DE68923017D1 - Bipolar- und CMOS-Transistoren verwendende integrierte Halbleiterschaltung. - Google Patents
Bipolar- und CMOS-Transistoren verwendende integrierte Halbleiterschaltung.Info
- Publication number
- DE68923017D1 DE68923017D1 DE68923017T DE68923017T DE68923017D1 DE 68923017 D1 DE68923017 D1 DE 68923017D1 DE 68923017 T DE68923017 T DE 68923017T DE 68923017 T DE68923017 T DE 68923017T DE 68923017 D1 DE68923017 D1 DE 68923017D1
- Authority
- DE
- Germany
- Prior art keywords
- bipolar
- integrated circuit
- semiconductor integrated
- cmos transistors
- cmos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00307—Modifications for increasing the reliability for protection in bipolar transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/09425—Multistate logic
- H03K19/09429—Multistate logic one of the states being the high impedance or floating state
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Computing Systems (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Logic Circuits (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63051494A JP2569113B2 (ja) | 1988-03-07 | 1988-03-07 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68923017D1 true DE68923017D1 (de) | 1995-07-20 |
DE68923017T2 DE68923017T2 (de) | 1995-10-26 |
Family
ID=12888524
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68923017T Expired - Fee Related DE68923017T2 (de) | 1988-03-07 | 1989-03-03 | Bipolar- und CMOS-Transistoren verwendende integrierte Halbleiterschaltung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5047669A (de) |
EP (1) | EP0332077B1 (de) |
JP (1) | JP2569113B2 (de) |
KR (1) | KR0119471B1 (de) |
DE (1) | DE68923017T2 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02105622A (ja) * | 1988-10-13 | 1990-04-18 | Nec Corp | 論理ゲート回路 |
JPH02214219A (ja) * | 1989-02-14 | 1990-08-27 | Nec Corp | バイポーラmos3値出力バッファ |
JPH03231455A (ja) * | 1990-02-07 | 1991-10-15 | Toshiba Corp | 半導体集積回路 |
US5055716A (en) * | 1990-05-15 | 1991-10-08 | Siarc | Basic cell for bicmos gate array |
US5446321A (en) * | 1990-06-19 | 1995-08-29 | Texas Instruments Incorporated | BICMOS tri-state circuit with full output voltage swing |
JP3095229B2 (ja) * | 1990-08-31 | 2000-10-03 | 株式会社日立製作所 | マイクロプロセッサ及び複合論理回路 |
US5107142A (en) * | 1990-10-29 | 1992-04-21 | Sun Microsystems, Inc. | Apparatus for minimizing the reverse bias breakdown of emitter base junction of an output transistor in a tristate bicmos driver circuit |
JP2570492B2 (ja) * | 1990-11-28 | 1997-01-08 | 日本電気株式会社 | 半導体回路 |
US5153464A (en) * | 1990-12-14 | 1992-10-06 | Hewlett-Packard Company | Bicmos tri-state output buffer |
US5128562A (en) * | 1990-12-19 | 1992-07-07 | North American Philips Corporation, Signetics Division | Memory element with high metastability-immunity |
US5148056A (en) * | 1991-03-27 | 1992-09-15 | Mos Electronics Corp. | Output buffer circuit |
US5132567A (en) * | 1991-04-18 | 1992-07-21 | International Business Machines Corporation | Low threshold BiCMOS circuit |
JP3093380B2 (ja) * | 1991-11-15 | 2000-10-03 | 株式会社東芝 | 半導体集積回路における信号出力回路 |
US5184034A (en) * | 1991-12-06 | 1993-02-02 | National Semiconductor Corporation | State-dependent discharge path circuit |
US5371423A (en) * | 1992-12-14 | 1994-12-06 | Siemens Aktiengesellschaft | Tri-state-capable driver circuit |
US5399918A (en) | 1993-09-30 | 1995-03-21 | Intel Corporation | Large fan-in, dynamic, bicmos logic gate |
US5721875A (en) * | 1993-11-12 | 1998-02-24 | Intel Corporation | I/O transceiver having a pulsed latch receiver circuit |
US5398000A (en) * | 1994-03-30 | 1995-03-14 | Intel Corporation | Simple and high speed BICMOS tristate buffer circuit |
JP3614210B2 (ja) * | 1994-06-10 | 2005-01-26 | アジレント・テクノロジーズ・インク | トライステート・バッファ |
US5438270A (en) * | 1994-06-24 | 1995-08-01 | National Semiconductor Corporation | Low battery tester comparing load and no-load battery voltage |
US5600261A (en) * | 1994-10-05 | 1997-02-04 | Cypress Semiconductor Corporation | Output enable access for an output buffer |
DE59913368D1 (de) * | 1998-08-18 | 2006-06-01 | Infineon Technologies Ag | Treiberschaltung |
TW461180B (en) * | 1998-12-21 | 2001-10-21 | Sony Corp | Digital/analog converter circuit, level shift circuit, shift register utilizing level shift circuit, sampling latch circuit, latch circuit and liquid crystal display device incorporating the same |
JP2010003388A (ja) | 2008-06-23 | 2010-01-07 | Elpida Memory Inc | 半導体記憶装置およびそのテスト方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4029971A (en) * | 1976-02-13 | 1977-06-14 | Rca Corporation | Tri-state logic circuit |
JPH0693626B2 (ja) * | 1983-07-25 | 1994-11-16 | 株式会社日立製作所 | 半導体集積回路装置 |
US4610001A (en) * | 1983-10-03 | 1986-09-02 | Honeywell Information Systems Inc. | Write amplifier |
JPS60177723A (ja) * | 1984-02-24 | 1985-09-11 | Hitachi Ltd | 出力回路 |
JPH06103837B2 (ja) * | 1985-03-29 | 1994-12-14 | 株式会社東芝 | トライステ−ト形出力回路 |
US4612458A (en) * | 1985-08-28 | 1986-09-16 | Advanced Micro Devices, Inc. | Merged PMOS/bipolar logic circuits |
US4649294A (en) * | 1986-01-13 | 1987-03-10 | Motorola, Inc. | BIMOS logic gate |
JPS62254460A (ja) * | 1986-04-26 | 1987-11-06 | Toshiba Corp | Bi−CMOS論理回路 |
US4682054A (en) * | 1986-06-27 | 1987-07-21 | Motorola, Inc. | BICMOS driver with output voltage swing enhancement |
US4703203A (en) * | 1986-10-03 | 1987-10-27 | Motorola, Inc. | BICMOS logic having three state output |
JPH0611111B2 (ja) * | 1987-03-27 | 1994-02-09 | 株式会社東芝 | BiMOS論理回路 |
US4845385A (en) * | 1988-06-21 | 1989-07-04 | Silicon Connections Corporation | BiCMOS logic circuits with reduced crowbar current |
-
1988
- 1988-03-07 JP JP63051494A patent/JP2569113B2/ja not_active Expired - Lifetime
-
1989
- 1989-03-03 US US07/318,689 patent/US5047669A/en not_active Expired - Lifetime
- 1989-03-03 DE DE68923017T patent/DE68923017T2/de not_active Expired - Fee Related
- 1989-03-03 EP EP89103756A patent/EP0332077B1/de not_active Expired - Lifetime
- 1989-03-07 KR KR1019890002792A patent/KR0119471B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR890015425A (ko) | 1989-10-30 |
DE68923017T2 (de) | 1995-10-26 |
JP2569113B2 (ja) | 1997-01-08 |
EP0332077A3 (de) | 1991-04-24 |
EP0332077A2 (de) | 1989-09-13 |
KR0119471B1 (ko) | 1997-10-17 |
EP0332077B1 (de) | 1995-06-14 |
JPH01226215A (ja) | 1989-09-08 |
US5047669A (en) | 1991-09-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |