EP0644558B2 - Kabelisolierstruktur - Google Patents

Kabelisolierstruktur Download PDF

Info

Publication number
EP0644558B2
EP0644558B2 EP94402087A EP94402087A EP0644558B2 EP 0644558 B2 EP0644558 B2 EP 0644558B2 EP 94402087 A EP94402087 A EP 94402087A EP 94402087 A EP94402087 A EP 94402087A EP 0644558 B2 EP0644558 B2 EP 0644558B2
Authority
EP
European Patent Office
Prior art keywords
matrix
une
semiconductor
layer
structure according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP94402087A
Other languages
English (en)
French (fr)
Other versions
EP0644558B1 (de
EP0644558A1 (de
Inventor
Madeleine Prigent
Hakim Janah
Robert Gadessaud
José Bezille
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nexans SA
Original Assignee
Nexans SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=9451076&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=EP0644558(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nexans SA filed Critical Nexans SA
Publication of EP0644558A1 publication Critical patent/EP0644558A1/de
Publication of EP0644558B1 publication Critical patent/EP0644558B1/de
Application granted granted Critical
Publication of EP0644558B2 publication Critical patent/EP0644558B2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B9/00Power cables
    • H01B9/02Power cables with screens or conductive layers, e.g. for avoiding large potential gradients
    • H01B9/027Power cables with screens or conductive layers, e.g. for avoiding large potential gradients composed of semi-conducting layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B9/00Power cables
    • H01B9/02Power cables with screens or conductive layers, e.g. for avoiding large potential gradients

Definitions

  • the present invention relates to a structure insulation for medium, high and very high cables voltage carrying direct or alternating current.
  • These cables are generally made up of a conductive core surrounded by an isolation structure which is coaxial to it.
  • This structure includes minus a first semiconductor layer placed at the contact of the cable core, itself surrounded by a second electrically insulating layer, in turn covered by a third semiconductor layer.
  • Other outer layers are used to protect the cable.
  • the insulating layer is usually based high density or low density polyethylene, polyethylene crosslinked, or even terpolymer of ethylenepropylene-diene to the main methylene chain (EPDM).
  • Semiconductor layers are generally composed of a polar matrix, most often a copolymer of ethylene and alkyl acrylate, which is charged with carbon black.
  • the amount of charge varies depending on the nature of the carbon black used.
  • the proportion of filler is generally between 28% and 40%.
  • the dielectric strength of such a cable is very linked to the quality of the interface between the semiconductor layer and the insulating layer.
  • the slightest roughness in level of this interface can cause strengthening of the electric field and lead to breakdown and the perforation of the insulating layer.
  • the matrix of semiconductor layers high voltage cables currently marketed is generally based on a polymer high melt index or melt index of around 17 (A high "melt index” is the sign of the presence of low molar masses, it is measured according to standards ASTM reference D1238 or NFT 51-016), and having a very wide distribution in molar masses. But we found in the insulating layer, near semiconductor layers, the appearance of charges of space whose accumulation leads to deterioration dielectric strength of the insulation up to breakdown.
  • Some semiconductor manufacturers use apolar matrices based on a copolymer of ethylene (EPR: thermoplastic ethylene-propylene elastomer, or EPDM: ethylene-propylene-diene terpolymer to main chain methylene), to which they add oils or plasticizers to facilitate obtaining a good surface condition of the layer semiconductor. These oils or plasticizers diffuse in the insulating layer and create at the interface between the semiconductor layer and the insulating layer, where the electric field is the highest, a region lower dielectric strength.
  • EPR thermoplastic ethylene-propylene elastomer
  • EPDM ethylene-propylene-diene terpolymer to main chain methylene
  • the object of the present invention is to provide an insulation structure for medium, high cables, and very high voltage carrying direct current or AC, having dielectric characteristics more stable over time than those known up to present.
  • the object of the present invention is a structure insulation for cable comprising at least one first contiguous and coaxial semiconductor layer at the core of the cable, surrounded by a second layer electrically insulating, itself covered by a third semiconductor layer.
  • Semiconductor layers consist exclusively of a matrix containing only apolar polymers of molar mass greater than 1000, and a conductive charge.
  • the components of the matrix have a molecular weight greater than 5000.
  • the semiconductor layers contain low molecular weight compounds or additives, like oils or plasticizers, these compounds migrate into the insulating layer. This phenomenon has as a consequence the formation of space charges which will cause electric field strengthening and can later lead to breakdowns.
  • This field reinforcement is linked to the amount of loads trained but also their mobility: a quantity of uniformly distributed charges giving no field reinforcement as important as the same amount of localized charges. This migration may occur during implementation or at during cable operation.
  • a semiconductor layer of composition according to the invention comprising only high molecular weight compounds, prevents migration of species in the insulating layer and thereby the accumulation of space charges near the interfaces.
  • the polymers are chosen from polyethylene, polypropylene, polystyrene, and their copolymers, alloys polymers chosen from polyethylene, polypropylene, polystyrene, and their copolymers, and mixtures of the compounds chosen from polyethylene, polypropylene, polystyrene, their copolymers, and the alloys previously mentioned.
  • the polymers are chosen from thermoplastic elastomers polyolefins and their mixtures.
  • the present invention has the advantage of stabilizing the dielectric characteristics of the structure isolation by suppressing compound migration of low molar mass. As a result, the quality of the interface between the different layers becomes a parameter less critical.
  • the filler is a carbon black containing the less possible impurities.
  • the pressure wave test is carried out at using the installation shown in Figure 1. This test assesses the strengthening of the electric field in an isolation structure.
  • the installation shown in Figure 1 is consists of a 10 "YAg" laser whose beam is sent on a target 11 corresponding to sample 1 of which each semiconductor constitutes an electrode (+) and (-).
  • This beam absorbed at the surface of the electrode 2 (-) decomposes this surface by pyrolysis, and the gases emitted cause a pressure wave to pass through the sample.
  • This wave modulates the image charges on the electrodes and gives access to the charge density volume in the sample.
  • a photodiode 12 makes it possible to synchronize a detector 13 with laser 10.
  • the circuit is electrically powered by a high voltage power supply 14 provided resistance 15.
  • the data recorded are transferred to be processed by a computer 16 and represented as a function of time on a graphic recorder 17.
  • the laser 10 sends a wave to the target 11 causing space charges to appear and modification of the distribution of the electric field which then is measured by the detector 13.
  • a sample similar to that described in example 4 is prepared but by adding to the matrix semiconductor layers, paraffinic oil at a rate of 5% by weight relative to the matrix.

Landscapes

  • Organic Insulating Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Conductive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Insulating Bodies (AREA)
  • Installation Of Indoor Wiring (AREA)

Claims (5)

  1. Kabelisolierstruktur, die wenigstens eine erste, halbleitende, an die Ader des Kabels angrenzende und zu dieser koaxiale Schicht umfasst, die von einer zweiten, elektrisch isolierenden Schicht umgeben ist, die ihrerseits von einer dritten, halbleitenden Schicht bedeckt ist, dadurch gekennzeichnet, dass die besagten halbleitenden Schichten ausschließlich aus einer Matrix, die nur apolare Polymere mit einer molaren Masse von mehr als 1000 umfasst, und einem leitfähigen Füllmaterial bestehen.
  2. Struktur nach Anspruch 1, bei der die Komponenten der besagten Matrix eine molare Masse von mehr als 5000 haben.
  3. Struktur nach einem der Ansprüche 1 und 2, bei der die Matrix unter Polyethylen, Polypropylen, Polystyrol und ihren Copolymeren, Legierungen von Polymeren, die unter Polyethylen, Polypropylen, Polystyrol und ihren Copolymeren ausgewählt sind, und den Gemischen der vorgenannten Verbindungen ausgewählt ist.
  4. Struktur nach einem der Ansprüche 1 und 2, bei der die Matrix unter polyolefinischen thermoplastischen Elastomeren und ihren Gemischen ausgewählt ist.
  5. Struktur nach einem der vorhergehenden Ansprüche, bei der das besagte Füllmaterial Acetylenruß ist.
EP94402087A 1993-09-21 1994-09-20 Kabelisolierstruktur Expired - Lifetime EP0644558B2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9311234A FR2710447B1 (fr) 1993-09-21 1993-09-21 Structure d'isolement pour câble.
FR9311234 1993-09-21

Publications (3)

Publication Number Publication Date
EP0644558A1 EP0644558A1 (de) 1995-03-22
EP0644558B1 EP0644558B1 (de) 1999-06-02
EP0644558B2 true EP0644558B2 (de) 2003-05-28

Family

ID=9451076

Family Applications (1)

Application Number Title Priority Date Filing Date
EP94402087A Expired - Lifetime EP0644558B2 (de) 1993-09-21 1994-09-20 Kabelisolierstruktur

Country Status (7)

Country Link
EP (1) EP0644558B2 (de)
JP (1) JP3658018B2 (de)
KR (1) KR100323179B1 (de)
CN (1) CN1122285C (de)
DE (1) DE69418804T3 (de)
DK (1) DK0644558T4 (de)
FR (1) FR2710447B1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004178867A (ja) * 2002-11-25 2004-06-24 Mitsubishi Cable Ind Ltd 電力ケーブル
EP1634913B1 (de) 2004-09-10 2008-10-29 Borealis Technology Oy Halbleitende Polymerzusammensetzung
JP4866545B2 (ja) * 2004-12-03 2012-02-01 株式会社フジクラ ケーブルおよび撚合せ型ケーブル
CH698074B1 (de) * 2005-11-11 2009-05-15 Studer Ag Draht & Kabelwerk Mehrleiterkabel für die Übertragung von rechteckig verlaufenden Wechselströmen.
EP2711934B1 (de) * 2012-09-25 2018-07-11 Nexans Mehrschichtige Silikonisolierung für Elektrokabel

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54115798A (en) 1978-03-01 1979-09-08 Fujikura Ltd Semiconductive composition for power cable
JPS5562610A (en) 1978-10-31 1980-05-12 Dainichi Nippon Cables Ltd Power cable
JPS57199108A (en) 1981-06-01 1982-12-07 Showa Electric Wire & Cable Co Crosslinked polyethylene insulated power cable
WO1993004486A1 (en) 1991-08-15 1993-03-04 Exxon Chemical Patents Inc. Electrical devices having polymeric insulating or semiconducting members
EP0389611B1 (de) 1988-09-30 1997-06-04 Exxon Chemical Patents Inc. Lineare ethylen-copolymermischungen von copolymeren mit engen molekulargewichts- und kompositionsverteilungen

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57126004A (en) * 1981-01-30 1982-08-05 Nippon Unicar Co Ltd Semiconductive polyolefin composition and cable using same
JP3081218B2 (ja) * 1990-06-22 2000-08-28 財団法人電力中央研究所 ポリオレフィン絶縁ケーブルの半導電層界面改良方法
JP4056009B2 (ja) * 2000-01-31 2008-03-05 東芝テック株式会社 インライン型ポンプ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54115798A (en) 1978-03-01 1979-09-08 Fujikura Ltd Semiconductive composition for power cable
JPS5562610A (en) 1978-10-31 1980-05-12 Dainichi Nippon Cables Ltd Power cable
JPS57199108A (en) 1981-06-01 1982-12-07 Showa Electric Wire & Cable Co Crosslinked polyethylene insulated power cable
EP0389611B1 (de) 1988-09-30 1997-06-04 Exxon Chemical Patents Inc. Lineare ethylen-copolymermischungen von copolymeren mit engen molekulargewichts- und kompositionsverteilungen
WO1993004486A1 (en) 1991-08-15 1993-03-04 Exxon Chemical Patents Inc. Electrical devices having polymeric insulating or semiconducting members

Also Published As

Publication number Publication date
DE69418804T2 (de) 1999-12-09
EP0644558B1 (de) 1999-06-02
CN1108789A (zh) 1995-09-20
CN1122285C (zh) 2003-09-24
DE69418804T3 (de) 2004-04-01
DK0644558T4 (da) 2003-09-22
KR100323179B1 (ko) 2002-06-27
DK0644558T3 (da) 1999-12-13
JPH07169324A (ja) 1995-07-04
FR2710447B1 (fr) 1995-11-10
DE69418804D1 (de) 1999-07-08
EP0644558A1 (de) 1995-03-22
KR950009752A (ko) 1995-04-24
FR2710447A1 (fr) 1995-03-31
JP3658018B2 (ja) 2005-06-08

Similar Documents

Publication Publication Date Title
EP1128395B1 (de) Hoch und Höchstspannungsgleichstromenergiekabel
FR2950728A1 (fr) Cable electrique a moyenne ou haute tension
EP0660483B1 (de) Vorrichtung zum Verbinden von Energiekabeln
CA2693853A1 (fr) Cable electrique a haute tension
FR2501897A1 (fr) Cable isole a haute tension
FR2972560A1 (fr) Cable electrique a moyenne ou haute tension
EP3671769A1 (de) Elektrisches kabel mit verbesserter temperaturalterungsbeständigkeit
EP0644558B2 (de) Kabelisolierstruktur
FR2937041A1 (fr) Composition semi-conductrice pour cables electriques
FR2475280A1 (fr) Cable d'allumage tres perfectionne
FR3021451A1 (fr) Cable electrique comprenant une couche reticulee
EP2136376B1 (de) Hochspannungsstromkabel
EP3671767A1 (de) Elektrisches kabel, das beständig gegen wasserbäumchen ist
EP1280167B1 (de) Halbleitende Abschirmung für Energiekabel
FR2972559A1 (fr) Cable electrique a moyenne ou haute tension
FR2485245A1 (fr) Varistance a l'oxyde de zinc perfectionnee et parafoudre utilisant de telles varistances
FR2710183A1 (fr) Câble d'énergie à rigidité diélectrique améliorée.
CA3065965A1 (fr) Cable comprenant une couche semi-conductrice facilement pelable
FR3127623A1 (fr) Câble électrique comprenant une couche semi-conductrice présentant une surface lisse
EP2498264B1 (de) Mittel- oder Hochspannungsstromkabel
EP3671768A1 (de) Elektrisches kabel, das beständig gegen wasserbäumchen ist
EP3544025A1 (de) Elektrokabel mit einer leicht abziehbaren polymerschicht
FR2601184A1 (fr) Cable electrique de securite resistant au feu et non-propagateur de l'incendie, ainsi que son procede de fabrication
FR2629626A1 (fr) Cable pour courant continu
EP1462837A1 (de) Faseroptisches Kabel mit Isolationsschicht auf der Basis von Polymeren

