DE69319372D1 - Halbleiterspeichervorrichtung mit Selbstauffrischungsfunktion - Google Patents
Halbleiterspeichervorrichtung mit SelbstauffrischungsfunktionInfo
- Publication number
- DE69319372D1 DE69319372D1 DE69319372T DE69319372T DE69319372D1 DE 69319372 D1 DE69319372 D1 DE 69319372D1 DE 69319372 T DE69319372 T DE 69319372T DE 69319372 T DE69319372 T DE 69319372T DE 69319372 D1 DE69319372 D1 DE 69319372D1
- Authority
- DE
- Germany
- Prior art keywords
- refresh address
- sub
- path
- self
- memory device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019920006728A KR950009390B1 (ko) | 1992-04-22 | 1992-04-22 | 반도체 메모리장치의 리프레시 어드레스 테스트회로 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69319372D1 true DE69319372D1 (de) | 1998-08-06 |
DE69319372T2 DE69319372T2 (de) | 1998-10-29 |
Family
ID=19332103
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69319372T Expired - Lifetime DE69319372T2 (de) | 1992-04-22 | 1993-04-21 | Halbleiterspeichervorrichtung mit Selbstauffrischungsfunktion |
Country Status (7)
Country | Link |
---|---|
US (1) | US5299168A (de) |
EP (1) | EP0567104B1 (de) |
JP (1) | JP2843481B2 (de) |
KR (1) | KR950009390B1 (de) |
CN (1) | CN1032337C (de) |
DE (1) | DE69319372T2 (de) |
TW (1) | TW212251B (de) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06150646A (ja) * | 1992-11-13 | 1994-05-31 | Nec Corp | 半導体メモリ |
JP3001342B2 (ja) * | 1993-02-10 | 2000-01-24 | 日本電気株式会社 | 記憶装置 |
JP3244340B2 (ja) * | 1993-05-24 | 2002-01-07 | 三菱電機株式会社 | 同期型半導体記憶装置 |
US5450364A (en) * | 1994-01-31 | 1995-09-12 | Texas Instruments Incorporated | Method and apparatus for production testing of self-refresh operations and a particular application to synchronous memory devices |
JP3426693B2 (ja) * | 1994-03-07 | 2003-07-14 | 株式会社日立製作所 | 半導体記憶装置 |
KR100372245B1 (ko) * | 1995-08-24 | 2004-02-25 | 삼성전자주식회사 | 워드라인순차제어반도체메모리장치 |
JPH09161478A (ja) * | 1995-12-12 | 1997-06-20 | Mitsubishi Electric Corp | 半導体記憶装置 |
US6392948B1 (en) | 1996-08-29 | 2002-05-21 | Micron Technology, Inc. | Semiconductor device with self refresh test mode |
KR100363108B1 (ko) * | 1998-12-30 | 2003-02-20 | 주식회사 하이닉스반도체 | 반도체 메모리장치와 그 장치의 리프레쉬주기 조절방법 |
JPH11345486A (ja) * | 1998-06-01 | 1999-12-14 | Mitsubishi Electric Corp | セルフ・リフレッシュ制御回路を備えたdramおよびシステムlsi |
KR100363103B1 (ko) * | 1998-10-20 | 2003-02-19 | 주식회사 하이닉스반도체 | 셀프 리프레쉬 발진기 |
KR100364128B1 (ko) * | 1999-04-08 | 2002-12-11 | 주식회사 하이닉스반도체 | 셀프리프레쉬 발진주기 측정장치 |
US6330203B1 (en) | 2000-12-26 | 2001-12-11 | Vanguard International Semiconductor Corporation | Test mode for verification of on-chip generated row addresses |
JP2002214296A (ja) * | 2001-01-16 | 2002-07-31 | Toshiba Corp | 半導体装置 |
US7184728B2 (en) * | 2002-02-25 | 2007-02-27 | Adc Telecommunications, Inc. | Distributed automatic gain control system |
DE10228527B3 (de) * | 2002-06-26 | 2004-03-04 | Infineon Technologies Ag | Verfahren zum Überprüfen der Refresh-Funktion eines Informationsspeichers |
KR101130378B1 (ko) | 2004-09-09 | 2012-03-27 | 엘지전자 주식회사 | 식기세척기 및 그 제어방법 |
US7599711B2 (en) | 2006-04-12 | 2009-10-06 | Adc Telecommunications, Inc. | Systems and methods for analog transport of RF voice/data communications |
DE102006020098A1 (de) * | 2006-04-29 | 2007-10-31 | Infineon Technologies Ag | Speicherschaltung und Verfahren zum Auffrischen von dynamischen Speicherzellen |
KR20100128045A (ko) | 2009-05-27 | 2010-12-07 | 삼성전자주식회사 | 반도체 메모리 장치의 셀프 리프레시 주기 측정 방법 |
KR101752154B1 (ko) | 2010-11-02 | 2017-06-30 | 삼성전자주식회사 | 로우 어드레스 제어 회로, 이를 포함하는 반도체 메모리 장치 및 로우 어드레스 제어 방법 |
KR101974108B1 (ko) * | 2012-07-30 | 2019-08-23 | 삼성전자주식회사 | 리프레쉬 어드레스 생성기, 이를 포함하는 휘발성 메모리 장치 및 휘발성 메모리 장치의 리프레쉬 방법 |
KR102194791B1 (ko) * | 2013-08-09 | 2020-12-28 | 에스케이하이닉스 주식회사 | 메모리, 이를 포함하는 메모리 시스템 및 메모리의 동작방법 |
EP3108627A4 (de) | 2014-02-18 | 2017-10-11 | CommScope Technologies LLC | Selektive kombination von uplink-signalen in verteilten antennensystemen |
CN105338131B (zh) * | 2015-11-30 | 2019-05-31 | 上海斐讯数据通信技术有限公司 | 一种dhcp服务器地址池容量的测试方法及*** |
CN114121074B (zh) * | 2020-08-31 | 2023-09-01 | 长鑫存储技术有限公司 | 存储阵列自刷新频率测试方法与存储阵列测试设备 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4672583A (en) * | 1983-06-15 | 1987-06-09 | Nec Corporation | Dynamic random access memory device provided with test circuit for internal refresh circuit |
JPS6035398A (ja) * | 1983-08-05 | 1985-02-23 | Nec Corp | ダイナミック型半導体記憶装置 |
JPS6083294A (ja) * | 1983-10-13 | 1985-05-11 | Nec Corp | 自動リフレツシユ回路 |
JPH087995B2 (ja) * | 1985-08-16 | 1996-01-29 | 富士通株式会社 | ダイナミツク半導体記憶装置のリフレツシユ方法および装置 |
EP0239916B1 (de) * | 1986-03-24 | 1994-06-08 | Nec Corporation | Halbleiterspeichervorrichtung mit einem Testmodus und einem Standardmodusbetrieb |
US4933908A (en) * | 1988-10-28 | 1990-06-12 | Unisys Corporation | Fault detection in memory refreshing system |
-
1992
- 1992-04-22 KR KR1019920006728A patent/KR950009390B1/ko not_active IP Right Cessation
-
1993
- 1993-04-20 TW TW082103030A patent/TW212251B/zh not_active IP Right Cessation
- 1993-04-21 EP EP93106502A patent/EP0567104B1/de not_active Expired - Lifetime
- 1993-04-21 DE DE69319372T patent/DE69319372T2/de not_active Expired - Lifetime
- 1993-04-22 CN CN93105919.4A patent/CN1032337C/zh not_active Expired - Lifetime
- 1993-04-22 US US08/050,780 patent/US5299168A/en not_active Expired - Lifetime
- 1993-04-22 JP JP5095973A patent/JP2843481B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR930022383A (ko) | 1993-11-24 |
TW212251B (en) | 1993-09-01 |
US5299168A (en) | 1994-03-29 |
CN1078820A (zh) | 1993-11-24 |
JP2843481B2 (ja) | 1999-01-06 |
DE69319372T2 (de) | 1998-10-29 |
KR950009390B1 (ko) | 1995-08-21 |
JPH06103757A (ja) | 1994-04-15 |
EP0567104B1 (de) | 1998-07-01 |
EP0567104A2 (de) | 1993-10-27 |
CN1032337C (zh) | 1996-07-17 |
EP0567104A3 (en) | 1996-04-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |