DE69114881D1 - Analysevorrichtung zur Rettung von Halbleiterspeicherfehlern. - Google Patents

Analysevorrichtung zur Rettung von Halbleiterspeicherfehlern.

Info

Publication number: DE69114881D1
Authority: DE; Germany
Prior art keywords: semiconductor memory; analysis device; memory errors; saving semiconductor; saving
Prior art date: 1990-03-19
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69114881T

Other languages

English (en)

Other versions

DE69114881T2 (de

Inventor

Kenichi Fujisaki

Noboru Okino

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Advantest Corp

Original Assignee

Advantest Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1990-03-19

Filing date

1991-03-15

Publication date

1996-01-11

1991-03-15 Application filed by Advantest Corp filed Critical Advantest Corp

1996-01-11 Publication of DE69114881D1 publication Critical patent/DE69114881D1/de

1996-05-23 Application granted granted Critical

1996-05-23 Publication of DE69114881T2 publication Critical patent/DE69114881T2/de

2011-03-16 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/72—Masking faults in memories by using spares or by reconfiguring with optimized replacement algorithms

DE69114881T 1990-03-19 1991-03-15 Analysevorrichtung zur Rettung von Halbleiterspeicherfehlern. Expired - Fee Related DE69114881T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2069093A JP2842923B2 (ja)	1990-03-19	1990-03-19	半導体メモリ試験装置

Publications (2)

Publication Number	Publication Date
DE69114881D1 true DE69114881D1 (de)	1996-01-11
DE69114881T2 DE69114881T2 (de)	1996-05-23

Family

ID=13392647

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69114881T Expired - Fee Related DE69114881T2 (de)	1990-03-19	1991-03-15	Analysevorrichtung zur Rettung von Halbleiterspeicherfehlern.

Country Status (5)

Country	Link
US (1)	US5410687A (de)
EP (1)	EP0447995B1 (de)
JP (1)	JP2842923B2 (de)
KR (1)	KR950004622B1 (de)
DE (1)	DE69114881T2 (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2577120Y2 (ja) *	1993-04-15	1998-07-23	株式会社アドバンテスト	過剰パルス印加の禁止回路
JP3605150B2 (ja) *	1994-08-22	2004-12-22	株式会社アドバンテスト	アドレスパターン発生器
US5610925A (en) *	1995-03-27	1997-03-11	Advantest Corporation	Failure analyzer for semiconductor tester
JPH0935496A (ja) *	1995-07-12	1997-02-07	Advantest Corp	メモリ試験装置
JPH0963300A (ja) *	1995-08-22	1997-03-07	Advantest Corp	半導体メモリ試験装置のフェイル解析装置
WO1997011381A1 (fr) *	1995-09-22	1997-03-27	Advantest Corporation	Controleur de memoire
JPH09147600A (ja) *	1995-11-29	1997-06-06	Advantest Corp	半導体試験用救済アドレス解析方式
ATE200161T1 (de) *	1996-01-04	2001-04-15	Infineon Technologies Ag	Vorrichtung und verfahren zur erfassung und bewertung eines räumlich diskreten punktmusters
JP3642904B2 (ja) *	1996-11-26	2005-04-27	株式会社アドバンテスト	フェイルカウント方法及びその装置
JP2991138B2 (ja) *	1996-12-09	1999-12-20	日本電気株式会社	メモリｌｓｉの不良解析方法
JP3367848B2 (ja) *	1996-12-10	2003-01-20	株式会社東芝	半導体デバイスのテスト装置
JPH10289165A (ja) *	1997-04-14	1998-10-27	Ando Electric Co Ltd	Ｉｃテスタの不良解析装置及びｉｃテスタのメモリデバイス測定装置
US6032264A (en) *	1997-04-22	2000-02-29	Micron Technology, Inc.	Apparatus and method implementing repairs on a memory device
GB2369909B (en) *	1997-12-04	2002-08-28	Samsung Electronics Co Ltd	Faulty cell repairing method for a semiconductor memory
US6049505A (en) *	1998-05-22	2000-04-11	Micron Technology, Inc.	Method and apparatus for generating memory addresses for testing memory devices
US6175936B1 (en) *	1998-07-17	2001-01-16	Lucent Technologies Inc.	Apparatus for detecting faults in multiple computer memories
US6425095B1 (en) *	1998-08-14	2002-07-23	Advantest Corporation	Memory testing apparatus
DE19838861A1 (de) *	1998-08-26	2000-03-02	Siemens Ag	Verfahren zur Reparatur von defekten Speicherzellen eines integrierten Speichers
US6240525B1 (en) *	1998-11-17	2001-05-29	Oak Technology, Inc.	Method and apparatus for re-addressing defective memory cells
DE19901206C2 (de) *	1999-01-14	2003-02-06	Infineon Technologies Ag	Verfahren zur Reparatur von defekten Speicherzellen eines integrierten Halbleiterspeichers
US6405333B1 (en) *	1999-03-31	2002-06-11	Teradyne, Inc.	Fail array memory control circuit with selective input disable
JP4230061B2 (ja) *	1999-07-21	2009-02-25	株式会社アドバンテスト	不良救済解析器を搭載したメモリ試験装置
TW473728B (en) *	1999-07-22	2002-01-21	Koninkl Philips Electronics Nv	A method for testing a memory array and a memory-based device so testable with a fault response signalizing mode for when finding predetermined correspondence between fault patterns signalizing one such fault pattern only in the form of a compressed resp
US6256757B1 (en) *	2000-01-24	2001-07-03	Credence Systems Corporation	Apparatus for testing memories with redundant storage elements
US6553521B1 (en) *	2000-02-24	2003-04-22	Infineon Technologies, Richmond L.P.	Method for efficient analysis semiconductor failures
US6907385B2 (en) *	2000-10-19	2005-06-14	Advantest Corporation	Memory defect redress analysis treating method, and memory testing apparatus performing the method
US20020091965A1 (en) *	2000-12-22	2002-07-11	Mark Moshayedi	System and method for early detection of impending failure of a data storage system
US20020108421A1 (en) *	2001-02-13	2002-08-15	Cunningham David H.	Forming machine for sheets of formable material
DE10134654A1 (de) *	2001-07-20	2003-02-13	Infineon Technologies Ag	Verfahren zur Fehleranalyse von Speichermodulen
US6751760B2 (en) *	2001-11-20	2004-06-15	Chipmos Technologies Inc.	Method and system for performing memory repair analysis
EP1517334B1 (de) *	2003-09-16	2010-10-27	Infineon Technologies AG	On-chip Diagnose-Vefahren und -Block zur Speicherreparatur mit gemischter Redundanz ("IO" Redundanz und "Word-register" Redundanz)
US8977912B2 (en) *	2007-05-07	2015-03-10	Macronix International Co., Ltd.	Method and apparatus for repairing memory
TW200937438A (en) *	2008-02-20	2009-09-01	Inventec Corp	A memory writing interference test system and method thereof
JP5087704B2 (ja) *	2009-07-13	2012-12-05	株式会社アドバンテスト	試験装置および救済解析方法
JP4956597B2 (ja) *	2009-10-05	2012-06-20	株式会社アドバンテスト	半導体試験装置
CN102893263B (zh) *	2011-05-16	2016-12-07	华为技术有限公司	内存检测方法和内存检测装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3753244A (en) *	1971-08-18	1973-08-14	Ibm	Yield enhancement redundancy technique
DE3069611D1 (en) *	1979-12-27	1984-12-13	Fujitsu Ltd	Apparatus and method for testing semiconductor memory devices
US4460997A (en) *	1981-07-15	1984-07-17	Pacific Western Systems Inc.	Memory tester having memory repair analysis capability
US4460999A (en) *	1981-07-15	1984-07-17	Pacific Western Systems, Inc.	Memory tester having memory repair analysis under pattern generator control
US4736373A (en) *	1981-08-03	1988-04-05	Pacific Western Systems, Inc.	Memory tester having concurrent failure data readout and memory repair analysis
DE3311427A1 (de) *	1983-03-29	1984-10-04	Siemens AG, 1000 Berlin und 8000 München	Integrierter dynamischer schreib-lesespeicher
US4586178A (en) *	1983-10-06	1986-04-29	Eaton Corporation	High speed redundancy processor
US4751656A (en) *	1986-03-10	1988-06-14	International Business Machines Corporation	Method for choosing replacement lines in a two dimensionally redundant array
US4837747A (en) *	1986-11-29	1989-06-06	Mitsubishi Denki Kabushiki Kaisha	Redundary circuit with a spare main decoder responsive to an address of a defective cell in a selected cell block
JPS63239696A (ja) *	1987-03-27	1988-10-05	Toshiba Corp	冗長回路付メモリの試験装置
JPH081755B2 (ja) *	1989-06-26	1996-01-10	日本電気株式会社	置換アドレス判定回路

1990
- 1990-03-19 JP JP2069093A patent/JP2842923B2/ja not_active Expired - Lifetime
1991
- 1991-03-15 DE DE69114881T patent/DE69114881T2/de not_active Expired - Fee Related
- 1991-03-15 EP EP91104068A patent/EP0447995B1/de not_active Expired - Lifetime
- 1991-03-19 KR KR1019910004326A patent/KR950004622B1/ko not_active IP Right Cessation
1993
- 1993-12-01 US US08/159,704 patent/US5410687A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0447995A2 (de)	1991-09-25
JP2842923B2 (ja)	1999-01-06
EP0447995B1 (de)	1995-11-29
JPH03269279A (ja)	1991-11-29
US5410687A (en)	1995-04-25
DE69114881T2 (de)	1996-05-23
EP0447995A3 (en)	1992-09-23
KR950004622B1 (ko)	1995-05-03

Legal Events

Date	Code	Title	Description
1997-01-02	8364	No opposition during term of opposition
2010-01-21	8339	Ceased/non-payment of the annual fee

Publication	Publication Date	Title
DE69114881D1 (de)	1996-01-11	Analysevorrichtung zur Rettung von Halbleiterspeicherfehlern.
NL191814C (nl)	1996-08-02	Halfgeleidergeheugeninrichting.
DE69007827D1 (de)	1994-05-11	Halbleiter-Speicher.
DE68923505D1 (de)	1995-08-24	Halbleiterspeicheranordnung.
DE3889097D1 (de)	1994-05-19	Halbleiterspeicheranordnung.
DE69011738D1 (de)	1994-09-29	Halbleiter-Speichereinrichtung.
DE3875767D1 (de)	1992-12-17	Halbleiter-festwertspeichereinrichtung.
DE3887224D1 (de)	1994-03-03	Halbleiterspeicheranordnung.
DE68917848D1 (de)	1994-10-06	Halbleiteranordnung.
DE69016153D1 (de)	1995-03-02	Nichtflüchtige Halbleiterspeicheranordnung.
DE68918367D1 (de)	1994-10-27	Halbleiterspeicheranordnung.
DE69022310D1 (de)	1995-10-19	Halbleiterspeichergerät.
DE3884022D1 (de)	1993-10-21	Halbleiterspeicheranordnung.
DE69022537D1 (de)	1995-10-26	Halbleiterspeicheranordnung.
DE68921421D1 (de)	1995-04-06	Halbleitervorrichtung.
DE69023468D1 (de)	1995-12-14	Halbleiter-Speichereinrichtung.
DE68923588D1 (de)	1995-08-31	Halbleiterspeicheranordnung.
DE3889872D1 (de)	1994-07-07	Halbleiterspeicheranordnung.
DE69022312D1 (de)	1995-10-19	Halbleiterspeichergerät.
DE69017518D1 (de)	1995-04-13	Halbleiterspeicheranordnung.
DE69023258D1 (de)	1995-12-07	Halbleiter-Speichereinrichtung.
DE3789783D1 (de)	1994-06-16	Halbleiterspeicheranordnung.
DE68924080D1 (de)	1995-10-12	Halbleiterspeichervorrichtung.
NL194178B (nl)	2001-04-02	Halfgeleidergeheugeneenheid.
DE3876666D1 (de)	1993-01-28	Halbleiter-festwertspeichereinrichtung.