DE69515876D1 - Leistungsbauelement in MOS-Technologie mit niedrigem Ausgangswiderstand und geringer Kapazität und dessen Herstellungsverfahren - Google Patents

Leistungsbauelement in MOS-Technologie mit niedrigem Ausgangswiderstand und geringer Kapazität und dessen Herstellungsverfahren

Info

Publication number
DE69515876D1
DE69515876D1 DE69515876T DE69515876T DE69515876D1 DE 69515876 D1 DE69515876 D1 DE 69515876D1 DE 69515876 T DE69515876 T DE 69515876T DE 69515876 T DE69515876 T DE 69515876T DE 69515876 D1 DE69515876 D1 DE 69515876D1
Authority
DE
Germany
Prior art keywords
capacity
manufacturing process
power device
low output
output resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69515876T
Other languages
English (en)
Other versions
DE69515876T2 (de
Inventor
Ferruccio Frisina
Giuseppe Ferla
Salvatore Rinaudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
STMicroelectronics SRL
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL, CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical STMicroelectronics SRL
Publication of DE69515876D1 publication Critical patent/DE69515876D1/de
Application granted granted Critical
Publication of DE69515876T2 publication Critical patent/DE69515876T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69515876T 1995-11-06 1995-11-06 Leistungsbauelement in MOS-Technologie mit niedrigem Ausgangswiderstand und geringer Kapazität und dessen Herstellungsverfahren Expired - Fee Related DE69515876T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP95830468A EP0772244B1 (de) 1995-11-06 1995-11-06 Leistungsbauelement in MOS-Technologie mit niedrigem Ausgangswiderstand und geringer Kapazität und dessen Herstellungsverfahren

Publications (2)

Publication Number Publication Date
DE69515876D1 true DE69515876D1 (de) 2000-04-27
DE69515876T2 DE69515876T2 (de) 2000-08-17

Family

ID=8222050

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69515876T Expired - Fee Related DE69515876T2 (de) 1995-11-06 1995-11-06 Leistungsbauelement in MOS-Technologie mit niedrigem Ausgangswiderstand und geringer Kapazität und dessen Herstellungsverfahren

Country Status (4)

Country Link
US (1) US5900662A (de)
EP (1) EP0772244B1 (de)
JP (1) JPH09232567A (de)
DE (1) DE69515876T2 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69534919T2 (de) 1995-10-30 2007-01-25 Stmicroelectronics S.R.L., Agrate Brianza Leistungsvorrichtung in MOS-Technologie mit einer einzigen kritischen Größe
DE69533134T2 (de) 1995-10-30 2005-07-07 Stmicroelectronics S.R.L., Agrate Brianza Leistungsbauteil hoher Dichte in MOS-Technologie
FR2767964B1 (fr) * 1997-09-04 2001-06-08 St Microelectronics Sa Procede de realisation de la zone de canal d'un transistor dmos
US6121089A (en) * 1997-10-17 2000-09-19 Intersil Corporation Methods of forming power semiconductor devices having merged split-well body regions therein
DE69839439D1 (de) 1998-05-26 2008-06-19 St Microelectronics Srl MOS-Technologie-Leistungsanordnung mit hoher Integrationsdichte
DE19840032C1 (de) 1998-09-02 1999-11-18 Siemens Ag Halbleiterbauelement und Herstellungsverfahren dazu
DE19854915C2 (de) * 1998-11-27 2002-09-05 Infineon Technologies Ag MOS-Feldeffekttransistor mit Hilfselektrode
DE69833743T2 (de) * 1998-12-09 2006-11-09 Stmicroelectronics S.R.L., Agrate Brianza Herstellungmethode einer integrierte Randstruktur für Hochspannung-Halbleiteranordnungen
US7589007B2 (en) * 1999-06-02 2009-09-15 Arizona Board Of Regents For And On Behalf Of Arizona State University MESFETs integrated with MOSFETs on common substrate and methods of forming the same
US6627961B1 (en) 2000-05-05 2003-09-30 International Rectifier Corporation Hybrid IGBT and MOSFET for zero current at zero voltage
US6677641B2 (en) 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US20030006483A1 (en) * 2001-03-28 2003-01-09 International Rectifier Corp. Short channel power MOSFET with increased breakdown voltage
WO2002091476A1 (en) 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Floating gate memory device using composite molecular material
JP4731794B2 (ja) * 2001-05-07 2011-07-27 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド メモリ効果を有するスイッチ素子及び該素子をスイッチングさせる方法
KR100900080B1 (ko) * 2001-05-07 2009-06-01 어드밴스드 마이크로 디바이시즈, 인코포레이티드 자기 조립형 폴리머 막을 구비한 메모리 디바이스 및 그제조 방법
AU2002340793A1 (en) * 2001-05-07 2002-11-18 Coatue Corporation Molecular memory device
WO2002091385A1 (en) * 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Molecular memory cell
WO2002091496A2 (en) * 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Reversible field-programmable electric interconnects
US6806526B2 (en) 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
KR100860134B1 (ko) 2001-08-13 2008-09-25 어드밴스드 마이크로 디바이시즈, 인코포레이티드 메모리 셀
US6858481B2 (en) 2001-08-13 2005-02-22 Advanced Micro Devices, Inc. Memory device with active and passive layers
US6768157B2 (en) 2001-08-13 2004-07-27 Advanced Micro Devices, Inc. Memory device
US6838720B2 (en) * 2001-08-13 2005-01-04 Advanced Micro Devices, Inc. Memory device with active passive layers
US6825514B2 (en) 2001-11-09 2004-11-30 Infineon Technologies Ag High-voltage semiconductor component
US6819089B2 (en) 2001-11-09 2004-11-16 Infineon Technologies Ag Power factor correction circuit with high-voltage semiconductor component
KR100433407B1 (ko) * 2002-02-06 2004-05-31 삼성광주전자 주식회사 업라이트형 진공청소기
US7012276B2 (en) * 2002-09-17 2006-03-14 Advanced Micro Devices, Inc. Organic thin film Zener diodes
US6969657B2 (en) * 2003-03-25 2005-11-29 International Rectifier Corporation Superjunction device and method of manufacture therefor
JP2007173675A (ja) * 2005-12-26 2007-07-05 Toyota Central Res & Dev Lab Inc 半導体装置とその製造方法
US8217448B2 (en) * 2007-01-04 2012-07-10 Freescale Semiconductor, Inc. Semiconductor device and method of forming a semiconductor device
JP5326217B2 (ja) * 2007-03-15 2013-10-30 富士電機株式会社 半導体装置およびその製造方法
JP5682097B2 (ja) * 2008-05-15 2015-03-11 富士電機株式会社 半導体装置
JP5439763B2 (ja) 2008-08-14 2014-03-12 富士電機株式会社 半導体装置および半導体装置の製造方法
JP2014086569A (ja) * 2012-10-24 2014-05-12 Renesas Electronics Corp 縦型パワーｍｏｓｆｅｔ

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52132684A (en) * 1976-04-29 1977-11-07 Sony Corp Insulating gate type field effect transistor
JPS5553462A (en) 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US5008725C2 (en) * 1979-05-14 2001-05-01 Internat Rectifer Corp Plural polygon source pattern for mosfet
JPS55163877A (en) * 1979-06-06 1980-12-20 Toshiba Corp Semiconductor integrated circuit device
US4345265A (en) * 1980-04-14 1982-08-17 Supertex, Inc. MOS Power transistor with improved high-voltage capability
US4680853A (en) * 1980-08-18 1987-07-21 International Rectifier Corporation Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
US4593302B1 (en) * 1980-08-18 1998-02-03 Int Rectifier Corp Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
JPS58206174A (ja) * 1982-05-26 1983-12-01 Toshiba Corp メサ型半導体装置およびその製造方法
DE3465225D1 (en) * 1983-02-17 1987-09-10 Nissan Motor A vertical-type mosfet and method of fabricating the same
US5286984A (en) * 1984-05-30 1994-02-15 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
US4605948A (en) * 1984-08-02 1986-08-12 Rca Corporation Semiconductor structure for electric field distribution
EP0211972A1 (de) * 1985-08-07 1987-03-04 Eaton Corporation EFET mit erhöhter Torelektrode
JPS6247162A (ja) * 1985-08-27 1987-02-28 Matsushita Electric Works Ltd 絶縁ゲ−ト型電界効果トランジスタの作製方法
JPH0758782B2 (ja) * 1986-03-19 1995-06-21 株式会社東芝 半導体装置
JPH07120794B2 (ja) * 1986-07-09 1995-12-20 株式会社東芝 Ｍｏｓ型半導体装置
EP0279403A3 (de) * 1987-02-16 1988-12-07 Nec Corporation Vertikaler MOS-Feldeffekttransistor mit hoher Spannungsfestigkeit und hoher Schaltgeschwindigkeit
JPH01272163A (ja) * 1987-08-07 1989-10-31 Fuji Electric Co Ltd 半導体装置の製造方法
JPH0766968B2 (ja) * 1987-08-24 1995-07-19 株式会社日立製作所 半導体装置及びその製造方法
DE3902300C3 (de) * 1988-01-30 1995-02-09 Toshiba Kawasaki Kk Abschaltthyristor
JPH0783119B2 (ja) * 1988-08-25 1995-09-06 日本電気株式会社 電界効果トランジスタ
US4901127A (en) * 1988-10-07 1990-02-13 General Electric Company Circuit including a combined insulated gate bipolar transistor/MOSFET
JPH02143566A (ja) * 1988-11-25 1990-06-01 Toshiba Corp 二重拡散形絶縁ゲート電界効果トランジスタ
JPH0834312B2 (ja) * 1988-12-06 1996-03-29 富士電機株式会社 縦形電界効果トランジスタ
JP2787921B2 (ja) * 1989-01-06 1998-08-20 三菱電機株式会社 絶縁ゲート型バイポーラトランジスタ
JPH02239670A (ja) * 1989-03-14 1990-09-21 Fujitsu Ltd 半導体装置
US4998151A (en) * 1989-04-13 1991-03-05 General Electric Company Power field effect devices having small cell size and low contact resistance
JPH077750B2 (ja) * 1989-05-15 1995-01-30 株式会社東芝 半導体装置の製造方法
JPH02312280A (ja) * 1989-05-26 1990-12-27 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ
US4927772A (en) * 1989-05-30 1990-05-22 General Electric Company Method of making high breakdown voltage semiconductor device
US5208471A (en) * 1989-06-12 1993-05-04 Hitachi, Ltd. Semiconductor device and manufacturing method therefor
JP2689703B2 (ja) * 1989-08-03 1997-12-10 富士電機株式会社 Ｍｏｓ型半導体装置
JPH03185737A (ja) * 1989-12-14 1991-08-13 Toshiba Corp 半導体装置の製造方法
JP2573736B2 (ja) * 1990-09-18 1997-01-22 三菱電機株式会社 高耐圧低抵抗半導体装置及びその製造方法
DE69029942T2 (de) * 1990-10-16 1997-08-28 Cons Ric Microelettronica Verfahren zur Herstellung von MOS-Leistungstransistoren mit vertikalem Strom
JPH04256367A (ja) * 1991-02-08 1992-09-11 Hitachi Ltd 半導体素子
JPH04349660A (ja) * 1991-05-28 1992-12-04 Toshiba Corp 半導体装置及び製造方法
JP3156300B2 (ja) * 1991-10-07 2001-04-16 株式会社デンソー 縦型半導体装置
JPH05206470A (ja) * 1991-11-20 1993-08-13 Nec Corp 絶縁ゲート型電界効果トランジスタ
US5317184A (en) * 1992-11-09 1994-05-31 Harris Corporation Device and method for improving current carrying capability in a semiconductor device
JPH06342914A (ja) * 1993-06-01 1994-12-13 Nec Corp 半導体装置の製造方法
EP0632503B1 (de) * 1993-07-01 2001-10-31 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Integrierte Randstruktur für Hochspannung-Halbleiteranordnungen und dazugehöriger Herstellungsprozess
JP2870402B2 (ja) * 1994-03-10 1999-03-17 株式会社デンソー 絶縁ゲート型電界効果トランジスタ
US5539232A (en) * 1994-05-31 1996-07-23 Kabushiki Kaisha Toshiba MOS composite type semiconductor device
EP0696054B1 (de) * 1994-07-04 2002-02-20 STMicroelectronics S.r.l. Verfahren zur Herstellung von Leistungsbauteilen hoher Dichte in MOS-Technologie

Also Published As

Publication number Publication date
JPH09232567A (ja) 1997-09-05
EP0772244B1 (de) 2000-03-22
EP0772244A1 (de) 1997-05-07
DE69515876T2 (de) 2000-08-17
US5900662A (en) 1999-05-04

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