EP1224497A4 - Lentille optique pour microlithographie vuv a cristaux de fluorure qui minimise l'effet birefringent, et paraisons optiques de celle-ci - Google Patents

Lentille optique pour microlithographie vuv a cristaux de fluorure qui minimise l'effet birefringent, et paraisons optiques de celle-ci

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Publication number
EP1224497A4
EP1224497A4 EP00943048A EP00943048A EP1224497A4 EP 1224497 A4 EP1224497 A4 EP 1224497A4 EP 00943048 A EP00943048 A EP 00943048A EP 00943048 A EP00943048 A EP 00943048A EP 1224497 A4 EP1224497 A4 EP 1224497A4
Authority
EP
European Patent Office
Prior art keywords
lens
optical
fluoride crystal
blank
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00943048A
Other languages
German (de)
English (en)
Other versions
EP1224497A1 (fr
Inventor
Gautam Meda
Michael Price
Michael Rivera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Inc
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Inc filed Critical Corning Inc
Priority to EP20030078941 priority Critical patent/EP1418447A1/fr
Publication of EP1224497A1 publication Critical patent/EP1224497A1/fr
Publication of EP1224497A4 publication Critical patent/EP1224497A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/08—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of polarising materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
    • G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G03F7/70966—Birefringence

Definitions

  • the present invention relates generally to optical lithography elements and blanks, and particularly to optical microlithography crystal lens elements and optical element blanks for use in optical photolithography systems utilizing vacuum ultraviolet light (VUV) wavelengths below 200 nm, preferably below 193 nm, preferably below 175nm, more preferably below 164 nm, such as VUV projection lithography systems utilizing wavelengths in the 157 nm region.
  • VUV vacuum ultraviolet light
  • Projection optical photolithography systems that utilize the vacuum ultraviolet wavelengths of light below 200 nm provide benefits in terms of achieving smaller feature dimensions. Such systems that utilize vacuum ultraviolet wavelengths in the 157 nm wavelength region have the potential of improving integrated circuits with smaller feature sizes.
  • Current optical lithography systems used by the semiconductor industry in the manufacture of integrated circuits have progressed towards shorter wavelengths of light, such as the popular 248 nm wavelengths, but the commercial use and adoption of vacuum ultraviolet wavelengths below 200 nm, such as 193 and 157 nm has been hindered by the transmission nature of such vacuum ultraviolet wavelengths in these VUV excimer laser regions through optical materials.
  • Patent 6,061,174 of the Nikon Corporation describes a lithography image focusing optical system for ultraviolet lasers with shorter than 300nm wavelengths which utilizes image focusing calcium fluoride crystal optical members with low sodium concentrations.
  • Such systems have utilized calcium fluoride crystal lens elements with uniform ⁇ 111> crystallographic orientation direction as shown in FIG. 4 herein.
  • the prior art has not addressed the adaption of the fluoride crystal element to the lithography light beam it is manipulating.
  • the present invention overcomes problems in the prior art and provides beneficial lithography elements with beneficial optical properties and lithography characteristics including minimal birefringence and blanks therefor that can be used to improve the lithographic manufacturing of integrated circuits with VUV wavelengths.
  • An embodiment of the invention comprises a birefringence minimizing fluoride crystal VUV optical lithography lens.
  • the lens is preferably comprised of a single fluoride crystal.
  • the fluoride crystal lens has an optical center axis encompassed by a fluoride crystal lens perimeter with the lens having a variation in crystallographic orientation direction which tilts away from an optical center axis ⁇ 111> direction orientation and towards the perimeter.
  • the invention includes a fluoride crystal optical lens.
  • the fluoride crystal optical lens is comprised of a single fluoride crystal having a first optical lens surface and a second optical lens surface which opposes the first lens surface.
  • the fluoride crystal has a progressive concentration of crystal dislocation defects that increases from the first optical lens surface to the second optical lens surface.
  • a further embodiment of the invention includes a calcium fluoride crystal optical element for manipulating a transmitting wavelength ⁇ ⁇ 200 nm.
  • the calcium fluoride crystal optical element comprises a calcium fluoride crystal having a first optical surface and a second optical surface for manipulating the wavelength ⁇ light.
  • the calcium fluoride crystal has a concentration of crystal dislocation defects that increases from the second optical surface to the first optical surface.
  • the first optical surface has a first surface subgrain boundary length per unit area in the range from about 10 to 50 cm/cm 2 .
  • the second optical surface has a second surface subgrain boundary length per unit area ⁇ 10 cm/cm .
  • An embodiment of the invention includes a fluoride crystal lens blank comprising a fluoride crystal having a center axis through a large dimension D surface.
  • the center axis and the large dimension D surface are encompassed by a blank perimeter.
  • the center axis aligns and coincides with an optically preferred crystallographic direction of the fluoride crystal.
  • the fluoride crystal lens blank has a variation in crystallographic orientation direction which spreads out from the center axis and tilts away from the center axis and towards the blank perimeter.
  • a further embodiment of the invention includes a birefringence minimizing fluoride crystal optical lithography lens blank.
  • the blank comprises a calcium fluoride crystal having a 193 nm internal transmission >99%/cm, a 157 nm internal transmission >99%/cm and a refractive index homogeneity no greater than 1 ppm.
  • the calcium fluoride crystal has a plurality of non-parallel crystallographic ⁇ 111> orientation and the blank has a center axis which coincides with a calcium fluoride crystal ⁇ 111>.
  • the blank has a crystal perimeter and a variation in crystallographic orientation direction wherein the angular deviation between the center axis and a given non-parallel crystallographic ⁇ 111> orientation having a relative location between said center axis and the perimeter correlates to the relative location distance from the center axis. Preferably the angular deviation increases with an increase in distance from the center axis.
  • Another embodiment of the invention includes a fluoride crystal optical element blank.
  • the optical element blank is comprised of a fluoride crystal having a diameter, a first diameter plane surface, a second diameter plane surface, and a crystal thickness defined by the first and second surfaces.
  • the blank lens has a concentration of crystal dislocation defects that increases from the second surface to the first surface.
  • the second surface has a second surface subgrain boundary length per unit area SS and the first surface has a first surface subgrain boundary length per unit area FS wherein FS>SS.
  • FIG. 1 shows embodiments of the invention in a lithography system/process.
  • FIG. 2-2H show embodiments of the invention in a lithography system/process with cross sectional views.
  • FIG. 3-3G show embodiments of the invention in a lithogaphy system/process with cross sectional views.
  • FIG. 4 shows a cross sectional view of a calcium fluoride crystal lens element with an oriented uniform ⁇ 11 1> crystallographic orientation direction with light passing through the outer perimeter of the lens having a light path that is not parallel to the ⁇ 111>.
  • FIG. 5-5a shows cross sectional views of embodiments of the invention.
  • FIG. 6 shows the crystallographic orientations of a calcium fluoride crystal including the ⁇ 111> crystallographic orientation direction in accordance with the invention, with the small circles representing F and the large circles representing Ca.
  • FIG. 7-7a shows a cross sectional view of an embodiment of the invention including a progressive concentration of crystal dislocation defects and variation in ⁇ 111>.
  • FIG. 8 shows a cross sectional view of an embodiment of the invention including a progressive concentration of crystal dislocation defects.
  • FIG. 9-9a shows a cross sectional view of embodiments of the invention.
  • FIG. 10 shows an embodiment of the invention.
  • FIG. 11 is a photomicrograph of a calcium fluoride crystal surface.
  • FIG. 12 is a photomicrograph of a calcium fluoride crystal surface.
  • FIG. 13 shows an embodiment of the invention.
  • the invention includes a birefringence minimizing fluoride crystal VUV lithography lens comprised of a fluoride crystal.
  • fluoride crystal VUV lithography lens are utilized in VUV microlithography systems/processes 51 which preferably utilize VUV wavelengths of light ⁇ 200 nm.
  • the fluoride crystal lens elements are utilized in the microlithography systems including the optics which make up the illumination system, preferably including the light source (which is preferably an excimer laser), and the projection system.
  • the fluoride crystal optical lithography lens 50 is comprised of a fluoride crystal 52, preferably a single crystal. As shown in FIG. 5, fluoride crystal optical lens 50 has an optical center axis 54 which is encompassed by a fluoride crystal lens perimeter 56. Fluoride lens 50 has a variation 58 in crystallographic orientation direction which tilts away from an optical center axis ⁇ 111> direction orientation 60 towards perimeter 56. As shown in FIG. 5a and 7a the ⁇ 111> crystallographic orientations 57 tilt away from optical center axis ⁇ 111> direction orientation 60 and spread out towards perimeter 56.
  • lens 50' of FIG. 4 is comprised of a fluoride crystal 52' with an oriented uniformity in ⁇ 111> crystallographic orientation directions 57' which are parallel throughout the crystal and orientated with the ⁇ 111> center axis, with fluoride crystal 52' having minimal crystal dislocation defects with a minimal uniform concentration.
  • lens 50 is comprised of a calcium fluoride crystal 52.
  • the calcium fluoride crystal 52 has a 157 nm internal transmission > 99%/cm.
  • the calcium fluoride crystal has a 193 nm internal transmission > 99%/cm.
  • FIG. 6 shows a calcium fluoride crystal with the calcium fluoride ⁇ 111> crystallographic orientation direction 57. The ⁇ 111> is perpendicular to the corresponding calcium fluoride (111) plane.
  • fluoride crystal optical lithography lens 50 has a first curved optical surface 62 and a second curved optical surface 64 for manipulating lithography light, preferably lithography light ⁇ ⁇ 200 nm.
  • fluoride crystal optical lithography lens 50 has a curved optical surface 66 and a planar optical surface
  • the variation in crystallographic orientation 58 is in the range from about 2 to 15 degrees, preferably from 3 to 12, and most preferably 5 to 10 degrees.
  • the variation in ⁇ 111 > orientation tilts away from the optical center axis 54 ⁇ 111> direction orientation 60 and towards lens perimeters 56.
  • the crystal disorientation ⁇ progresses from the center axis with ⁇ ⁇ 2 ⁇ 3 ⁇ 4 ⁇ 5 ⁇ 6 ⁇ 7 . . . ⁇ n .
  • fluoride crystal optical lithography lens 50 has nonparallel light ray paths 72 and fluoride crystal 52 has nonparallel ⁇ 111> crystal paths 74 in alignment with the lens light ray paths 72.
  • the crystallographic orientation direction ⁇ 111> crystal paths 74 are aligned with the light ray paths 72 that lens 50 is designed to manipulate.
  • lens 50 and crystal paths 74 are utilized to coverage or diverge an incident light beam comprised of light rays.
  • the invention further includes a fluoride crystal optical lens 76 comprised of a single fluoride crystal 78.
  • the fluoride crystal 78 has a first optical lens surface 80 and a separated second optical lens surface 82 which opposes the first.
  • Fluoride crystal 78 has a progressive concentration 84 of crystal dislocation defects 86 that increase from the second optical lens surface 80.
  • the concentration of crystal dislocation defects is a progressive concentration represented by the arrow 84 with the concentration of defects 86 preferably increasing from the second surface 82 to the first 80.
  • the first optical lens surface is a curved lens surface and the second optical lens surface is a curved lens surface.
  • the first optical lens surface is a flat optical surface.
  • the second optical lens surface is a flat optical surface.
  • lens 76 has an optical center axis 54 aligned with the local ⁇ 111> direction.
  • the single fluoride crystal 78 is calcium fluoride, preferably with a 193 nm internal transmission > 99%/cm and a 157 nm internal transmission > 99%/cm.
  • the invention further includes a calcium fluoride crystal optical element for manipulating a transmitting wavelength ⁇ ⁇ 200 nm.
  • the less than 200 nm wavelength optical element 76 is comprised of a calcium fluoride crystal 78.
  • the calcium fluoride crystal has a first optical surface 80 and a second optical surface 82 for manipulating ⁇ .
  • the calcium fluoride crystal has a concentration 84 of crystal dislocation defects 86 that increases from the second optical surface to the first optical surface.
  • the first optical surface has a first surface subgrain boundary length per unit area in the range from about 10 to 50 cm/cm 2 .
  • the second optical surface has a second surface subgrain boundary length per unit area less than 10 cm/cm 2 .
  • the element 76 has a large dimension D.
  • Preferably D is greater than 100 mm, more preferably > 150 mm, more preferably > 200 mm, more preferably ⁇ 250 mm, and most preferably > 300.
  • the first optical surface is a curved lens surface.
  • the second optical surface is a curved lens surface.
  • an optical surface is a flat optical surface.
  • ⁇ is centered about 193 nm and the calcium fluoride crystal has a 193 nm internal transmission > 99%/cm.
  • ⁇ is centered about 157 nm and the calcium fluoride crystal has a 157 nm internal transmission > 99 %/cm.
  • optical element 76 has a calcium fluoride crystal variation 58 in ⁇ 111> crystallographic orientation that tilts away and spreads out from a ⁇ 111> optical axis.
  • the variation is at least three degrees, and more preferably at least five degrees.
  • the invention further includes a fluoride crystal lens blank.
  • Fluoride crystal lens blank 100 is comprised of fluoride crystal 102.
  • Fluoride crystal 102 has a center axis 104 through a large dimension D surface 106. Center axis 104 and surface 106 are encompassed by blank perimeter 108. Center axis 104 is aligned with and coincides with an optically preferred crystallographic direction 110.
  • Fluoride crystal blank 100 has a variation 158 in crystallographic orientation direction 112 which spreads out from and tilts away from center axis 104 and toward blank perimeter 108.
  • fluoride crystal 102 is calcium fluoride.
  • the optically preferred crystal direction 110 is the calcium fluoride direction ⁇ 111>.
  • calcium fluoride crystal 102 has a 193 nm internal transmission >99%/cm.
  • the large dimension D of fluoride crystal lens blank 100 is > 100mm, more preferably D > 150 mm, more preferably > 200 mm, more preferably > 250 mm, and most preferably D > 300 mm.
  • the variation 158 is crystallographic orientations 112 is in the range from about 2 to 15 degrees, more preferably 3 to 12 degrees, and most preferably 5 to 10 degrees.
  • the variation 158 from the ⁇ 111> center axis 104 is at least 3 degrees, and more preferably > 5°.
  • blank 100 for forming into an optical element lens 76, 50 (such as shown by dashed lines inside blank 100), preferably has a second surface 114 which opposes surface 106 with fluoride crystal 102 having a concentration of crystal dislocation defects 86 that increases from second surface 114 to surface 106.
  • optical lens blank 100 as shown in FIG.
  • FIG. 10 has a second surface 114 having a second surface subgrain boundary length per unit area SS and surface 106 having a large dimension surface subgrain boundary length per unit area FS wherein FS > SS.
  • the second surface subgrain boundary length per unit area SS ⁇ 10 cm/cm 2
  • more preferably FS is in the range from about 10 to 50 cm/cm2.
  • FIG. 11-12 show the subgrain boundaries of a calcium fluoride optical lens blank surface that has been acid etched. These photomicrographs are of the calcium fluoride surface after acid etching for 15 minutes with 0.1 N Nitric acid.
  • FIG. 12 was analyzed with quantitative optical microscopy to measure subgrain boundary characteristics including subgrain boundary length per unit area.
  • calcium fluoride optical blank surface has a subgrain boundary length per unit area of 15 cm/cm and the average size of subgrains is about 1.8 mm in diameter.
  • the invention further includes a birefringence minimizing fluoride crystal optical lithography lens blank.
  • the optical element blank comprises a calcium fluoride crystal having a 193 nm internal transmission >99%/cm and a refractive index homogeneity no greater than 1 ppm.
  • calcium fluoride blank 100 has a plurality of non-parallel crystallographic ⁇ 111> orientations. Blank 100 has an optical center axis 104 which coincides with the local calcium fluoride crystal ⁇ 111> direction.
  • the blank has a variation 158 in crystallographic orientation direction wherein the angular deviation ⁇ between the center axis 104 and a non-parallel crystallographic ⁇ 111> orientation at a given location having a relative location distance between the center axis 104 and the perimeter 108 correlates to the relative distance between the given location and axis 104.
  • 9 and 9a blank 100 preferably has a first surface 106 and a second surface 114 with crystal dislocation defects 86 that increase from the second surface 114 to the first surface 106.
  • first and second surfaces are normal to the center axis, with blank 100 preferably in the shape form of a cylindrical disk of the appropriate size for the blank to be the preform of the optical element it is to be formed and shaped into.
  • blank 100 has a first surface 106 and a second surface 114 with the second surface 114 having a second surface subgrain boundary length per unit area (designated by SS) ⁇ 10 cm/cm and the first surface 106 having a first surface subgrain boundary length per unit area (designated by FS) > 10 cm/cm .
  • the first surface subgrain boundary length per unit area is in the range from about 10 to 50 cm/cm .
  • the invention further includes a fluoride crystal optical element blank.
  • the blank is preferably comprised of a single fluoride crystal, most preferably a calcium fluoride crystal.
  • Optical element blank 100 has a diameter D, a first diameter plane surface 106, a second diameter plane surface 114, and a crystal thickness TH between the first and second surfaces.
  • Blank 100 has a concentration 84 of crystal dislocation defects 86 that increases from the second surface 114 to the first surface 106, and the second surface 114 has a second surface subgrain boundary length per unit area SS and the first surface 106 has a first surface subgrain boundary length per unit area FS wherein FS > SS.
  • SS is less than 10 cm/cm 2 .
  • FS is in the range from about 10 to 50 cm/cm .

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Lenses (AREA)

Abstract

La présente invention concerne une lentille (50) optique pour lithographie VUV à cristaux de fluorure qui minimise l'effet biréfringent, convenant pour des longueurs d'ondes inférieures à 230 nm. Cette lentille pour lithographie VUV possède un axe optique entouré par un périmètre de lentille, et la lentille à cristaux de fluorure présente une variation (58) d'orientation cristallographique, celle-ci étant inclinée par rapport à l'axe optique central (54), en direction du périmètre de la lentille de façon à minimiser l'effet biréfringent.
EP00943048A 1999-06-25 2000-06-22 Lentille optique pour microlithographie vuv a cristaux de fluorure qui minimise l'effet birefringent, et paraisons optiques de celle-ci Withdrawn EP1224497A4 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP20030078941 EP1418447A1 (fr) 1999-06-25 2000-06-22 Lentille en cristal de fluorure avec une biréfringence minimum pour la microlithographie VUV et ébauche associée

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14115599P 1999-06-25 1999-06-25
US141155P 1999-06-25
PCT/US2000/017165 WO2001001182A1 (fr) 1999-06-25 2000-06-22 Lentille optique pour microlithographie vuv a cristaux de fluorure qui minimise l'effet birefringent, et paraisons optiques de celle-ci

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP20030078941 Division EP1418447A1 (fr) 1999-06-25 2000-06-22 Lentille en cristal de fluorure avec une biréfringence minimum pour la microlithographie VUV et ébauche associée

Publications (2)

Publication Number Publication Date
EP1224497A1 EP1224497A1 (fr) 2002-07-24
EP1224497A4 true EP1224497A4 (fr) 2003-08-27

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Country Status (3)

Country Link
EP (1) EP1224497A4 (fr)
TW (1) TW518425B (fr)
WO (1) WO2001001182A1 (fr)

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US7239447B2 (en) 2001-05-15 2007-07-03 Carl Zeiss Smt Ag Objective with crystal lenses
DE10123725A1 (de) 2001-05-15 2002-11-21 Zeiss Carl Projektionsbelichtungsanlage der Mikrolithographie, Optisches System und Herstellverfahren
JP2004526331A (ja) 2001-05-15 2004-08-26 カール・ツアイス・エスエムテイ・アーゲー フッ化物結晶レンズを含む対物レンズ
AU2002257270A1 (en) 2001-05-16 2002-11-25 Corning Incorporated Preferred crystal orientation optical elements from cubic materials
US6683710B2 (en) 2001-06-01 2004-01-27 Optical Research Associates Correction of birefringence in cubic crystalline optical systems
WO2003025636A1 (fr) 2001-09-14 2003-03-27 Corning Incorporated Procede photolithographique et cristaux de fluorure emettant des ultraviolets avec une dispersion spatiale reduite au maximum
US6995908B2 (en) 2001-10-30 2006-02-07 Asml Netherlands B.V. Methods for reducing aberration in optical systems
US7453641B2 (en) 2001-10-30 2008-11-18 Asml Netherlands B.V. Structures and methods for reducing aberration in optical systems
US6970232B2 (en) 2001-10-30 2005-11-29 Asml Netherlands B.V. Structures and methods for reducing aberration in integrated circuit fabrication systems
US6669920B2 (en) 2001-11-20 2003-12-30 Corning Incorporated Below 160NM optical lithography crystal materials and methods of making
JP3741208B2 (ja) * 2001-11-29 2006-02-01 株式会社ニコン 光リソグラフィー用光学部材及びその評価方法
WO2003076699A1 (fr) * 2002-03-05 2003-09-18 Corning Incorporated Procede de fabrication d'une ebauche de cristal de fluorure optiquement oriente
WO2003077011A1 (fr) * 2002-03-14 2003-09-18 Carl Zeiss Smt Ag Systeme optique a elements optiques birefringents
US7292388B2 (en) 2002-05-08 2007-11-06 Carl Zeiss Smt Ag Lens made of a crystalline material
US7154669B2 (en) * 2002-08-05 2006-12-26 Asml Holding N.V. Method and system for correction of intrinsic birefringence in UV microlithography
US7072102B2 (en) 2002-08-22 2006-07-04 Asml Netherlands B.V. Methods for reducing polarization aberration in optical systems
US7075905B2 (en) 2002-09-11 2006-07-11 Qualcomm Incorporated Quality indicator bit (QIB) generation in wireless communications systems
EP1586946A3 (fr) * 2004-04-14 2007-01-17 Carl Zeiss SMT AG Système optique d'un appareil de projection microlithographique
EP1598681A3 (fr) 2004-05-17 2006-03-01 Carl Zeiss SMT AG Composant optique ayant une surface courbée et un revêtement multicouche

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TW518425B (en) 2003-01-21
WO2001001182A1 (fr) 2001-01-04
EP1224497A1 (fr) 2002-07-24

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