DE69535071D1 - Solarzelle und Herstellungsverfahren - Google Patents

Solarzelle und Herstellungsverfahren

Info

Publication number
DE69535071D1
DE69535071D1 DE69535071T DE69535071T DE69535071D1 DE 69535071 D1 DE69535071 D1 DE 69535071D1 DE 69535071 T DE69535071 T DE 69535071T DE 69535071 T DE69535071 T DE 69535071T DE 69535071 D1 DE69535071 D1 DE 69535071D1
Authority
DE
Germany
Prior art keywords
solar cell
manufacturing process
solar
cell
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69535071T
Other languages
English (en)
Other versions
DE69535071T2 (de
Inventor
Masahito Asai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69535071D1 publication Critical patent/DE69535071D1/de
Application granted granted Critical
Publication of DE69535071T2 publication Critical patent/DE69535071T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/044—PV modules or arrays of single PV cells including bypass diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
DE69535071T 1994-04-28 1995-04-24 Solarzelle und Herstellungsverfahren Expired - Lifetime DE69535071T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9144394 1994-04-28
JP6091443A JP3032422B2 (ja) 1994-04-28 1994-04-28 太陽電池セルとその製造方法

Publications (2)

Publication Number Publication Date
DE69535071D1 true DE69535071D1 (de) 2006-08-03
DE69535071T2 DE69535071T2 (de) 2007-01-04

Family

ID=14026520

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69535071T Expired - Lifetime DE69535071T2 (de) 1994-04-28 1995-04-24 Solarzelle und Herstellungsverfahren

Country Status (5)

Country Link
US (1) US5609694A (de)
EP (1) EP0680099B1 (de)
JP (1) JP3032422B2 (de)
CN (1) CN1093690C (de)
DE (1) DE69535071T2 (de)

Families Citing this family (46)

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AUPM996094A0 (en) * 1994-12-08 1995-01-05 Pacific Solar Pty Limited Multilayer solar cells with bypass diode protection
EP0851511A1 (de) * 1996-12-24 1998-07-01 IMEC vzw Halbleitereinrichtung mit zwei selektiv diffundierten Bereichen
US6552414B1 (en) 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
JP3468670B2 (ja) * 1997-04-28 2003-11-17 シャープ株式会社 太陽電池セルおよびその製造方法
JPH10335267A (ja) * 1997-05-30 1998-12-18 Mitsubishi Electric Corp 半導体装置の製造方法
JP3754841B2 (ja) * 1998-06-11 2006-03-15 キヤノン株式会社 光起電力素子およびその製造方法
DE19845658C2 (de) * 1998-10-05 2001-11-15 Daimler Chrysler Ag Solarzelle mit Bypassdiode
US6482751B2 (en) 1999-04-01 2002-11-19 Winbond Electronics Corp. Titanium dioxide layer serving as a mask and its removed method
US6635507B1 (en) * 1999-07-14 2003-10-21 Hughes Electronics Corporation Monolithic bypass-diode and solar-cell string assembly
JP2001189483A (ja) * 1999-10-18 2001-07-10 Sharp Corp バイパス機能付太陽電池セルおよびバイパス機能付き多接合積層型太陽電池セルおよびそれらの製造方法
US6913713B2 (en) * 2002-01-25 2005-07-05 Konarka Technologies, Inc. Photovoltaic fibers
US6333457B1 (en) * 2000-08-29 2001-12-25 Sunpower Corporation Edge passivated silicon solar/photo cell and method of manufacture
AUPR174800A0 (en) * 2000-11-29 2000-12-21 Australian National University, The Semiconductor processing
GB0114896D0 (en) * 2001-06-19 2001-08-08 Bp Solar Ltd Process for manufacturing a solar cell
US20030178057A1 (en) * 2001-10-24 2003-09-25 Shuichi Fujii Solar cell, manufacturing method thereof and electrode material
KR20040068928A (ko) * 2001-11-29 2004-08-02 오리진 에너지 솔라 피티와이 리미티드 반도체 가공 방법
US7402448B2 (en) * 2003-01-31 2008-07-22 Bp Corporation North America Inc. Photovoltaic cell and production thereof
FR2854497B1 (fr) * 2003-04-29 2005-09-02 Commissariat Energie Atomique Procede de realisation d'un dispositif semi-conducteur a metallisations auto-alignees
JP2005101519A (ja) * 2003-09-05 2005-04-14 Hitachi Chem Co Ltd 太陽電池ユニット及び太陽電池モジュール
JP4557622B2 (ja) * 2004-07-29 2010-10-06 京セラ株式会社 太陽電池素子の接続構造及びこれを含む太陽電池モジュール
JP4481869B2 (ja) * 2005-04-26 2010-06-16 信越半導体株式会社 太陽電池の製造方法及び太陽電池並びに半導体装置の製造方法
JP5179869B2 (ja) * 2005-06-29 2013-04-10 三菱電機株式会社 太陽電池セル
EP1892767A1 (de) * 2006-08-22 2008-02-27 BP Solar Espana, S.A. Unipersonal Photovoltaikzelle und deren Herstellung
EP2654089A3 (de) 2007-02-16 2015-08-12 Nanogram Corporation Solarzellenstrukturen, Fotovoltaikmodule und entsprechende Verfahren
CN101889348B (zh) 2007-11-19 2013-03-27 应用材料公司 使用图案化蚀刻剂物质以形成太阳能电池接点的工艺
US20110056554A1 (en) * 2008-05-14 2011-03-10 Shinya Yamamoto Solar cell and method of manufacturing solar cell
TWI362759B (en) * 2008-06-09 2012-04-21 Delsolar Co Ltd Solar module and system composed of a solar cell with a novel rear surface structure
WO2010009295A2 (en) 2008-07-16 2010-01-21 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a metal layer mask
US7951637B2 (en) 2008-08-27 2011-05-31 Applied Materials, Inc. Back contact solar cells using printed dielectric barrier
KR101144810B1 (ko) 2009-07-06 2012-05-11 엘지전자 주식회사 태양전지용 전극 페이스트, 이를 이용한 태양전지, 및 태양전지의 제조방법
US8796060B2 (en) 2009-11-18 2014-08-05 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US8586862B2 (en) * 2009-11-18 2013-11-19 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US20110114147A1 (en) * 2009-11-18 2011-05-19 Solar Wind Ltd. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
JP5215330B2 (ja) * 2010-02-01 2013-06-19 シャープ株式会社 裏面電極型太陽電池の製造方法、裏面電極型太陽電池および裏面電極型太陽電池モジュール
JP2011258767A (ja) * 2010-06-09 2011-12-22 Sharp Corp 太陽電池
CN101930912B (zh) * 2010-07-20 2012-03-14 晶澳太阳能有限公司 一种利用掩模在硅片两面实现p+和n+扩散的工艺
JP5723143B2 (ja) * 2010-12-06 2015-05-27 シャープ株式会社 裏面電極型太陽電池の製造方法、および裏面電極型太陽電池
CN107658212B (zh) 2010-12-10 2021-08-06 帝人株式会社 半导体层叠体、半导体装置，以及它们的制造方法
KR101714780B1 (ko) * 2011-06-08 2017-03-09 엘지전자 주식회사 태양전지 모듈
KR101879781B1 (ko) * 2012-05-11 2018-08-16 엘지전자 주식회사 태양 전지, 불순물층의 형성 방법 및 태양 전지의 제조 방법
KR102065595B1 (ko) * 2013-01-17 2020-01-13 엘지전자 주식회사 태양 전지의 제조 방법
JP5667280B2 (ja) * 2013-05-24 2015-02-12 久保　征治 太陽電池及びその製造方法
NL2010941C2 (en) * 2013-06-07 2014-12-09 Stichting Energie Photovoltaic cell and method for manufacturing such a photovoltaic cell.
DE102013111748A1 (de) * 2013-10-24 2015-04-30 Hanwha Q Cells Gmbh Solarmodul und Solarmodulherstellungsverfahren
CN105261662B (zh) * 2015-10-23 2017-07-07 天津三安光电有限公司 一种具有扩散结旁路二极管的太阳电池芯片
CN117976743A (zh) * 2024-04-02 2024-05-03 浙江爱旭太阳能科技有限公司 太阳能电池片、电池组件和光伏***

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US4251285A (en) * 1979-08-14 1981-02-17 Westinghouse Electric Corp. Diffusion of dopant from optical coating and single step formation of PN junction in silicon solar cell and coating thereon
JPS58101471A (ja) * 1981-12-14 1983-06-16 Nippon Telegr & Teleph Corp <Ntt> 光電池
JPS5927579A (ja) * 1982-08-04 1984-02-14 Hoxan Corp 太陽電池の製造方法
JPS5994883A (ja) * 1982-11-24 1984-05-31 Matsushita Electric Ind Co Ltd 半導体基板用塗布組成物
JPS59101071A (ja) * 1982-12-02 1984-06-11 Comput Basic Mach Technol Res Assoc 磁気ヘツド位置決め装置
US4989059A (en) * 1988-05-13 1991-01-29 Mobil Solar Energy Corporation Solar cell with trench through pn junction
JPH0682853B2 (ja) * 1988-07-22 1994-10-19 シャープ株式会社 太陽電池の製造方法
GB8910636D0 (en) * 1989-05-09 1989-06-21 Kodak Ltd Photographic beta-ketoamide and photographic elements containing them
JPH0324768A (ja) * 1989-06-22 1991-02-01 Sharp Corp バイパスダイオード付太陽電池
DK170189B1 (da) * 1990-05-30 1995-06-06 Yakov Safir Fremgangsmåde til fremstilling af halvlederkomponenter, samt solcelle fremstillet deraf
JP2573083B2 (ja) * 1990-06-06 1997-01-16 シャープ株式会社 バイパスダイオード付太陽電池
JP2951061B2 (ja) * 1991-09-18 1999-09-20 三洋電機株式会社 太陽電池の製造方法
JP2837296B2 (ja) * 1991-10-17 1998-12-14 シャープ株式会社 太陽電池
US6800090B2 (en) * 2001-05-14 2004-10-05 Cardiac Dimensions, Inc. Mitral valve therapy device, system and method

Also Published As

Publication number Publication date
EP0680099A3 (de) 1997-08-20
CN1093690C (zh) 2002-10-30
JP3032422B2 (ja) 2000-04-17
JPH07297429A (ja) 1995-11-10
EP0680099B1 (de) 2006-06-21
DE69535071T2 (de) 2007-01-04
CN1120245A (zh) 1996-04-10
EP0680099A2 (de) 1995-11-02
US5609694A (en) 1997-03-11

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Legal Events

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