DE69417933D1 - Verfahren und Vorrichtung zur Herstellung von Halbleitervorrichtungen - Google Patents

Verfahren und Vorrichtung zur Herstellung von Halbleitervorrichtungen

Info

Publication number
DE69417933D1
DE69417933D1 DE69417933T DE69417933T DE69417933D1 DE 69417933 D1 DE69417933 D1 DE 69417933D1 DE 69417933 T DE69417933 T DE 69417933T DE 69417933 T DE69417933 T DE 69417933T DE 69417933 D1 DE69417933 D1 DE 69417933D1
Authority
DE
Germany
Prior art keywords
semiconductor devices
manufacturing semiconductor
manufacturing
devices
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69417933T
Other languages
English (en)
Other versions
DE69417933T2 (de
Inventor
Shunsuke Inoue
Junichi Hoshi
Takanori Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69417933D1 publication Critical patent/DE69417933D1/de
Publication of DE69417933T2 publication Critical patent/DE69417933T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
DE69417933T 1993-01-29 1994-01-27 Verfahren und Vorrichtung zur Herstellung von Halbleitervorrichtungen Expired - Fee Related DE69417933T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03244293A JP3402644B2 (ja) 1993-01-29 1993-01-29 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE69417933D1 true DE69417933D1 (de) 1999-05-27
DE69417933T2 DE69417933T2 (de) 1999-10-07

Family

ID=12359082

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69417933T Expired - Fee Related DE69417933T2 (de) 1993-01-29 1994-01-27 Verfahren und Vorrichtung zur Herstellung von Halbleitervorrichtungen

Country Status (4)

Country Link
US (1) US5468344A (de)
EP (1) EP0609069B1 (de)
JP (1) JP3402644B2 (de)
DE (1) DE69417933T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19621399A1 (de) * 1996-05-28 1997-12-04 Siemens Ag Verfahren zum Ätzen eines Halbleitersubstrats sowie Ätzanlage
JP2001338878A (ja) * 2000-03-21 2001-12-07 Sharp Corp サセプタおよび表面処理方法
US20040099375A1 (en) * 2002-11-21 2004-05-27 Yanghua He Edge-contact ring for a wafer pedestal
JP4817324B2 (ja) * 2007-02-05 2011-11-16 Ｏｋｉセミコンダクタ株式会社 半導体素子の製造方法
JP2012028790A (ja) * 2011-08-19 2012-02-09 Renesas Electronics Corp 半導体装置
US8999850B2 (en) * 2011-12-29 2015-04-07 Stmicroelectronics Pte Ltd Methods and apparatus for TMAH etching
JP6314477B2 (ja) 2013-12-26 2018-04-25 ソニー株式会社 電子デバイス
US10308541B2 (en) 2014-11-13 2019-06-04 Gerresheimer Glas Gmbh Glass forming machine particle filter, a plunger unit, a blow head, a blow head support and a glass forming machine adapted to or comprising said filter

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4473455A (en) * 1981-12-21 1984-09-25 At&T Bell Laboratories Wafer holding apparatus and method
JPS609129A (ja) * 1983-06-29 1985-01-18 Fujitsu Ltd ウエツト処理装置
SU1257730A1 (ru) * 1984-08-10 1986-09-15 Московский Институт Радиотехники,Электроники И Автоматики Устройство дл жидкостной обработки полупроводниковых пластин
JPH0451474Y2 (de) * 1986-05-15 1992-12-03
US5105556A (en) * 1987-08-12 1992-04-21 Hitachi, Ltd. Vapor washing process and apparatus
AT389959B (de) * 1987-11-09 1990-02-26 Sez Semiconduct Equip Zubehoer Vorrichtung zum aetzen von scheibenfoermigen gegenstaenden, insbesondere von siliziumscheiben
GB8928773D0 (en) * 1989-12-20 1990-02-28 Emi Plc Thorn Fountain etch system
KR0157990B1 (ko) * 1990-06-18 1999-02-01 이노우에 키요시 처리 장치

Also Published As

Publication number Publication date
DE69417933T2 (de) 1999-10-07
JP3402644B2 (ja) 2003-05-06
EP0609069B1 (de) 1999-04-21
JPH06232404A (ja) 1994-08-19
US5468344A (en) 1995-11-21
EP0609069A1 (de) 1994-08-03

Similar Documents

Publication Publication Date Title
DE69228787D1 (de) Verfahren und Anlage zur Herstellung von Halbleitervorrichtungen
DE69403593D1 (de) Gerät und Verfahren zur Herstellung einer Halbleitervorrichtung
DE69321864T2 (de) Verfahren und Vorrichtung zur Verkapselung von dreidimensionalen Halbleiterplättchen
DE3689735D1 (de) Verfahren und Gerät zur Herstellung von Halbleitervorrichtungen.
DE69128739T2 (de) Verfahren und Einrichtung zur Herstellung von ultrareinem Stickstoff
DE69431023D1 (de) Halbleiteraufbau und Verfahren zur Herstellung
DE69115234D1 (de) Verfahren und Vorrichtung zur Handhabung von Wafern.
DE69839723D1 (de) Verfahren und Vorrichtung zur Herstellung von Halbleiterkristallen
DE69014454D1 (de) Hochspannungs-Halbleiteranordnung und Verfahren zur Herstellung.
DE69424725D1 (de) Verfahren und Vorrichtung zur Herstellung einer Halbleiteranordnung
DE69229314T2 (de) Halbleiteranordnung und Verfahren zur Herstellung
DE69033900T2 (de) Halbleiteranordnung und Verfahren zu seiner Herstellung
DE69709230T2 (de) Verfahren und Vorrichtung zur Herstellung Halbleitern
DE69227290T2 (de) Halbleiteranordnung und Verfahren zur Herstellung
DE69417933T2 (de) Verfahren und Vorrichtung zur Herstellung von Halbleitervorrichtungen
DE69528683D1 (de) Halbleiterbauteil und Verfahren zur Herstellung desselben
DE69634395D1 (de) Methode und Vorrichtung zur Herstellung von Halbleiterbauelementen
DE69416619D1 (de) Halbleiterspeicheranordnung und Verfahren zur Herstellung
DE69401295D1 (de) Verfahren und Vorrichtung zur reproduzierbaren klemmfreien Ausrichtung von gekerbten Halbleiter-Scheiben
DE69114187D1 (de) Vorrichtung und Verfahren zur Herstellung von Halbleitereinrichtungen.
DE69813993D1 (de) Vorrichtung und Verfahren zur Herstellung von Armaturen
DE69500394D1 (de) Vorrichtung und Verfahren zur Herstellung von Halbleitern
DE69511992D1 (de) Halbleiteranordnung und Verfahren zur Herstellung
DE69310031D1 (de) Quartzgerät und Verfahren zur Herstellung
DE69325219T2 (de) Verfahren und Vorrichtung zur Herstellung von Metallgegenständen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee