EP0644558B1 - Kabelisolierstruktur - Google Patents
Kabelisolierstruktur Download PDFInfo
- Publication number
- EP0644558B1 EP0644558B1 EP94402087A EP94402087A EP0644558B1 EP 0644558 B1 EP0644558 B1 EP 0644558B1 EP 94402087 A EP94402087 A EP 94402087A EP 94402087 A EP94402087 A EP 94402087A EP 0644558 B1 EP0644558 B1 EP 0644558B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- matrix
- une
- structure according
- semiconductor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B9/00—Power cables
- H01B9/02—Power cables with screens or conductive layers, e.g. for avoiding large potential gradients
- H01B9/027—Power cables with screens or conductive layers, e.g. for avoiding large potential gradients composed of semi-conducting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B9/00—Power cables
- H01B9/02—Power cables with screens or conductive layers, e.g. for avoiding large potential gradients
Definitions
- the present invention relates to a structure insulation for medium, high and very high voltage cables carrying direct or alternating current.
- These cables generally consist of a core conductor surrounded by an isolation structure attached to it coaxial.
- This structure includes at least a first semiconductor layer placed in contact with the cable core, itself surrounded by a second layer electrically insulating, in turn covered by a third layer semiconductor.
- Other outer layers are used to cable protection.
- the insulating layer is usually based on high density or low density polyethylene, polyethylene crosslinked, or alternatively of ethylenepropylene-diene terpolymer with main methylene chain (EPDM).
- EPDM ethylenepropylene-diene terpolymer with main methylene chain
- Semiconductor layers are generally composed of a polar matrix, most often a copolymer of ethylene and alkyl acrylate, which is charged with carbon black.
- the amount of charge varies according to the nature of the carbon black used.
- the proportion of filler is generally between 28% and 40%.
- the dielectric strength of such a cable is very linked the quality of the interface between the semiconductor layer and the insulating layer.
- the slightest roughness in this interface can cause a reinforcement of the field electric and lead to breakdown and perforation of the insulating layer.
- the matrix of semiconductor layers currently sold high voltage cables is generally based on a polymer of melt index or high "melt index" of around 17 (A high "melt index” is the sign of the presence of low molar masses, it is measured according to ASTM standards reference D1238 or NFT 51-016), and having a very large mass distribution molars. But we found in the insulating layer, proximity of the semiconductor layers, the appearance of loads of space, the accumulation of which deterioration of the dielectric strength of the insulation go to the breakdown.
- Some semiconductor manufacturers use apolar matrices based on an ethylene copolymer (EPR: thermoplastic ethylene-propylene elastomer, or EPDM: ethylene-propylene-diene chain terpolymer main methylene), to which they add oils or plasticizers to facilitate obtaining a good state of surface of the semiconductor layer. Now these oils or plasticizers diffuse in the insulating layer and create level of the interface between the semiconductor layer and the insulating layer, where the electric field is the highest, a region of lower dielectric strength.
- EPR thermoplastic ethylene-propylene elastomer
- EPDM ethylene-propylene-diene chain terpolymer main methylene
- the object of the present invention is to provide a insulation structure for medium, high, and very high voltage carrying direct or alternating current, having more stable dielectric characteristics over time than those known so far.
- the object of the present invention is a structure insulation for cable comprising at least a first semiconductor layer contiguous and coaxial with the core of the cable, surrounded by a second layer electrically insulating, itself covered by a third layer semiconductor.
- the semiconductor layers are composed exclusively of a matrix comprising only apolar polymers with a molar mass greater than 1000, and of a conductive charge.
- the components of the matrix have a molecular mass greater than 5000.
- the semiconductor layers contain compounds with low molecular weights or additives, such as oils or plasticizers, these compounds migrate into the insulating layer. This phenomenon results in the formation of space charges which will cause electric field enhancement and can lead subsequent to breakdowns.
- This field reinforcement is linked to the quantity of charges formed but also to their mobility: a quantity of uniformly distributed loads does not giving no field reinforcement as important as the same amount of localized charges. This migration can be produce during implementation or during cable operation.
- composition according to the invention comprising only mass compounds high molar, prevents migration of species into the insulating layer and thereby the accumulation of charges of space near the interfaces.
- the polymers are chosen from polyethylene, polypropylene, polystyrene, and their copolymers, alloys of polymers chosen from polyethylene, polypropylene, polystyrene, and their copolymers, and mixtures of the compounds chosen from polyethylene, polypropylene, polystyrene, their copolymers, and previously cited alloys.
- the polymers are chosen from elastomers polyolefinic thermoplastics and their mixtures.
- the present invention has the advantage of stabilizing the dielectric characteristics of the structure isolation by suppressing the migration of the compounds of low molar mass. As a result, the quality of the interface between the different layers becomes a less critical parameter.
- the filler is a carbon black containing the least possible impurities. You can use a baked black or a black "KETJEN", but we will preferably choose a black acetylene which is much purer.
- the matrix also contains before its shaping a crosslinking agent. After shaping material by extrusion, it can be cross-linked for to improve its thermomechanical properties. These properties are particularly critical for cables carrying alternating current.
- the pressure wave test is carried out using the installation shown in Figure 1. This test allows to assess the strengthening of the electric field in a isolation structure.
- the installation shown in Figure 1 consists a laser 10 "YAg” whose beam is sent on a target 11 corresponding to sample 1 of which each semiconductor constitutes an electrode (+) and (-).
- This beam absorbed at the surface of electrode 2 (-) breaks down this surface by pyrolysis, and the gases emitted cause a wave of pressure passing through the sample. This wave modulates the charge-images on the electrodes and gives access to the volume charge density in the sample.
- a photodiode 12 makes it possible to synchronize a detector 13 with laser 10.
- the circuit is supplied electrically by a high voltage power supply 14 provided resistance 15.
- the data recorded are transferred to be processed by a computer 16 and represented as a function of time on a recorder graph 17.
- the laser 10 sends a wave on the target 11 causing the appearance of space charges and the modification of the distribution of the electric field which then is measured by detector 13.
- Example 4 A sample similar to that described in Example 4 is prepared but by adding to the matrix semiconductor layers, a paraffinic oil with reason 5% by weight relative to the matrix.
Landscapes
- Organic Insulating Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Conductive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Insulating Bodies (AREA)
- Installation Of Indoor Wiring (AREA)
Claims (6)
- Kabelisolierstruktur, die wenigstens eine erste, halbleitende, an die Ader des Kabels angrenzende und zu dieser koaxiale Schicht umfasst, die von einer zweiten, elektrisch isolierenden Schicht umgeben ist, die ihrerseits von einer dritten, halbleitenden Schicht bedeckt ist, dadurch gekennzeichnet, dass die besagten halbleitenden Schichten ausschließlich aus einer Matrix, die nur apolare Polymere mit einer molaren Masse von mehr als 1000 umfasst, und einem leitfähigen Füllmaterial bestehen.
- Struktur nach Anspruch 1, bei der die Komponenten der besagten Matrix eine molare Masse von mehr als 5000 haben.
- Struktur nach einem der Ansprüche 1 und 2, bei der die Matrix unter Polyethylen, Polypropylen, Polystyrol und ihren Copolymeren, Legierungen von Polymeren, die unter Polyethylen, Polypropylen, Polystyrol und ihren Copolymeren ausgewählt sind, und den Gemischen der vorgenannten Verbindungen ausgewählt ist.
- Struktur nach einem der Ansprüche 1 und 2, bei der die Matrix unter polyolefinischen thermoplastischen Elastomeren und ihren Gemischen ausgewählt ist.
- Struktur nach einem der vorhergehenden Ansprüche, bei der das besagte Füllmaterial Acetylenruß ist.
- Struktur nach einem der vorhergehenden Ansprüche, bei der die besagte Matrix außerdem vor ihrer Ausformung ein Vernetzungsmittel enthält.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9311234A FR2710447B1 (fr) | 1993-09-21 | 1993-09-21 | Structure d'isolement pour câble. |
FR9311234 | 1993-09-21 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP0644558A1 EP0644558A1 (de) | 1995-03-22 |
EP0644558B1 true EP0644558B1 (de) | 1999-06-02 |
EP0644558B2 EP0644558B2 (de) | 2003-05-28 |
Family
ID=9451076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP94402087A Expired - Lifetime EP0644558B2 (de) | 1993-09-21 | 1994-09-20 | Kabelisolierstruktur |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0644558B2 (de) |
JP (1) | JP3658018B2 (de) |
KR (1) | KR100323179B1 (de) |
CN (1) | CN1122285C (de) |
DE (1) | DE69418804T3 (de) |
DK (1) | DK0644558T4 (de) |
FR (1) | FR2710447B1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101014653B (zh) * | 2004-09-10 | 2013-10-30 | 北方技术股份有限公司 | 半导体聚合物组合物 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004178867A (ja) * | 2002-11-25 | 2004-06-24 | Mitsubishi Cable Ind Ltd | 電力ケーブル |
JP4866545B2 (ja) * | 2004-12-03 | 2012-02-01 | 株式会社フジクラ | ケーブルおよび撚合せ型ケーブル |
CH698074B1 (de) * | 2005-11-11 | 2009-05-15 | Studer Ag Draht & Kabelwerk | Mehrleiterkabel für die Übertragung von rechteckig verlaufenden Wechselströmen. |
EP2711934B1 (de) * | 2012-09-25 | 2018-07-11 | Nexans | Mehrschichtige Silikonisolierung für Elektrokabel |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54115798A (en) † | 1978-03-01 | 1979-09-08 | Fujikura Ltd | Semiconductive composition for power cable |
JPS5562610A (en) † | 1978-10-31 | 1980-05-12 | Dainichi Nippon Cables Ltd | Power cable |
JPS57126004A (en) * | 1981-01-30 | 1982-08-05 | Nippon Unicar Co Ltd | Semiconductive polyolefin composition and cable using same |
JPS57199108A (en) † | 1981-06-01 | 1982-12-07 | Showa Electric Wire & Cable Co | Crosslinked polyethylene insulated power cable |
HUT54722A (en) † | 1988-09-30 | 1991-03-28 | Exxon Chemical Patents Inc | Linear ethylene interpolymer mixtures |
JP3081218B2 (ja) * | 1990-06-22 | 2000-08-28 | 財団法人電力中央研究所 | ポリオレフィン絶縁ケーブルの半導電層界面改良方法 |
US5246783A (en) † | 1991-08-15 | 1993-09-21 | Exxon Chemical Patents Inc. | Electrical devices comprising polymeric insulating or semiconducting members |
JP4056009B2 (ja) * | 2000-01-31 | 2008-03-05 | 東芝テック株式会社 | インライン型ポンプ |
-
1993
- 1993-09-21 FR FR9311234A patent/FR2710447B1/fr not_active Expired - Lifetime
-
1994
- 1994-09-17 KR KR1019940023808A patent/KR100323179B1/ko not_active IP Right Cessation
- 1994-09-20 EP EP94402087A patent/EP0644558B2/de not_active Expired - Lifetime
- 1994-09-20 DE DE69418804T patent/DE69418804T3/de not_active Expired - Lifetime
- 1994-09-20 DK DK94402087T patent/DK0644558T4/da active
- 1994-09-20 JP JP22505494A patent/JP3658018B2/ja not_active Expired - Fee Related
- 1994-09-21 CN CN94113695A patent/CN1122285C/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101014653B (zh) * | 2004-09-10 | 2013-10-30 | 北方技术股份有限公司 | 半导体聚合物组合物 |
Also Published As
Publication number | Publication date |
---|---|
DE69418804T2 (de) | 1999-12-09 |
CN1108789A (zh) | 1995-09-20 |
CN1122285C (zh) | 2003-09-24 |
DE69418804T3 (de) | 2004-04-01 |
DK0644558T4 (da) | 2003-09-22 |
KR100323179B1 (ko) | 2002-06-27 |
DK0644558T3 (da) | 1999-12-13 |
JPH07169324A (ja) | 1995-07-04 |
FR2710447B1 (fr) | 1995-11-10 |
DE69418804D1 (de) | 1999-07-08 |
EP0644558A1 (de) | 1995-03-22 |
EP0644558B2 (de) | 2003-05-28 |
KR950009752A (ko) | 1995-04-24 |
FR2710447A1 (fr) | 1995-03-31 |
JP3658018B2 (ja) | 2005-06-08 |
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