DE60239062D1 - Verfahren für durch einen fokussierten Elektronenstrahl induziertes Ätzen - Google Patents

Verfahren für durch einen fokussierten Elektronenstrahl induziertes Ätzen

Info

Publication number
DE60239062D1
DE60239062D1 DE60239062T DE60239062T DE60239062D1 DE 60239062 D1 DE60239062 D1 DE 60239062D1 DE 60239062 T DE60239062 T DE 60239062T DE 60239062 T DE60239062 T DE 60239062T DE 60239062 D1 DE60239062 D1 DE 60239062D1
Authority
DE
Germany
Prior art keywords
electron beam
focused electron
beam induced
reaction product
induced etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60239062T
Other languages
English (en)
Inventor
Hans Wilfried Peter Dr Koops
Klaus Dr Edinger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMS GmbH
Original Assignee
Carl Zeiss SMS GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMS GmbH filed Critical Carl Zeiss SMS GmbH
Application granted granted Critical
Publication of DE60239062D1 publication Critical patent/DE60239062D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30Electron or ion beam tubes for processing objects
    • H01J2237/317Processing objects on a microscale
    • H01J2237/3174Etching microareas
    • H01J2237/31742Etching microareas for repairing masks
    • H01J2237/31744Etching microareas for repairing masks introducing gas in vicinity of workpiece
DE60239062T 2002-10-16 2002-10-16 Verfahren für durch einen fokussierten Elektronenstrahl induziertes Ätzen Expired - Lifetime DE60239062D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02023217A EP1411538B1 (de) 2002-10-16 2002-10-16 Verfahren für durch einen fokussierten Elektronenstrahl induziertes Ätzen

Publications (1)

Publication Number Publication Date
DE60239062D1 true DE60239062D1 (de) 2011-03-10

Family

ID=32039139

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60239062T Expired - Lifetime DE60239062D1 (de) 2002-10-16 2002-10-16 Verfahren für durch einen fokussierten Elektronenstrahl induziertes Ätzen

Country Status (7)

Country Link
US (1) US7452477B2 (de)
EP (1) EP1411538B1 (de)
JP (1) JP2004140346A (de)
AT (1) ATE497250T1 (de)
DE (1) DE60239062D1 (de)
IL (1) IL157999A (de)
TW (1) TWI334155B (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1363164B1 (de) 2002-05-16 2015-04-29 NaWoTec GmbH Verfahren zum Ätzen einer Oberfläche mittels durch fokussierten Elektronenstrahl hervorgerufenen chemischen Reaktionen auf dieser Oberfläche
DE10302794A1 (de) * 2003-01-24 2004-07-29 Nawotec Gmbh Verfahren und Vorrichtung zur Herstellung von Korpuskularstrahlsystemen
DE10353591A1 (de) * 2003-11-17 2005-06-02 Infineon Technologies Ag Verfahren zum lokal begrenzten Ätzen einer Chromschicht
DE10354112B4 (de) * 2003-11-19 2008-07-31 Qimonda Ag Verfahren und Anordnung zur Reparatur von Speicherchips mittels Mikro-Lithographie-Verfahren
US7674389B2 (en) * 2004-10-26 2010-03-09 The Regents Of The University Of California Precision shape modification of nanodevices with a low-energy electron beam
WO2007051312A1 (en) * 2005-11-07 2007-05-10 Fibics Incorporated Apparatus and method for surface modification using charged particle beams
US20070278180A1 (en) * 2006-06-01 2007-12-06 Williamson Mark J Electron induced chemical etching for materials characterization
US7807062B2 (en) 2006-07-10 2010-10-05 Micron Technology, Inc. Electron induced chemical etching and deposition for local circuit repair
US7791055B2 (en) 2006-07-10 2010-09-07 Micron Technology, Inc. Electron induced chemical etching/deposition for enhanced detection of surface defects
US7892978B2 (en) 2006-07-10 2011-02-22 Micron Technology, Inc. Electron induced chemical etching for device level diagnosis
US7833427B2 (en) 2006-08-14 2010-11-16 Micron Technology, Inc. Electron beam etching device and method
US7791071B2 (en) 2006-08-14 2010-09-07 Micron Technology, Inc. Profiling solid state samples
US7718080B2 (en) 2006-08-14 2010-05-18 Micron Technology, Inc. Electronic beam processing device and method using carbon nanotube emitter
US7569484B2 (en) * 2006-08-14 2009-08-04 Micron Technology, Inc. Plasma and electron beam etching device and method
DE102007054073A1 (de) 2007-11-13 2009-05-14 Carl Zeiss Nts Gmbh System und Verfahren zum Bearbeiten eines Objekts
US8541066B2 (en) * 2007-11-26 2013-09-24 University Of North Carolina At Charlotte Light-induced directed self-assembly of periodic sub-wavelength nanostructures
TWI479570B (zh) * 2007-12-26 2015-04-01 Nawotec Gmbh 從樣本移除材料之方法及系統
DE102008009640A1 (de) 2008-02-18 2009-08-27 Carl Zeiss Nts Gmbh Prozessierungssystem
WO2009114230A2 (en) * 2008-03-07 2009-09-17 Carl Zeiss Smt, Inc. Reducing particle implantation
US20100068408A1 (en) * 2008-09-16 2010-03-18 Omniprobe, Inc. Methods for electron-beam induced deposition of material inside energetic-beam microscopes
KR101610260B1 (ko) * 2008-12-15 2016-04-08 삼성전자주식회사 전자빔 어닐링 장치 및 이를 이용한 어닐링 방법
WO2011016208A1 (ja) * 2009-08-07 2011-02-10 株式会社日立ハイテクノロジーズ 走査型電子顕微鏡及び試料観察方法
WO2011060444A2 (en) * 2009-11-16 2011-05-19 Fei Company Gas delivery for beam processing systems
US9721754B2 (en) * 2011-04-26 2017-08-01 Carl Zeiss Smt Gmbh Method and apparatus for processing a substrate with a focused particle beam
US9587632B2 (en) 2012-03-30 2017-03-07 General Electric Company Thermally-controlled component and thermal control process
US9169567B2 (en) 2012-03-30 2015-10-27 General Electric Company Components having tab members
US9671030B2 (en) 2012-03-30 2017-06-06 General Electric Company Metallic seal assembly, turbine component, and method of regulating airflow in turbo-machinery
JP6126425B2 (ja) 2013-03-27 2017-05-10 株式会社日立ハイテクサイエンス 集束イオンビーム装置及びその制御方法
US9123506B2 (en) * 2013-06-10 2015-09-01 Fei Company Electron beam-induced etching

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3968476A (en) * 1974-07-17 1976-07-06 Sperry Rand Corporation Spurious signal removal in optical processor fingerprint identification apparatus
US4650778A (en) * 1985-01-18 1987-03-17 E. I. Du Pont De Nemours And Company Metal halide vaporization into diluents
JP2650930B2 (ja) * 1987-11-24 1997-09-10 株式会社日立製作所 超格子構作の素子製作方法
JPH0262039A (ja) * 1988-08-29 1990-03-01 Hitachi Ltd 多層素子の微細加工方法およびその装置
US5151135A (en) * 1989-09-15 1992-09-29 Amoco Corporation Method for cleaning surfaces using UV lasers
US6067062A (en) * 1990-09-05 2000-05-23 Seiko Instruments Inc. Light valve device
US5683547A (en) * 1990-11-21 1997-11-04 Hitachi, Ltd. Processing method and apparatus using focused energy beam
JP3235144B2 (ja) * 1991-08-02 2001-12-04 ソニー株式会社 量子箱列の作製方法
JP3331563B2 (ja) * 1992-08-28 2002-10-07 石川島播磨重工業株式会社 電子ビーム加熱装置
JP2671089B2 (ja) * 1992-11-20 1997-10-29 光技術研究開発株式会社 量子構造作製方法
US5472749A (en) * 1994-10-27 1995-12-05 Northwestern University Graphite encapsulated nanophase particles produced by a tungsten arc method
JP3464320B2 (ja) * 1995-08-02 2003-11-10 株式会社荏原製作所 高速原子線を用いた加工方法及び加工装置
US5665658A (en) * 1996-03-21 1997-09-09 Motorola Method of forming a dielectric layer structure
AU719341B2 (en) * 1997-01-22 2000-05-04 De Nora Elettrodi S.P.A. Method of forming robust metal, metal oxide, and metal alloy layers on ion-conductive polymer membranes
US6673127B1 (en) * 1997-01-22 2004-01-06 Denora S.P.A. Method of forming robust metal, metal oxide, and metal alloy layers on ion-conductive polymer membranes
JPH10223512A (ja) * 1997-02-10 1998-08-21 Nikon Corp 電子ビーム投影露光装置
US6261938B1 (en) * 1997-02-12 2001-07-17 Quantiscript, Inc. Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography
US6783643B2 (en) * 1999-06-22 2004-08-31 President And Fellows Of Harvard College Control of solid state dimensional features
US6387530B1 (en) * 1999-08-27 2002-05-14 Seagate Technology Llc Patterned magnetic media via thermally induced phase transition
JP2001242300A (ja) * 2000-03-02 2001-09-07 Sony Corp 電子ビーム照射装置
US6751516B1 (en) * 2000-08-10 2004-06-15 Richardson Technologies, Inc. Method and system for direct writing, editing and transmitting a three dimensional part and imaging systems therefor
DE10042098A1 (de) * 2000-08-26 2002-03-14 Deutsche Telekom Ag Gasversorgung für Additive Lithographie
JP2002252212A (ja) * 2001-02-23 2002-09-06 Mitsubishi Heavy Ind Ltd 表面加工方法、光起電力発生装置の製造方法及び製造装置
US20030000921A1 (en) * 2001-06-29 2003-01-02 Ted Liang Mask repair with electron beam-induced chemical etching
EP1363164B1 (de) 2002-05-16 2015-04-29 NaWoTec GmbH Verfahren zum Ätzen einer Oberfläche mittels durch fokussierten Elektronenstrahl hervorgerufenen chemischen Reaktionen auf dieser Oberfläche
US6943350B2 (en) * 2002-08-27 2005-09-13 Kla-Tencor Technologies Corporation Methods and apparatus for electron beam inspection of samples
US6677586B1 (en) * 2002-08-27 2004-01-13 Kla -Tencor Technologies Corporation Methods and apparatus for electron beam inspection of samples
US6843927B2 (en) * 2002-08-27 2005-01-18 Kla-Tencor Technologies Corporation Method and apparatus for endpoint detection in electron beam assisted etching
US6787783B2 (en) * 2002-12-17 2004-09-07 International Business Machines Corporation Apparatus and techniques for scanning electron beam based chip repair
DE10302794A1 (de) 2003-01-24 2004-07-29 Nawotec Gmbh Verfahren und Vorrichtung zur Herstellung von Korpuskularstrahlsystemen

Also Published As

Publication number Publication date
ATE497250T1 (de) 2011-02-15
IL157999A (en) 2013-06-27
TWI334155B (en) 2010-12-01
US7452477B2 (en) 2008-11-18
US20050072753A1 (en) 2005-04-07
EP1411538B1 (de) 2011-01-26
EP1411538A1 (de) 2004-04-21
JP2004140346A (ja) 2004-05-13
TW200406803A (en) 2004-05-01
IL157999A0 (en) 2004-03-28

Similar Documents

Publication Publication Date Title
ATE497250T1 (de) Verfahren für durch einen fokussierten elektronenstrahl induziertes ätzen
US7238294B2 (en) Procedure for etching of materials at the surface with focussed electron beam induced chemical reactions at said surface
DE502005001749D1 (de) Bedampfervorrichtung
WO2008021363A3 (en) Electron beam processing method using carbon nanotube emitter
Basta et al. Substrate surface effects on electron-irradiated graphene
Sidorov et al. Sputtering of carbon using hydrogen ion beams with energies of 60–800 eV
US20150114821A1 (en) Method for Modifying Properties of Graphene
JPH05190517A (ja) 微細パターン形成方法
JP2006294571A (ja) 大気圧プラズマ処理装置及び大気圧プラズマ処理方法
KR930020593A (ko) 고체 표면 가공방법
JP2020017661A (ja) 酸化膜除去方法、および、酸化膜除去装置
Callegari et al. Surface chemistry and optimization of focused ion beam iodine-enhanced etching of indium phosphide
KR20150006417A (ko) 그래핀의 가공 방법, 그래핀 나노리본의 제조 방법 및 그래핀 나노리본
Schindler et al. Focused electron beam based direct-write fabrication of graphene and amorphous carbon from oxo-functionalized graphene on silicon dioxide
JP2006216585A (ja) プラズマ加工装置
RU2306257C1 (ru) Способ формирования нано(микро)систем из углеродных нанотрубок
JPH06291095A (ja) パターン形成方法
JP3207675U (ja) 基材の表面上を親水性とする作成装置
Lasseter et al. Selected Area Manipulation of MoS2 via Focused Electron Beam-Induced Etching for Nanoscale Device Editing
JPH02188918A (ja) 化合物半導体の加工方法
Iwasaki et al. Electron-beam-induced decomposition of SiO 2 overlay on Si in STM nanolithography
JPS614224A (ja) 図形状膜形成装置
JP2017103393A (ja) 炭素膜処理装置
KR20130118425A (ko) 상압 플라즈마 에칭 처리 시스템
Markwitz et al. Plasma immersion nitrogen implantation into silicon and rapid thermal electron beam annealing for surface structuring