EP0685109B1 - Relais micromecanique a actionnement hybride - Google Patents

Relais micromecanique a actionnement hybride Download PDF

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Publication number
EP0685109B1
EP0685109B1 EP94906870A EP94906870A EP0685109B1 EP 0685109 B1 EP0685109 B1 EP 0685109B1 EP 94906870 A EP94906870 A EP 94906870A EP 94906870 A EP94906870 A EP 94906870A EP 0685109 B1 EP0685109 B1 EP 0685109B1
Authority
EP
European Patent Office
Prior art keywords
armature
substrate
electrode
base
base substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP94906870A
Other languages
German (de)
English (en)
Other versions
EP0685109A1 (fr
Inventor
Hans-Jürgen GEVATTER
Lothar Kiesewetter
Joachim Schimkat
Helmut Schlaak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19934305033 external-priority patent/DE4305033A1/de
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0685109A1 publication Critical patent/EP0685109A1/fr
Application granted granted Critical
Publication of EP0685109B1 publication Critical patent/EP0685109B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H57/00—Electrostrictive relays; Piezoelectric relays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/12—Contacts characterised by the manner in which co-operating contacts engage
    • H01H1/14—Contacts characterised by the manner in which co-operating contacts engage by abutting
    • H01H1/20—Bridging contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/50—Means for increasing contact pressure, preventing vibration of contacts, holding contacts together after engagement, or biasing contacts to the open position
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0052—Special contact materials used for MEMS
    • H01H2001/0057—Special contact materials used for MEMS the contact materials containing refractory materials, e.g. tungsten
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0084—Switches making use of microelectromechanical systems [MEMS] with perpendicular movement of the movable contact relative to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H57/00—Electrostrictive relays; Piezoelectric relays
    • H01H2057/006—Micromechanical piezoelectric relay
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H01H2059/0081—Electrostatic relays; Electro-adhesion relays making use of micromechanics with a tapered air-gap between fixed and movable electrodes

Definitions

  • the invention relates to a micromechanical relay with a base substrate, which carries a flat base electrode and at least one fixed mating contact piece, with an armature substrate which is arranged on the base substrate and consists of selectively etchable material and from which at least one armature in the form of a tongue connected on one side is etched free carries an armature electrode opposite the base electrode and an armature contact piece opposite the counter contact piece and which has an elastically flexible region between its connection to the armature substrate and the armature contact piece, such that the armature is attracted to the base substrate when an electrical voltage is applied between the armature electrode and the base electrode , and with electrical leads to the electrodes and to the contact pieces provided on the base substrate or on the armature substrate.
  • a micromechanical relay with an electrostatic drive is known, for example, from an essay by Minoru Sakata: "An Electrostatic Microactuator for Electro-Mechanical Relay", IEEE Micro Electro Mechanical Systems, February 1989, pages 149 to 151.
  • voltage is applied between the armature electrode and one of the two base electrodes, so that the armature optionally carries out a pivoting movement to one side or the other. Due to the distance of the torsion bearing to the base, a certain wedge-shaped air gap remains between the electrodes even after the pivoting movement, so that the electrostatic attraction remains relatively low. This also results in a relatively low contact force.
  • a relay of the type mentioned is already described in DE-C-42 05 029.
  • the tongue-shaped armature with its armature electrode forms a wedge-shaped air gap with a base electrode arranged obliquely to it, on which the armature rolls during the tightening movement until it lies on the base electrode over a large area in the tightened state. This results in a high electrostatic attraction force, which ensures a sufficient contact force even with micromechanical dimensions.
  • an electrostatic drive for relays has the disadvantage that at the beginning of the armature movement, that is to say with a large distance between the electrodes, the tightening force is relatively low, so that the relay responds only slowly or requires high response voltages.
  • the aim of the present invention is therefore to develop a micromechanical relay of the type mentioned in such a way that the response characteristic is improved, so that the advantages of the electrostatic drive - a relatively high contact force when the armature is attracted - are retained, but at the same time the forces at the beginning of Responsiveness can be increased.
  • this aim is achieved in the micromechanical relay mentioned at the outset in that the armature is provided in at least part of the above-mentioned flexible region with a piezo layer acting as a bending transducer with electrical leads, the bending force of which, when excited, supports the electrostatic attraction between the base electrode and the armature electrode.
  • the armature is therefore provided with a piezo drive in addition to the electrostatic drive.
  • the properties of two drive systems are usefully combined in such a way that the advantages of one drive outweigh the disadvantages of the other drive:
  • the piezo drive can move the armature by a large distance or over a large switching stroke, but produces with large armature deflection , ie in the working position, only a small force.
  • the electrostatic drive produces in Working position, ie when the armature is attracted, a large contact force, but the electrostatic attraction force at the beginning of the armature movement, that is to say with large electrode spacings, is only slight.
  • the armature in the form of a tongue carrying the armature electrode and the piezo layer is pivotally connected on one side to an armature substrate.
  • a more or less wedge-shaped air gap between the armature and the base generates a relatively high electrostatic attraction force from the start, which, however, is further improved by superimposition with the piezoelectric force.
  • the base electrode is preferably arranged on an obliquely etched section of the base substrate in such a way that the armature electrode forms the wedge-shaped air gap mentioned with it in the idle state and rests approximately parallel to it in the excited state. Since no air gap remains between the electrodes after the armature has been tightened, apart from the necessary thin insulating layers, relatively high contact forces can be obtained.
  • a micromechanical hybrid relay is shown schematically in FIG. 1, the actual size relationships being neglected in favor of clarity.
  • a base substrate 51 is provided, which can consist, for example, of silicon, but preferably also of Pyrex glass.
  • An armature substrate 52 which can preferably consist of silicon, is arranged and fastened on this base substrate 51.
  • a tongue-shaped armature 53 is formed in this armature substrate 52 as a surface area that is etched free.
  • the base substrate 51 and the armature substrate 52 are connected to areas etched free at their edges such that the armature 53 lies in a closed contact space 54.
  • the armature has an armature contact piece 55 which interacts with a fixed mating contact element 56 of the base substrate. Furthermore, an armature electrode 57 in the form of a metal layer is arranged on the armature on its surface area facing the base, which in turn is opposed to a base electrode 58 of the base substrate. These two electrodes 57 and 58 form an electrostatic drive for the relay.
  • the base electrode 58 is arranged on a beveled section 59 of the base substrate, so that the armature electrode 57, as shown in FIG. 1, rests continuously on the base electrode 58 in the drawn-up state of the armature.
  • the armature 53 has a piezoelectric drive in the form of a piezo layer 60, which works as a bending transducer and, above all at the start of the armature movement, applies the necessary tightening force for the armature.
  • the tongue end provided with the contact piece 55 could bend elastically to increase the contact force, while the lateral tongue ends with the electrode layer lying thereon lie flat on the base electrode 58.
  • suitable insulation layers although these layers are not specifically shown.
  • the two parts forming the relay are shown again in a somewhat enlarged representation before assembly, in order to emphasize the layers somewhat more clearly.
  • the geometric relationships do not correspond to the actual lengths and thicknesses of the individual layers.
  • An SiO 2 layer is produced thereon as an insulation layer and a metal layer is applied to this, which layer consists, for example, of aluminum and, on the one hand, the anchor electrode 57, but on the other hand also the feed line for the contact piece 55 and the inner electrode 61 for the piezoelectric layer to be subsequently applied 60 forms. Insofar as the metallic surfaces or lines have to be insulated from one another, this is done by appropriate longitudinal interruptions. After the piezoelectric layer 60, its outer electrode 62 is also a metal layer upset. At the free end of the tongue or the armature 53, the contact piece 55 is applied galvanically. In addition, the front end of the tongue can be divided into two by a slot in a switch spring and two laterally located electrostatic anchor elements.
  • the base is also produced from a base substrate 51 by etching from silicon or from Pyrex glass.
  • a trough 54a is produced anisotropically or isotropically, the bottom of which is parallel to the wafer surface.
  • a wedge-shaped recess for producing the bevel 59 is then etched into the trough base using a technique known per se, which is inclined at a flat angle against the surface of the substrate. The inclination is exaggerated in the drawing. In a practical example, the angle is on the order of 3 °.
  • a metal layer is then formed on the etched surface shape to form the base electrode 58 and the required leads.
  • the contact piece 56 is generated galvanically.
  • an insulation layer 63 for example made of SiO 2 , is applied in a conventional manner.
  • the piezoelectric layer 60 can also extend over the entire length of the tongue. In this case, it would act as an insulation layer between the electrodes 57 and 58, so that the additional insulation layer 63 would be unnecessary.
  • the two substrates 51 and 52 are joined together in a known manner, for example by anodic bonding.
  • the corresponding supply lines to the metal layers are also provided without this needing to be shown in the figure.
  • FIG. 3 shows a simple circuit for a hybrid drive according to FIG. 1.
  • a base electrode 11 is parallel to an armature electrode 23, which face each other in the form of a plate and when a voltage is applied from the voltage source 40 serve as an electrostatic drive.
  • Parallel to this electrostatic drive is a piezo transducer 41 with its electrodes 42 and 43, the electrode 43 being able to be formed from the same layer as the electrode 23.
  • the electrostatic drive with the electrodes 11 and 23 and the piezo drive with the electrodes 42 and 43 can be applied in parallel to the voltage source 40 via the switch 44. Both drives respond simultaneously and overlap their forces to close the respective contact.
  • the characteristic of the two drives is shown schematically in FIG.
  • the force F is plotted over an axis for the anchor spacing s.
  • the electrostatic force denoted by f1 is relatively low; it increases as the armature approaches the base electrode and reaches a high value when the distance s approaches 0.
  • the piezoelectric attraction, denoted by f2 is greatest at the beginning of the armature movement, i.e. when the armature distance is large. It becomes smaller with increasing deflection of the bending transducer towards the base electrode.
  • the piezoelectric force f2 thus compensates for the small value of f1 at the large armature distance a, while the electrostatic force f1 compensates for the small value of the piezoelectric force f2 after the armature has been closed.
  • the result is an overall course of the forces f3, which can overcome the counteracting spring force f4 of the elastic bearing strips over the entire course of the path and can generate a large contact force when the armature is closed.

Landscapes

  • Micromachines (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)

Claims (3)

  1. Relais micromécanique, comportant un substrat de base (51), lequel porte une électrode de base (58) plane et au moins un contre-contact (56) fixe, comportant un substrat d'armature (52) disposé sur le substrat de base (51) et composé d'un matériau susceptible d'être gravé par sélection, dans lequel est dégagée au moins une armature (53) en forme de lame reliée par un côté, qui porte une électrode d'armature (57) opposée à l'électrode de base (58) ainsi qu'un contact d'armature (55) opposé au contre-contact (56) et qui présente entre sa liaison avec le substrat d'armature (52) et le contact d'armature (55) une zone élastique souple, de sorte que lorsqu'une tension électrique est appliquée entre l'électrode d'armature (23 ; 57) et l'électrode de base (11 ; 58), l'armature est attirée contre le substrat de base, et comportant sur le substrat de base (51) ou sur le substrat d'armature (52) des lignes électriques menant aux électrodes (57, 58) et aux contacts (55, 56), caractérisé en ce que l'armature (53) est pourvue, au moins dans une partie de la zone flexible évoquée ci-dessus, d'une couche piézoélectrique (60) agissant comme transformateur de flexion et comportant des lignes électriques, dont la force de flexion lors de l'excitation augmente la force d'attraction électrostatique entre l'électrode de base et l'électrode d'armature.
  2. Relais selon la revendication 1, caractérisé en ce que l'électrode de base (58) est disposée sur un segment gravé à angle oblique du substrat de base (51), de sorte que l'électrode d'armature (57), lorsqu'elle est au repos, forme avec elle un entrefer en forme de coin et se mette contre elle, sensiblement parallèlement, lorsqu'elle est excitée.
  3. Relais selon la revendication 1 ou 2, caractérisé en ce que l'armature (53) est formée par une couche de surface dégagée sur trois côtés et gravée dans la partie sous-jacente d'un substrat d'armature (52) en matériau semiconducteur, en particulier en silicium, et en ce que le substrat de base (51) formé de silicium ou de verre Pyrex est relié à la surface du substrat d'armature (52).
EP94906870A 1993-02-18 1994-02-14 Relais micromecanique a actionnement hybride Expired - Lifetime EP0685109B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE4305033 1993-02-18
DE19934305033 DE4305033A1 (de) 1992-02-21 1993-02-18 Mikromechanisches Relais mit Hybridantrieb
PCT/DE1994/000152 WO1994019819A1 (fr) 1993-02-18 1994-02-14 Relais micromecanique a actionnement hybride

Publications (2)

Publication Number Publication Date
EP0685109A1 EP0685109A1 (fr) 1995-12-06
EP0685109B1 true EP0685109B1 (fr) 1997-08-13

Family

ID=6480807

Family Applications (1)

Application Number Title Priority Date Filing Date
EP94906870A Expired - Lifetime EP0685109B1 (fr) 1993-02-18 1994-02-14 Relais micromecanique a actionnement hybride

Country Status (8)

Country Link
US (1) US5666258A (fr)
EP (1) EP0685109B1 (fr)
JP (1) JPH08506690A (fr)
CN (1) CN1040049C (fr)
AT (1) ATE156934T1 (fr)
CA (1) CA2156257A1 (fr)
DE (1) DE59403733D1 (fr)
WO (1) WO1994019819A1 (fr)

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US6407482B2 (en) * 1996-08-27 2002-06-18 Omron Corporation Micro-relay and method for manufacturing the same
US6115231A (en) * 1997-11-25 2000-09-05 Tdk Corporation Electrostatic relay
FR2776160A1 (fr) * 1998-03-10 1999-09-17 Philips Consumer Communication Dispositif de commutation d'antenne entre des etages d'emission et de reception
US6320145B1 (en) * 1998-03-31 2001-11-20 California Institute Of Technology Fabricating and using a micromachined magnetostatic relay or switch
FI108583B (fi) * 1998-06-02 2002-02-15 Nokia Corp Resonaattorirakenteita
US6236491B1 (en) 1999-05-27 2001-05-22 Mcnc Micromachined electrostatic actuator with air gap
US6057520A (en) * 1999-06-30 2000-05-02 Mcnc Arc resistant high voltage micromachined electrostatic switch
US6229683B1 (en) 1999-06-30 2001-05-08 Mcnc High voltage micromachined electrostatic switch
US6359374B1 (en) 1999-11-23 2002-03-19 Mcnc Miniature electrical relays using a piezoelectric thin film as an actuating element
US6373682B1 (en) 1999-12-15 2002-04-16 Mcnc Electrostatically controlled variable capacitor
US6485273B1 (en) 2000-09-01 2002-11-26 Mcnc Distributed MEMS electrostatic pumping devices
US6590267B1 (en) 2000-09-14 2003-07-08 Mcnc Microelectromechanical flexible membrane electrostatic valve device and related fabrication methods
US6377438B1 (en) 2000-10-23 2002-04-23 Mcnc Hybrid microelectromechanical system tunable capacitor and associated fabrication methods
US6396620B1 (en) 2000-10-30 2002-05-28 Mcnc Electrostatically actuated electromagnetic radiation shutter
WO2002061781A1 (fr) * 2001-01-30 2002-08-08 Advantest Corporation Commutateur et dispositif de circuit integre
KR100456771B1 (ko) * 2002-02-04 2004-11-12 주식회사 엠에스솔루션 고주파용 압전 스위칭 소자
US6784389B2 (en) * 2002-03-13 2004-08-31 Ford Global Technologies, Llc Flexible circuit piezoelectric relay
US7432788B2 (en) * 2003-06-27 2008-10-07 Memscap, Inc. Microelectromechanical magnetic switches having rotors that rotate into a recess in a substrate
GB0320405D0 (en) * 2003-08-30 2003-10-01 Qinetiq Ltd Micro electromechanical system switch
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US7633213B2 (en) * 2005-03-15 2009-12-15 Panasonic Corporation Actuator, switch using the actuator, and method of controlling the actuator
JP4586642B2 (ja) * 2005-06-14 2010-11-24 ソニー株式会社 可動素子、ならびにその可動素子を内蔵する半導体デバイス、モジュールおよび電子機器
JP2007015067A (ja) * 2005-07-08 2007-01-25 Fujifilm Holdings Corp 微小薄膜可動素子及び微小薄膜可動素子アレイ並びに画像形成装置
KR20070053515A (ko) 2005-11-21 2007-05-25 삼성전자주식회사 Ｒｆ 멤스 스위치 및 그 제조방법
US7487678B2 (en) * 2006-12-13 2009-02-10 Honeywell International Inc. Z offset MEMS devices and methods
JP2008238330A (ja) 2007-03-27 2008-10-09 Toshiba Corp Ｍｅｍｓ装置およびこのｍｅｍｓ装置を有する携帯通信端末
JP2009238546A (ja) * 2008-03-26 2009-10-15 Panasonic Electric Works Co Ltd 微小電気機械スイッチ
JP5081038B2 (ja) * 2008-03-31 2012-11-21 パナソニック株式会社 Ｍｅｍｓスイッチおよびその製造方法
US8354899B2 (en) * 2009-09-23 2013-01-15 General Electric Company Switch structure and method
CN103843100B (zh) * 2011-10-06 2016-04-27 富士通株式会社 Mems开关
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DE4205340C1 (en) * 1992-02-21 1993-08-05 Siemens Ag, 8000 Muenchen, De Micro-mechanical electrostatic relay with parallel electrodes - has frame shaped armature substrate with armature contacts above base electrode contacts on base substrate

Also Published As

Publication number Publication date
CN1118199A (zh) 1996-03-06
EP0685109A1 (fr) 1995-12-06
WO1994019819A1 (fr) 1994-09-01
US5666258A (en) 1997-09-09
CN1040049C (zh) 1998-09-30
CA2156257A1 (fr) 1994-09-01
ATE156934T1 (de) 1997-08-15
DE59403733D1 (de) 1997-09-18
JPH08506690A (ja) 1996-07-16

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