EP0742619A2 - Oberflächenemittierender Laser mit verbessertem Wirkungsgrad - Google Patents

Oberflächenemittierender Laser mit verbessertem Wirkungsgrad Download PDF

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Publication number
EP0742619A2
EP0742619A2 EP96302076A EP96302076A EP0742619A2 EP 0742619 A2 EP0742619 A2 EP 0742619A2 EP 96302076 A EP96302076 A EP 96302076A EP 96302076 A EP96302076 A EP 96302076A EP 0742619 A2 EP0742619 A2 EP 0742619A2
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EP
European Patent Office
Prior art keywords
laser
mirror
bandwidths
gain medium
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP96302076A
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English (en)
French (fr)
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EP0742619A3 (de
EP0742619B1 (de
Inventor
Theodoor Charlouis Damen
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AT&T Corp
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AT&T Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Definitions

  • the present invention relates generally to surface emitting lasers and more particularly to a surface emitting laser having improved pumping efficiency.
  • Lasers emit laser radiation in a direction perpendicular to the substrate surface.
  • Such lasers have numerous advantages over edge-emitting lasers, including their extremely small size and the relative ease with which a great number of such lasers can be fabricated in a two-dimensional array on a single substrate.
  • Known surface emitting lasers include a resonant cavity defined by two distributed feedback (DFB) mirrors.
  • the cavity contains a gain medium comprising spacer layers and active, optically emitting layers.
  • Optical pumping of the active layers is achieved by transmitted pump energy through one of the mirrors.
  • the reflectance of the mirrors is typically reduced at the pump energy wavelength. While this decrease in reflectivity enhances the transmission of the pump energy into the cavity, it also limits the time the pump energy will resonate within the cavity before being transmitted back through one of the DFB mirrors. As a result, the pump energy has a limited opportunity to induce population inversion prior to being transmitted back out of the cavity, thus limiting the efficiency of the laser.
  • a surface emitting laser includes a substrate, a first distributed feedback mirror formed on the substrate, and an active gain medium formed on the first mirror.
  • the active gain medium includes at least one active, optically emitting layer and one barrier layer.
  • a second distributed feedback mirror is formed on the active gain medium.
  • the first and second mirrors define a resonant cavity for supporting a standing wave optical field at a designed wavelength of operation
  • the first and second mirrors have first and second reflective bandwidths that respectively include first and second transmissive bandwidths for receiving optical pumping energy.
  • the first and second reflective bandwidths are shifted in wavelength relative to one another so that the first and second transmissive bandwidths are located at distinct wavelengths.
  • the inventive laser is fast with less lossy energy transfer and it can operate at room temperature without being cooled.
  • FIG. 1 shows a cross-sectional view of a surface emitting laser.
  • FIG. 2 shows a perspective view of a monolithic array of surface emitting lasers.
  • FIG. 3(a) shows a reflectivity curve for the top distributed feedback mirror and FIG. 3(b) shows a reflectivity curve for the bottom distributed feedback mirror which are employed in the surface emitting laser of the present invention.
  • FIG. 4 shows one embodiment of the surface emitting laser constructed in accordance with the present invention.
  • FIG. 1 depicts an optically pumped surface emitting laser 2.
  • a lens 10 directs incoming radiation through substrate 12 transparent to the radiation and thereafter through distributed feedback (DFB) mirror 13. If the substrate is not transparent to the radiation pumping is performed through the top of the laser 2 rather than through the substrate.
  • the DFB mirror 13 is formed from alternating pairs of high and low refractive index material. Radiation is thereafter introduced into gain medium 16, which is formed from alternating layers of active material and barrier material.
  • the laser is completed by DFB mirror 19 which is also formed from alternating pairs of high and low refractive index material. In the arrangement shown, the emitted lasing beam emerges vertically upward as shown by the arrows.
  • FIG. 2 depicts a monolithic array of lasers 2 which are individually similar in composition to the laser shown in FIG. 1.
  • the lasers 2 are all formed on a single substrate.
  • Such arrays are useful as optical interconnects for integrated circuitry and as sources for optical pumping of solid state lasers.
  • top and bottom mirrors 19 and 13 form a resonant cavity which supports a standing wave optical field at the designed wavelength of operation.
  • the total thickness of the gain medium 16 is selected to be an integral multiple of one half the designed wavelength.
  • the thickness of the active and barrier layers may be advantageously chosen so that the active layers coincide with the antinodes (i.e. intensity maxima) of the standing wave. This arrangement ensures that the active layers amplify the optical wave as efficiently as possible.
  • the general structure and composition of the device shown in FIG. 1 is well-known to those skilled in art.
  • the present invention does not depend on designation of appropriate lasing compositions.
  • the selected materials must have properties known to be appropriate for operation.
  • Active material must have a direct energy bandgap suitable for the desired radiation wavelength, and must otherwise be suitable for lasing.
  • Barrier material a direct or indirect bandgap material, has a higher energy gap and serves to confine carriers within the active material.
  • appropriate direct bandgap materials include the compound semiconductors such as selected materials of the III-V, the II-VI and the ternaries, quaternaries, as well as other complex compositions.
  • Illustrative active material and barrier material pairs that may be employed include GaAs/ AlGaAs, In 0 .
  • the device may be constructed by any appropriate technique such as MBE or MOCVD, for example.
  • the device may also be constructed with a wedge-shaped laser cavity such as disclosed in U.S. Patent No. 4,395,769.
  • FIG. 3 shows the reflectivity curve for the top mirror 19, which illustrates the mirror's reflectivity as a function of wavelength.
  • the mirror 19 is configured as in the conventional manner to have maximum reflectivity at the designed wavelength of operation, which in the example shown in FIG. 3 is approximately 870 nm. This maximum reflectivity is approximately maintained over a prescribed bandwidth that encompasses the designed wavelength.
  • the prescribed high reflectivity bandwidth is disturbed by a "notch" 30 defining a relatively narrow bandpass over which the reflectivity decreases substantially. That is, the notch 30 defines a bandwidth over which the mirror 19 transmits a significant amount of optical energy.
  • Known surface emitting lasers employ top and bottom mirrors that have substantially identical normalized reflectivity curves such as shown in FIG. 3. That is, both mirrors typically employ the same high reflectivity bandwidth and both employ a "notch" at the same wavelength defining a region of higher transmission.
  • This known configuration limits the efficiency of the laser because a significant portion of the pump energy that is not absorbed by the gain medium 16 will be transmitted through the notch in the bottom mirror and hence will be unavailable to induce additional population inversion.
  • the top and bottom mirrors 13 and 19 are configured so that their reflectivity curves are shifted in wavelength relative to one another. That is, the reflectivity curves are displaced so that the notch in the top mirror is located at a different wavelength from the notch in the bottom mirror.
  • This arrangement is indicated by the displacement of the reflectivity curve for the top mirror shown in FIG. 3(a) relative to the reflectivity curve for the bottom mirror shown in FIG. 3(b).
  • the curves are displaced so that the notch in the top mirror is located at a wavelength at which the bottom mirror exhibits relatively high reflectivity.
  • a substantial portion of the pump energy transmitted through the notch in the top mirror is reflected from the bottom mirror back up through the gain medium 16.
  • the reflected pump energy then traverses the gain medium 16 for a second time, increasing its opportunity to induce population inversion. For example, if 50% of the pump energy is absorbed upon a single pass through the gain medium, then by increasing the reflectivity of the bottom mirror, 75 % of the pump energy will be absorbed upon traversing the gain medium 16 for a second time. By contrast, in known surface emitting lasers most of the pump energy has only a single opportunity to be absorbed by the gain medium 16.
  • the optimal shift in the reflectivity curves for the top and bottom mirrors may be individually tailored for each particular device application. However some general considerations are appropriate independent of any particular application. For example, the relative shift should be sufficiently small so that that there is substantial overlap between the high reflectivity bandwidths of the top and bottom mirrors. This criteria ensures that a standing wave will be supported at the designed wavelength. For instance, a shift approximately equal to one-third of the high reflectivity bandwidth often will be appropriate. If the relative shift is too great one of the mirrors will have a reflectivity at the designed wavelength which is too low to efficiently support a standing wave.
  • the gain medium 16 may be advantageously chosen so that approximately 50% of the pump energy is absorbed when traversing the gain medium for the first time. As noted above, this will cause approximately 75% of the pump energy to be absorbed after traversing the gain medium 16 twice. If substantially more than 50% of the pump energy is absorbed on the first pass, population inversion will occur in a nonuniform manner.
  • FIG. 4 shows one particular embodiment of the inventive laser designed to operate at a wavelength of 870 nm.
  • the top mirror 19 is formed from 25 pairs of alternating layers of Al 0.11 Ga 0.89 As (737 ⁇ ) and AlAs (625 ⁇ ) and the bottom mirror is formed from 29.5 pairs of Al 0.11 Ga 0.89 As (719 ⁇ ) and AlAs (608 ⁇ ).
  • the gain medium is formed from three active layers of GaAs (609 ⁇ ) each separated by barrier layers of Al 0.11 Ga 0.89 As (625 ⁇ ).
  • a barrier layer of Al 0.11 Ga 0.89 As (312 ⁇ ) is interposed between the active layers and each of the mirrors 13 and 19. The active layers are located at the antinodes of the standing wave supported between the mirrors 13 and 19 to maximize efficiency.
  • the high reflectivity bandwidth of the bottom mirror 13 is shifted by approximately 14 nm relative to the top mirror 19.
  • the mirrors 13 and 19 are also "unbalanced," as this term is defined in U.S. Patent No. 4,999,842, for example. That is, the bottom mirror 13 employs a greater number of alternating layers than the top mirror 19. As a result, the reflectivity of the bottom mirror 13 is greater than the reflectivity of the top mirror 19 at the design wavelength.
  • the optical output beam will be emitted from the top mirror 19 because of its decreased reflectivity relative to the bottom mirror 13.
  • the notch in the top mirror 19 is fully transmitting at the pump wavelength and is only 40-50 meV higher than the cavity mode wavelength, which is within the homogenous line width of the gain medium 16. As a result the laser is faster, more efficient with even coherent energy transfer, all of which decreases non-radiative losses.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
EP96302076A 1995-04-05 1996-03-26 Oberflächenemittierender Laser mit verbessertem Wirkungsgrad Expired - Lifetime EP0742619B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/417,308 US5513203A (en) 1995-04-05 1995-04-05 Surface emitting laser having improved pumping efficiency
US417308 1995-04-05

