DE69125206D1 - Halbleiterspeicheranordnung - Google Patents
HalbleiterspeicheranordnungInfo
- Publication number
- DE69125206D1 DE69125206D1 DE69125206T DE69125206T DE69125206D1 DE 69125206 D1 DE69125206 D1 DE 69125206D1 DE 69125206 T DE69125206 T DE 69125206T DE 69125206 T DE69125206 T DE 69125206T DE 69125206 D1 DE69125206 D1 DE 69125206D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2142666A JPH0435064A (ja) | 1990-05-31 | 1990-05-31 | 半導体記憶装置 |
JP2155037A JPH0447586A (ja) | 1990-06-15 | 1990-06-15 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69125206D1 true DE69125206D1 (de) | 1997-04-24 |
DE69125206T2 DE69125206T2 (de) | 1997-10-09 |
Family
ID=26474592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69125206T Expired - Fee Related DE69125206T2 (de) | 1990-05-31 | 1991-05-24 | Halbleiterspeicheranordnung |
Country Status (4)
Country | Link |
---|---|
US (2) | US5321658A (de) |
EP (1) | EP0459316B1 (de) |
KR (1) | KR100208062B1 (de) |
DE (1) | DE69125206T2 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5325336A (en) * | 1992-09-10 | 1994-06-28 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device having power line arranged in a meshed shape |
JP2792795B2 (ja) * | 1992-10-29 | 1998-09-03 | 三菱電機株式会社 | 半導体集積装置 |
KR0137105B1 (ko) * | 1993-06-17 | 1998-04-29 | 모리시다 요이치 | 데이터 전송회로, 데이터선 구동회로, 증폭회로, 반도체 집적회로 및 반도체 기억장치 |
US5812148A (en) * | 1993-11-11 | 1998-09-22 | Oki Electric Industry Co., Ltd. | Serial access memory |
JPH07142582A (ja) * | 1993-11-12 | 1995-06-02 | Oki Electric Ind Co Ltd | 半導体入力回路 |
EP0685850B1 (de) * | 1994-05-27 | 2000-07-26 | AT&T Corp. | Integrierte Halbleiterschaltung mit einer SRAM-Zellenmatrix mit einseitiger Stromabfühlschaltung |
EP0791930B1 (de) * | 1995-10-02 | 2004-02-18 | Matsushita Electric Industrial Co., Ltd. | Elektrische Signalversorgungsschaltung und Halbleiterspeicheranordnung |
US5740116A (en) * | 1995-12-22 | 1998-04-14 | Townsend And Townsend And Crew, Llp | Current limiting during block writes of memory circuits |
JP3556388B2 (ja) * | 1996-04-23 | 2004-08-18 | 株式会社 沖マイクロデザイン | 半導体メモリ装置 |
JP3253549B2 (ja) * | 1997-02-13 | 2002-02-04 | 株式会社東芝 | 半導体集積回路装置 |
JP4118364B2 (ja) * | 1997-07-16 | 2008-07-16 | 日本テキサス・インスツルメンツ株式会社 | 半導体記憶装置 |
US6137316A (en) * | 1998-06-09 | 2000-10-24 | Siemens Aktiengesellschaft | Integrated circuit with improved off chip drivers |
DE19907155A1 (de) * | 1999-02-19 | 2000-08-31 | Siemens Ag | Integrierte Halbleiterspeicheranordnung mit Selbstpufferung von Versorgungsspannungen |
KR100340717B1 (ko) * | 1999-08-02 | 2002-06-20 | 윤종용 | 동적 반도체 메모리 장치 및 그를 내장한 마이크로비지에이 패키지 |
KR100338100B1 (ko) * | 1999-12-28 | 2002-05-24 | 박종섭 | 플래쉬 메모리 소자의 정전기 방전 특성 개선 방법 |
JP3453552B2 (ja) * | 2000-08-31 | 2003-10-06 | 松下電器産業株式会社 | 半導体記憶装置 |
KR100378685B1 (ko) * | 2000-12-29 | 2003-04-07 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 및 그의 센스 앰프 제어 회로 |
US6549443B1 (en) * | 2001-05-16 | 2003-04-15 | Rockwell Collins, Inc. | Single event upset resistant semiconductor circuit element |
US6920076B2 (en) | 2003-02-28 | 2005-07-19 | Union Semiconductor Technology Corporation | Interlayered power bus for semiconductor device |
US6912171B2 (en) * | 2003-02-28 | 2005-06-28 | Union Semiconductor Technology Corporation | Semiconductor device power bus system and method |
US7038523B2 (en) * | 2003-10-08 | 2006-05-02 | Infineon Technologies Ag | Voltage trimming circuit |
US20100220512A1 (en) * | 2009-03-02 | 2010-09-02 | Seagate Technology Llc | Programmable power source using array of resistive sense memory cells |
JP2011123970A (ja) * | 2009-12-14 | 2011-06-23 | Renesas Electronics Corp | 半導体記憶装置 |
US9973142B2 (en) | 2013-03-06 | 2018-05-15 | Vermont Slate and Copper Services, Inc. | Snow fence for a solar panel |
KR20150022242A (ko) | 2013-08-22 | 2015-03-04 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3621302A (en) * | 1969-01-15 | 1971-11-16 | Ibm | Monolithic-integrated semiconductor array having reduced power consumption |
GB2021825B (en) * | 1978-05-25 | 1982-10-27 | Aubusson R C | Semi conductor circuits |
FR2522432A1 (fr) * | 1982-02-26 | 1983-09-02 | Radiotechnique Compelec | Procede pour obtenir la decharge rapide d'une rangee de matrice memoire, et circuit de decharge dynamique correspondant |
JPS60140586A (ja) * | 1983-12-28 | 1985-07-25 | Nec Corp | メモリ回路 |
JPS6177198A (ja) * | 1984-09-21 | 1986-04-19 | Toshiba Corp | 半導体記憶装置 |
JPS62195787A (ja) * | 1986-02-24 | 1987-08-28 | Toshiba Corp | 半導体記憶装置 |
NL8702800A (nl) * | 1987-11-23 | 1989-06-16 | Philips Nv | Geintegreerde geheugenschakeling met interne voedingsspanningsregeling. |
JPH0758594B2 (ja) * | 1988-12-27 | 1995-06-21 | シャープ株式会社 | ダイナミック型半導体記憶装置 |
DE69024680T2 (de) * | 1989-03-17 | 1996-08-01 | Matsushita Electronics Corp | Halbleiter-Speichereinrichtung |
JPH0376263A (ja) * | 1989-08-18 | 1991-04-02 | Fujitsu Ltd | ウエハスケール集積回路装置 |
JPH0693484B2 (ja) * | 1989-11-10 | 1994-11-16 | 株式会社東芝 | 半導体集積回路 |
US5280450A (en) * | 1990-05-14 | 1994-01-18 | Hitachi, Ltd. | High-speed semicondustor memory integrated circuit arrangement having power and signal lines with reduced resistance |
DE69028625T2 (de) * | 1990-06-12 | 1997-01-30 | Fujitsu Ltd | Dynamische Speichereinrichtung mit wahlfreiem Zugriff |
US5173873A (en) * | 1990-06-28 | 1992-12-22 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High speed magneto-resistive random access memory |
JPH0562461A (ja) * | 1991-04-09 | 1993-03-12 | Mitsubishi Electric Corp | 半導体記憶装置 |
KR940003410B1 (ko) * | 1991-08-01 | 1994-04-21 | 삼성전자 주식회사 | 망사 구조의 전원선을 가지는 반도체 메모리 장치 |
-
1991
- 1991-05-20 US US07/702,496 patent/US5321658A/en not_active Expired - Lifetime
- 1991-05-24 DE DE69125206T patent/DE69125206T2/de not_active Expired - Fee Related
- 1991-05-24 EP EP91108448A patent/EP0459316B1/de not_active Expired - Lifetime
- 1991-05-31 KR KR1019910009085A patent/KR100208062B1/ko not_active IP Right Cessation
-
1995
- 1995-03-02 US US08/397,730 patent/US5517444A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0459316A2 (de) | 1991-12-04 |
DE69125206T2 (de) | 1997-10-09 |
US5517444A (en) | 1996-05-14 |
KR910020735A (ko) | 1991-12-20 |
EP0459316B1 (de) | 1997-03-19 |
EP0459316A3 (en) | 1992-07-22 |
KR100208062B1 (ko) | 1999-07-15 |
US5321658A (en) | 1994-06-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |