DE60132587D1 - Hochfrequenzverstärkerungsmittel - Google Patents

Hochfrequenzverstärkerungsmittel

Info

Publication number
DE60132587D1
DE60132587D1 DE60132587T DE60132587T DE60132587D1 DE 60132587 D1 DE60132587 D1 DE 60132587D1 DE 60132587 T DE60132587 T DE 60132587T DE 60132587 T DE60132587 T DE 60132587T DE 60132587 D1 DE60132587 D1 DE 60132587D1
Authority
DE
Germany
Prior art keywords
high frequency
reinforcing agents
frequency reinforcing
agents
reinforcing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60132587T
Other languages
English (en)
Inventor
Shintaro Shinjo
Kazutomi Mori
Hiroyuki Joba
Hiroaki Nagano
Mitsuru Motizuki
Yukio Ikeda
Noriharu Suematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE60132587D1 publication Critical patent/DE60132587D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H03F1/0266Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A by using a signal derived from the input signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
DE60132587T 2000-06-30 2001-06-29 Hochfrequenzverstärkerungsmittel Expired - Lifetime DE60132587D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2000/004367 WO2002003543A1 (fr) 2000-06-30 2000-06-30 Amplificateur haute frequence
PCT/JP2001/005667 WO2002003546A1 (fr) 2000-06-30 2001-06-29 Amplificateur haute frequence

Publications (1)

Publication Number Publication Date
DE60132587D1 true DE60132587D1 (de) 2008-03-13

Family

ID=11736206

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60132587T Expired - Lifetime DE60132587D1 (de) 2000-06-30 2001-06-29 Hochfrequenzverstärkerungsmittel

Country Status (5)

Country Link
US (1) US6873208B2 (de)
EP (1) EP1298793B1 (de)
KR (1) KR100459057B1 (de)
DE (1) DE60132587D1 (de)
WO (2) WO2002003543A1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030112073A1 (en) * 2001-12-13 2003-06-19 Koninklijke Philips Electronics N.V. RF amplifier with current mirror bias-boosting
EP1586161B1 (de) * 2002-12-16 2007-05-02 Koninklijke Philips Electronics N.V. Selbstadaptierende vorspannungsschaltung zur ermöglichung einer dynamischen kontrolle des ruhestromes in einem linearen leistungsverstärker
EP1645040B1 (de) * 2003-07-07 2018-09-05 Analog Devices, Inc. Variables dämpfungssystem mit kontinuierlicher eingangslenkung
EP1528666A1 (de) * 2003-11-03 2005-05-04 TriQuint Semiconductor GmbH Leistungsverstärkerschaltungsanordnung und integrierte Schaltung
US7262657B2 (en) * 2005-03-21 2007-08-28 Skyworks Solutions, Inc. Bias control for reducing amplifier power consumption and maintaining linearity
US7282996B2 (en) * 2005-04-14 2007-10-16 Micron Technology, Inc. Electronic amplifier with signal gain dependent bias
JP2007174289A (ja) * 2005-12-22 2007-07-05 Fujitsu Ltd センサ用アナログ多段増幅回路
WO2008004034A1 (en) * 2006-06-30 2008-01-10 Freescale Semiconductor, Inc. Integrated amplifier bias circuit
US7471154B2 (en) 2006-08-08 2008-12-30 Skyworks Solutions, Inc. Bias circuit for maintaining high linearity at cutback power conditions
US7446612B2 (en) * 2006-09-08 2008-11-04 Skyworks Solutions, Inc. Amplifier feedback and bias configuration
CN101542897B (zh) * 2006-11-30 2011-08-17 三菱电机株式会社 高频放大器
US7696826B2 (en) * 2006-12-04 2010-04-13 Skyworks Solutions, Inc. Temperature compensation of collector-voltage control RF amplifiers
US7729674B2 (en) 2007-01-09 2010-06-01 Skyworks Solutions, Inc. Multiband or multimode receiver with shared bias circuit
JP4784558B2 (ja) * 2007-05-30 2011-10-05 ソニー株式会社 電力増幅装置およびこれを用いた無線通信装置
FR2930088B1 (fr) * 2008-04-11 2010-09-03 Thales Sa Dispositif de controle d'une chaine d'amplification en puissance, fonctionnant notamment dans le domaine des hyperfrequences
WO2012006516A2 (en) 2010-07-08 2012-01-12 Alkon Daniel L Dag-type and indirect protein kinase c activators and anticoagulant for the treatment of stroke
US8829997B1 (en) * 2012-10-23 2014-09-09 M/A-Com Technology Solutions Holdings, Inc. Monolithic integrated power regulation for power control and/or bias control
US9595923B2 (en) * 2013-03-14 2017-03-14 Peregrine Semiconductor Corporation Systems and methods for optimizing amplifier operations
US20160025704A1 (en) 2013-03-15 2016-01-28 Daniel L. Alkon Methods for identifying neuroprotective pkc activators
KR102093152B1 (ko) 2017-10-17 2020-03-25 삼성전기주식회사 엔벨로프 트래킹 전류 바이어스 회로 및 파워 증폭 장치
KR102069634B1 (ko) 2018-07-05 2020-01-23 삼성전기주식회사 선형성 보상기능을 갖는 다단 파워 증폭 장치
JP2021077939A (ja) * 2019-11-05 2021-05-20 株式会社村田製作所 電力増幅回路
US11271536B2 (en) * 2020-04-24 2022-03-08 Gm Cruise Holdings Llc Multistage variable gain amplifier for sensor application

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5680906A (en) 1979-12-05 1981-07-02 Hitachi Ltd Acoustic power amplifier
JPS58178612A (ja) 1982-04-12 1983-10-19 Nippon Columbia Co Ltd 電力増幅器のバイアス回路
JPS60116719A (ja) 1983-11-29 1985-06-24 Sumitomo Metal Ind Ltd 耐食性の優れた油井管鋼の製造方法
JPS60116719U (ja) * 1984-01-17 1985-08-07 株式会社東芝 電界効果トランジスタ増幅回路
JPH0669002B2 (ja) 1986-05-23 1994-08-31 日本電信電話株式会社 高周波増幅器
JPH02149108A (ja) * 1988-11-30 1990-06-07 Nec Corp ゲート電圧制御回路
JPH0821819B2 (ja) * 1990-08-30 1996-03-04 三洋電機株式会社 増幅回路
JPH05308232A (ja) * 1992-04-28 1993-11-19 Sharp Corp 赤外線通信装置の受光回路
US5410275A (en) * 1993-12-13 1995-04-25 Motorola Inc. Amplifier circuit suitable for use in a radiotelephone
JPH08288772A (ja) * 1995-04-14 1996-11-01 Goyo Denshi Kogyo Kk 送信電力増幅器のバイアス制御回路
JP2766230B2 (ja) * 1995-10-12 1998-06-18 埼玉日本電気株式会社 受信増幅装置
JP3479404B2 (ja) 1996-03-29 2003-12-15 アルプス電気株式会社 多段可変利得増幅回路
US5923215A (en) * 1996-06-13 1999-07-13 The Whitaker Corporation Linearized amplifier
US5757229A (en) * 1996-06-28 1998-05-26 Motorola, Inc. Bias circuit for a power amplifier
KR100444766B1 (ko) 1997-02-14 2004-11-03 서순기 생수및물저장통내의살균장치
JP3420946B2 (ja) * 1998-08-10 2003-06-30 松下電器産業株式会社 利得制御装置及び利得制御方法
US6445247B1 (en) * 2001-06-01 2002-09-03 Qualcomm Incorporated Self-controlled high efficiency power amplifier

Also Published As

Publication number Publication date
US6873208B2 (en) 2005-03-29
WO2002003546A1 (fr) 2002-01-10
EP1298793A4 (de) 2005-08-03
KR100459057B1 (ko) 2004-12-03
EP1298793B1 (de) 2008-01-23
KR20020064768A (ko) 2002-08-09
EP1298793A1 (de) 2003-04-02
WO2002003543A1 (fr) 2002-01-10
US20030048135A1 (en) 2003-03-13

Similar Documents

Publication Publication Date Title
DE60110686D1 (de) Frequenzsynthesizer
DE60132587D1 (de) Hochfrequenzverstärkerungsmittel
DE60104761D1 (de) Frequenzsynthetisierer
DE60130298D1 (de) Akustischer Resonator
IS6492A (is) Ný bíarýlkarboxamíð
DE60138135D1 (de) Nähfadenschraube
DE60013305D1 (de) Perkolationsvorrichtung
DZ3409A1 (fr) Association therapeuthique
DE60132410D1 (de) Resonator
DK1301287T3 (da) Vibrationssigte
DE60123890D1 (de) Frequenzumsetzer
DE50109453D1 (de) Resonatoranordnung
DE60107598D1 (de) Smart-skin strukturen
DE50000757D1 (de) Frequenzsynthesizer
FI20000510A0 (fi) Taajuusmuuttaja
ATE262530T1 (de) Indolochinazolinone
DE60140181D1 (de) Hochfrequenzrelais
FI990462A (fi) Resonaattorisuodatin
ITVI20000162A0 (it) Benna vagliatrice - miscelatrice
NO20025308D0 (no) FremgangsmÕte for forsterkning av strukturer
DE60129772D1 (de) Hochleistungsfrankiermaschine
NO20023998L (no) Aminosulfonylbifenylderivater
DE60112167D1 (de) Vibrator
DE60123812D1 (de) Tensidsystem
AR027931A1 (es) Antitranspirantes

Legal Events

Date Code Title Description
8332 No legal effect for de