Publications (3)

Publication Number Publication Date
EP0742619A2 true EP0742619A2 (de) 1996-11-13
EP0742619A3 EP0742619A3 (de) 1997-07-23
EP0742619B1 EP0742619B1 (de) 2000-10-04

Family

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EP96302076A Expired - Lifetime EP0742619B1 (de) 1995-04-05 1996-03-26 Oberflächenemittierender Laser mit verbessertem Wirkungsgrad

Country Status (6)

Country Link
US (1) US5513203A (de)
EP (1) EP0742619B1 (de)
JP (1) JP3121761B2 (de)
CA (1) CA2171997C (de)
DE (1) DE69610522T2 (de)
TW (1) TW311295B (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6243407B1 (en) 1997-03-21 2001-06-05 Novalux, Inc. High power laser devices
US6341138B1 (en) 1999-06-16 2002-01-22 Gore Enterprise Holdings, Inc. Constant temperature performance laser
US6625195B1 (en) * 1999-07-20 2003-09-23 Joseph Reid Henrichs Vertical cavity surface emitting laser that uses intracavity degenerate four wave mixing to produce phase-conjugated and distortion free collimated laser light
US6643305B2 (en) 2000-04-07 2003-11-04 The United States Of America As Represented By The Secretary Of The Navy Optical pumping injection cavity for optically pumped devices
JP3829594B2 (ja) * 2000-06-30 2006-10-04 セイコーエプソン株式会社 素子実装方法と光伝送装置
GB2369929A (en) * 2000-12-08 2002-06-12 Univ Southampton Semiconductor laser device
DE10241192A1 (de) * 2002-09-05 2004-03-11 Osram Opto Semiconductors Gmbh Optisch gepumpte strahlungsemittierende Halbleitervorrichtung und Verfahren zu deren Herstellung
TWI282650B (en) * 2002-10-11 2007-06-11 Eastman Kodak Co Organic vertical cavity lasing devices having organic active region
GB2399941A (en) * 2003-03-24 2004-09-29 Univ Strathclyde Vertical cavity semiconductor optical devices
GB2399942A (en) * 2003-03-24 2004-09-29 Univ Strathclyde Vertical cavity semiconductor optical devices
US6836495B2 (en) * 2003-05-07 2004-12-28 Eastman Kodak Company Vertical cavity laser including inorganic spacer layers
US6939012B2 (en) * 2003-06-02 2005-09-06 Eastman Kodak Company Laser image projector
JP5214140B2 (ja) * 2006-12-12 2013-06-19 浜松ホトニクス株式会社 半導体発光素子
JP5112910B2 (ja) * 2008-02-27 2013-01-09 オリンパス株式会社 保持具
WO2012068563A1 (en) * 2010-11-19 2012-05-24 Trilumina Corporation Optical pumping of solid-state laser material using addressable laser array

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4881236A (en) * 1988-04-22 1989-11-14 University Of New Mexico Wavelength-resonant surface-emitting semiconductor laser
US4999842A (en) * 1989-03-01 1991-03-12 At&T Bell Laboratories Quantum well vertical cavity laser
US5369524A (en) * 1991-09-24 1994-11-29 Thomson-Csf Optical fiber monofrequency power source

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US4395769A (en) * 1981-03-03 1983-07-26 Bell Telephone Laboratories, Incorporated Tunable semiconductor laser
US4718070A (en) * 1985-01-22 1988-01-05 Massachusetts Institute Of Technology Surface emitting diode laser
US5034344A (en) * 1989-07-17 1991-07-23 Bell Communications Research, Inc. Method of making a surface emitting semiconductor laser
US4949350A (en) * 1989-07-17 1990-08-14 Bell Communications Research, Inc. Surface emitting semiconductor laser
US5206872A (en) * 1991-11-01 1993-04-27 At&T Bell Laboratories Surface emitting laser
US5258990A (en) * 1991-11-07 1993-11-02 The United States Of America As Represented By The Secretary Of The United States Department Of Energy Visible light surface emitting semiconductor laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4881236A (en) * 1988-04-22 1989-11-14 University Of New Mexico Wavelength-resonant surface-emitting semiconductor laser
US4999842A (en) * 1989-03-01 1991-03-12 At&T Bell Laboratories Quantum well vertical cavity laser
US5369524A (en) * 1991-09-24 1994-11-29 Thomson-Csf Optical fiber monofrequency power source

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS, vol. 62, no. 22, 31 May 1993, pages 2748-2750, XP000380898 SCHNEIDER JR R P ET AL: "INALP/INALGAP DISTRIBUTED BRAGG REFLECTORS FOR VISIBLE VERTICAL CAVITY SURFACE-EMITTING LASERS" *
JOURNAL OF CRYSTAL GROWTH, vol. 124, no. 1/04, 1 November 1992, pages 763-771, XP000411855 SCHNEIDER R P ET AL: "MOVPE GROWTH OF INALGAP-BASED VISIBLE VERTICAL-CAVITY SURFACE- EMITTING LASERS" *
OSA PROCEEDINGS ON PHOTONIC SWITCHING, SALT LAKE CITY, MAR. 1 - 3, 1989, vol. 3, 1 March 1989, MIDWINTER J E;SCOTT HINTON H (EDS ), pages 7-11, XP000470914 JEWELL J L ET AL: "VERTICAL CAVITY SINGLE-QUANTUM-WELL LASER" *

Also Published As

Publication number Publication date
JPH08340149A (ja) 1996-12-24
US5513203A (en) 1996-04-30
CA2171997A1 (en) 1996-10-06
TW311295B (de) 1997-07-21
DE69610522T2 (de) 2001-03-22
EP0742619A3 (de) 1997-07-23
EP0742619B1 (de) 2000-10-04
DE69610522D1 (de) 2000-11-09
JP3121761B2 (ja) 2001-01-09
CA2171997C (en) 1999-11-09

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