DE69124646T2 - MOS-Halbleiterbauelement und dessen Herstellungsverfahren - Google Patents

MOS-Halbleiterbauelement und dessen Herstellungsverfahren

Info

Publication number
DE69124646T2
DE69124646T2 DE69124646T DE69124646T DE69124646T2 DE 69124646 T2 DE69124646 T2 DE 69124646T2 DE 69124646 T DE69124646 T DE 69124646T DE 69124646 T DE69124646 T DE 69124646T DE 69124646 T2 DE69124646 T2 DE 69124646T2
Authority
DE
Germany
Prior art keywords
semiconductor device
manufacturing process
mos semiconductor
mos
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69124646T
Other languages
English (en)
Other versions
DE69124646D1 (de
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2200303A external-priority patent/JP3054178B2/ja
Priority claimed from JP2210042A external-priority patent/JPH0758792B2/ja
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of DE69124646D1 publication Critical patent/DE69124646D1/de
Application granted granted Critical
Publication of DE69124646T2 publication Critical patent/DE69124646T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69124646T 1990-07-26 1991-07-26 MOS-Halbleiterbauelement und dessen Herstellungsverfahren Expired - Lifetime DE69124646T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2200303A JP3054178B2 (ja) 1990-07-26 1990-07-26 絶縁ゲイト型電界効果半導体装置
JP2210042A JPH0758792B2 (ja) 1990-08-07 1990-08-07 縦チャネル型絶縁ゲイト型電界効果半導体装置の作製方法

Publications (2)

Publication Number Publication Date
DE69124646D1 DE69124646D1 (de) 1997-03-27
DE69124646T2 true DE69124646T2 (de) 1997-09-04

Family

ID=26512091

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69124646T Expired - Lifetime DE69124646T2 (de) 1990-07-26 1991-07-26 MOS-Halbleiterbauelement und dessen Herstellungsverfahren

Country Status (4)

Country Link
US (2) US5302843A (de)
EP (1) EP0472297B1 (de)
KR (1) KR950009793B1 (de)
DE (1) DE69124646T2 (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7335570B1 (en) 1990-07-24 2008-02-26 Semiconductor Energy Laboratory Co., Ltd. Method of forming insulating films, capacitances, and semiconductor devices
EP0468758B1 (de) * 1990-07-24 1997-03-26 Semiconductor Energy Laboratory Co., Ltd. Verfahren zum Herstellen isolierender Filme, Kapazitäten und Halbleiteranordnungen
US5464780A (en) * 1990-07-25 1995-11-07 Semiconductor Energy Laboratory Co., Ltd. Method of forming insulated gate effect transistor in a substrate depression
JPH0793441B2 (ja) * 1992-04-24 1995-10-09 ヒュンダイ エレクトロニクス インダストリーズ カンパニー リミテッド 薄膜トランジスタ及びその製造方法
KR970008820B1 (en) * 1993-12-28 1997-05-29 Hyundai Electronics Ind Mos fet manufacture
US5538909A (en) * 1995-01-19 1996-07-23 United Microelectronics Corporation Method of making a shallow trench large-angle-tilt implanted drain device
KR0144242B1 (ko) * 1995-07-21 1998-07-01 김광호 반도체 메모리장치의 모오스 캐패시터의 크랙 방지구조
US5640023A (en) * 1995-08-31 1997-06-17 Sgs-Thomson Microelectronics, Inc. Spacer-type thin-film polysilicon transistor for low-power memory devices
KR100221627B1 (ko) * 1996-07-29 1999-09-15 구본준 반도체장치 및 그의 제조방법
US5885864A (en) * 1996-10-24 1999-03-23 Micron Technology, Inc. Method for forming compact memory cell using vertical devices
DE19758430C2 (de) * 1997-04-28 2002-09-05 Infineon Technologies Ag Integrierte Schaltungsanordnung mit mindestens einem vertikalen MOS-Transistor und Verfahren zu deren Herstellung
US6326226B1 (en) 1997-07-15 2001-12-04 Lg. Philips Lcd Co., Ltd. Method of crystallizing an amorphous film
DE19746900C2 (de) * 1997-10-23 2002-02-14 Infineon Technologies Ag Vertikaler MOS-Transistor und Verfahren zu dessen Herstellung
KR100261305B1 (ko) * 1997-12-17 2000-07-01 이계철 수직 채널 트랜지스터의 제조방법
US6312979B1 (en) 1998-04-28 2001-11-06 Lg.Philips Lcd Co., Ltd. Method of crystallizing an amorphous silicon layer
US6524662B2 (en) 1998-07-10 2003-02-25 Jin Jang Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof
US6784034B1 (en) 1998-10-13 2004-08-31 Lg. Philips Lcd Co., Ltd. Method for fabricating a thin film transistor
US6558986B1 (en) 1998-09-03 2003-05-06 Lg.Philips Lcd Co., Ltd Method of crystallizing amorphous silicon thin film and method of fabricating polysilicon thin film transistor using the crystallization method
KR100317641B1 (ko) 1999-05-21 2001-12-22 구본준, 론 위라하디락사 박막 트랜지스터 및 그 제조방법
KR20020049875A (ko) 2000-12-20 2002-06-26 윤종용 반도체 메모리 소자의 강유전체 커패시터 및 그 제조방법
WO2004021445A1 (ja) * 2002-08-28 2004-03-11 National Institute Of Advanced Industrial Science And Technology 二重ゲート型ｍｏｓ電界効果トランジスタ及びその作製方法
DE10241173A1 (de) * 2002-09-05 2004-03-11 Infineon Technologies Ag Halbleiterspeicher mit vertikalen Speichertransistoren in einer Zellenfeldanordnung mit 1-2F2-Zellen
KR100558041B1 (ko) * 2003-08-19 2006-03-07 매그나칩 반도체 유한회사 반도체 소자의 트랜지스터 및 그 제조 방법
US7348243B2 (en) * 2003-12-27 2008-03-25 Dongbu Electronics Co., Ltd. Semiconductor device and method for fabricating the same
US20060046392A1 (en) * 2004-08-26 2006-03-02 Manning H M Methods of forming vertical transistor structures
KR100724560B1 (ko) * 2005-11-18 2007-06-04 삼성전자주식회사 결정질 반도체층을 갖는 반도체소자, 그의 제조방법 및그의 구동방법
TWI574259B (zh) 2010-09-29 2017-03-11 半導體能源研究所股份有限公司 半導體記憶體裝置和其驅動方法
US9166004B2 (en) 2010-12-23 2015-10-20 Intel Corporation Semiconductor device contacts
TWI520273B (zh) 2011-02-02 2016-02-01 半導體能源研究所股份有限公司 半導體儲存裝置
US8780614B2 (en) 2011-02-02 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US9431400B2 (en) 2011-02-08 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method for manufacturing the same
US8975680B2 (en) 2011-02-17 2015-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method manufacturing semiconductor memory device
WO2012121265A1 (en) 2011-03-10 2012-09-13 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for manufacturing the same
US8686486B2 (en) 2011-03-31 2014-04-01 Semiconductor Energy Laboratory Co., Ltd. Memory device
US8575584B2 (en) 2011-09-03 2013-11-05 Avalanche Technology Inc. Resistive memory device having vertical transistors and method for making the same
JP6100559B2 (ja) 2012-03-05 2017-03-22 株式会社半導体エネルギー研究所 半導体記憶装置
US10103247B1 (en) * 2017-10-17 2018-10-16 Globalfoundries Inc. Vertical transistor having buried contact, and contacts using work function metals and silicides

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5537250U (de) * 1978-08-31 1980-03-10
GB2103879B (en) * 1981-08-19 1985-04-11 Secr Defence Method for producing a vertical channel transistor
US4554570A (en) * 1982-06-24 1985-11-19 Rca Corporation Vertically integrated IGFET device
US4649406A (en) * 1982-12-20 1987-03-10 Fujitsu Limited Semiconductor memory device having stacked capacitor-type memory cells
KR920010461B1 (ko) * 1983-09-28 1992-11-28 가부시끼가이샤 히다찌세이사꾸쇼 반도체 메모리와 그 제조 방법
JPS61150366A (ja) * 1984-12-25 1986-07-09 Nec Corp Ｍｉｓ型メモリ−セル
JPS62128175A (ja) * 1985-11-29 1987-06-10 Hitachi Ltd 半導体装置
US4818715A (en) * 1987-07-09 1989-04-04 Industrial Technology Research Institute Method of fabricating a LDDFET with self-aligned silicide
US4963504A (en) * 1987-11-23 1990-10-16 Xerox Corporation Method for fabricating double implanted LDD transistor self-aligned with gate
JPH01248557A (ja) * 1988-03-29 1989-10-04 Toshiba Corp 半導体記憶装置およびその製造方法
JPH01293666A (ja) * 1988-05-23 1989-11-27 Seiko Instr Inc 絶縁ゲート電界効果トランジスタ
JP2667465B2 (ja) * 1988-09-14 1997-10-27 株式会社東芝 半導体装置
US5181088A (en) * 1988-09-14 1993-01-19 Kabushiki Kaisha Toshiba Vertical field effect transistor with an extended polysilicon channel region
US5047812A (en) * 1989-02-27 1991-09-10 Motorola, Inc. Insulated gate field effect device
US5136534A (en) * 1989-06-30 1992-08-04 Texas Instruments Incorporated Method and apparatus for a filament channel pass gate ferroelectric capacitor memory cell

Also Published As

Publication number Publication date
KR950009793B1 (ko) 1995-08-28
US5403763A (en) 1995-04-04
US5302843A (en) 1994-04-12
DE69124646D1 (de) 1997-03-27
EP0472297A1 (de) 1992-02-26
EP0472297B1 (de) 1997-02-12

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