KR970004173A - 고출력 레이저 다이오드 - Google Patents

고출력 레이저 다이오드 Download PDF

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Publication number
KR970004173A
KR970004173A KR1019950014525A KR19950014525A KR970004173A KR 970004173 A KR970004173 A KR 970004173A KR 1019950014525 A KR1019950014525 A KR 1019950014525A KR 19950014525 A KR19950014525 A KR 19950014525A KR 970004173 A KR970004173 A KR 970004173A
Authority
KR
South Korea
Prior art keywords
laser diode
high power
power laser
diode
power
Prior art date
Application number
KR1019950014525A
Other languages
English (en)
Other versions
KR100364770B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to KR1019950014525A priority Critical patent/KR100364770B1/ko
Publication of KR970004173A publication Critical patent/KR970004173A/ko
Application granted granted Critical
Publication of KR100364770B1 publication Critical patent/KR100364770B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/06—LPE

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
KR1019950014525A 1995-06-01 1995-06-01 고출력레이저다이오드 KR100364770B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950014525A KR100364770B1 (ko) 1995-06-01 1995-06-01 고출력레이저다이오드

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950014525A KR100364770B1 (ko) 1995-06-01 1995-06-01 고출력레이저다이오드

Publications (2)

Publication Number Publication Date
KR970004173A true KR970004173A (ko) 1997-01-29
KR100364770B1 KR100364770B1 (ko) 2003-03-03

Family

ID=37490980

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950014525A KR100364770B1 (ko) 1995-06-01 1995-06-01 고출력레이저다이오드

Country Status (1)

Country Link
KR (1) KR100364770B1 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100427688B1 (ko) * 2002-03-09 2004-04-28 엘지전자 주식회사 고 광전 효율을 가지는 반도체 레이저 다이오드
US9107019B2 (en) 2011-08-01 2015-08-11 Samsung Electronics Co., Ltd. Signal processing apparatus and method for providing spatial impression

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100427688B1 (ko) * 2002-03-09 2004-04-28 엘지전자 주식회사 고 광전 효율을 가지는 반도체 레이저 다이오드
US9107019B2 (en) 2011-08-01 2015-08-11 Samsung Electronics Co., Ltd. Signal processing apparatus and method for providing spatial impression

Also Published As

Publication number Publication date
KR100364770B1 (ko) 2003-03-03

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Year of fee payment: 6

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