EP0644558B2 - Kabelisolierstruktur - Google Patents
Kabelisolierstruktur Download PDFInfo
- Publication number
- EP0644558B2 EP0644558B2 EP94402087A EP94402087A EP0644558B2 EP 0644558 B2 EP0644558 B2 EP 0644558B2 EP 94402087 A EP94402087 A EP 94402087A EP 94402087 A EP94402087 A EP 94402087A EP 0644558 B2 EP0644558 B2 EP 0644558B2
- Authority
- EP
- European Patent Office
- Prior art keywords
- matrix
- une
- semiconductor
- layer
- structure according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B9/00—Power cables
- H01B9/02—Power cables with screens or conductive layers, e.g. for avoiding large potential gradients
- H01B9/027—Power cables with screens or conductive layers, e.g. for avoiding large potential gradients composed of semi-conducting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B9/00—Power cables
- H01B9/02—Power cables with screens or conductive layers, e.g. for avoiding large potential gradients
Definitions
- the present invention relates to a structure insulation for medium, high and very high cables voltage carrying direct or alternating current.
- These cables are generally made up of a conductive core surrounded by an isolation structure which is coaxial to it.
- This structure includes minus a first semiconductor layer placed at the contact of the cable core, itself surrounded by a second electrically insulating layer, in turn covered by a third semiconductor layer.
- Other outer layers are used to protect the cable.
- the insulating layer is usually based high density or low density polyethylene, polyethylene crosslinked, or even terpolymer of ethylenepropylene-diene to the main methylene chain (EPDM).
- Semiconductor layers are generally composed of a polar matrix, most often a copolymer of ethylene and alkyl acrylate, which is charged with carbon black.
- the amount of charge varies depending on the nature of the carbon black used.
- the proportion of filler is generally between 28% and 40%.
- the dielectric strength of such a cable is very linked to the quality of the interface between the semiconductor layer and the insulating layer.
- the slightest roughness in level of this interface can cause strengthening of the electric field and lead to breakdown and the perforation of the insulating layer.
- the matrix of semiconductor layers high voltage cables currently marketed is generally based on a polymer high melt index or melt index of around 17 (A high "melt index” is the sign of the presence of low molar masses, it is measured according to standards ASTM reference D1238 or NFT 51-016), and having a very wide distribution in molar masses. But we found in the insulating layer, near semiconductor layers, the appearance of charges of space whose accumulation leads to deterioration dielectric strength of the insulation up to breakdown.
- Some semiconductor manufacturers use apolar matrices based on a copolymer of ethylene (EPR: thermoplastic ethylene-propylene elastomer, or EPDM: ethylene-propylene-diene terpolymer to main chain methylene), to which they add oils or plasticizers to facilitate obtaining a good surface condition of the layer semiconductor. These oils or plasticizers diffuse in the insulating layer and create at the interface between the semiconductor layer and the insulating layer, where the electric field is the highest, a region lower dielectric strength.
- EPR thermoplastic ethylene-propylene elastomer
- EPDM ethylene-propylene-diene terpolymer to main chain methylene
- the object of the present invention is to provide an insulation structure for medium, high cables, and very high voltage carrying direct current or AC, having dielectric characteristics more stable over time than those known up to present.
- the object of the present invention is a structure insulation for cable comprising at least one first contiguous and coaxial semiconductor layer at the core of the cable, surrounded by a second layer electrically insulating, itself covered by a third semiconductor layer.
- Semiconductor layers consist exclusively of a matrix containing only apolar polymers of molar mass greater than 1000, and a conductive charge.
- the components of the matrix have a molecular weight greater than 5000.
- the semiconductor layers contain low molecular weight compounds or additives, like oils or plasticizers, these compounds migrate into the insulating layer. This phenomenon has as a consequence the formation of space charges which will cause electric field strengthening and can later lead to breakdowns.
- This field reinforcement is linked to the amount of loads trained but also their mobility: a quantity of uniformly distributed charges giving no field reinforcement as important as the same amount of localized charges. This migration may occur during implementation or at during cable operation.
- a semiconductor layer of composition according to the invention comprising only high molecular weight compounds, prevents migration of species in the insulating layer and thereby the accumulation of space charges near the interfaces.