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE DK FR GB IT NL SE

17P Request for examination filed

Effective date: 19950721

17Q First examination report despatched

Effective date: 19951108

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

GRAG Despatch of communication of intention to grant

Free format text: ORIGINAL CODE: EPIDOS AGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAH Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOS IGRA

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: ALCATEL

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE DK FR GB IT NL SE

REF Corresponds to:

Ref document number: 69418804

Country of ref document: DE

Date of ref document: 19990708

GBT Gb: translation of ep patent filed (gb section 77(6)(a)/1977)

Effective date: 19990708

ITF It: translation for a ep patent filed

Owner name: JACOBACCI & PERANI S.P.A.

REG Reference to a national code

Ref country code: DK

Ref legal event code: T3

PLBQ Unpublished change to opponent data

Free format text: ORIGINAL CODE: EPIDOS OPPO

PLBI Opposition filed

Free format text: ORIGINAL CODE: 0009260

PLBF Reply of patent proprietor to notice(s) of opposition

Free format text: ORIGINAL CODE: EPIDOS OBSO

26 Opposition filed

Opponent name: BOREALIS A/S

Effective date: 20000301

NLR1 Nl: opposition has been filed with the epo

Opponent name: BOREALIS A/S

PLBF Reply of patent proprietor to notice(s) of opposition

Free format text: ORIGINAL CODE: EPIDOS OBSO

PLBF Reply of patent proprietor to notice(s) of opposition

Free format text: ORIGINAL CODE: EPIDOS OBSO

NLS Nl: assignments of ep-patents

Owner name: NEXANS

REG Reference to a national code

Ref country code: GB

Ref legal event code: 732E

RAP2 Party data changed (patent owner data changed or rights of a patent transferred)

Owner name: NEXANS

REG Reference to a national code

Ref country code: GB

Ref legal event code: IF02

NLT2 Nl: modifications (of names), taken from the european patent patent bulletin

Owner name: NEXANS

PLAW Interlocutory decision in opposition

Free format text: ORIGINAL CODE: EPIDOS IDOP

PLAW Interlocutory decision in opposition

Free format text: ORIGINAL CODE: EPIDOS IDOP

PUAH Patent maintained in amended form

Free format text: ORIGINAL CODE: 0009272

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: PATENT MAINTAINED AS AMENDED

27A Patent maintained in amended form

Effective date: 20030528

AK Designated contracting states

Designated state(s): DE DK FR GB IT NL SE

NLR2 Nl: decision of opposition

Effective date: 20030528

REG Reference to a national code

Ref country code: SE

Ref legal event code: RPEO

REG Reference to a national code

Ref country code: DK

Ref legal event code: T4

GBTA Gb: translation of amended ep patent filed (gb section 77(6)(b)/1977)
NLR3 Nl: receipt of modified translations in the netherlands language after an opposition procedure
PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DK

Payment date: 20110926

Year of fee payment: 18

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20110920

Year of fee payment: 18

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: NL

Payment date: 20110929

Year of fee payment: 18

REG Reference to a national code

Ref country code: NL

Ref legal event code: V1

Effective date: 20130401

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20120920

REG Reference to a national code

Ref country code: DK

Ref legal event code: EBP

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20120920

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20130401

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DK

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20121001

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20130919

Year of fee payment: 20

Ref country code: SE

Payment date: 20130919

Year of fee payment: 20

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20130919

Year of fee payment: 20

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: IT

Payment date: 20130930

Year of fee payment: 20

REG Reference to a national code

Ref country code: DE

Ref legal event code: R071

Ref document number: 69418804

Country of ref document: DE

REG Reference to a national code

Ref country code: DE

Ref legal event code: R071

Ref document number: 69418804

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF EXPIRATION OF PROTECTION

Effective date: 20140923

REG Reference to a national code

Ref country code: SE

Ref legal event code: EUG