DE69517614D1 - Halbleiterdiodenlaser und dessen Herstellungsverfahren - Google Patents

Halbleiterdiodenlaser und dessen Herstellungsverfahren

Info

Publication number
DE69517614D1
DE69517614D1 DE69517614T DE69517614T DE69517614D1 DE 69517614 D1 DE69517614 D1 DE 69517614D1 DE 69517614 T DE69517614 T DE 69517614T DE 69517614 T DE69517614 T DE 69517614T DE 69517614 D1 DE69517614 D1 DE 69517614D1
Authority
DE
Germany
Prior art keywords
manufacturing process
diode laser
semiconductor diode
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69517614T
Other languages
English (en)
Other versions
DE69517614T2 (de
Inventor
Der Poel Carolus Johannes Van
Gerard Adriaan Acket
Marcel Franz Christi Schemmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Viavi Solutions Inc
Original Assignee
Uniphase Opto Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Uniphase Opto Holdings Inc filed Critical Uniphase Opto Holdings Inc
Publication of DE69517614D1 publication Critical patent/DE69517614D1/de
Application granted granted Critical
Publication of DE69517614T2 publication Critical patent/DE69517614T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE69517614T 1994-03-22 1995-03-09 Halbleiterdiodenlaser und dessen Herstellungsverfahren Expired - Fee Related DE69517614T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP94200730 1994-03-22

Publications (2)

Publication Number Publication Date
DE69517614D1 true DE69517614D1 (de) 2000-08-03
DE69517614T2 DE69517614T2 (de) 2001-02-15

Family

ID=8216720

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69517614T Expired - Fee Related DE69517614T2 (de) 1994-03-22 1995-03-09 Halbleiterdiodenlaser und dessen Herstellungsverfahren

Country Status (5)

Country Link
US (1) US5574743A (de)
JP (1) JPH07273398A (de)
CN (1) CN1113354A (de)
DE (1) DE69517614T2 (de)
TW (1) TW270250B (de)

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US5646953A (en) * 1994-04-06 1997-07-08 Matsushita Electronics Corporation Semiconductor laser device
JPH08279650A (ja) * 1995-04-06 1996-10-22 Mitsubishi Electric Corp 半導体レーザ装置、及び半導体レーザ装置の製造方法
JPH08288544A (ja) 1995-04-14 1996-11-01 Toshiba Corp 半導体発光素子
JP3434706B2 (ja) * 1998-05-21 2003-08-11 富士写真フイルム株式会社 半導体レーザおよびその製造方法
US6810063B1 (en) 1999-06-09 2004-10-26 The Furukawa Electric Co., Ltd. Semiconductor laser device
US6519272B1 (en) * 1999-06-30 2003-02-11 Corning Incorporated Long, high-power semiconductor laser with shifted-wave and passivated output facet
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
US6816531B1 (en) 2000-03-03 2004-11-09 Jds Uniphase Corporation High-power, kink-free, single mode laser diodes
JP4447728B2 (ja) * 2000-03-29 2010-04-07 富士フイルム株式会社 半導体レーザ素子
US7173551B2 (en) 2000-12-21 2007-02-06 Quellan, Inc. Increasing data throughput in optical fiber transmission systems
US7149256B2 (en) 2001-03-29 2006-12-12 Quellan, Inc. Multilevel pulse position modulation for efficient fiber optic communication
US7307569B2 (en) 2001-03-29 2007-12-11 Quellan, Inc. Increasing data throughput in optical fiber transmission systems
EP1384338B1 (de) 2001-04-04 2010-12-15 Quellan, Inc. Verfahren und system zum decodieren von mehrpegelsignalen
JP2003163412A (ja) 2001-11-28 2003-06-06 Sharp Corp 窒化物半導体レーザ装置及び半導体光学装置
AU2003211094A1 (en) 2002-02-15 2003-09-09 Quellan, Inc. Multi-level signal clock recovery technique
WO2003077423A2 (en) 2002-03-08 2003-09-18 Quellan, Inc. High speed analog-to-digital converter using a unique gray code having minimal bit transitions
AU2003256569A1 (en) 2002-07-15 2004-02-02 Quellan, Inc. Adaptive noise filtering and equalization
AU2003287628A1 (en) 2002-11-12 2004-06-03 Quellan, Inc. High-speed analog-to-digital conversion with improved robustness to timing uncertainty
JP4866550B2 (ja) * 2002-12-20 2012-02-01 クリー インコーポレイテッド 自己整合型の半導体メサおよびコンタクト層を有する半導体デバイス、および、該デバイスに関連する構造の形成方法
JP4089446B2 (ja) * 2003-01-23 2008-05-28 ソニー株式会社 半導体レーザ素子の製造方法
US6940877B2 (en) * 2003-05-30 2005-09-06 Np Photonics, Inc. High-power narrow-linewidth single-frequency laser
WO2005011076A1 (en) * 2003-07-31 2005-02-03 Bookham Technology Plc Weakly guiding ridge waveguides with vertical gratings
GB2421674B (en) 2003-08-07 2006-11-15 Quellan Inc Method and system for crosstalk cancellation
US7804760B2 (en) 2003-08-07 2010-09-28 Quellan, Inc. Method and system for signal emulation
EP1687929B1 (de) 2003-11-17 2010-11-10 Quellan, Inc. Verfahren und system zur löschung von antennenstörungen
US7616700B2 (en) 2003-12-22 2009-11-10 Quellan, Inc. Method and system for slicing a communication signal
US7522883B2 (en) 2004-12-14 2009-04-21 Quellan, Inc. Method and system for reducing signal interference
US7725079B2 (en) 2004-12-14 2010-05-25 Quellan, Inc. Method and system for automatic control in an interference cancellation device
KR100759802B1 (ko) * 2005-12-08 2007-09-20 한국전자통신연구원 매립형 봉우리 도파로 레이저 다이오드
US9252983B2 (en) 2006-04-26 2016-02-02 Intersil Americas LLC Method and system for reducing radiated emissions from a communications channel
US7682857B2 (en) * 2007-04-16 2010-03-23 Mitsubishi Electric Corporation Method for manufacturing semiconductor optical device
DE102010046793B4 (de) 2010-09-28 2024-05-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Kantenemittierende Halbleiterlaserdiode und Verfahren zu dessen Herstellung
DE102013204192B4 (de) * 2013-03-12 2021-07-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaser mit verbesserter Indexführung
CN105891692B (zh) * 2016-02-23 2019-01-01 青岛海信宽带多媒体技术有限公司 一种激光芯片p-i曲线扭折测试方法及装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5027362A (en) * 1988-12-29 1991-06-25 At&T Bell Laboratories Laser control method and circuitry

Also Published As

Publication number Publication date
JPH07273398A (ja) 1995-10-20
CN1113354A (zh) 1995-12-13
US5574743A (en) 1996-11-12
DE69517614T2 (de) 2001-02-15
TW270250B (de) 1996-02-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: JDS UNIPHASE CORP., SAN JOSE, CALIF., US

8339 Ceased/non-payment of the annual fee