EP0526939A1 - Transistor semi-conducteur bipolaire latéral à grille isolée - Google Patents

Transistor semi-conducteur bipolaire latéral à grille isolée Download PDF

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Publication number
EP0526939A1
EP0526939A1 EP92202313A EP92202313A EP0526939A1 EP 0526939 A1 EP0526939 A1 EP 0526939A1 EP 92202313 A EP92202313 A EP 92202313A EP 92202313 A EP92202313 A EP 92202313A EP 0526939 A1 EP0526939 A1 EP 0526939A1
Authority
EP
European Patent Office
Prior art keywords
region
adjoining
channel region
trench
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP92202313A
Other languages
German (de)
English (en)
Other versions
EP0526939B1 (fr
Inventor
Johnny Kin On Sin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV, Koninklijke Philips Electronics NV filed Critical Philips Gloeilampenfabrieken NV
Publication of EP0526939A1 publication Critical patent/EP0526939A1/fr
Application granted granted Critical
Publication of EP0526939B1 publication Critical patent/EP0526939B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side

Definitions

  • the LTGBT device construction is completed by a surface-adjoining first device region 26, referred to as anode region, which forms a p-n junction with the epitaxial layer 14.
  • Anode region 26 is located in the central portion of the epitaxial layer, and is spaced apart from the channel region 22.
  • An anode electrode A provides an electrical connection to the anode region 26.
  • the surface-adjoining anode region includes a highly-doped p-type surface-adjoining region 26, which may typically have a thickness of about 0.5 microns and a doping concentration of about 10 20 atoms/cm 3 although alternative configurations are expressly within the scope of the invention.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
EP92202313A 1991-08-07 1992-07-28 Transistor semi-conducteur bipolaire latéral à grille isolée Expired - Lifetime EP0526939B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/741,288 US5227653A (en) 1991-08-07 1991-08-07 Lateral trench-gate bipolar transistors
US741288 1991-08-07

Publications (2)

Publication Number Publication Date
EP0526939A1 true EP0526939A1 (fr) 1993-02-10
EP0526939B1 EP0526939B1 (fr) 1996-05-01

Family

ID=24980123

Family Applications (1)

Application Number Title Priority Date Filing Date
EP92202313A Expired - Lifetime EP0526939B1 (fr) 1991-08-07 1992-07-28 Transistor semi-conducteur bipolaire latéral à grille isolée

Country Status (5)

Country Link
US (1) US5227653A (fr)
EP (1) EP0526939B1 (fr)
JP (1) JP2633145B2 (fr)
KR (1) KR100278526B1 (fr)
DE (1) DE69210328T2 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0702411A3 (fr) * 1994-09-16 1997-06-04 Toshiba Kk Dispositif semi-conducteur à haute tension de claquage avec une structure de grille MOS enterrée
DE19750413A1 (de) * 1997-11-14 1999-05-20 Asea Brown Boveri Bipolartransistor mit isolierter Steuerelektrode (IGBT)
WO1999035695A1 (fr) * 1998-01-09 1999-07-15 Infineon Technologies Ag Interrupteur a haute tension a silicium sur isolant
US6072215A (en) * 1998-03-25 2000-06-06 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor device including lateral MOS element
EP2242093A1 (fr) * 2006-08-28 2010-10-20 Advanced Analogic Technologies, Inc. Transistor à tranchée latérale et son procédé de formation

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2272572B (en) * 1992-11-09 1996-07-10 Fuji Electric Co Ltd Insulated-gate bipolar transistor and process of producing the same
DE69624305T2 (de) * 1995-03-23 2003-06-26 Koninklijke Philips Electronics N.V., Eindhoven Halbleiteranordnung mit einem ligbt element
US5776813A (en) * 1997-10-06 1998-07-07 Industrial Technology Research Institute Process to manufacture a vertical gate-enhanced bipolar transistor
WO1999056323A1 (fr) * 1998-04-27 1999-11-04 Mitsubishi Denki Kabushiki Kaisha Dispositif semi-conducteur et son procede de fabrication
KR100370129B1 (ko) 2000-08-01 2003-01-30 주식회사 하이닉스반도체 반도체 소자 및 그의 제조방법
JP4290378B2 (ja) * 2002-03-28 2009-07-01 Ｎｅｃエレクトロニクス株式会社 横型パワーｍｏｓトランジスタおよびその製造方法
CN101840935B (zh) * 2010-05-17 2012-02-29 电子科技大学 Soi横向mosfet器件
CN105990408A (zh) * 2015-02-02 2016-10-05 无锡华润上华半导体有限公司 横向绝缘栅双极型晶体管
CN110459606B (zh) * 2019-08-29 2023-03-24 电子科技大学 一种具有自偏置pmos的横向沟槽型igbt及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0238749A2 (fr) * 1986-03-24 1987-09-30 SILICONIX Incorporated Dispositifs MOS unipolaires et bipolaires à grille à découpe et méthode de fabrication
EP0345380A2 (fr) * 1988-06-08 1989-12-13 Mitsubishi Denki Kabushiki Kaisha Procédé de fabrication d'un dispositif semi-conducteur
US5016067A (en) * 1988-04-11 1991-05-14 Texas Instruments Incorporated Vertical MOS transistor

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4199774A (en) * 1978-09-18 1980-04-22 The Board Of Trustees Of The Leland Stanford Junior University Monolithic semiconductor switching device
US4546367A (en) * 1982-06-21 1985-10-08 Eaton Corporation Lateral bidirectional notch FET with extended gate insulator
EP0111803B1 (fr) * 1982-12-13 1989-03-01 General Electric Company Redresseurs latéraux à porte isolée
US4963951A (en) * 1985-11-29 1990-10-16 General Electric Company Lateral insulated gate bipolar transistors with improved latch-up immunity
EP0280536B1 (fr) * 1987-02-26 1997-05-28 Kabushiki Kaisha Toshiba Technique de commande d'amorçage pour thyristor à grille isolée
DE3820677A1 (de) * 1987-07-13 1989-01-26 Bbc Brown Boveri & Cie Feldeffektgesteuertes, bipolares leistungshalbleiter-bauelement und verfahren zu dessen herstellung
US4914058A (en) * 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
US5049968A (en) * 1988-02-08 1991-09-17 Kabushiki Kaisha Toshiba Dielectrically isolated substrate and semiconductor device using the same
JP2788269B2 (ja) * 1988-02-08 1998-08-20 株式会社東芝 半導体装置およびその製造方法
US4951102A (en) * 1988-08-24 1990-08-21 Harris Corporation Trench gate VCMOS
EP0361589B1 (fr) * 1988-09-22 2001-12-19 Koninklijke Philips Electronics N.V. Transistors bipolaires latéraux à grille isolée comportant une anode fractionnée
DE68926384T2 (de) * 1988-11-29 1996-10-10 Toshiba Kawasaki Kk Lateraler Leitfähigkeitsmodulations-MOSFET
JPH0716009B2 (ja) * 1988-12-02 1995-02-22 株式会社日立製作所 横型絶縁ゲートバイポーラトランジスタ
JP2536137B2 (ja) * 1989-03-28 1996-09-18 富士電機株式会社 伝導度変調型ｍｏｓｆｅｔを備えた半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0238749A2 (fr) * 1986-03-24 1987-09-30 SILICONIX Incorporated Dispositifs MOS unipolaires et bipolaires à grille à découpe et méthode de fabrication
US5016067A (en) * 1988-04-11 1991-05-14 Texas Instruments Incorporated Vertical MOS transistor
EP0345380A2 (fr) * 1988-06-08 1989-12-13 Mitsubishi Denki Kabushiki Kaisha Procédé de fabrication d'un dispositif semi-conducteur

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0702411A3 (fr) * 1994-09-16 1997-06-04 Toshiba Kk Dispositif semi-conducteur à haute tension de claquage avec une structure de grille MOS enterrée
DE19750413A1 (de) * 1997-11-14 1999-05-20 Asea Brown Boveri Bipolartransistor mit isolierter Steuerelektrode (IGBT)
WO1999035695A1 (fr) * 1998-01-09 1999-07-15 Infineon Technologies Ag Interrupteur a haute tension a silicium sur isolant
US6072215A (en) * 1998-03-25 2000-06-06 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor device including lateral MOS element
EP2242093A1 (fr) * 2006-08-28 2010-10-20 Advanced Analogic Technologies, Inc. Transistor à tranchée latérale et son procédé de formation

Also Published As

Publication number Publication date
JPH05206159A (ja) 1993-08-13
US5227653A (en) 1993-07-13
DE69210328T2 (de) 1996-11-07
DE69210328D1 (de) 1996-06-05
KR100278526B1 (ko) 2001-02-01
KR930005238A (ko) 1993-03-23
EP0526939B1 (fr) 1996-05-01
JP2633145B2 (ja) 1997-07-23

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