EP1276139A3 - Condensateur et son procédé de fabrication - Google Patents
Condensateur et son procédé de fabrication Download PDFInfo
- Publication number
- EP1276139A3 EP1276139A3 EP02252532A EP02252532A EP1276139A3 EP 1276139 A3 EP1276139 A3 EP 1276139A3 EP 02252532 A EP02252532 A EP 02252532A EP 02252532 A EP02252532 A EP 02252532A EP 1276139 A3 EP1276139 A3 EP 1276139A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- capacitor
- metal
- conductive layer
- manufacturing
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 5
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP07114564.3A EP1852893B1 (fr) | 2001-07-13 | 2002-04-09 | Condensateur et son procédé de fabrication |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001213547 | 2001-07-13 | ||
JP2001213547 | 2001-07-13 | ||
JP2002016083A JP4428500B2 (ja) | 2001-07-13 | 2002-01-24 | 容量素子及びその製造方法 |
JP2002016083 | 2002-01-24 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP07114564.3A Division EP1852893B1 (fr) | 2001-07-13 | 2002-04-09 | Condensateur et son procédé de fabrication |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1276139A2 EP1276139A2 (fr) | 2003-01-15 |
EP1276139A3 true EP1276139A3 (fr) | 2006-06-07 |
EP1276139B1 EP1276139B1 (fr) | 2010-01-20 |
Family
ID=26618688
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP02252532A Expired - Fee Related EP1276139B1 (fr) | 2001-07-13 | 2002-04-09 | Condensateur et son procédé de fabrication |
EP07114564.3A Expired - Fee Related EP1852893B1 (fr) | 2001-07-13 | 2002-04-09 | Condensateur et son procédé de fabrication |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP07114564.3A Expired - Fee Related EP1852893B1 (fr) | 2001-07-13 | 2002-04-09 | Condensateur et son procédé de fabrication |
Country Status (6)
Country | Link |
---|---|
US (2) | US6713808B2 (fr) |
EP (2) | EP1276139B1 (fr) |
JP (1) | JP4428500B2 (fr) |
KR (1) | KR100775721B1 (fr) |
DE (1) | DE60235142D1 (fr) |
TW (1) | TW541691B (fr) |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004039699A (ja) * | 2002-06-28 | 2004-02-05 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP3791614B2 (ja) * | 2002-10-24 | 2006-06-28 | セイコーエプソン株式会社 | 強誘電体膜、強誘電体メモリ装置、圧電素子、半導体素子、圧電アクチュエータ、液体噴射ヘッド及びプリンタ |
JPWO2004053991A1 (ja) * | 2002-12-10 | 2006-04-13 | 富士通株式会社 | 強誘電体キャパシタ及びその製造方法 |
US7473949B2 (en) | 2002-12-10 | 2009-01-06 | Fujitsu Limited | Ferroelectric capacitor and method of manufacturing the same |
JPWO2004066388A1 (ja) * | 2003-01-17 | 2006-05-18 | 富士通株式会社 | 強誘電体キャパシタおよびその製造方法 |
KR100562499B1 (ko) * | 2003-02-21 | 2006-03-21 | 삼성전자주식회사 | 강유전체 기억 소자 및 그 제조 방법 |
US20040163233A1 (en) * | 2003-02-26 | 2004-08-26 | Stefan Gernhardt | Methods of forming electrical connections within ferroelectric devices |
JP2004303993A (ja) * | 2003-03-31 | 2004-10-28 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置 |
JP4901105B2 (ja) * | 2003-04-15 | 2012-03-21 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP2004349474A (ja) * | 2003-05-22 | 2004-12-09 | Toshiba Corp | 半導体装置とその製造方法 |
WO2004109804A1 (fr) * | 2003-06-06 | 2004-12-16 | Fujitsu Limited | Procede de fabrication de dispositif semi-conducteur |
KR100531462B1 (ko) * | 2003-06-30 | 2005-11-28 | 주식회사 하이닉스반도체 | 엠티피 구조의 캐패시터를 구비하는 강유전체 메모리소자의 제조 방법 |
JP4567314B2 (ja) | 2003-10-24 | 2010-10-20 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
KR101015142B1 (ko) * | 2003-12-29 | 2011-02-16 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 캐패시터 및 그 제조 방법 |
US7892406B2 (en) * | 2005-03-28 | 2011-02-22 | Tokyo Electron Limited | Ionized physical vapor deposition (iPVD) process |
US20090321247A1 (en) * | 2004-03-05 | 2009-12-31 | Tokyo Electron Limited | IONIZED PHYSICAL VAPOR DEPOSITION (iPVD) PROCESS |
JP2006005234A (ja) * | 2004-06-18 | 2006-01-05 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置 |
US7160788B2 (en) * | 2004-08-23 | 2007-01-09 | Micron Technology, Inc. | Methods of forming integrated circuits |
KR100909029B1 (ko) | 2005-03-30 | 2009-07-22 | 후지쯔 마이크로일렉트로닉스 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
KR100732026B1 (ko) | 2005-04-08 | 2007-06-27 | 후지쯔 가부시끼가이샤 | 반도체 장치의 제조 방법 |
KR100725081B1 (ko) * | 2005-06-14 | 2007-06-08 | 후지쯔 가부시끼가이샤 | 반도체 장치의 제조 방법 |
KR100973703B1 (ko) * | 2005-06-17 | 2010-08-04 | 후지쯔 세미컨덕터 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
KR100657966B1 (ko) * | 2005-08-11 | 2006-12-14 | 삼성전자주식회사 | 리셋 전류 안정화를 위한 메모리 소자의 제조 방법 |
KR101025189B1 (ko) * | 2006-03-30 | 2011-03-31 | 후지쯔 세미컨덕터 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
US7588667B2 (en) * | 2006-04-07 | 2009-09-15 | Tokyo Electron Limited | Depositing rhuthenium films using ionized physical vapor deposition (IPVD) |
JP4946287B2 (ja) | 2006-09-11 | 2012-06-06 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP4690985B2 (ja) * | 2006-09-25 | 2011-06-01 | 株式会社東芝 | 不揮発性記憶装置およびその製造方法 |
JP5205741B2 (ja) | 2006-11-14 | 2013-06-05 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
KR100859263B1 (ko) * | 2007-02-22 | 2008-09-18 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 및 그 제조 방법 |
WO2008105100A1 (fr) * | 2007-02-28 | 2008-09-04 | Fujitsu Limited | Dispositif à semi-conducteur et son procédé de fabrication |
JP5092461B2 (ja) * | 2007-03-09 | 2012-12-05 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP2008294228A (ja) * | 2007-05-24 | 2008-12-04 | Oki Electric Ind Co Ltd | 半導体メモリ素子及びその製造方法 |
US7905013B2 (en) * | 2007-06-04 | 2011-03-15 | Sharp Laboratories Of America, Inc. | Method for forming an iridium oxide (IrOx) nanowire neural sensor array |
JP5277657B2 (ja) * | 2008-02-18 | 2013-08-28 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
KR101490429B1 (ko) * | 2008-03-11 | 2015-02-11 | 삼성전자주식회사 | 저항 메모리 소자 및 그 형성 방법 |
US7955926B2 (en) * | 2008-03-26 | 2011-06-07 | International Business Machines Corporation | Structure and method to control oxidation in high-k gate structures |
JP5347381B2 (ja) | 2008-08-28 | 2013-11-20 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP4894843B2 (ja) * | 2008-10-23 | 2012-03-14 | セイコーエプソン株式会社 | 半導体装置及びその製造方法 |
JP5879695B2 (ja) * | 2011-02-24 | 2016-03-08 | セイコーエプソン株式会社 | 焦電型検出器、焦電型検出装置及び電子機器 |
CN102637660A (zh) * | 2012-04-24 | 2012-08-15 | 上海宏力半导体制造有限公司 | 集成无源器件、mim电容、极板及极板的形成方法 |
JP6015159B2 (ja) | 2012-06-22 | 2016-10-26 | Tdk株式会社 | 薄膜コンデンサ |
KR102371350B1 (ko) * | 2015-06-02 | 2022-03-08 | 삼성전자주식회사 | 커패시터를 포함하는 반도체 소자 |
CN110767450B (zh) * | 2018-07-27 | 2022-05-24 | 浙江清华柔性电子技术研究院 | 薄膜电容器 |
DE102020114527B4 (de) * | 2020-05-29 | 2023-11-30 | Infineon Technologies Ag | Chipgehäuse und verfahren zum bilden eines chipgehäuses |
US11832451B1 (en) | 2021-08-06 | 2023-11-28 | Kepler Computing Inc. | High density ferroelectric random access memory (FeRAM) devices and methods of fabrication |
US11942133B2 (en) | 2021-09-02 | 2024-03-26 | Kepler Computing Inc. | Pedestal-based pocket integration process for embedded memory |
US20230067612A1 (en) | 2021-09-02 | 2023-03-02 | Kepler Computing, Inc. | Pocket integration process for embedded memory |
US11961877B1 (en) | 2021-12-14 | 2024-04-16 | Kepler Computing Inc. | Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures |
US11869928B2 (en) | 2021-12-14 | 2024-01-09 | Kepler Computing Inc. | Dual hydrogen barrier layer for memory devices |
KR20240035239A (ko) * | 2022-09-08 | 2024-03-15 | 삼성전자주식회사 | 집적회로 소자 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5191510A (en) * | 1992-04-29 | 1993-03-02 | Ramtron International Corporation | Use of palladium as an adhesion layer and as an electrode in ferroelectric memory devices |
EP0993953A2 (fr) * | 1998-10-14 | 2000-04-19 | Seiko Epson Corporation | Procédé de fabrication d'un substrat comprenant un film mince ferroélectrique, tête d'enregistrement à jet d'encre, imprimante à jet d'encre |
US6146906A (en) * | 1998-09-16 | 2000-11-14 | Nec Corporation | DC magnetron sputtering method for manufacturing electrode of ferroelectric capacitor |
JP2000357777A (ja) * | 1999-06-04 | 2000-12-26 | Internatl Business Mach Corp <Ibm> | 強誘電体キャパシタおよび強誘電体/cmos集積化構造 |
US6169305B1 (en) * | 1998-07-16 | 2001-01-02 | Fujitsu Limited | Semiconductor device and method for fabricating the same |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3197782B2 (ja) * | 1994-04-29 | 2001-08-13 | インターナショナル・ビジネス・マシーンズ・コーポレ−ション | 半導体集積回路コンデンサおよびその電極構造 |
US5566045A (en) * | 1994-08-01 | 1996-10-15 | Texas Instruments, Inc. | High-dielectric-constant material electrodes comprising thin platinum layers |
JP3929513B2 (ja) | 1995-07-07 | 2007-06-13 | ローム株式会社 | 誘電体キャパシタおよびその製造方法 |
KR100215791B1 (ko) * | 1996-01-26 | 1999-08-16 | 구자홍 | 커패시터 구조 |
KR100234361B1 (ko) * | 1996-06-17 | 1999-12-15 | 윤종용 | 강유전체 캐패시터를 구비하는 반도체 메모리장치 및그제조방법 |
US5719417A (en) * | 1996-11-27 | 1998-02-17 | Advanced Technology Materials, Inc. | Ferroelectric integrated circuit structure |
KR100239417B1 (ko) * | 1996-12-03 | 2000-01-15 | 김영환 | 반도체 소자의 커패시터 및 그의 제조방법 |
US6350643B1 (en) * | 1997-12-18 | 2002-02-26 | Advanced Technology Materials, Inc. | Reduced degradation of metal oxide ceramic due to diffusion of a mobile specie therefrom |
US6313539B1 (en) * | 1997-12-24 | 2001-11-06 | Sharp Kabushiki Kaisha | Semiconductor memory device and production method of the same |
KR100343287B1 (ko) * | 1999-09-21 | 2002-07-15 | 윤종용 | 고집적 강유전체 메모리 소자의 형성 방법 |
-
2002
- 2002-01-24 JP JP2002016083A patent/JP4428500B2/ja not_active Expired - Fee Related
- 2002-04-01 TW TW091106534A patent/TW541691B/zh active
- 2002-04-04 US US10/115,208 patent/US6713808B2/en not_active Expired - Lifetime
- 2002-04-09 EP EP02252532A patent/EP1276139B1/fr not_active Expired - Fee Related
- 2002-04-09 DE DE60235142T patent/DE60235142D1/de not_active Expired - Lifetime
- 2002-04-09 EP EP07114564.3A patent/EP1852893B1/fr not_active Expired - Fee Related
- 2002-04-27 KR KR1020020023260A patent/KR100775721B1/ko not_active IP Right Cessation
-
2004
- 2004-01-27 US US10/764,519 patent/US6933156B2/en not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5191510A (en) * | 1992-04-29 | 1993-03-02 | Ramtron International Corporation | Use of palladium as an adhesion layer and as an electrode in ferroelectric memory devices |
US6169305B1 (en) * | 1998-07-16 | 2001-01-02 | Fujitsu Limited | Semiconductor device and method for fabricating the same |
US6146906A (en) * | 1998-09-16 | 2000-11-14 | Nec Corporation | DC magnetron sputtering method for manufacturing electrode of ferroelectric capacitor |
EP0993953A2 (fr) * | 1998-10-14 | 2000-04-19 | Seiko Epson Corporation | Procédé de fabrication d'un substrat comprenant un film mince ferroélectrique, tête d'enregistrement à jet d'encre, imprimante à jet d'encre |
JP2000357777A (ja) * | 1999-06-04 | 2000-12-26 | Internatl Business Mach Corp <Ibm> | 強誘電体キャパシタおよび強誘電体/cmos集積化構造 |
US20020074581A1 (en) * | 1999-06-04 | 2002-06-20 | International Business Machines Corporation | Feram cell with internal oxygen source and method of oxygen release |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 15 6 April 2001 (2001-04-06) * |
Also Published As
Publication number | Publication date |
---|---|
EP1276139B1 (fr) | 2010-01-20 |
US6713808B2 (en) | 2004-03-30 |
TW541691B (en) | 2003-07-11 |
EP1852893A2 (fr) | 2007-11-07 |
EP1852893A3 (fr) | 2014-09-10 |
DE60235142D1 (de) | 2010-03-11 |
KR20030006947A (ko) | 2003-01-23 |
US20040184218A1 (en) | 2004-09-23 |
EP1852893B1 (fr) | 2017-05-24 |
JP2003092391A (ja) | 2003-03-28 |
US6933156B2 (en) | 2005-08-23 |
US20030022454A1 (en) | 2003-01-30 |
KR100775721B1 (ko) | 2007-11-09 |
EP1276139A2 (fr) | 2003-01-15 |
JP4428500B2 (ja) | 2010-03-10 |
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