DK1595006T3 - Apparat og fremgangsmåde til fremstilling af en enkeltkrystalstang - Google Patents
Apparat og fremgangsmåde til fremstilling af en enkeltkrystalstangInfo
- Publication number
- DK1595006T3 DK1595006T3 DK04708718T DK04708718T DK1595006T3 DK 1595006 T3 DK1595006 T3 DK 1595006T3 DK 04708718 T DK04708718 T DK 04708718T DK 04708718 T DK04708718 T DK 04708718T DK 1595006 T3 DK1595006 T3 DK 1595006T3
- Authority
- DK
- Denmark
- Prior art keywords
- feed rod
- rod
- feed
- energy supply
- chamber
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/32—Mechanisms for moving either the charge or the heater
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1056—Seed pulling including details of precursor replenishment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Liquid Crystal (AREA)
- Liquid Crystal Substances (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DKPA200300193 | 2003-02-11 | ||
EP04708718A EP1595006B1 (de) | 2003-02-11 | 2004-02-06 | Vorrichtung und verfahren zur herstellung eines einkristallstabs |
Publications (1)
Publication Number | Publication Date |
---|---|
DK1595006T3 true DK1595006T3 (da) | 2006-11-06 |
Family
ID=32864870
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK04708718T DK1595006T3 (da) | 2003-02-11 | 2004-02-06 | Apparat og fremgangsmåde til fremstilling af en enkeltkrystalstang |
Country Status (8)
Country | Link |
---|---|
US (1) | US7335257B2 (de) |
EP (1) | EP1595006B1 (de) |
JP (1) | JP5122128B2 (de) |
CN (1) | CN1328416C (de) |
AT (1) | ATE332990T1 (de) |
DE (1) | DE602004001510T2 (de) |
DK (1) | DK1595006T3 (de) |
WO (1) | WO2004072333A1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4784401B2 (ja) * | 2006-05-30 | 2011-10-05 | 株式会社Sumco | シリコン単結晶の育成プロセスにおける融液の液面位置監視装置 |
JP5296992B2 (ja) * | 2007-01-31 | 2013-09-25 | Sumco Techxiv株式会社 | シリコン結晶素材及びその製造方法 |
DE102009005837B4 (de) * | 2009-01-21 | 2011-10-06 | Pv Silicon Forschungs Und Produktions Gmbh | Verfahren und Vorrichtung zur Herstellung von Siliziumdünnstäben |
CA2795395C (en) | 2010-04-13 | 2018-05-29 | Schmid Silicon Technology Gmbh | Production of monocrystalline semiconductor materials |
DE102010015354A1 (de) | 2010-04-13 | 2011-10-13 | Schmid Silicon Technology Gmbh | Herstellung eines kristallinen Halbleiterwerkstoffs |
DE102010021004A1 (de) | 2010-05-14 | 2011-11-17 | Schmid Silicon Technology Gmbh | Herstellung von monokristallinen Halbleiterwerkstoffen |
CN103820847B (zh) * | 2012-11-16 | 2016-06-15 | 有研半导体材料有限公司 | 一种区熔法生长大尺寸硅单晶用温度梯度控制装置及方法 |
JP5679361B2 (ja) * | 2013-04-08 | 2015-03-04 | Sumco Techxiv株式会社 | シリコン結晶素材及びその製造方法 |
JP5679362B2 (ja) * | 2013-04-08 | 2015-03-04 | Sumco Techxiv株式会社 | シリコン結晶素材及びその製造方法 |
CN103993352A (zh) * | 2014-04-18 | 2014-08-20 | 洛阳金诺机械工程有限公司 | 一种使籽晶转动的硅芯拉制方法 |
JP6269397B2 (ja) * | 2014-09-05 | 2018-01-31 | 信越半導体株式会社 | 半導体単結晶棒の製造装置及び製造方法 |
CN105002553B (zh) * | 2015-07-29 | 2017-07-04 | 哈尔滨工业大学(威海) | 真空环境中使用的环形电子束无坩埚区域熔炼装置 |
DE102016214581A1 (de) * | 2016-08-05 | 2018-02-08 | Siltronic Ag | Verfahren zur Herstellung eines Einkristalls durch Zonenschmelzen |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1272886B (de) * | 1966-09-24 | 1968-07-18 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes |
ATE55424T1 (de) * | 1984-09-04 | 1990-08-15 | Forschungszentrum Juelich Gmbh | Verfahren zur herstellung eines kristallinen koerpers aus der schmelze. |
US4866230A (en) * | 1987-04-27 | 1989-09-12 | Shin-Etu Handotai Company, Limited | Method of and apparatus for controlling floating zone of semiconductor rod |
JPH0651598B2 (ja) * | 1987-04-27 | 1994-07-06 | 信越半導体株式会社 | 半導体棒浮遊熔融帯域制御方法 |
JP2685242B2 (ja) * | 1988-09-12 | 1997-12-03 | 株式会社クボタ | 金属管内面のモルタルライニング方法 |
JPH03257091A (ja) * | 1990-03-07 | 1991-11-15 | Nec Corp | 結晶成長装置 |
JP2874722B2 (ja) * | 1993-06-18 | 1999-03-24 | 信越半導体株式会社 | シリコン単結晶の成長方法及び装置 |
JPH0748200A (ja) * | 1993-08-04 | 1995-02-21 | Natl Space Dev Agency Japan<Nasda> | 単結晶の製造方法 |
JPH0977588A (ja) * | 1995-09-13 | 1997-03-25 | Komatsu Electron Metals Co Ltd | 浮遊帯域溶融法における晶出結晶径の自動制御方法およびその装置 |
DE19610650B4 (de) * | 1996-03-06 | 2004-03-18 | Forschungsverbund Berlin E.V. | Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterialstäben |
JP4016363B2 (ja) * | 1998-07-28 | 2007-12-05 | 信越半導体株式会社 | 浮遊溶融帯域制御装置及び制御方法 |
AU5966600A (en) * | 1999-07-19 | 2001-02-05 | Topsil Semiconductor Materials A/S | Method and apparatus for production of a doped feed rod by ion implantation |
EP1088912A1 (de) * | 1999-09-28 | 2001-04-04 | Forschungsverbund Berlin e.V. | Züchtung von Verbindungs- oder Legierungskristallen in einer Lösung einer tiegelfreier Zonenschmelze |
-
2004
- 2004-02-06 CN CNB200480004015XA patent/CN1328416C/zh not_active Expired - Lifetime
- 2004-02-06 DE DE602004001510T patent/DE602004001510T2/de not_active Expired - Lifetime
- 2004-02-06 AT AT04708718T patent/ATE332990T1/de not_active IP Right Cessation
- 2004-02-06 US US10/545,187 patent/US7335257B2/en not_active Expired - Lifetime
- 2004-02-06 DK DK04708718T patent/DK1595006T3/da active
- 2004-02-06 WO PCT/DK2004/000087 patent/WO2004072333A1/en active IP Right Grant
- 2004-02-06 EP EP04708718A patent/EP1595006B1/de not_active Expired - Lifetime
- 2004-02-06 JP JP2006501522A patent/JP5122128B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ATE332990T1 (de) | 2006-08-15 |
WO2004072333A1 (en) | 2004-08-26 |
JP2006517173A (ja) | 2006-07-20 |
US7335257B2 (en) | 2008-02-26 |
EP1595006B1 (de) | 2006-07-12 |
CN1748049A (zh) | 2006-03-15 |
CN1328416C (zh) | 2007-07-25 |
US20060191471A1 (en) | 2006-08-31 |
DE602004001510D1 (de) | 2006-08-24 |
DE602004001510T2 (de) | 2007-07-26 |
JP5122128B2 (ja) | 2013-01-16 |
EP1595006A1 (de) | 2005-11-16 |
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