GB898872A - Improvements in the manufacture of crystalline silicon - Google Patents

Improvements in the manufacture of crystalline silicon

Info

Publication number
GB898872A
GB898872A GB2783159A GB2783159A GB898872A GB 898872 A GB898872 A GB 898872A GB 2783159 A GB2783159 A GB 2783159A GB 2783159 A GB2783159 A GB 2783159A GB 898872 A GB898872 A GB 898872A
Authority
GB
United Kingdom
Prior art keywords
silicon
tube
carrier member
rod
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2783159A
Inventor
George Oswald Morris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Imperial Chemical Industries Ltd
Original Assignee
Imperial Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imperial Chemical Industries Ltd filed Critical Imperial Chemical Industries Ltd
Priority to GB2783159A priority Critical patent/GB898872A/en
Priority to DEJ18555A priority patent/DE1170913B/en
Publication of GB898872A publication Critical patent/GB898872A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

<PICT:0898872/III/1> <PICT:0898872/III/2> <PICT:0898872/III/3> A molten zone is passed downwards in an inert or reducing atmosphere through a mass of silicon pieces or granules contained in a silica tube, the upper surface of the mass being in contact with a carrier member so as to form a rod of reduced diameter attached to the carrier member. The carrier member may be of metal, graphite, a ceramic material, or silicon. The silica tube may be externally air- or water-cooled. The molten zone may be produced by radiant or induction heating. In the latter case, the mass of silicon may be preheated by conduction from the carrier member or by radiation. Relative movement may be effected between the carrier member and the tube so as to control the diameter of the rod. A molten zone may be passed at a rate of 6-12 inches/hr. through silicon particles of up to 1/4 inch mesh size in a 1 inch diameter tube. As shown in Figs. 1 and 2, a molten zone is formed in a rod of silicon 3 by means of a resistance heating element 4 and induction heating coil 5, and this molten zone is caused to pass down through a mass of silicon 2 in a silica tube 1 by relative movement of coil 5. The resulting elongated rod may be removed from the tube and zone-melted in known manner or may be further zone-melted in situ in the same or the reverse direction provided that a layer of unmelted silicon is retained at the bottom of the tube. As shown in Fig. 3, a second carrier member 10 is held in a chuck 9 of a closure member 8 at the lower end of an open-ended tube to enable repeated zone-refining to take place in situ without distortion. After initial formation of a single rod using a mono-crystalline silicon seed 10, a molten zone may be passed upwards to produce a mono-crystalline rod.
GB2783159A 1959-08-14 1959-08-14 Improvements in the manufacture of crystalline silicon Expired GB898872A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB2783159A GB898872A (en) 1959-08-14 1959-08-14 Improvements in the manufacture of crystalline silicon
DEJ18555A DE1170913B (en) 1959-08-14 1960-08-11 Process for the production of crystalline silicon in rod form

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2783159A GB898872A (en) 1959-08-14 1959-08-14 Improvements in the manufacture of crystalline silicon

Publications (1)

Publication Number Publication Date
GB898872A true GB898872A (en) 1962-06-14

Family

ID=10266014

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2783159A Expired GB898872A (en) 1959-08-14 1959-08-14 Improvements in the manufacture of crystalline silicon

Country Status (2)

Country Link
DE (1) DE1170913B (en)
GB (1) GB898872A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0349117A2 (en) * 1988-07-01 1990-01-03 Hemlock Semiconductor Corporation Trace metals analysis in semiconductor material
EP0450494A1 (en) * 1990-03-30 1991-10-09 Sumitomo Sitix Corporation Manufacturing method for single-crystal silicon
US5499598A (en) * 1993-03-17 1996-03-19 Tokuyama Corporation Method for producing a silicon rod
WO2014019789A1 (en) * 2012-07-31 2014-02-06 Siltronic Ag Method for producing a monocrystal from silicon

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE973271C (en) * 1951-10-26 1960-01-07 Karlheinz Belzer Method and device for hardening toothed scissors
US2904642A (en) * 1955-11-08 1959-09-15 Du Mont Allen B Lab Inc Gamma correction circuit
NL98843C (en) * 1956-07-02

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0349117A2 (en) * 1988-07-01 1990-01-03 Hemlock Semiconductor Corporation Trace metals analysis in semiconductor material
EP0349117A3 (en) * 1988-07-01 1990-10-31 Hemlock Semiconductor Corporation Trace metals analysis in semiconductor material
EP0450494A1 (en) * 1990-03-30 1991-10-09 Sumitomo Sitix Corporation Manufacturing method for single-crystal silicon
US5499598A (en) * 1993-03-17 1996-03-19 Tokuyama Corporation Method for producing a silicon rod
WO2014019789A1 (en) * 2012-07-31 2014-02-06 Siltronic Ag Method for producing a monocrystal from silicon

Also Published As

Publication number Publication date
DE1170913B (en) 1964-05-27

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