EP0526939A1 - Transistor semi-conducteur bipolaire latéral à grille isolée - Google Patents
Transistor semi-conducteur bipolaire latéral à grille isolée Download PDFInfo
- Publication number
- EP0526939A1 EP0526939A1 EP92202313A EP92202313A EP0526939A1 EP 0526939 A1 EP0526939 A1 EP 0526939A1 EP 92202313 A EP92202313 A EP 92202313A EP 92202313 A EP92202313 A EP 92202313A EP 0526939 A1 EP0526939 A1 EP 0526939A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- region
- adjoining
- channel region
- trench
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 239000010410 layer Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000002344 surface layer Substances 0.000 claims abstract description 11
- 239000004020 conductor Substances 0.000 claims description 2
- 230000001939 inductive effect Effects 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7398—Vertical transistors, e.g. vertical IGBT with both emitter and collector contacts in the same substrate side
Definitions
- the LTGBT device construction is completed by a surface-adjoining first device region 26, referred to as anode region, which forms a p-n junction with the epitaxial layer 14.
- Anode region 26 is located in the central portion of the epitaxial layer, and is spaced apart from the channel region 22.
- An anode electrode A provides an electrical connection to the anode region 26.
- the surface-adjoining anode region includes a highly-doped p-type surface-adjoining region 26, which may typically have a thickness of about 0.5 microns and a doping concentration of about 10 20 atoms/cm 3 although alternative configurations are expressly within the scope of the invention.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/741,288 US5227653A (en) | 1991-08-07 | 1991-08-07 | Lateral trench-gate bipolar transistors |
US741288 | 1991-08-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0526939A1 true EP0526939A1 (fr) | 1993-02-10 |
EP0526939B1 EP0526939B1 (fr) | 1996-05-01 |
Family
ID=24980123
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP92202313A Expired - Lifetime EP0526939B1 (fr) | 1991-08-07 | 1992-07-28 | Transistor semi-conducteur bipolaire latéral à grille isolée |
Country Status (5)
Country | Link |
---|---|
US (1) | US5227653A (fr) |
EP (1) | EP0526939B1 (fr) |
JP (1) | JP2633145B2 (fr) |
KR (1) | KR100278526B1 (fr) |
DE (1) | DE69210328T2 (fr) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0702411A3 (fr) * | 1994-09-16 | 1997-06-04 | Toshiba Kk | Dispositif semi-conducteur à haute tension de claquage avec une structure de grille MOS enterrée |
DE19750413A1 (de) * | 1997-11-14 | 1999-05-20 | Asea Brown Boveri | Bipolartransistor mit isolierter Steuerelektrode (IGBT) |
WO1999035695A1 (fr) * | 1998-01-09 | 1999-07-15 | Infineon Technologies Ag | Interrupteur a haute tension a silicium sur isolant |
US6072215A (en) * | 1998-03-25 | 2000-06-06 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Semiconductor device including lateral MOS element |
EP2242093A1 (fr) * | 2006-08-28 | 2010-10-20 | Advanced Analogic Technologies, Inc. | Transistor à tranchée latérale et son procédé de formation |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2272572B (en) * | 1992-11-09 | 1996-07-10 | Fuji Electric Co Ltd | Insulated-gate bipolar transistor and process of producing the same |
DE69624305T2 (de) * | 1995-03-23 | 2003-06-26 | Koninklijke Philips Electronics N.V., Eindhoven | Halbleiteranordnung mit einem ligbt element |
US5776813A (en) * | 1997-10-06 | 1998-07-07 | Industrial Technology Research Institute | Process to manufacture a vertical gate-enhanced bipolar transistor |
WO1999056323A1 (fr) * | 1998-04-27 | 1999-11-04 | Mitsubishi Denki Kabushiki Kaisha | Dispositif semi-conducteur et son procede de fabrication |
KR100370129B1 (ko) | 2000-08-01 | 2003-01-30 | 주식회사 하이닉스반도체 | 반도체 소자 및 그의 제조방법 |
JP4290378B2 (ja) * | 2002-03-28 | 2009-07-01 | Necエレクトロニクス株式会社 | 横型パワーmosトランジスタおよびその製造方法 |
CN101840935B (zh) * | 2010-05-17 | 2012-02-29 | 电子科技大学 | Soi横向mosfet器件 |
CN105990408A (zh) * | 2015-02-02 | 2016-10-05 | 无锡华润上华半导体有限公司 | 横向绝缘栅双极型晶体管 |
CN110459606B (zh) * | 2019-08-29 | 2023-03-24 | 电子科技大学 | 一种具有自偏置pmos的横向沟槽型igbt及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0238749A2 (fr) * | 1986-03-24 | 1987-09-30 | SILICONIX Incorporated | Dispositifs MOS unipolaires et bipolaires à grille à découpe et méthode de fabrication |
EP0345380A2 (fr) * | 1988-06-08 | 1989-12-13 | Mitsubishi Denki Kabushiki Kaisha | Procédé de fabrication d'un dispositif semi-conducteur |
US5016067A (en) * | 1988-04-11 | 1991-05-14 | Texas Instruments Incorporated | Vertical MOS transistor |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4199774A (en) * | 1978-09-18 | 1980-04-22 | The Board Of Trustees Of The Leland Stanford Junior University | Monolithic semiconductor switching device |
US4546367A (en) * | 1982-06-21 | 1985-10-08 | Eaton Corporation | Lateral bidirectional notch FET with extended gate insulator |
EP0111803B1 (fr) * | 1982-12-13 | 1989-03-01 | General Electric Company | Redresseurs latéraux à porte isolée |
US4963951A (en) * | 1985-11-29 | 1990-10-16 | General Electric Company | Lateral insulated gate bipolar transistors with improved latch-up immunity |
EP0280536B1 (fr) * | 1987-02-26 | 1997-05-28 | Kabushiki Kaisha Toshiba | Technique de commande d'amorçage pour thyristor à grille isolée |
DE3820677A1 (de) * | 1987-07-13 | 1989-01-26 | Bbc Brown Boveri & Cie | Feldeffektgesteuertes, bipolares leistungshalbleiter-bauelement und verfahren zu dessen herstellung |
US4914058A (en) * | 1987-12-29 | 1990-04-03 | Siliconix Incorporated | Grooved DMOS process with varying gate dielectric thickness |
US5049968A (en) * | 1988-02-08 | 1991-09-17 | Kabushiki Kaisha Toshiba | Dielectrically isolated substrate and semiconductor device using the same |
JP2788269B2 (ja) * | 1988-02-08 | 1998-08-20 | 株式会社東芝 | 半導体装置およびその製造方法 |
US4951102A (en) * | 1988-08-24 | 1990-08-21 | Harris Corporation | Trench gate VCMOS |
EP0361589B1 (fr) * | 1988-09-22 | 2001-12-19 | Koninklijke Philips Electronics N.V. | Transistors bipolaires latéraux à grille isolée comportant une anode fractionnée |
DE68926384T2 (de) * | 1988-11-29 | 1996-10-10 | Toshiba Kawasaki Kk | Lateraler Leitfähigkeitsmodulations-MOSFET |
JPH0716009B2 (ja) * | 1988-12-02 | 1995-02-22 | 株式会社日立製作所 | 横型絶縁ゲートバイポーラトランジスタ |
JP2536137B2 (ja) * | 1989-03-28 | 1996-09-18 | 富士電機株式会社 | 伝導度変調型mosfetを備えた半導体装置 |
-
1991
- 1991-08-07 US US07/741,288 patent/US5227653A/en not_active Expired - Fee Related
-
1992
- 1992-07-28 EP EP92202313A patent/EP0526939B1/fr not_active Expired - Lifetime
- 1992-07-28 DE DE69210328T patent/DE69210328T2/de not_active Expired - Fee Related
- 1992-08-04 JP JP4208104A patent/JP2633145B2/ja not_active Expired - Fee Related
- 1992-08-07 KR KR1019920014158A patent/KR100278526B1/ko not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0238749A2 (fr) * | 1986-03-24 | 1987-09-30 | SILICONIX Incorporated | Dispositifs MOS unipolaires et bipolaires à grille à découpe et méthode de fabrication |
US5016067A (en) * | 1988-04-11 | 1991-05-14 | Texas Instruments Incorporated | Vertical MOS transistor |
EP0345380A2 (fr) * | 1988-06-08 | 1989-12-13 | Mitsubishi Denki Kabushiki Kaisha | Procédé de fabrication d'un dispositif semi-conducteur |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0702411A3 (fr) * | 1994-09-16 | 1997-06-04 | Toshiba Kk | Dispositif semi-conducteur à haute tension de claquage avec une structure de grille MOS enterrée |
DE19750413A1 (de) * | 1997-11-14 | 1999-05-20 | Asea Brown Boveri | Bipolartransistor mit isolierter Steuerelektrode (IGBT) |
WO1999035695A1 (fr) * | 1998-01-09 | 1999-07-15 | Infineon Technologies Ag | Interrupteur a haute tension a silicium sur isolant |
US6072215A (en) * | 1998-03-25 | 2000-06-06 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Semiconductor device including lateral MOS element |
EP2242093A1 (fr) * | 2006-08-28 | 2010-10-20 | Advanced Analogic Technologies, Inc. | Transistor à tranchée latérale et son procédé de formation |
Also Published As
Publication number | Publication date |
---|---|
JPH05206159A (ja) | 1993-08-13 |
US5227653A (en) | 1993-07-13 |
DE69210328T2 (de) | 1996-11-07 |
DE69210328D1 (de) | 1996-06-05 |
KR100278526B1 (ko) | 2001-02-01 |
KR930005238A (ko) | 1993-03-23 |
EP0526939B1 (fr) | 1996-05-01 |
JP2633145B2 (ja) | 1997-07-23 |
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