CN103820847B - 一种区熔法生长大尺寸硅单晶用温度梯度控制装置及方法 - Google Patents
一种区熔法生长大尺寸硅单晶用温度梯度控制装置及方法 Download PDFInfo
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- CN103820847B CN103820847B CN201210465698.5A CN201210465698A CN103820847B CN 103820847 B CN103820847 B CN 103820847B CN 201210465698 A CN201210465698 A CN 201210465698A CN 103820847 B CN103820847 B CN 103820847B
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CN103820847B true CN103820847B (zh) | 2016-06-15 |
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CN108193262A (zh) * | 2016-12-08 | 2018-06-22 | 有研半导体材料有限公司 | 一种用于拉制区熔单晶硅的反射器 |
Citations (7)
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JPS60103095A (ja) * | 1983-11-07 | 1985-06-07 | Seiko Epson Corp | 単結晶の製造方法 |
CN1425808A (zh) * | 2001-12-12 | 2003-06-25 | 中国科学院物理研究所 | 遥控晶体生长装置及其控制方法 |
CN1748049A (zh) * | 2003-02-11 | 2006-03-15 | 托普西尔半导体原料公司 | 用于制造单晶棒的设备和方法 |
CN101748477A (zh) * | 2008-12-19 | 2010-06-23 | 北京太克易航科贸有限公司 | 用于单晶硅生长过程控制的智能pid控制方法及其*** |
CN201857439U (zh) * | 2010-08-23 | 2011-06-08 | 上海卡姆丹克太阳能科技有限公司 | 一种单晶生长热***的煅烧处理装置 |
CN102321913A (zh) * | 2011-10-11 | 2012-01-18 | 天津市环欧半导体材料技术有限公司 | 一种拉制8英寸区熔硅单晶热***及工艺 |
CN102358951A (zh) * | 2011-10-11 | 2012-02-22 | 天津市环欧半导体材料技术有限公司 | 一种生产φ6英寸区熔气掺硅单晶的热***及工艺 |
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS60103095A (ja) * | 1983-11-07 | 1985-06-07 | Seiko Epson Corp | 単結晶の製造方法 |
CN1425808A (zh) * | 2001-12-12 | 2003-06-25 | 中国科学院物理研究所 | 遥控晶体生长装置及其控制方法 |
CN1748049A (zh) * | 2003-02-11 | 2006-03-15 | 托普西尔半导体原料公司 | 用于制造单晶棒的设备和方法 |
CN101748477A (zh) * | 2008-12-19 | 2010-06-23 | 北京太克易航科贸有限公司 | 用于单晶硅生长过程控制的智能pid控制方法及其*** |
CN201857439U (zh) * | 2010-08-23 | 2011-06-08 | 上海卡姆丹克太阳能科技有限公司 | 一种单晶生长热***的煅烧处理装置 |
CN102321913A (zh) * | 2011-10-11 | 2012-01-18 | 天津市环欧半导体材料技术有限公司 | 一种拉制8英寸区熔硅单晶热***及工艺 |
CN102358951A (zh) * | 2011-10-11 | 2012-02-22 | 天津市环欧半导体材料技术有限公司 | 一种生产φ6英寸区熔气掺硅单晶的热***及工艺 |
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