DE69405959D1 - Integrierte oberflächenemittierende Laservorrichtung - Google Patents

Integrierte oberflächenemittierende Laservorrichtung

Info

Publication number
DE69405959D1
DE69405959D1 DE69405959T DE69405959T DE69405959D1 DE 69405959 D1 DE69405959 D1 DE 69405959D1 DE 69405959 T DE69405959 T DE 69405959T DE 69405959 T DE69405959 T DE 69405959T DE 69405959 D1 DE69405959 D1 DE 69405959D1
Authority
DE
Germany
Prior art keywords
laser device
emitting laser
surface emitting
integrated surface
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69405959T
Other languages
English (en)
Other versions
DE69405959T2 (de
Inventor
Jean-Claude Bouley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oclaro North America Inc
Original Assignee
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom SA filed Critical France Telecom SA
Application granted granted Critical
Publication of DE69405959D1 publication Critical patent/DE69405959D1/de
Publication of DE69405959T2 publication Critical patent/DE69405959T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE1994605959 1993-10-29 1994-10-27 Integrierte oberflächenemittierende Laservorrichtung Expired - Fee Related DE69405959T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9312940A FR2711856B1 (fr) 1993-10-29 1993-10-29 Dispositif laser à émission de surface.

Publications (2)

Publication Number Publication Date
DE69405959D1 true DE69405959D1 (de) 1997-11-06
DE69405959T2 DE69405959T2 (de) 1998-04-02

Family

ID=9452361

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1994605959 Expired - Fee Related DE69405959T2 (de) 1993-10-29 1994-10-27 Integrierte oberflächenemittierende Laservorrichtung

Country Status (3)

Country Link
EP (1) EP0651477B1 (de)
DE (1) DE69405959T2 (de)
FR (1) FR2711856B1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2734676B1 (fr) * 1995-05-23 1997-08-08 Labeyrie Antoine Procede et dispositifs d'emission ou reception laser pour la transmission d'informations par voie optique
DE19523267A1 (de) * 1995-06-27 1997-01-02 Bosch Gmbh Robert Lasermodul
KR100374796B1 (ko) * 2001-02-02 2003-03-03 삼성전기주식회사 Ｐ형 전극과 활성층 사이에 효과적인 정공 확산을 위한 스페이서를 구비하는 ＧａＮ 면 발광 레이저 다이오드 및그 제조 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4675876A (en) * 1985-02-14 1987-06-23 Northern Telecom Limited Bragg distributed feedback surface emitting laser
US5052016A (en) * 1990-05-18 1991-09-24 University Of New Mexico Resonant-periodic-gain distributed-feedback surface-emitting semiconductor laser

Also Published As

Publication number Publication date
FR2711856A1 (fr) 1995-05-05
FR2711856B1 (fr) 1995-11-24
DE69405959T2 (de) 1998-04-02
EP0651477A1 (de) 1995-05-03
EP0651477B1 (de) 1997-10-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AVANEX CORP.(N.D.GES.D.STAATES DELAWARE), FREMONT,

8339 Ceased/non-payment of the annual fee