DE68915699D1 - Halbleiterlaservorrichtung. - Google Patents

Halbleiterlaservorrichtung.

Info

Publication number: DE68915699D1
Authority: DE; Germany
Prior art keywords: semiconductor laser; laser device; semiconductor; laser
Prior art date: 1988-11-08
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE68915699T

Other languages

English (en)

Other versions

DE68915699T2 (de

Inventor

Haruhisa Takiguchi H Takiguchi

Hiroaki Kudo

Chitose Sakane

Satoshi Sugahara

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sharp Corp

Original Assignee

Sharp Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1988-11-08

Filing date

1989-11-06

Publication date

1994-07-07

1989-11-06 Application filed by Sharp Corp filed Critical Sharp Corp

1994-07-07 Publication of DE68915699D1 publication Critical patent/DE68915699D1/de

1995-01-12 Application granted granted Critical

1995-01-12 Publication of DE68915699T2 publication Critical patent/DE68915699T2/de

2009-11-07 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32333—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm based on InGaAsP

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Semiconductor Lasers (AREA)

DE68915699T 1988-11-08 1989-11-06 Halbleiterlaservorrichtung. Expired - Fee Related DE68915699T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP63282999A JP2703784B2 (ja)	1988-11-08	1988-11-08	半導体レーザ素子

Publications (2)

Publication Number	Publication Date
DE68915699D1 true DE68915699D1 (de)	1994-07-07
DE68915699T2 DE68915699T2 (de)	1995-01-12

Family

ID=17659905

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE68915699T Expired - Fee Related DE68915699T2 (de)	1988-11-08	1989-11-06	Halbleiterlaservorrichtung.

Country Status (4)

Country	Link
US (1)	US5007107A (de)
EP (1)	EP0368578B1 (de)
JP (1)	JP2703784B2 (de)
DE (1)	DE68915699T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH03256386A (ja) *	1990-03-06	1991-11-15	Hitachi Ltd	半導体レーザ、その製造方法及び光通信システム
BE1007251A3 (nl) *	1993-06-28	1995-05-02	Philips Electronics Nv	Straling-emitterende halfgeleiderdiode en werkwijze ter vervaardiging daarvan.
JPH07154024A (ja) *	1993-11-30	1995-06-16	Fuji Photo Film Co Ltd	半導体レーザー
GB2344457B (en)	1998-12-02	2000-12-27	Arima Optoelectronics Corp	Semiconductor devices
GB2344456B (en) *	1998-12-02	2000-12-27	Arima Optoelectronics Corp	Semiconductor devices
US6900916B2 (en) *	1999-03-04	2005-05-31	Fuji Photo Film Co., Ltd.	Color laser display apparatus having fluorescent screen scanned with modulated ultraviolet laser light
CA2460297C (en) *	2004-02-26	2016-01-12	Industrial Rubber Products, Inc.	Rubber polyurethane liner
KR101916227B1 (ko)	2010-08-11	2018-11-07	지-폼, 엘엘씨	가요성 완충작용 패드, 그러한 패드를 포함하는 상품, 및 제조 및 사용 방법
JP2012138833A (ja)	2010-12-27	2012-07-19	Toshiba Corp	リモコン装置及びリモコン装置の制御方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4178604A (en) *	1973-10-05	1979-12-11	Hitachi, Ltd.	Semiconductor laser device
JPS61100991A (ja) *	1984-10-22	1986-05-19	Sharp Corp	半導体レ−ザ素子
JPS62144379A (ja) *	1985-12-18	1987-06-27	Sharp Corp	半導体レ−ザ素子
JPH0821750B2 (ja) *	1986-02-07	1996-03-04	株式会社日立製作所	半導体レ−ザ
JPS6318686A (ja) *	1986-07-10	1988-01-26	Sharp Corp	半導体レ−ザ素子
JPS63147390A (ja) *	1986-12-10	1988-06-20	Nec Corp	半導体レ−ザ素子

1988
- 1988-11-08 JP JP63282999A patent/JP2703784B2/ja not_active Expired - Fee Related
1989
- 1989-11-06 DE DE68915699T patent/DE68915699T2/de not_active Expired - Fee Related
- 1989-11-06 US US07/432,063 patent/US5007107A/en not_active Expired - Lifetime
- 1989-11-06 EP EP89311438A patent/EP0368578B1/de not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0368578B1 (de)	1994-06-01
EP0368578A2 (de)	1990-05-16
JP2703784B2 (ja)	1998-01-26
JPH02128491A (ja)	1990-05-16
EP0368578A3 (en)	1990-11-28
US5007107A (en)	1991-04-09
DE68915699T2 (de)	1995-01-12

Legal Events

Date	Code	Title	Description
1995-06-29	8364	No opposition during term of opposition
2004-09-23	8339	Ceased/non-payment of the annual fee

Publication	Publication Date	Title
DE68915673D1 (de)	1994-07-07	Halbleiterlaser-Vorrichtung.
DE68918884D1 (de)	1994-11-24	Halbleiterlaser-Vorrichtung.
DE3787769D1 (de)	1993-11-18	Halbleiterlaservorrichtung.
DE3687329D1 (de)	1993-02-04	Halbleiterlaser-vorrichtung.
DE68917848D1 (de)	1994-10-06	Halbleiteranordnung.
DE3750995D1 (de)	1995-03-02	Halbleiterlaservorrichtung.
DE3786339D1 (de)	1993-07-29	Halbleiterlaservorrichtung.
DE68908646D1 (de)	1993-09-30	Halbleiterlaser.
DE3685466D1 (de)	1992-07-02	Halbleiterlaser-vorrichtung.
DE68921421D1 (de)	1995-04-06	Halbleitervorrichtung.
DE69009448D1 (de)	1994-07-07	Halbleiterlaseranordnung.
DE68912512D1 (de)	1994-03-03	Halbleiterlaser-Vorrichtung.
NL194185B (nl)	2001-04-02	Halfgeleiderlaserinrichting.
DE68912852D1 (de)	1994-03-17	Halbleiterlaser.
DE68910492D1 (de)	1993-12-09	Halbleiterlaservorrichtung.
DE3680223D1 (de)	1991-08-22	Halbleiterlaser-vorrichtung.
DE3789832D1 (de)	1994-06-23	Halbleiterlaser-Vorrichtung.
DE69018732D1 (de)	1995-05-24	Halbleiterlaser.
DE3688943D1 (de)	1993-10-07	Halbleiterlaservorrichtung.
DE3776186D1 (de)	1992-03-05	Halbleiterlaser-vorrichtung.
DE3650379D1 (de)	1995-10-05	Halbleiterlaservorrichtung.
DE69009266D1 (de)	1994-07-07	Halbleiterlaser-Vorrichtung.
DE69005132D1 (de)	1994-01-27	Halbleiterlaser.
DE3688017D1 (de)	1993-04-22	Halbleiterlaser-vorrichtung.
DE69021151D1 (de)	1995-08-31	Halbleiterlaser-Vorrichtung.