GB2369909B - Faulty cell repairing method for a semiconductor memory - Google Patents

Faulty cell repairing method for a semiconductor memory

Info

Publication number
GB2369909B
GB2369909B GB0205031A GB0205031A GB2369909B GB 2369909 B GB2369909 B GB 2369909B GB 0205031 A GB0205031 A GB 0205031A GB 0205031 A GB0205031 A GB 0205031A GB 2369909 B GB2369909 B GB 2369909B
Authority
GB
United Kingdom
Prior art keywords
semiconductor memory
repairing method
faulty cell
cell repairing
faulty
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0205031A
Other versions
GB0205031D0 (en
GB2369909A (en
Inventor
Kye-Hyun Kyung
Byung-Sik Moon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019970065906A external-priority patent/KR100252053B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB0205031D0 publication Critical patent/GB0205031D0/en
Publication of GB2369909A publication Critical patent/GB2369909A/en
Application granted granted Critical
Publication of GB2369909B publication Critical patent/GB2369909B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/848—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by adjacent switching
GB0205031A 1997-12-04 1998-05-22 Faulty cell repairing method for a semiconductor memory Expired - Fee Related GB2369909B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019970065906A KR100252053B1 (en) 1997-12-04 1997-12-04 Semiconductor memory device having column direction data in-out line and fail cell reparing circuit and method thereof
GB9811155A GB2332292B (en) 1997-12-04 1998-05-22 A semiconductor memory device

Publications (3)

Publication Number Publication Date
GB0205031D0 GB0205031D0 (en) 2002-04-17
GB2369909A GB2369909A (en) 2002-06-12
GB2369909B true GB2369909B (en) 2002-08-28

Family

ID=26313733

Family Applications (2)

Application Number Title Priority Date Filing Date
GB0205031A Expired - Fee Related GB2369909B (en) 1997-12-04 1998-05-22 Faulty cell repairing method for a semiconductor memory
GB0205033A Expired - Fee Related GB2369910B (en) 1997-12-04 1998-05-22 Faulty cell repairing method for a semiconductor memory device

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB0205033A Expired - Fee Related GB2369910B (en) 1997-12-04 1998-05-22 Faulty cell repairing method for a semiconductor memory device

Country Status (1)

Country Link
GB (2) GB2369909B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0447995A2 (en) * 1990-03-19 1991-09-25 Advantest Corporation Analyzing device for saving semiconductor memory failures
US5621691A (en) * 1994-08-25 1997-04-15 Samsung Electronics Co., Ltd. Column redundancy circuit and method of semiconductor memory device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2777276B2 (en) * 1990-09-20 1998-07-16 株式会社東芝 Test device for memory IC with redundant circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0447995A2 (en) * 1990-03-19 1991-09-25 Advantest Corporation Analyzing device for saving semiconductor memory failures
US5621691A (en) * 1994-08-25 1997-04-15 Samsung Electronics Co., Ltd. Column redundancy circuit and method of semiconductor memory device

Also Published As

Publication number Publication date
GB0205033D0 (en) 2002-04-17
GB2369910A (en) 2002-06-12
GB0205031D0 (en) 2002-04-17
GB2369910B (en) 2002-08-28
GB2369909A (en) 2002-06-12

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20090522