DE69525003T2 - Verfahren zum Herstellen eines DMOS-Transistors mit Grabenstruktur unter Verwendung von sieben Masken - Google Patents

Verfahren zum Herstellen eines DMOS-Transistors mit Grabenstruktur unter Verwendung von sieben Masken

Info

Publication number
DE69525003T2
DE69525003T2 DE69525003T DE69525003T DE69525003T2 DE 69525003 T2 DE69525003 T2 DE 69525003T2 DE 69525003 T DE69525003 T DE 69525003T DE 69525003 T DE69525003 T DE 69525003T DE 69525003 T2 DE69525003 T2 DE 69525003T2
Authority
DE
Germany
Prior art keywords
masks
trench
manufacturing
dmos transistor
dmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69525003T
Other languages
English (en)
Other versions
DE69525003D1 (de
Inventor
Fwu-Iuan Hshieh
Mike F Chang
Yueh-Se Ho
King Owyang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
Original Assignee
Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconix Inc filed Critical Siliconix Inc
Publication of DE69525003D1 publication Critical patent/DE69525003D1/de
Application granted granted Critical
Publication of DE69525003T2 publication Critical patent/DE69525003T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Local Oxidation Of Silicon (AREA)
DE69525003T 1994-08-15 1995-08-10 Verfahren zum Herstellen eines DMOS-Transistors mit Grabenstruktur unter Verwendung von sieben Masken Expired - Lifetime DE69525003T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US29032394A 1994-08-15 1994-08-15

Publications (2)

Publication Number Publication Date
DE69525003D1 DE69525003D1 (de) 2002-02-21
DE69525003T2 true DE69525003T2 (de) 2003-10-09

Family

ID=23115485

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69525003T Expired - Lifetime DE69525003T2 (de) 1994-08-15 1995-08-10 Verfahren zum Herstellen eines DMOS-Transistors mit Grabenstruktur unter Verwendung von sieben Masken

Country Status (4)

Country Link
US (2) US5639676A (de)
EP (1) EP0698919B1 (de)
JP (2) JPH08204194A (de)
DE (1) DE69525003T2 (de)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6103635A (en) * 1997-10-28 2000-08-15 Fairchild Semiconductor Corp. Trench forming process and integrated circuit device including a trench
US6429481B1 (en) * 1997-11-14 2002-08-06 Fairchild Semiconductor Corporation Field effect transistor and method of its manufacture
US6309952B1 (en) 1998-10-06 2001-10-30 Fairchild Semiconductor Corporation Process for forming high voltage junction termination extension oxide
US5998833A (en) * 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
US6621121B2 (en) * 1998-10-26 2003-09-16 Silicon Semiconductor Corporation Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes
US5981999A (en) * 1999-01-07 1999-11-09 Industrial Technology Research Institute Power trench DMOS with large active cell density
GB9917099D0 (en) 1999-07-22 1999-09-22 Koninkl Philips Electronics Nv Cellular trench-gate field-effect transistors
KR100399583B1 (ko) * 1999-11-29 2003-09-26 한국전자통신연구원 자기 정렬 기술을 이용한 트렌치 게이트 전력 소자 제조방법
US6642558B1 (en) * 2000-03-20 2003-11-04 Koninklijke Philips Electronics N.V. Method and apparatus of terminating a high voltage solid state device
TW523816B (en) 2000-06-16 2003-03-11 Gen Semiconductor Inc Semiconductor trench device with enhanced gate oxide integrity structure
US7745289B2 (en) 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
JP4614522B2 (ja) * 2000-10-25 2011-01-19 富士通セミコンダクター株式会社 半導体装置及びその製造方法
JP4635333B2 (ja) * 2000-12-14 2011-02-23 ソニー株式会社 半導体装置の製造方法
US6468870B1 (en) 2000-12-26 2002-10-22 Taiwan Semiconductor Manufacturing Company Method of fabricating a LDMOS transistor
US6710403B2 (en) * 2002-07-30 2004-03-23 Fairchild Semiconductor Corporation Dual trench power MOSFET
US6916745B2 (en) 2003-05-20 2005-07-12 Fairchild Semiconductor Corporation Structure and method for forming a trench MOSFET having self-aligned features
US7132712B2 (en) 2002-11-05 2006-11-07 Fairchild Semiconductor Corporation Trench structure having one or more diodes embedded therein adjacent a PN junction
US6803626B2 (en) * 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
US6677641B2 (en) 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US6818513B2 (en) 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
US6731023B2 (en) * 2001-03-29 2004-05-04 Autoliv Asp, Inc. Backup power supply for restraint control module
US6683363B2 (en) 2001-07-03 2004-01-27 Fairchild Semiconductor Corporation Trench structure for semiconductor devices
US7061066B2 (en) 2001-10-17 2006-06-13 Fairchild Semiconductor Corporation Schottky diode using charge balance structure
US6544828B1 (en) 2001-11-07 2003-04-08 Taiwan Semiconductor Manufacturing Company Adding a poly-strip on isolation's edge to improve endurance of high voltage NMOS on EEPROM
US6818947B2 (en) 2002-09-19 2004-11-16 Fairchild Semiconductor Corporation Buried gate-field termination structure
US6825510B2 (en) 2002-09-19 2004-11-30 Fairchild Semiconductor Corporation Termination structure incorporating insulator in a trench
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US7033891B2 (en) 2002-10-03 2006-04-25 Fairchild Semiconductor Corporation Trench gate laterally diffused MOSFET devices and methods for making such devices
US6710418B1 (en) 2002-10-11 2004-03-23 Fairchild Semiconductor Corporation Schottky rectifier with insulation-filled trenches and method of forming the same
KR100511590B1 (ko) * 2003-01-30 2005-09-02 동부아남반도체 주식회사 반도체 소자 및 그의 제조 방법
US6992352B2 (en) 2003-05-15 2006-01-31 Analog Power Limited Trenched DMOS devices and methods and processes for making same
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
JP4860102B2 (ja) * 2003-06-26 2012-01-25 ルネサスエレクトロニクス株式会社 半導体装置
US20050259368A1 (en) * 2003-11-12 2005-11-24 Ted Letavic Method and apparatus of terminating a high voltage solid state device
KR100994719B1 (ko) 2003-11-28 2010-11-16 페어차일드코리아반도체 주식회사 슈퍼정션 반도체장치
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
US7045857B2 (en) * 2004-03-26 2006-05-16 Siliconix Incorporated Termination for trench MIS device having implanted drain-drift region
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
JP2006140372A (ja) * 2004-11-15 2006-06-01 Sanyo Electric Co Ltd 半導体装置およびその製造方法
US7504306B2 (en) 2005-04-06 2009-03-17 Fairchild Semiconductor Corporation Method of forming trench gate field effect transistor with recessed mesas
JP2006013556A (ja) * 2005-09-26 2006-01-12 Renesas Technology Corp 半導体装置
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
US20080206944A1 (en) * 2007-02-23 2008-08-28 Pan-Jit International Inc. Method for fabricating trench DMOS transistors and schottky elements
WO2009039441A1 (en) 2007-09-21 2009-03-26 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US7772668B2 (en) 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
