EP1276139A3 - Condensateur et son procédé de fabrication - Google Patents

Condensateur et son procédé de fabrication Download PDF

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Publication number
EP1276139A3
EP1276139A3 EP02252532A EP02252532A EP1276139A3 EP 1276139 A3 EP1276139 A3 EP 1276139A3 EP 02252532 A EP02252532 A EP 02252532A EP 02252532 A EP02252532 A EP 02252532A EP 1276139 A3 EP1276139 A3 EP 1276139A3
Authority
EP
European Patent Office
Prior art keywords
capacitor
metal
conductive layer
manufacturing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP02252532A
Other languages
German (de)
English (en)
Other versions
EP1276139B1 (fr
EP1276139A2 (fr
Inventor
Wensheng c/o Fujitsu Limited Wang
Mitsushi c/o Fujitsu Limited Fujiki
Ko c/o Fujitsu Limited Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to EP07114564.3A priority Critical patent/EP1852893B1/fr
Publication of EP1276139A2 publication Critical patent/EP1276139A2/fr
Publication of EP1276139A3 publication Critical patent/EP1276139A3/fr
Application granted granted Critical
Publication of EP1276139B1 publication Critical patent/EP1276139B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
EP02252532A 2001-07-13 2002-04-09 Condensateur et son procédé de fabrication Expired - Fee Related EP1276139B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP07114564.3A EP1852893B1 (fr) 2001-07-13 2002-04-09 Condensateur et son procédé de fabrication

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001213547 2001-07-13
JP2001213547 2001-07-13
JP2002016083A JP4428500B2 (ja) 2001-07-13 2002-01-24 容量素子及びその製造方法
JP2002016083 2002-01-24

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP07114564.3A Division EP1852893B1 (fr) 2001-07-13 2002-04-09 Condensateur et son procédé de fabrication

Publications (3)

Publication Number Publication Date
EP1276139A2 EP1276139A2 (fr) 2003-01-15
EP1276139A3 true EP1276139A3 (fr) 2006-06-07
EP1276139B1 EP1276139B1 (fr) 2010-01-20

Family

ID=26618688

Family Applications (2)

Application Number Title Priority Date Filing Date
EP02252532A Expired - Fee Related EP1276139B1 (fr) 2001-07-13 2002-04-09 Condensateur et son procédé de fabrication
EP07114564.3A Expired - Fee Related EP1852893B1 (fr) 2001-07-13 2002-04-09 Condensateur et son procédé de fabrication

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP07114564.3A Expired - Fee Related EP1852893B1 (fr) 2001-07-13 2002-04-09 Condensateur et son procédé de fabrication

Country Status (6)

Country Link
US (2) US6713808B2 (fr)
EP (2) EP1276139B1 (fr)
JP (1) JP4428500B2 (fr)
KR (1) KR100775721B1 (fr)
DE (1) DE60235142D1 (fr)
TW (1) TW541691B (fr)

Families Citing this family (50)