- the polymers are chosen from polyethylene, polypropylene, polystyrene, and their copolymers, alloys polymers chosen from polyethylene, polypropylene, polystyrene, and their copolymers, and mixtures of the compounds chosen from polyethylene, polypropylene, polystyrene, their copolymers, and the alloys previously mentioned.
- the polymers are chosen from thermoplastic elastomers polyolefins and their mixtures.
- the present invention has the advantage of stabilizing the dielectric characteristics of the structure isolation by suppressing compound migration of low molar mass. As a result, the quality of the interface between the different layers becomes a parameter less critical.
- the filler is a carbon black containing the less possible impurities.
- the pressure wave test is carried out at using the installation shown in Figure 1. This test assesses the strengthening of the electric field in an isolation structure.
- the installation shown in Figure 1 is consists of a 10 "YAg" laser whose beam is sent on a target 11 corresponding to sample 1 of which each semiconductor constitutes an electrode (+) and (-).
- This beam absorbed at the surface of the electrode 2 (-) decomposes this surface by pyrolysis, and the gases emitted cause a pressure wave to pass through the sample.
- This wave modulates the image charges on the electrodes and gives access to the charge density volume in the sample.
- a photodiode 12 makes it possible to synchronize a detector 13 with laser 10.
- the circuit is electrically powered by a high voltage power supply 14 provided resistance 15.
- the data recorded are transferred to be processed by a computer 16 and represented as a function of time on a graphic recorder 17.
- the laser 10 sends a wave to the target 11 causing space charges to appear and modification of the distribution of the electric field which then is measured by the detector 13.
- a sample similar to that described in example 4 is prepared but by adding to the matrix semiconductor layers, paraffinic oil at a rate of 5% by weight relative to the matrix.
Landscapes
- Organic Insulating Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Conductive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Insulating Bodies (AREA)
- Installation Of Indoor Wiring (AREA)
Claims (5)
- Kabelisolierstruktur, die wenigstens eine erste, halbleitende, an die Ader des Kabels angrenzende und zu dieser koaxiale Schicht umfasst, die von einer zweiten, elektrisch isolierenden Schicht umgeben ist, die ihrerseits von einer dritten, halbleitenden Schicht bedeckt ist, dadurch gekennzeichnet, dass die besagten halbleitenden Schichten ausschließlich aus einer Matrix, die nur apolare Polymere mit einer molaren Masse von mehr als 1000 umfasst, und einem leitfähigen Füllmaterial bestehen.
- Struktur nach Anspruch 1, bei der die Komponenten der besagten Matrix eine molare Masse von mehr als 5000 haben.
- Struktur nach einem der Ansprüche 1 und 2, bei der die Matrix unter Polyethylen, Polypropylen, Polystyrol und ihren Copolymeren, Legierungen von Polymeren, die unter Polyethylen, Polypropylen, Polystyrol und ihren Copolymeren ausgewählt sind, und den Gemischen der vorgenannten Verbindungen ausgewählt ist.
- Struktur nach einem der Ansprüche 1 und 2, bei der die Matrix unter polyolefinischen thermoplastischen Elastomeren und ihren Gemischen ausgewählt ist.
- Struktur nach einem der vorhergehenden Ansprüche, bei der das besagte Füllmaterial Acetylenruß ist.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9311234A FR2710447B1 (fr) | 1993-09-21 | 1993-09-21 | Structure d'isolement pour câble. |
FR9311234 | 1993-09-21 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0644558A1 EP0644558A1 (de) | 1995-03-22 |
EP0644558B1 EP0644558B1 (de) | 1999-06-02 |
EP0644558B2 true EP0644558B2 (de) | 2003-05-28 |
Family
ID=9451076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP94402087A Expired - Lifetime EP0644558B2 (de) | 1993-09-21 | 1994-09-20 | Kabelisolierstruktur |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0644558B2 (de) |
JP (1) | JP3658018B2 (de) |
KR (1) | KR100323179B1 (de) |
CN (1) | CN1122285C (de) |
DE (1) | DE69418804T3 (de) |
DK (1) | DK0644558T4 (de) |
FR (1) | FR2710447B1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004178867A (ja) * | 2002-11-25 | 2004-06-24 | Mitsubishi Cable Ind Ltd | 電力ケーブル |
EP1634913B1 (de) | 2004-09-10 | 2008-10-29 | Borealis Technology Oy | Halbleitende Polymerzusammensetzung |
JP4866545B2 (ja) * | 2004-12-03 | 2012-02-01 | 株式会社フジクラ | ケーブルおよび撚合せ型ケーブル |
CH698074B1 (de) * | 2005-11-11 | 2009-05-15 | Studer Ag Draht & Kabelwerk | Mehrleiterkabel für die Übertragung von rechteckig verlaufenden Wechselströmen. |
EP2711934B1 (de) * | 2012-09-25 | 2018-07-11 | Nexans | Mehrschichtige Silikonisolierung für Elektrokabel |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54115798A (en) † | 1978-03-01 | 1979-09-08 | Fujikura Ltd | Semiconductive composition for power cable |
JPS5562610A (en) † | 1978-10-31 | 1980-05-12 | Dainichi Nippon Cables Ltd | Power cable |
JPS57199108A (en) † | 1981-06-01 | 1982-12-07 | Showa Electric Wire & Cable Co | Crosslinked polyethylene insulated power cable |
WO1993004486A1 (en) † | 1991-08-15 | 1993-03-04 | Exxon Chemical Patents Inc. | Electrical devices having polymeric insulating or semiconducting members |
EP0389611B1 (de) † | 1988-09-30 | 1997-06-04 | Exxon Chemical Patents Inc. | Lineare ethylen-copolymermischungen von copolymeren mit engen molekulargewichts- und kompositionsverteilungen |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57126004A (en) * | 1981-01-30 | 1982-08-05 | Nippon Unicar Co Ltd | Semiconductive polyolefin composition and cable using same |
JP3081218B2 (ja) * | 1990-06-22 | 2000-08-28 | 財団法人電力中央研究所 | ポリオレフィン絶縁ケーブルの半導電層界面改良方法 |
JP4056009B2 (ja) * | 2000-01-31 | 2008-03-05 | 東芝テック株式会社 | インライン型ポンプ |
-
1993
- 1993-09-21 FR FR9311234A patent/FR2710447B1/fr not_active Expired - Lifetime
-
1994
- 1994-09-17 KR KR1019940023808A patent/KR100323179B1/ko not_active IP Right Cessation
- 1994-09-20 EP EP94402087A patent/EP0644558B2/de not_active Expired - Lifetime
- 1994-09-20 DE DE69418804T patent/DE69418804T3/de not_active Expired - Lifetime
- 1994-09-20 DK DK94402087T patent/DK0644558T4/da active
- 1994-09-20 JP JP22505494A patent/JP3658018B2/ja not_active Expired - Fee Related
- 1994-09-21 CN CN94113695A patent/CN1122285C/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54115798A (en) † | 1978-03-01 | 1979-09-08 | Fujikura Ltd | Semiconductive composition for power cable |
JPS5562610A (en) † | 1978-10-31 | 1980-05-12 | Dainichi Nippon Cables Ltd | Power cable |
JPS57199108A (en) † | 1981-06-01 | 1982-12-07 | Showa Electric Wire & Cable Co | Crosslinked polyethylene insulated power cable |
EP0389611B1 (de) † | 1988-09-30 | 1997-06-04 | Exxon Chemical Patents Inc. | Lineare ethylen-copolymermischungen von copolymeren mit engen molekulargewichts- und kompositionsverteilungen |
WO1993004486A1 (en) † | 1991-08-15 | 1993-03-04 | Exxon Chemical Patents Inc. | Electrical devices having polymeric insulating or semiconducting members |
Also Published As
Publication number | Publication date |
---|---|
DE69418804T2 (de) | 1999-12-09 |
EP0644558B1 (de) | 1999-06-02 |
CN1108789A (zh) | 1995-09-20 |
CN1122285C (zh) | 2003-09-24 |
DE69418804T3 (de) | 2004-04-01 |
DK0644558T4 (da) | 2003-09-22 |
KR100323179B1 (ko) | 2002-06-27 |
DK0644558T3 (da) | 1999-12-13 |
JPH07169324A (ja) | 1995-07-04 |
FR2710447B1 (fr) | 1995-11-10 |
DE69418804D1 (de) | 1999-07-08 |
EP0644558A1 (de) | 1995-03-22 |
KR950009752A (ko) | 1995-04-24 |
FR2710447A1 (fr) | 1995-03-31 |
JP3658018B2 (ja) | 2005-06-08 |
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