US8174067B2 (en) * 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8304829B2 (en) * 2008-12-08 2012-11-06 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8227855B2 (en) * 2009-02-09 2012-07-24 Fairchild Semiconductor Corporation Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same
US8148749B2 (en) * 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
US8461661B2 (en) * 2009-04-06 2013-06-11 Polar Semiconductor, Inc. Locos nitride capping of deep trench polysilicon fill
US8049276B2 (en) 2009-06-12 2011-11-01 Fairchild Semiconductor Corporation Reduced process sensitivity of electrode-semiconductor rectifiers
US8319290B2 (en) 2010-06-18 2012-11-27 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
JP5957171B2 (ja) * 2010-06-30 2016-07-27 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
US8487371B2 (en) 2011-03-29 2013-07-16 Fairchild Semiconductor Corporation Vertical MOSFET transistor having source/drain contacts disposed on the same side and method for manufacturing the same
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8872278B2 (en) 2011-10-25 2014-10-28 Fairchild Semiconductor Corporation Integrated gate runner and field implant termination for trench devices
US8785997B2 (en) 2012-05-16 2014-07-22 Infineon Technologies Ag Semiconductor device including a silicate glass structure and method of manufacturing a semiconductor device
US9324784B2 (en) 2014-04-10 2016-04-26 Semiconductor Components Industries, Llc Electronic device having a termination region including an insulating region
US9343528B2 (en) 2014-04-10 2016-05-17 Semiconductor Components Industries, Llc Process of forming an electronic device having a termination region including an insulating region
KR20180097510A (ko) 2015-10-01 2018-08-31 디3 세미컨덕터 엘엘씨 수직 전력 반도체 디바이스 내의 소스-게이트 영역 구조물
JP7316746B2 (ja) * 2017-03-14 2023-07-28 富士電機株式会社 半導体装置および半導体装置の製造方法
CN116646384B (zh) * 2023-07-27 2024-03-26 深圳芯能半导体技术有限公司 一种具沟槽场截止结构的igbt芯片及其制作方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3892169A (en) * 1974-02-26 1975-07-01 Frank R Jarnot Readily installed vent for flexible cover panel
JPS5658267A (en) * 1979-10-17 1981-05-21 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type field-effect transistor
DK147365C (da) * 1981-02-27 1984-12-24 Henning Zinkar Nielsen Udluftningsventil til tage
US4567641A (en) * 1982-04-12 1986-02-04 General Electric Company Method of fabricating semiconductor devices having a diffused region of reduced length
JPS5984474A (ja) * 1982-11-05 1984-05-16 Nec Corp 電力用縦型電界効果トランジスタ
JP2561453B2 (ja) * 1983-02-07 1996-12-11 住友重機械工業株式会社 電気集塵機用パルス電源
JPS61274366A (ja) * 1985-05-29 1986-12-04 Tdk Corp 高耐圧半導体装置
SE455953B (en) * 1985-09-09 1988-08-22 Mb Byggkomponenter Ab Vent for building roof panel
JPS62176168A (ja) * 1986-01-30 1987-08-01 Nippon Denso Co Ltd 縦型ｍｏｓトランジスタ
US4941026A (en) * 1986-12-05 1990-07-10 General Electric Company Semiconductor devices exhibiting minimum on-resistance
JPS63263769A (ja) * 1987-04-22 1988-10-31 Hitachi Ltd 半導体装置
JPS6442177A (en) * 1987-08-10 1989-02-14 Hitachi Ltd Insulated gate transistor
JPH01198076A (ja) * 1988-02-02 1989-08-09 Mitsubishi Electric Corp 半導体装置
JPH0783118B2 (ja) * 1988-06-08 1995-09-06 三菱電機株式会社 半導体装置およびその製造方法
US5019526A (en) * 1988-09-26 1991-05-28 Nippondenso Co., Ltd. Method of manufacturing a semiconductor device having a plurality of elements
JPH0291976A (ja) * 1988-09-29 1990-03-30 Oki Electric Ind Co Ltd 縦型溝型ｍｏｓ　ｆｅｔの製造方法
JPH0294477A (ja) * 1988-09-30 1990-04-05 Toshiba Corp 半導体装置及びその製造方法
US5072266A (en) * 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
US4954854A (en) * 1989-05-22 1990-09-04 International Business Machines Corporation Cross-point lightly-doped drain-source trench transistor and fabrication process therefor
JP2689606B2 (ja) * 1989-05-24 1997-12-10 富士電機株式会社 絶縁ゲート電界効果型トランジスタの製造方法
US5304831A (en) 1990-12-21 1994-04-19 Siliconix Incorporated Low on-resistance power MOS technology
JPH04242934A (ja) * 1991-01-07 1992-08-31 Toshiba Corp 半導体装置の製造方法
US5168331A (en) * 1991-01-31 1992-12-01 Siliconix Incorporated Power metal-oxide-semiconductor field effect transistor
JP3175852B2 (ja) * 1992-03-30 2001-06-11 株式会社デンソー 半導体装置及びその製造方法
JPH0629538A (ja) * 1992-07-08 1994-02-04 Hitachi Ltd 半導体装置
US5430324A (en) * 1992-07-23 1995-07-04 Siliconix, Incorporated High voltage transistor having edge termination utilizing trench technology
US5316959A (en) * 1992-08-12 1994-05-31 Siliconix, Incorporated Trenched DMOS transistor fabrication using six masks
JP2912508B2 (ja) * 1992-11-13 1999-06-28 シャープ株式会社 縦型ｍｏｓトランジスタの製造方法
US5341011A (en) * 1993-03-15 1994-08-23 Siliconix Incorporated Short channel trenched DMOS transistor
US5482888A (en) * 1994-08-12 1996-01-09 United Microelectronics Corporation Method of manufacturing a low resistance, high breakdown voltage, power MOSFET

Also Published As

Publication number Publication date
US5639676A (en) 1997-06-17
JPH08204194A (ja) 1996-08-09
DE69525003D1 (de) 2002-02-21
EP0698919B1 (de) 2002-01-16
EP0698919A2 (de) 1996-02-28
US5578851A (en) 1996-11-26
EP0698919A3 (de) 1996-05-01
JP2007281515A (ja) 2007-10-25

Similar Documents

Publication Publication Date Title
DE69525003T2 (de) Verfahren zum Herstellen eines DMOS-Transistors mit Grabenstruktur unter Verwendung von sieben Masken
DE69619602D1 (de) Verfahren zum Herstellen eines Halbleiter-Substrats
DE69515020T2 (de) Verfahren zum Züchten eines Halbleiterkristalls
DE59406372D1 (de) Verfahren zum herstellen eines dredidimensionalen objekts
DE69622505T2 (de) Verfahren zum herstellen von luftreifen
ATA29293A (de) Verfahren zum herstellen eines bandes, vorstreifens oder einer bramme
DE69825138D1 (de) Verfahren und Vorrichtung zum Herstellen von dünnen Schichten einer Metallverbindung
DE69507607T2 (de) Verfahren zum herstellen von diamantfilmen
DE69809226D1 (de) Verfahren und vorrichtung zum herstellen von einer waschzusammensetzung
DE59400189D1 (de) Verfahren zum Herstellen eines Metall-Keramik-Substrates
DE69015550D1 (de) Verfahren zum Züchten eines Kristalls.
DE69523215T2 (de) Zylinder-Einheit und Verfahren zum Herstellen von Laufflächen
DE59601339D1 (de) Verfahren zum automatisierten Erstellen eines verfahrenstechnischen Schemas
DE69506646T2 (de) Verfahren zum Herstellen einer Halbleitereinrichtung
DE59509490D1 (de) Verfahren zum Steuern eines Bohrwerkzeugs
DE59508937D1 (de) Verfahren zum Herstellen eines Behälters
DE59409429D1 (de) Verfahren zum Herstellen eines Metall-Keramik-Substrates
DE59302516D1 (de) Verfahren zum Herstellen einer Wellenabdichtung
DE59811760D1 (de) Verfahren zum herstellen eines glaskörpers mit mindestens einer ausnehmung
DE69611811T2 (de) Verfahren zum herstellen von kunststofflinsen
DE69327749T2 (de) Verfahren zum Einstellen der Konzentration eines Entwicklers
DE19580064D2 (de) Vorrichtung und Verfahren zum Ausrichten von Saiten eines Geflechtes
DE69504476T2 (de) Verfahren zum herstellen von polyflouroxetanen
DE59610416D1 (de) Verfahren zum Einstellen der Bewegung eines leistungsverändernden Regelorgans
DE59610612D1 (de) Verfahren zum Herstellung eines bipolaren Siliziumtransistors

Legal Events

Date Code Title Description
8364 No opposition during term of opposition