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JP2004039699A (ja) * 2002-06-28 2004-02-05 Fujitsu Ltd 半導体装置及びその製造方法
JP3791614B2 (ja) * 2002-10-24 2006-06-28 セイコーエプソン株式会社 強誘電体膜、強誘電体メモリ装置、圧電素子、半導体素子、圧電アクチュエータ、液体噴射ヘッド及びプリンタ
JPWO2004053991A1 (ja) * 2002-12-10 2006-04-13 富士通株式会社 強誘電体キャパシタ及びその製造方法
US7473949B2 (en) 2002-12-10 2009-01-06 Fujitsu Limited Ferroelectric capacitor and method of manufacturing the same
JPWO2004066388A1 (ja) * 2003-01-17 2006-05-18 富士通株式会社 強誘電体キャパシタおよびその製造方法
KR100562499B1 (ko) * 2003-02-21 2006-03-21 삼성전자주식회사 강유전체 기억 소자 및 그 제조 방법
US20040163233A1 (en) * 2003-02-26 2004-08-26 Stefan Gernhardt Methods of forming electrical connections within ferroelectric devices
JP2004303993A (ja) * 2003-03-31 2004-10-28 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
JP4901105B2 (ja) * 2003-04-15 2012-03-21 富士通セミコンダクター株式会社 半導体装置の製造方法
JP2004349474A (ja) * 2003-05-22 2004-12-09 Toshiba Corp 半導体装置とその製造方法
WO2004109804A1 (fr) * 2003-06-06 2004-12-16 Fujitsu Limited Procede de fabrication de dispositif semi-conducteur
KR100531462B1 (ko) * 2003-06-30 2005-11-28 주식회사 하이닉스반도체 엠티피 구조의 캐패시터를 구비하는 강유전체 메모리소자의 제조 방법
JP4567314B2 (ja) 2003-10-24 2010-10-20 富士通セミコンダクター株式会社 半導体装置及びその製造方法
KR101015142B1 (ko) * 2003-12-29 2011-02-16 주식회사 하이닉스반도체 반도체 메모리 소자의 캐패시터 및 그 제조 방법
US7892406B2 (en) * 2005-03-28 2011-02-22 Tokyo Electron Limited Ionized physical vapor deposition (iPVD) process
US20090321247A1 (en) * 2004-03-05 2009-12-31 Tokyo Electron Limited IONIZED PHYSICAL VAPOR DEPOSITION (iPVD) PROCESS
JP2006005234A (ja) * 2004-06-18 2006-01-05 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
US7160788B2 (en) * 2004-08-23 2007-01-09 Micron Technology, Inc. Methods of forming integrated circuits
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KR100732026B1 (ko) 2005-04-08 2007-06-27 후지쯔 가부시끼가이샤 반도체 장치의 제조 방법
KR100725081B1 (ko) * 2005-06-14 2007-06-08 후지쯔 가부시끼가이샤 반도체 장치의 제조 방법
KR100973703B1 (ko) * 2005-06-17 2010-08-04 후지쯔 세미컨덕터 가부시키가이샤 반도체 장치 및 그 제조 방법
KR100657966B1 (ko) * 2005-08-11 2006-12-14 삼성전자주식회사 리셋 전류 안정화를 위한 메모리 소자의 제조 방법
KR101025189B1 (ko) * 2006-03-30 2011-03-31 후지쯔 세미컨덕터 가부시키가이샤 반도체 장치 및 그 제조 방법
US7588667B2 (en) * 2006-04-07 2009-09-15 Tokyo Electron Limited Depositing rhuthenium films using ionized physical vapor deposition (IPVD)
JP4946287B2 (ja) 2006-09-11 2012-06-06 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP4690985B2 (ja) * 2006-09-25 2011-06-01 株式会社東芝 不揮発性記憶装置およびその製造方法
JP5205741B2 (ja) 2006-11-14 2013-06-05 富士通セミコンダクター株式会社 半導体装置の製造方法
KR100859263B1 (ko) * 2007-02-22 2008-09-18 주식회사 하이닉스반도체 반도체 소자의 캐패시터 및 그 제조 방법
WO2008105100A1 (fr) * 2007-02-28 2008-09-04 Fujitsu Limited Dispositif à semi-conducteur et son procédé de fabrication
JP5092461B2 (ja) * 2007-03-09 2012-12-05 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP2008294228A (ja) * 2007-05-24 2008-12-04 Oki Electric Ind Co Ltd 半導体メモリ素子及びその製造方法
US7905013B2 (en) * 2007-06-04 2011-03-15 Sharp Laboratories Of America, Inc. Method for forming an iridium oxide (IrOx) nanowire neural sensor array
JP5277657B2 (ja) * 2008-02-18 2013-08-28 富士通セミコンダクター株式会社 半導体装置及びその製造方法
KR101490429B1 (ko) * 2008-03-11 2015-02-11 삼성전자주식회사 저항 메모리 소자 및 그 형성 방법
US7955926B2 (en) * 2008-03-26 2011-06-07 International Business Machines Corporation Structure and method to control oxidation in high-k gate structures
JP5347381B2 (ja) 2008-08-28 2013-11-20 富士通セミコンダクター株式会社 半導体装置の製造方法
JP4894843B2 (ja) * 2008-10-23 2012-03-14 セイコーエプソン株式会社 半導体装置及びその製造方法
JP5879695B2 (ja) * 2011-02-24 2016-03-08 セイコーエプソン株式会社 焦電型検出器、焦電型検出装置及び電子機器
CN102637660A (zh) * 2012-04-24 2012-08-15 上海宏力半导体制造有限公司 集成无源器件、mim电容、极板及极板的形成方法
JP6015159B2 (ja) 2012-06-22 2016-10-26 Tdk株式会社 薄膜コンデンサ
KR102371350B1 (ko) * 2015-06-02 2022-03-08 삼성전자주식회사 커패시터를 포함하는 반도체 소자
CN110767450B (zh) * 2018-07-27 2022-05-24 浙江清华柔性电子技术研究院 薄膜电容器
DE102020114527B4 (de) * 2020-05-29 2023-11-30 Infineon Technologies Ag Chipgehäuse und verfahren zum bilden eines chipgehäuses
US11832451B1 (en) 2021-08-06 2023-11-28 Kepler Computing Inc. High density ferroelectric random access memory (FeRAM) devices and methods of fabrication
US11942133B2 (en) 2021-09-02 2024-03-26 Kepler Computing Inc. Pedestal-based pocket integration process for embedded memory
US20230067612A1 (en) 2021-09-02 2023-03-02 Kepler Computing, Inc. Pocket integration process for embedded memory
US11961877B1 (en) 2021-12-14 2024-04-16 Kepler Computing Inc. Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures
US11869928B2 (en) 2021-12-14 2024-01-09 Kepler Computing Inc. Dual hydrogen barrier layer for memory devices
KR20240035239A (ko) * 2022-09-08 2024-03-15 삼성전자주식회사 집적회로 소자

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Publication number Priority date Publication date Assignee Title
US5191510A (en) * 1992-04-29 1993-03-02 Ramtron International Corporation Use of palladium as an adhesion layer and as an electrode in ferroelectric memory devices
EP0993953A2 (fr) * 1998-10-14 2000-04-19 Seiko Epson Corporation Procédé de fabrication d'un substrat comprenant un film mince ferroélectrique, tête d'enregistrement à jet d'encre, imprimante à jet d'encre
US6146906A (en) * 1998-09-16 2000-11-14 Nec Corporation DC magnetron sputtering method for manufacturing electrode of ferroelectric capacitor
JP2000357777A (ja) * 1999-06-04 2000-12-26 Internatl Business Mach Corp <Ibm> 強誘電体キャパシタおよび強誘電体／ｃｍｏｓ集積化構造
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US5191510A (en) * 1992-04-29 1993-03-02 Ramtron International Corporation Use of palladium as an adhesion layer and as an electrode in ferroelectric memory devices
US6169305B1 (en) * 1998-07-16 2001-01-02 Fujitsu Limited Semiconductor device and method for fabricating the same
US6146906A (en) * 1998-09-16 2000-11-14 Nec Corporation DC magnetron sputtering method for manufacturing electrode of ferroelectric capacitor
EP0993953A2 (fr) * 1998-10-14 2000-04-19 Seiko Epson Corporation Procédé de fabrication d'un substrat comprenant un film mince ferroélectrique, tête d'enregistrement à jet d'encre, imprimante à jet d'encre
JP2000357777A (ja) * 1999-06-04 2000-12-26 Internatl Business Mach Corp <Ibm> 強誘電体キャパシタおよび強誘電体／ｃｍｏｓ集積化構造
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Title
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Also Published As

Publication number Publication date
EP1276139B1 (fr) 2010-01-20
US6713808B2 (en) 2004-03-30
TW541691B (en) 2003-07-11
EP1852893A2 (fr) 2007-11-07
EP1852893A3 (fr) 2014-09-10
DE60235142D1 (de) 2010-03-11
KR20030006947A (ko) 2003-01-23
US20040184218A1 (en) 2004-09-23
EP1852893B1 (fr) 2017-05-24
JP2003092391A (ja) 2003-03-28
US6933156B2 (en) 2005-08-23
US20030022454A1 (en) 2003-01-30
KR100775721B1 (ko) 2007-11-09
EP1276139A2 (fr) 2003-01-15
JP4428500B2 (ja) 2010-03-10

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