WO2001001182A1 - Lentille optique pour microlithographie vuv a cristaux de fluorure qui minimise l'effet birefringent, et paraisons optiques de celle-ci - Google Patents

Lentille optique pour microlithographie vuv a cristaux de fluorure qui minimise l'effet birefringent, et paraisons optiques de celle-ci Download PDF

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Publication number
WO2001001182A1
WO2001001182A1 PCT/US2000/017165 US0017165W WO0101182A1 WO 2001001182 A1 WO2001001182 A1 WO 2001001182A1 US 0017165 W US0017165 W US 0017165W WO 0101182 A1 WO0101182 A1 WO 0101182A1
Authority
WO
WIPO (PCT)
Prior art keywords
lens
optical
fluoride crystal
blank
crystal
Prior art date
Application number
PCT/US2000/017165
Other languages
English (en)
Inventor
Gautam Meda
Michael Price
Michael Rivera
Original Assignee
Corning Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Incorporated filed Critical Corning Incorporated
Priority to US09/980,670 priority Critical patent/US6683714B1/en
Priority to EP00943048A priority patent/EP1224497A4/fr
Publication of WO2001001182A1 publication Critical patent/WO2001001182A1/fr

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/08—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of polarising materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
    • G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G03F7/70966—Birefringence

Definitions

  • the present invention overcomes problems in the prior art and provides beneficial lithography elements with beneficial optical properties and lithography characteristics including minimal birefringence and blanks therefor that can be used to improve the lithographic manufacturing of integrated circuits with VUV wavelengths.
  • the calcium fluoride crystal has a concentration of crystal dislocation defects that increases from the second optical surface to the first optical surface.
  • the first optical surface has a first surface subgrain boundary length per unit area in the range from about 10 to 50 cm/cm 2 .
  • the second optical surface has a second surface subgrain boundary length per unit area ⁇ 10 cm/cm .
  • first and second surfaces are normal to the center axis, with blank 100 preferably in the shape form of a cylindrical disk of the appropriate size for the blank to be the preform of the optical element it is to be formed and shaped into.
  • blank 100 has a first surface 106 and a second surface 114 with the second surface 114 having a second surface subgrain boundary length per unit area (designated by SS) ⁇ 10 cm/cm and the first surface 106 having a first surface subgrain boundary length per unit area (designated by FS) > 10 cm/cm .
  • the first surface subgrain boundary length per unit area is in the range from about 10 to 50 cm/cm .

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Lenses (AREA)

Abstract

La présente invention concerne une lentille (50) optique pour lithographie VUV à cristaux de fluorure qui minimise l'effet biréfringent, convenant pour des longueurs d'ondes inférieures à 230 nm. Cette lentille pour lithographie VUV possède un axe optique entouré par un périmètre de lentille, et la lentille à cristaux de fluorure présente une variation (58) d'orientation cristallographique, celle-ci étant inclinée par rapport à l'axe optique central (54), en direction du périmètre de la lentille de façon à minimiser l'effet biréfringent.
PCT/US2000/017165 1999-06-25 2000-06-22 Lentille optique pour microlithographie vuv a cristaux de fluorure qui minimise l'effet birefringent, et paraisons optiques de celle-ci WO2001001182A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US09/980,670 US6683714B1 (en) 1999-06-25 2000-06-22 Birefringence minimizing fluoride crystal optical VUV microlithography lens elements and optical blanks
EP00943048A EP1224497A4 (fr) 1999-06-25 2000-06-22 Lentille optique pour microlithographie vuv a cristaux de fluorure qui minimise l'effet birefringent, et paraisons optiques de celle-ci

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14115599P 1999-06-25 1999-06-25
US60/141,155 1999-06-25

Publications (1)

Publication Number Publication Date
WO2001001182A1 true WO2001001182A1 (fr) 2001-01-04

Family

ID=22494424

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/017165 WO2001001182A1 (fr) 1999-06-25 2000-06-22 Lentille optique pour microlithographie vuv a cristaux de fluorure qui minimise l'effet birefringent, et paraisons optiques de celle-ci

Country Status (3)

Country Link
EP (1) EP1224497A4 (fr)
TW (1) TW518425B (fr)
WO (1) WO2001001182A1 (fr)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002093209A2 (fr) * 2001-05-15 2002-11-21 Carl Zeiss Objectif comportant des lentilles de cristal de fluorure
EP1316848A2 (fr) * 2001-11-29 2003-06-04 Nikon Corporation Composant optique pour la photolithographie et méthode d'évaluation de celui-ci
WO2003076699A1 (fr) * 2002-03-05 2003-09-18 Corning Incorporated Procede de fabrication d'une ebauche de cristal de fluorure optiquement oriente
WO2003077011A1 (fr) * 2002-03-14 2003-09-18 Carl Zeiss Smt Ag Systeme optique a elements optiques birefringents
US6649326B2 (en) 2001-09-14 2003-11-18 Corning Incorporated Photolithographic method and UV transmitting fluoride crystals with minimized spatial dispersion
US6669920B2 (en) 2001-11-20 2003-12-30 Corning Incorporated Below 160NM optical lithography crystal materials and methods of making
US6765717B2 (en) 2001-05-16 2004-07-20 Corning Incorporated Preferred crystal orientation optical elements from cubic materials
US6917458B2 (en) 2001-06-01 2005-07-12 Asml Netherlands B.V. Correction of birefringence in cubic crystalline optical systems
EP1586946A2 (fr) * 2004-04-14 2005-10-19 Carl Zeiss SMT AG Système optique d'un appareil de projection microlithographique
US6958864B2 (en) 2002-08-22 2005-10-25 Asml Netherlands B.V. Structures and methods for reducing polarization aberration in integrated circuit fabrication systems
US6970232B2 (en) 2001-10-30 2005-11-29 Asml Netherlands B.V. Structures and methods for reducing aberration in integrated circuit fabrication systems
US6995908B2 (en) 2001-10-30 2006-02-07 Asml Netherlands B.V. Methods for reducing aberration in optical systems
EP1598681A3 (fr) * 2004-05-17 2006-03-01 Carl Zeiss SMT AG Composant optique ayant une surface courbée et un revêtement multicouche
US7075905B2 (en) 2002-09-11 2006-07-11 Qualcomm Incorporated Quality indicator bit (QIB) generation in wireless communications systems
US7170585B2 (en) 2001-05-15 2007-01-30 Carl Zeiss Smt Ag Projection lens and microlithographic projection exposure apparatus
US7239447B2 (en) 2001-05-15 2007-07-03 Carl Zeiss Smt Ag Objective with crystal lenses
CN1325956C (zh) * 2002-08-05 2007-07-11 Asml控股股份有限公司 在紫外微光刻术中修正固有双折射的方法和***
US7292388B2 (en) 2002-05-08 2007-11-06 Carl Zeiss Smt Ag Lens made of a crystalline material
US7453641B2 (en) 2001-10-30 2008-11-18 Asml Netherlands B.V. Structures and methods for reducing aberration in optical systems

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5031977A (en) * 1989-12-27 1991-07-16 General Signal Corporation Deep ultraviolet (UV) lens for use in a photolighography system
US6061174A (en) * 1997-03-18 2000-05-09 Nikon Corporation Image-focusing optical system for ultraviolet laser

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3856265B2 (ja) * 1998-03-12 2006-12-13 株式会社ニコン 光学素子の製造方法、光学素子の複屈折算出方法及び複屈折判定方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5031977A (en) * 1989-12-27 1991-07-16 General Signal Corporation Deep ultraviolet (UV) lens for use in a photolighography system
US6061174A (en) * 1997-03-18 2000-05-09 Nikon Corporation Image-focusing optical system for ultraviolet laser

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1224497A4 *

Cited By (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002093209A2 (fr) * 2001-05-15 2002-11-21 Carl Zeiss Objectif comportant des lentilles de cristal de fluorure
US7382536B2 (en) 2001-05-15 2008-06-03 Carl Zeiss Smt Ag Objective with fluoride crystal lenses
US7239447B2 (en) 2001-05-15 2007-07-03 Carl Zeiss Smt Ag Objective with crystal lenses
US7180667B2 (en) 2001-05-15 2007-02-20 Carl Zeiss Smt Ag Objective with fluoride crystal lenses
WO2002093209A3 (fr) * 2001-05-15 2003-10-23 Zeiss Carl Objectif comportant des lentilles de cristal de fluorure
US7170585B2 (en) 2001-05-15 2007-01-30 Carl Zeiss Smt Ag Projection lens and microlithographic projection exposure apparatus
US7145720B2 (en) 2001-05-15 2006-12-05 Carl Zeiss Smt Ag Objective with fluoride crystal lenses
US7126765B2 (en) * 2001-05-15 2006-10-24 Carl Zeiss Smt Ag Objective with fluoride crystal lenses
US6765717B2 (en) 2001-05-16 2004-07-20 Corning Incorporated Preferred crystal orientation optical elements from cubic materials
US6917458B2 (en) 2001-06-01 2005-07-12 Asml Netherlands B.V. Correction of birefringence in cubic crystalline optical systems
US7009769B2 (en) 2001-06-01 2006-03-07 Asml Netherlands B.V. Correction of birefringence in cubic crystalline optical systems
US6947192B2 (en) 2001-06-01 2005-09-20 Asml Netherlands B.V. Correction of birefringence in cubic crystalline optical systems
US7075696B2 (en) 2001-06-01 2006-07-11 Asml Netherlands B.V. Correction of birefringence in cubic crystalline optical systems
US6649326B2 (en) 2001-09-14 2003-11-18 Corning Incorporated Photolithographic method and UV transmitting fluoride crystals with minimized spatial dispersion
US7453641B2 (en) 2001-10-30 2008-11-18 Asml Netherlands B.V. Structures and methods for reducing aberration in optical systems
US6970232B2 (en) 2001-10-30 2005-11-29 Asml Netherlands B.V. Structures and methods for reducing aberration in integrated circuit fabrication systems
US7738172B2 (en) 2001-10-30 2010-06-15 Asml Netherlands B.V. Structures and methods for reducing aberration in optical systems
US6995908B2 (en) 2001-10-30 2006-02-07 Asml Netherlands B.V. Methods for reducing aberration in optical systems
US6669920B2 (en) 2001-11-20 2003-12-30 Corning Incorporated Below 160NM optical lithography crystal materials and methods of making
EP1316848A2 (fr) * 2001-11-29 2003-06-04 Nikon Corporation Composant optique pour la photolithographie et méthode d'évaluation de celui-ci
EP1316848A3 (fr) * 2001-11-29 2005-05-04 Nikon Corporation Composant optique pour la photolithographie et méthode d'évaluation de celui-ci
US7001462B2 (en) 2002-03-05 2006-02-21 Corning Incorporated Method for making an oriented optical fluoride crystal blank
WO2003076699A1 (fr) * 2002-03-05 2003-09-18 Corning Incorporated Procede de fabrication d'une ebauche de cristal de fluorure optiquement oriente
WO2003077011A1 (fr) * 2002-03-14 2003-09-18 Carl Zeiss Smt Ag Systeme optique a elements optiques birefringents
US7292388B2 (en) 2002-05-08 2007-11-06 Carl Zeiss Smt Ag Lens made of a crystalline material
US7672044B2 (en) 2002-05-08 2010-03-02 Carl Zeiss Smt Ag Lens made of a crystalline material
CN1325956C (zh) * 2002-08-05 2007-07-11 Asml控股股份有限公司 在紫外微光刻术中修正固有双折射的方法和***
US6958864B2 (en) 2002-08-22 2005-10-25 Asml Netherlands B.V. Structures and methods for reducing polarization aberration in integrated circuit fabrication systems
US7072102B2 (en) 2002-08-22 2006-07-04 Asml Netherlands B.V. Methods for reducing polarization aberration in optical systems
US7656582B2 (en) 2002-08-22 2010-02-02 Asml Netherlands B.V. Methods for reducing polarization aberration in optical systems
US7075720B2 (en) 2002-08-22 2006-07-11 Asml Netherlands B.V. Structures and methods for reducing polarization aberration in optical systems
US7511885B2 (en) 2002-08-22 2009-03-31 Asml Netherlands B.V. Methods for reducing polarization aberration in optical systems
US7075905B2 (en) 2002-09-11 2006-07-11 Qualcomm Incorporated Quality indicator bit (QIB) generation in wireless communications systems
US7929480B2 (en) 2002-09-11 2011-04-19 Qualcomm Incorporated Quality indicator bit (QIB) generation in wireless communication systems
EP1586946A3 (fr) * 2004-04-14 2007-01-17 Carl Zeiss SMT AG Système optique d'un appareil de projection microlithographique
EP1586946A2 (fr) * 2004-04-14 2005-10-19 Carl Zeiss SMT AG Système optique d'un appareil de projection microlithographique
US7489441B2 (en) 2004-05-17 2009-02-10 Carl Zeiss Smt Ag Monocrystalline optical component with curved surface and multilayer coating
EP1598681A3 (fr) * 2004-05-17 2006-03-01 Carl Zeiss SMT AG Composant optique ayant une surface courbée et un revêtement multicouche

Also Published As

Publication number Publication date
TW518425B (en) 2003-01-21
EP1224497A4 (fr) 2003-08-27
EP1224497A1 (fr) 2002-07-24

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