DE69500392T2 - Halbleiterlasergerät und dessen Herstellungsverfahren - Google Patents

Halbleiterlasergerät und dessen Herstellungsverfahren

Info

Publication number
DE69500392T2
DE69500392T2 DE69500392T DE69500392T DE69500392T2 DE 69500392 T2 DE69500392 T2 DE 69500392T2 DE 69500392 T DE69500392 T DE 69500392T DE 69500392 T DE69500392 T DE 69500392T DE 69500392 T2 DE69500392 T2 DE 69500392T2
Authority
DE
Germany
Prior art keywords
manufacturing process
semiconductor laser
laser device
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69500392T
Other languages
English (en)
Other versions
DE69500392D1 (de
Inventor
Shigetoshi Itoh
Toshiyuki Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69500392D1 publication Critical patent/DE69500392D1/de
Application granted granted Critical
Publication of DE69500392T2 publication Critical patent/DE69500392T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE69500392T 1994-08-31 1995-08-31 Halbleiterlasergerät und dessen Herstellungsverfahren Expired - Fee Related DE69500392T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20692894A JPH0878785A (ja) 1994-08-31 1994-08-31 半導体レーザ素子およびその製造方法

Publications (2)

Publication Number Publication Date
DE69500392D1 DE69500392D1 (de) 1997-08-07
DE69500392T2 true DE69500392T2 (de) 1998-01-15

Family

ID=16531385

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69500392T Expired - Fee Related DE69500392T2 (de) 1994-08-31 1995-08-31 Halbleiterlasergerät und dessen Herstellungsverfahren

Country Status (4)

Country Link
US (1) US5658824A (de)
EP (1) EP0701310B1 (de)
JP (1) JPH0878785A (de)
DE (1) DE69500392T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0172797B1 (ko) * 1995-10-16 1999-03-30 김주용 레이저 다이오드 및 그 제조방법
KR100243655B1 (ko) * 1996-12-20 2000-02-01 정선종 3차원 공진기를 갖는 표면방출 레이저 및 그 제조방법
US6365968B1 (en) 1998-08-07 2002-04-02 Corning Lasertron, Inc. Polyimide/silicon oxide bi-layer for bond pad parasitic capacitance control in semiconductor electro-optical device
JP2002009396A (ja) * 2000-06-22 2002-01-11 Rohm Co Ltd 半導体レーザの製造方法
KR100449948B1 (ko) 2002-05-18 2004-09-30 주식회사 하이닉스반도체 콘택저항을 감소시킨 콘택플러그 형성방법
EP1589086A4 (de) * 2003-01-31 2006-03-22 Teijin Ltd Klebefolie und schichtkörper
JP3953027B2 (ja) * 2003-12-12 2007-08-01 ソニー株式会社 半導体装置およびその製造方法
JP6209843B2 (ja) * 2013-03-29 2017-10-11 住友電気工業株式会社 半導体変調器を作製する方法、半導体変調器
JP6236947B2 (ja) * 2013-07-16 2017-11-29 住友電気工業株式会社 半導体光素子を製造する方法、および半導体光素子

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63122187A (ja) * 1986-11-11 1988-05-26 Omron Tateisi Electronics Co 半導体レ−ザ
JPH01298784A (ja) * 1988-05-27 1989-12-01 Mitsubishi Electric Corp 半導体レーザの製造方法
EP0404551A3 (de) * 1989-06-20 1992-08-26 Optical Measurement Technology Development Co. Ltd. Optische Halbleitervorrichtung
US5404027A (en) * 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
US5818072A (en) * 1992-05-12 1998-10-06 North Carolina State University Integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
AU4378893A (en) * 1992-05-22 1993-12-30 Minnesota Mining And Manufacturing Company Ii-vi laser diodes with quantum wells grown by atomic layer epitaxy and migration enhanced epitaxy
US5319219A (en) * 1992-05-22 1994-06-07 Minnesota Mining And Manufacturing Company Single quantum well II-VI laser diode without cladding

Also Published As

Publication number Publication date
EP0701310B1 (de) 1997-07-02
DE69500392D1 (de) 1997-08-07
EP0701310A1 (de) 1996-03-13
US5658824A (en) 1997-08-19
JPH0878785A (ja) 1996-03-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee