DE69825870D1 - Laser mit seitlicher Begrenzung - Google Patents
Laser mit seitlicher BegrenzungInfo
- Publication number
- DE69825870D1 DE69825870D1 DE69825870T DE69825870T DE69825870D1 DE 69825870 D1 DE69825870 D1 DE 69825870D1 DE 69825870 T DE69825870 T DE 69825870T DE 69825870 T DE69825870 T DE 69825870T DE 69825870 D1 DE69825870 D1 DE 69825870D1
- Authority
- DE
- Germany
- Prior art keywords
- laser
- side limitation
- limitation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9700931A SE9700931D0 (sv) | 1997-03-14 | 1997-03-14 | Buried heterostructure laser |
SE9700931 | 1997-03-14 | ||
PCT/SE1998/000416 WO1998042051A1 (en) | 1997-03-14 | 1998-03-06 | Lateral confinement laser |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69825870D1 true DE69825870D1 (de) | 2004-09-30 |
DE69825870T2 DE69825870T2 (de) | 2005-09-01 |
Family
ID=20406159
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69825870T Expired - Lifetime DE69825870T2 (de) | 1997-03-14 | 1998-03-06 | Laser mit seitlicher Begrenzung |
Country Status (10)
Country | Link |
---|---|
EP (1) | EP0966778B1 (de) |
JP (1) | JP2001515659A (de) |
KR (1) | KR20000076262A (de) |
CN (1) | CN1090831C (de) |
AU (1) | AU6428398A (de) |
CA (1) | CA2283233C (de) |
DE (1) | DE69825870T2 (de) |
HK (1) | HK1027440A1 (de) |
SE (1) | SE9700931D0 (de) |
WO (1) | WO1998042051A1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005159299A (ja) * | 2003-10-30 | 2005-06-16 | Sharp Corp | 半導体発光素子 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4425650A (en) * | 1980-04-15 | 1984-01-10 | Nippon Electric Co., Ltd. | Buried heterostructure laser diode |
CA1218136A (en) * | 1983-01-17 | 1987-02-17 | Toshihiro Kawano | Semiconductor laser device |
GB8516853D0 (en) * | 1985-07-03 | 1985-08-07 | British Telecomm | Manufacture of semiconductor structures |
JP2561163B2 (ja) * | 1990-02-28 | 1996-12-04 | 富士通株式会社 | メサ埋め込み型光半導体装置の製造方法 |
JP2823476B2 (ja) * | 1992-05-14 | 1998-11-11 | 三菱電機株式会社 | 半導体レーザおよびその製造方法 |
-
1997
- 1997-03-14 SE SE9700931A patent/SE9700931D0/xx unknown
-
1998
- 1998-03-06 EP EP98909917A patent/EP0966778B1/de not_active Expired - Lifetime
- 1998-03-06 CN CN98803285A patent/CN1090831C/zh not_active Expired - Fee Related
- 1998-03-06 DE DE69825870T patent/DE69825870T2/de not_active Expired - Lifetime
- 1998-03-06 CA CA002283233A patent/CA2283233C/en not_active Expired - Fee Related
- 1998-03-06 JP JP54041398A patent/JP2001515659A/ja not_active Ceased
- 1998-03-06 WO PCT/SE1998/000416 patent/WO1998042051A1/en active IP Right Grant
- 1998-03-06 AU AU64283/98A patent/AU6428398A/en not_active Abandoned
- 1998-03-06 KR KR1019997008358A patent/KR20000076262A/ko not_active Application Discontinuation
-
2000
- 2000-10-10 HK HK00106430A patent/HK1027440A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
AU6428398A (en) | 1998-10-12 |
HK1027440A1 (en) | 2001-01-12 |
JP2001515659A (ja) | 2001-09-18 |
KR20000076262A (ko) | 2000-12-26 |
EP0966778A1 (de) | 1999-12-29 |
CA2283233C (en) | 2005-08-16 |
SE9700931D0 (sv) | 1997-03-14 |
EP0966778B1 (de) | 2004-08-25 |
CN1250551A (zh) | 2000-04-12 |
CN1090831C (zh) | 2002-09-11 |
CA2283233A1 (en) | 1998-09-24 |
WO1998042051A1 (en) | 1998-09-24 |
DE69825870T2 (de) | 2005-09-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |