DE69523292D1 - Integrierte Halbleiterschaltung bestehend aus bipolaren Transistoren und MOS Transistoren und dazugehöriges Herstellungsverfahren - Google Patents

Integrierte Halbleiterschaltung bestehend aus bipolaren Transistoren und MOS Transistoren und dazugehöriges Herstellungsverfahren

Info

Publication number
DE69523292D1
DE69523292D1 DE69523292T DE69523292T DE69523292D1 DE 69523292 D1 DE69523292 D1 DE 69523292D1 DE 69523292 T DE69523292 T DE 69523292T DE 69523292 T DE69523292 T DE 69523292T DE 69523292 D1 DE69523292 D1 DE 69523292D1
Authority
DE
Germany
Prior art keywords
manufacturing process
semiconductor circuit
integrated semiconductor
circuit consisting
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69523292T
Other languages
English (en)
Other versions
DE69523292T2 (de
Inventor
Shigeki Sawada
Takashi Furuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69523292D1 publication Critical patent/DE69523292D1/de
Publication of DE69523292T2 publication Critical patent/DE69523292T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE69523292T 1995-05-29 1995-12-14 Integrierte Halbleiterschaltung bestehend aus bipolaren Transistoren und MOS Transistoren und dazugehöriges Herstellungsverfahren Expired - Fee Related DE69523292T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13047295 1995-05-29

Publications (2)

Publication Number Publication Date
DE69523292D1 true DE69523292D1 (de) 2001-11-22
DE69523292T2 DE69523292T2 (de) 2002-04-18

Family

ID=15035067

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69523292T Expired - Fee Related DE69523292T2 (de) 1995-05-29 1995-12-14 Integrierte Halbleiterschaltung bestehend aus bipolaren Transistoren und MOS Transistoren und dazugehöriges Herstellungsverfahren

Country Status (4)

Country Link
EP (1) EP0746032B1 (de)
KR (1) KR0158065B1 (de)
CN (1) CN1085893C (de)
DE (1) DE69523292T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2756103B1 (fr) * 1996-11-19 1999-05-14 Sgs Thomson Microelectronics Fabrication de circuits integres bipolaires/cmos et d'un condensateur
FR2756100B1 (fr) 1996-11-19 1999-02-12 Sgs Thomson Microelectronics Transistor bipolaire a emetteur inhomogene dans un circuit integre bicmos
FR2757683B1 (fr) * 1996-12-20 1999-03-05 Sgs Thomson Microelectronics Transistor bipolaire et capacite
FR2758004B1 (fr) * 1996-12-27 1999-03-05 Sgs Thomson Microelectronics Transistor bipolaire a isolement dielectrique
FR2774509B1 (fr) * 1998-01-30 2001-11-16 Sgs Thomson Microelectronics Procede de depot d'une region de silicium monocristallin
FR2776828B1 (fr) * 1998-03-31 2003-01-03 Sgs Thomson Microelectronics Region de base-emetteur d'un transistor bipolaire submicronique
US6611044B2 (en) 1998-09-11 2003-08-26 Koninklijke Philips Electronics N.V. Lateral bipolar transistor and method of making same
US6143073A (en) * 1998-11-19 2000-11-07 Heraeus Shin-Etsu America Methods and apparatus for minimizing white point defects in quartz glass crucibles
FR2790867B1 (fr) * 1999-03-12 2001-11-16 St Microelectronics Sa Procede de fabrication de transistor bipolaire
DE10138648A1 (de) 2001-08-07 2003-03-06 Infineon Technologies Ag Verfahren zum parallelen Herstellen eines MOS-Transistors und eines Bipolartransistors
CN103915334B (zh) * 2014-04-04 2017-01-04 中国电子科技集团公司第五十五研究所 双层多晶硅双极型晶体管的制造方法
CN108878278B (zh) * 2018-06-29 2020-09-29 上海华虹宏力半导体制造有限公司 栅氧化层的制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63281456A (ja) * 1987-05-13 1988-11-17 Hitachi Ltd 半導体集積回路装置及びその製造方法
JPH03198371A (ja) * 1989-12-27 1991-08-29 Oki Electric Ind Co Ltd 半導体装置の製造方法
US5110815A (en) * 1990-12-03 1992-05-05 Hoechst-Roussel Pharmaceuticals Inc. 5-amino-5,6,7,8-tetrahydroquinolines and related compounds and pharmaceutical use

Also Published As

Publication number Publication date
EP0746032A2 (de) 1996-12-04
CN1137175A (zh) 1996-12-04
DE69523292T2 (de) 2002-04-18
EP0746032B1 (de) 2001-10-17
CN1085893C (zh) 2002-05-29
KR0158065B1 (ko) 1998-12-01
KR960043167A (ko) 1996-12-23
EP0746032A3 (de) 1998-09-02

Similar Documents

Publication Publication Date Title
DE3476493D1 (en) A semiconductor integrated circuit device comprising an mos transistor and a bipolar transistor and a manufacturing method of the same
DE69324871D1 (de) Hochspannungs-MIS-Feldeffektransistor und integrierte Halbleiterschaltung
KR900015344A (ko) 단일의 집적회로칩에 고압 및 저압 cmos 트랜지스터를 형성하는 공정
DE69627252T2 (de) Halbleitersubstrat und Herstellungsverfahren
KR900015317A (ko) 단일집적회로의 칩내에 수직형 바이폴라 트랜지스터와 고압 cmos트랜지스터를 형성하는 공정
GB2304231B (en) Semiconductor integrated circuit device and method of manufacturing the same
DE69526539D1 (de) Halbleiteranordnung und Herstellungsverfahren
DE69525795D1 (de) Halbleiteranordnung und Herstellungsverfahren
DE59601335D1 (de) Halbleiterbauelement und Herstellverfahren
DE69809623D1 (de) Logische MOS-Schaltung und Halbleitervorrichtung
DE69133429D1 (de) Integriertes Halbleiter-Schaltkreisbauelement vom MOS-Typ
DE69430513D1 (de) Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren
DE69523292D1 (de) Integrierte Halbleiterschaltung bestehend aus bipolaren Transistoren und MOS Transistoren und dazugehöriges Herstellungsverfahren
DE3378446D1 (en) Integrated semiconductor circuit, comprising bipolar and mos transistors on the same chip, and method of making the same
DE68923017D1 (de) Bipolar- und CMOS-Transistoren verwendende integrierte Halbleiterschaltung.
DE69731028D1 (de) Halbleitersubstrat und seine Herstellung
DE3789826D1 (de) MOS-Halbleiteranordnung und Herstellungsverfahren.
DE69526543D1 (de) Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren
DE69402221D1 (de) Bipolartransistoren und deren Herstellungsverfahren
DE69019274D1 (de) Herstellung von aus polykristallinem Silizium bestehenden Dünnschichten und damit hergestellte Transistoren.
DE69221966D1 (de) Halbleiteranordnung mit verschmolzenen bipolaren und MOS-Transistoren und Herstellungsverfahren
DE69432016D1 (de) Verfahren zur Herstellung integrierter Schaltungen und erzeugte Halbleiterscheibe
WO1999021175A3 (en) Integrated circuit layout methods and layout structures
EP0614229A3 (en) Junction field-effect transistor (jfet), semiconductor integrated circuit device including jfet, and method of manufacturing the same.
DE59509632D1 (de) Bipolartransistor und Herstellungsverfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee