DE69610522T2 - Oberflächenemittierender Laser mit verbessertem Wirkungsgrad - Google Patents
Oberflächenemittierender Laser mit verbessertem WirkungsgradInfo
- Publication number
- DE69610522T2 DE69610522T2 DE69610522T DE69610522T DE69610522T2 DE 69610522 T2 DE69610522 T2 DE 69610522T2 DE 69610522 T DE69610522 T DE 69610522T DE 69610522 T DE69610522 T DE 69610522T DE 69610522 T2 DE69610522 T2 DE 69610522T2
- Authority
- DE
- Germany
- Prior art keywords
- emitting laser
- surface emitting
- improved efficiency
- efficiency
- improved
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/417,308 US5513203A (en) | 1995-04-05 | 1995-04-05 | Surface emitting laser having improved pumping efficiency |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69610522D1 DE69610522D1 (de) | 2000-11-09 |
DE69610522T2 true DE69610522T2 (de) | 2001-03-22 |
Family
ID=23653431
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69610522T Expired - Fee Related DE69610522T2 (de) | 1995-04-05 | 1996-03-26 | Oberflächenemittierender Laser mit verbessertem Wirkungsgrad |
Country Status (6)
Country | Link |
---|---|
US (1) | US5513203A (de) |
EP (1) | EP0742619B1 (de) |
JP (1) | JP3121761B2 (de) |
CA (1) | CA2171997C (de) |
DE (1) | DE69610522T2 (de) |
TW (1) | TW311295B (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6243407B1 (en) | 1997-03-21 | 2001-06-05 | Novalux, Inc. | High power laser devices |
US6341138B1 (en) | 1999-06-16 | 2002-01-22 | Gore Enterprise Holdings, Inc. | Constant temperature performance laser |
US6625195B1 (en) * | 1999-07-20 | 2003-09-23 | Joseph Reid Henrichs | Vertical cavity surface emitting laser that uses intracavity degenerate four wave mixing to produce phase-conjugated and distortion free collimated laser light |
WO2001078204A1 (en) * | 2000-04-07 | 2001-10-18 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Optical pumping injection cavity for optically pumped devices |
JP3829594B2 (ja) * | 2000-06-30 | 2006-10-04 | セイコーエプソン株式会社 | 素子実装方法と光伝送装置 |
GB2369929A (en) * | 2000-12-08 | 2002-06-12 | Univ Southampton | Semiconductor laser device |
DE10241192A1 (de) * | 2002-09-05 | 2004-03-11 | Osram Opto Semiconductors Gmbh | Optisch gepumpte strahlungsemittierende Halbleitervorrichtung und Verfahren zu deren Herstellung |
TWI282650B (en) * | 2002-10-11 | 2007-06-11 | Eastman Kodak Co | Organic vertical cavity lasing devices having organic active region |
GB2399942A (en) * | 2003-03-24 | 2004-09-29 | Univ Strathclyde | Vertical cavity semiconductor optical devices |
GB2399941A (en) * | 2003-03-24 | 2004-09-29 | Univ Strathclyde | Vertical cavity semiconductor optical devices |
US6836495B2 (en) * | 2003-05-07 | 2004-12-28 | Eastman Kodak Company | Vertical cavity laser including inorganic spacer layers |
US6939012B2 (en) * | 2003-06-02 | 2005-09-06 | Eastman Kodak Company | Laser image projector |
JP5214140B2 (ja) * | 2006-12-12 | 2013-06-19 | 浜松ホトニクス株式会社 | 半導体発光素子 |
JP5112910B2 (ja) * | 2008-02-27 | 2013-01-09 | オリンパス株式会社 | 保持具 |
WO2012068563A1 (en) * | 2010-11-19 | 2012-05-24 | Trilumina Corporation | Optical pumping of solid-state laser material using addressable laser array |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4395769A (en) * | 1981-03-03 | 1983-07-26 | Bell Telephone Laboratories, Incorporated | Tunable semiconductor laser |
US4718070A (en) * | 1985-01-22 | 1988-01-05 | Massachusetts Institute Of Technology | Surface emitting diode laser |
US4881236A (en) * | 1988-04-22 | 1989-11-14 | University Of New Mexico | Wavelength-resonant surface-emitting semiconductor laser |
US4999842A (en) * | 1989-03-01 | 1991-03-12 | At&T Bell Laboratories | Quantum well vertical cavity laser |
US4949350A (en) * | 1989-07-17 | 1990-08-14 | Bell Communications Research, Inc. | Surface emitting semiconductor laser |
US5034344A (en) * | 1989-07-17 | 1991-07-23 | Bell Communications Research, Inc. | Method of making a surface emitting semiconductor laser |
FR2681737A1 (fr) * | 1991-09-24 | 1993-03-26 | Thomson Csf | Source monofrequence de puissance a fibre optique. |
US5206872A (en) * | 1991-11-01 | 1993-04-27 | At&T Bell Laboratories | Surface emitting laser |
US5258990A (en) * | 1991-11-07 | 1993-11-02 | The United States Of America As Represented By The Secretary Of The United States Department Of Energy | Visible light surface emitting semiconductor laser |
-
1995
- 1995-04-05 US US08/417,308 patent/US5513203A/en not_active Expired - Lifetime
-
1996
- 1996-03-18 CA CA002171997A patent/CA2171997C/en not_active Expired - Fee Related
- 1996-03-26 DE DE69610522T patent/DE69610522T2/de not_active Expired - Fee Related
- 1996-03-26 EP EP96302076A patent/EP0742619B1/de not_active Expired - Lifetime
- 1996-04-04 JP JP08082430A patent/JP3121761B2/ja not_active Expired - Fee Related
- 1996-04-10 TW TW085104242A patent/TW311295B/zh active
Also Published As
Publication number | Publication date |
---|---|
DE69610522D1 (de) | 2000-11-09 |
EP0742619B1 (de) | 2000-10-04 |
EP0742619A2 (de) | 1996-11-13 |
JPH08340149A (ja) | 1996-12-24 |
EP0742619A3 (de) | 1997-07-23 |
CA2171997C (en) | 1999-11-09 |
CA2171997A1 (en) | 1996-10-06 |
JP3121761B2 (ja) | 2001-01-09 |
US5513203A (en) | 1996-04-30 |
TW311295B (de) | 1997-07-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |