DE60042110D1 - Kunststoffeingekapselte Leistungshalbleiteranordnung einschliesslich einem Substrat mit allen darauf montierten elektronischen Bauteilen für eine Kontrollschaltung - Google Patents
Kunststoffeingekapselte Leistungshalbleiteranordnung einschliesslich einem Substrat mit allen darauf montierten elektronischen Bauteilen für eine KontrollschaltungInfo
- Publication number
- DE60042110D1 DE60042110D1 DE60042110T DE60042110T DE60042110D1 DE 60042110 D1 DE60042110 D1 DE 60042110D1 DE 60042110 T DE60042110 T DE 60042110T DE 60042110 T DE60042110 T DE 60042110T DE 60042110 D1 DE60042110 D1 DE 60042110D1
- Authority
- DE
- Germany
- Prior art keywords
- power semiconductor
- control circuit
- semiconductor device
- substrate
- electronic components
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19102—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
- H01L2924/19104—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device on the semiconductor or solid-state device, i.e. passive-on-chip
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000062220A JP4037589B2 (ja) | 2000-03-07 | 2000-03-07 | 樹脂封止形電力用半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60042110D1 true DE60042110D1 (de) | 2009-06-10 |
Family
ID=18582258
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60042110T Expired - Lifetime DE60042110D1 (de) | 2000-03-07 | 2000-10-20 | Kunststoffeingekapselte Leistungshalbleiteranordnung einschliesslich einem Substrat mit allen darauf montierten elektronischen Bauteilen für eine Kontrollschaltung |
Country Status (4)
Country | Link |
---|---|
US (1) | US6313520B1 (de) |
EP (1) | EP1143514B1 (de) |
JP (1) | JP4037589B2 (de) |
DE (1) | DE60042110D1 (de) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1156528B1 (de) * | 2000-05-08 | 2006-08-30 | STMicroelectronics S.r.l. | Elektrische Verbindungsstruktur für elektronische Leistungsbauelemente und Verbindungsmethode |
US6856006B2 (en) * | 2002-03-28 | 2005-02-15 | Siliconix Taiwan Ltd | Encapsulation method and leadframe for leadless semiconductor packages |
KR100370231B1 (ko) * | 2000-06-13 | 2003-01-29 | 페어차일드코리아반도체 주식회사 | 리드프레임의 배면에 직접 부착되는 절연방열판을구비하는 전력 모듈 패키지 |
US6545364B2 (en) * | 2000-09-04 | 2003-04-08 | Sanyo Electric Co., Ltd. | Circuit device and method of manufacturing the same |
US6798044B2 (en) * | 2000-12-04 | 2004-09-28 | Fairchild Semiconductor Corporation | Flip chip in leaded molded package with two dies |
US6486535B2 (en) * | 2001-03-20 | 2002-11-26 | Advanced Semiconductor Engineering, Inc. | Electronic package with surface-mountable device built therein |
JP2002314030A (ja) * | 2001-04-12 | 2002-10-25 | Mitsubishi Electric Corp | 半導体装置 |
JP2002353404A (ja) * | 2001-05-22 | 2002-12-06 | Taiheiyo Seiko Kk | インテリジェントパワースイッチ装置 |
KR100723454B1 (ko) * | 2004-08-21 | 2007-05-30 | 페어차일드코리아반도체 주식회사 | 높은 열 방출 능력을 구비한 전력용 모듈 패키지 및 그제조방법 |
US7061080B2 (en) * | 2001-06-11 | 2006-06-13 | Fairchild Korea Semiconductor Ltd. | Power module package having improved heat dissipating capability |
EP3192741A1 (de) | 2001-07-25 | 2017-07-19 | Max Co., Ltd. | Maschine zum binden von verstärkungsstahlstäben |
KR100442847B1 (ko) * | 2001-09-17 | 2004-08-02 | 페어차일드코리아반도체 주식회사 | 3차원 구조를 갖는 전력 반도체 모듈 및 그 제조방법 |
JP3920629B2 (ja) * | 2001-11-15 | 2007-05-30 | 三洋電機株式会社 | 半導体装置 |
US7145223B2 (en) * | 2002-05-22 | 2006-12-05 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device |
JP3847691B2 (ja) | 2002-09-26 | 2006-11-22 | 三菱電機株式会社 | 電力用半導体装置 |
JP3916072B2 (ja) * | 2003-02-04 | 2007-05-16 | 住友電気工業株式会社 | 交流結合回路 |
DE102004032371A1 (de) * | 2004-06-30 | 2006-01-26 | Robert Bosch Gmbh | Elektronische Schaltungseinheit |
TW200642550A (en) * | 2005-05-25 | 2006-12-01 | Cyntec Co Ltd | Power module package structure |
US9093359B2 (en) * | 2005-07-01 | 2015-07-28 | Vishay-Siliconix | Complete power management system implemented in a single surface mount package |
KR20080031446A (ko) * | 2005-08-31 | 2008-04-08 | 산요덴키가부시키가이샤 | 회로 장치 및 그 제조 방법 |
CN101253626B (zh) * | 2005-08-31 | 2010-09-29 | 三洋电机株式会社 | 电路装置及其制造方法 |
DE102005061016B4 (de) | 2005-12-19 | 2018-12-06 | Infineon Technologies Ag | Leistungshalbleitermodul, Verfahren zu seiner Herstellung und Verwendung in einem Schaltnetzteil |
US8471374B2 (en) * | 2006-02-21 | 2013-06-25 | Stats Chippac Ltd. | Integrated circuit package system with L-shaped leadfingers |
JP4858290B2 (ja) * | 2006-06-05 | 2012-01-18 | 株式会社デンソー | 負荷駆動装置 |
DE102006033175A1 (de) * | 2006-07-18 | 2008-01-24 | Robert Bosch Gmbh | Elektronikanordnung |
US7659608B2 (en) * | 2006-09-15 | 2010-02-09 | Stats Chippac Ltd. | Stacked die semiconductor device having circuit tape |
US8294248B2 (en) * | 2006-11-30 | 2012-10-23 | Marvell World Trade Ltd. | Chip on leads |
US7642638B2 (en) * | 2006-12-22 | 2010-01-05 | United Test And Assembly Center Ltd. | Inverted lead frame in substrate |
KR101221807B1 (ko) * | 2006-12-29 | 2013-01-14 | 페어차일드코리아반도체 주식회사 | 전력 소자 패키지 |
US20090051019A1 (en) * | 2007-08-20 | 2009-02-26 | Chih-Feng Huang | Multi-chip module package |
US20100193920A1 (en) * | 2009-01-30 | 2010-08-05 | Infineon Technologies Ag | Semiconductor device, leadframe and method of encapsulating |
US8547709B2 (en) * | 2010-02-12 | 2013-10-01 | Cyntec Co. Ltd. | Electronic system with a composite substrate |
WO2011155165A1 (ja) * | 2010-06-11 | 2011-12-15 | パナソニック株式会社 | 樹脂封止型半導体装置及びその製造方法 |
US9287765B2 (en) | 2010-07-15 | 2016-03-15 | Delta Electronics, Inc. | Power system, power module therein and method for fabricating power module |
CN102340233B (zh) * | 2010-07-15 | 2014-05-07 | 台达电子工业股份有限公司 | 功率模块 |
CN102339818B (zh) * | 2010-07-15 | 2014-04-30 | 台达电子工业股份有限公司 | 功率模块及其制造方法 |
JP2012151163A (ja) * | 2011-01-17 | 2012-08-09 | Sanken Electric Co Ltd | 半導体モジュール |
JP5824672B2 (ja) * | 2011-02-24 | 2015-11-25 | パナソニックIpマネジメント株式会社 | パワーモジュール |
KR101231792B1 (ko) * | 2011-03-17 | 2013-02-08 | 엘에스파워세미텍 주식회사 | 반도체 패키지 |
US8692377B2 (en) | 2011-03-23 | 2014-04-08 | Stats Chippac Ltd. | Integrated circuit packaging system with plated leads and method of manufacture thereof |
JP5518000B2 (ja) * | 2011-06-10 | 2014-06-11 | 三菱電機株式会社 | パワーモジュールとその製造方法 |
KR200483254Y1 (ko) | 2012-01-06 | 2017-05-02 | 페어차일드코리아반도체 주식회사 | 반도체 패키지 |
JP5758816B2 (ja) * | 2012-02-08 | 2015-08-05 | 三菱電機株式会社 | パワー半導体装置 |
EP2680305A3 (de) * | 2012-06-29 | 2014-02-26 | Samsung Electro-Mechanics Co., Ltd | Halbleitergehäuse |
US20150075849A1 (en) * | 2013-09-17 | 2015-03-19 | Jia Lin Yap | Semiconductor device and lead frame with interposer |
JP6256145B2 (ja) | 2014-03-26 | 2018-01-10 | 株式会社デンソー | 半導体装置及びその製造方法 |
DE102015104995B4 (de) * | 2015-03-31 | 2020-06-04 | Infineon Technologies Austria Ag | Verbindungshalbleitervorrichtung mit einem mehrstufigen Träger |
CN108269778A (zh) * | 2018-01-09 | 2018-07-10 | 深圳电通纬创微电子股份有限公司 | 一种双基岛sop芯片封装结构 |
CN110556370B (zh) * | 2019-09-30 | 2024-03-29 | 桂林航天电子有限公司 | 微组装固体功率器件 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60160154A (ja) * | 1984-01-30 | 1985-08-21 | Nec Kansai Ltd | Hic |
JPS6114731A (ja) * | 1984-06-29 | 1986-01-22 | Nec Kansai Ltd | 半導体装置 |
KR910001419B1 (ko) * | 1987-03-31 | 1991-03-05 | 가부시키가이샤 도시바 | 수지봉합형 집적회로장치 |
JPH01194447A (ja) * | 1988-01-29 | 1989-08-04 | Ibiden Co Ltd | 混成集積回路装置 |
JPH027455A (ja) * | 1988-06-24 | 1990-01-11 | Nec Corp | 樹脂封止型混成集積回路 |
JPH0342846A (ja) * | 1989-07-10 | 1991-02-25 | Toshiba Corp | ハイブリッド型樹脂封止半導体装置 |
US5291054A (en) * | 1991-06-24 | 1994-03-01 | Sanyo Electric Co., Ltd. | Light receiving module for converting light signal to electric signal |
JPH05218233A (ja) * | 1992-02-06 | 1993-08-27 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JPH05226575A (ja) * | 1992-02-13 | 1993-09-03 | Mitsubishi Electric Corp | 半導体装置 |
JP2708320B2 (ja) * | 1992-04-17 | 1998-02-04 | 三菱電機株式会社 | マルチチップ型半導体装置及びその製造方法 |
JP3193788B2 (ja) * | 1992-10-06 | 2001-07-30 | イビデン株式会社 | 電子部品搭載用基板 |
JP3183064B2 (ja) * | 1994-10-31 | 2001-07-03 | 富士電機株式会社 | 半導体装置 |
JP3299421B2 (ja) * | 1995-10-03 | 2002-07-08 | 三菱電機株式会社 | 電力用半導体装置の製造方法およびリードフレーム |
JP3429921B2 (ja) * | 1995-10-26 | 2003-07-28 | 三菱電機株式会社 | 半導体装置 |
JP3516789B2 (ja) * | 1995-11-15 | 2004-04-05 | 三菱電機株式会社 | 半導体パワーモジュール |
JP3201277B2 (ja) * | 1996-09-11 | 2001-08-20 | 株式会社日立製作所 | 半導体装置 |
DE69637698D1 (de) * | 1996-11-28 | 2008-11-13 | Mitsubishi Electric Corp | Halbleitervorrichtung |
EP0910121B1 (de) * | 1996-11-28 | 2009-01-07 | Mitsubishi Denki Kabushiki Kaisha | Halbleiteranordnung |
US6184585B1 (en) * | 1997-11-13 | 2001-02-06 | International Rectifier Corp. | Co-packaged MOS-gated device and control integrated circuit |
JPH11233712A (ja) * | 1998-02-12 | 1999-08-27 | Hitachi Ltd | 半導体装置及びその製法とそれを使った電気機器 |
-
2000
- 2000-03-07 JP JP2000062220A patent/JP4037589B2/ja not_active Expired - Lifetime
- 2000-09-18 US US09/664,341 patent/US6313520B1/en not_active Expired - Lifetime
- 2000-10-20 EP EP00122884A patent/EP1143514B1/de not_active Expired - Lifetime
- 2000-10-20 DE DE60042110T patent/DE60042110D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1143514A3 (de) | 2004-03-31 |
JP2001250911A (ja) | 2001-09-14 |
JP4037589B2 (ja) | 2008-01-23 |
EP1143514A2 (de) | 2001-10-10 |
US6313520B1 (en) | 2001-11-06 |
EP1143514B1 (de) | 2009-04-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60042110D1 (de) | Kunststoffeingekapselte Leistungshalbleiteranordnung einschliesslich einem Substrat mit allen darauf montierten elektronischen Bauteilen für eine Kontrollschaltung | |
US7445957B2 (en) | Method for fabricating wafer level semiconductor package with build-up layer | |
KR101075169B1 (ko) | 파워 모듈 플립 칩 패키지 | |
JP2004111965A (ja) | 接着テープがボンディングワイヤに貼付けられた半導体チップパッケージ | |
KR960001604B1 (en) | Semiconductor device with an encapsulation package | |
US6249433B1 (en) | Heat-dissipating device for integrated circuit package | |
US5888849A (en) | Method for fabricating an electronic package | |
JP2770947B2 (ja) | 樹脂封止型半導体装置及びその製造方法 | |
JP3628058B2 (ja) | 樹脂封止型半導体装置 | |
JPS6431443A (en) | Semiconductor device | |
KR100221562B1 (ko) | 볼 그리드 어레이 반도체 패키지의 구조 및 그 제조 방법 | |
KR100233861B1 (ko) | Bga 반도체 패키지 | |
KR200276091Y1 (ko) | 가요성 회로기판을 이용한 볼 그리드 어레이 반도체 패키지 제조용 몰딩 금형 | |
JPH03160751A (ja) | 半導体装置 | |
KR950006441Y1 (ko) | 고 발열용 반도체 패키지 | |
JP4573472B2 (ja) | 混成集積回路装置 | |
JPH1084055A (ja) | 半導体装置及びその製造方法 | |
KR100727728B1 (ko) | 반도체 패키지 | |
TW533518B (en) | Substrate for carrying chip and semiconductor package having the same | |
KR0161621B1 (ko) | 칩이 실장되는 공간이 형성된 기판을 적용한 칩 스케일 패키지 | |
JPH02146751A (ja) | 半導体装置 | |
KR20030045224A (ko) | 와이어 본딩 방식의 칩 스케일 패키지 및 그 제조방법 | |
KR200167587Y1 (ko) | 반도체 패캐이지 | |
JPH08306824A (ja) | 樹脂封止型半導体装置 | |
KR100244089B1 (ko) | 볼 그리드 어레이 반도체 패키지의 제조방법 및 그 구조 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
R084 | Declaration of willingness to licence |
Ref document number: 1143514 Country of ref document: EP Effective date: 20110704 |