
JP3791614B2 (ja) | 2002-10-24 | 2006-06-28 | セイコーエプソン株式会社 | 強誘電体膜、強誘電体メモリ装置、圧電素子、半導体素子、圧電アクチュエータ、液体噴射ヘッド及びプリンタ |
JP4572361B2 (ja) * | 2003-03-28 | 2010-11-04 | セイコーエプソン株式会社 | 強誘電体膜の製造方法、強誘電体キャパシタおよびその製造方法、強誘電体メモリならびに圧電素子 |
JP2005035843A (ja) | 2003-07-15 | 2005-02-10 | Taiheiyo Cement Corp | 圧電セラミックスおよび焼結助剤ならびに積層型圧電素子 |
JP4479193B2 (ja) | 2003-08-27 | 2010-06-09 | セイコーエプソン株式会社 | 半導体装置 |
JP2005150694A (ja) * | 2003-10-23 | 2005-06-09 | Seiko Epson Corp | 圧電体膜、圧電素子、圧電アクチュエーター、圧電ポンプ、インクジェット式記録ヘッド、インクジェットプリンター、表面弾性波素子、薄膜圧電共振子、周波数フィルタ、発振器、電子回路、および電子機器 |
JP4811556B2 (ja) | 2004-04-23 | 2011-11-09 | セイコーエプソン株式会社 | 圧電素子、液体噴射ヘッドおよび液体噴射装置 |
-
2008
- 2008-03-19 EP EP08005206.1A patent/EP1973177B8/fr active Active
- 2008-03-20 US US12/052,547 patent/US8100513B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1557481A2 (fr) * | 2004-01-20 | 2005-07-27 | Seiko Epson Corporation | Couche ferroélectrique, mémoire ferroélectrique et élément piézoélectrique |
EP1760768A1 (fr) * | 2005-08-30 | 2007-03-07 | Seiko Epson Corporation | Matériau isolant pour cible de pulvérisation, procédé de fabrication de celui-ci, une couche d'oxyde complexe et dispositif |
EP1905866A1 (fr) * | 2006-09-28 | 2008-04-02 | Fujifilm Corporation | Processus de formation d'un film, film piézoélectrique, dispositif piézoélectrique, et appareil de décharge de liquide |
EP1905867A1 (fr) * | 2006-09-28 | 2008-04-02 | Fujifilm Corporation | Procédé de formation d'un film, film piézoélectrique, et dispositif piézoélectrique |
Non-Patent Citations (1)
Title |
---|
LEE K B ET AL: "Preparation and ferroelectric properties of Bi-modified lead zirconate titanate thin film", JOURNAL OF MATERIALS SCIENCE, vol. 33, no. 23, 1 December 1998 (1998-12-01), pages 5707 - 5711, XP019209294, ISSN: 1573-4803 * |
Also Published As
Publication number | Publication date |
---|---|
US20080231667A1 (en) | 2008-09-25 |
US8100513B2 (en) | 2012-01-24 |
EP1973177B8 (fr) | 2015-01-21 |
EP1973177B1 (fr) | 2014-10-01 |
EP1973177A2 (fr) | 2008-09-24 |
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