DE3886329D1 - Halbleiteranordnung mit Luftbrücken-Verbindungen. - Google Patents

Halbleiteranordnung mit Luftbrücken-Verbindungen.

Info

Publication number
DE3886329D1
DE3886329D1 DE88114947T DE3886329T DE3886329D1 DE 3886329 D1 DE3886329 D1 DE 3886329D1 DE 88114947 T DE88114947 T DE 88114947T DE 3886329 T DE3886329 T DE 3886329T DE 3886329 D1 DE3886329 D1 DE 3886329D1
Authority
DE
Germany
Prior art keywords
airlift
connections
semiconductor device
semiconductor
airlift connections
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88114947T
Other languages
English (en)
Other versions
DE3886329T2 (de
Inventor
Yasumi C O Nec Corpo Kurashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3886329D1 publication Critical patent/DE3886329D1/de
Publication of DE3886329T2 publication Critical patent/DE3886329T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5221Crossover interconnections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE3886329T 1987-09-24 1988-09-13 Halbleiteranordnung mit Luftbrücken-Verbindungen. Expired - Fee Related DE3886329T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62240017A JPS6481343A (en) 1987-09-24 1987-09-24 Manufacture of integrated circuit

Publications (2)

Publication Number Publication Date
DE3886329D1 true DE3886329D1 (de) 1994-01-27
DE3886329T2 DE3886329T2 (de) 1994-06-30

Family

ID=17053224

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3886329T Expired - Fee Related DE3886329T2 (de) 1987-09-24 1988-09-13 Halbleiteranordnung mit Luftbrücken-Verbindungen.

Country Status (4)

Country Link
US (1) US4916520A (de)
EP (1) EP0309805B1 (de)
JP (1) JPS6481343A (de)
DE (1) DE3886329T2 (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216490A (en) * 1988-01-13 1993-06-01 Charles Stark Draper Laboratory, Inc. Bridge electrodes for microelectromechanical devices
JP2856778B2 (ja) * 1989-09-07 1999-02-10 株式会社東芝 半導体装置の配線構造
FR2653595B1 (fr) * 1989-10-25 1992-02-14 Valtronic France Circuit electronique a grille d'interconnexion.
US5144184A (en) * 1990-01-26 1992-09-01 The Charles Stark Draper Laboratory, Inc. Micromechanical device with a trimmable resonant frequency structure and method of trimming same
US5126812A (en) * 1990-02-14 1992-06-30 The Charles Stark Draper Laboratory, Inc. Monolithic micromechanical accelerometer
US5473945A (en) * 1990-02-14 1995-12-12 The Charles Stark Draper Laboratory, Inc. Micromechanical angular accelerometer with auxiliary linear accelerometer
JP3031966B2 (ja) * 1990-07-02 2000-04-10 株式会社東芝 集積回路装置
US5605598A (en) * 1990-10-17 1997-02-25 The Charles Stark Draper Laboratory Inc. Monolithic micromechanical vibrating beam accelerometer with trimmable resonant frequency
US5408119A (en) * 1990-10-17 1995-04-18 The Charles Stark Draper Laboratory, Inc. Monolithic micromechanical vibrating string accelerometer with trimmable resonant frequency
JPH04268750A (ja) * 1991-02-25 1992-09-24 Toshiba Corp 半導体集積回路
US5129983A (en) * 1991-02-25 1992-07-14 The Charles Stark Draper Laboratory, Inc. Method of fabrication of large area micromechanical devices
US5203208A (en) * 1991-04-29 1993-04-20 The Charles Stark Draper Laboratory Symmetrical micromechanical gyroscope
US5331852A (en) * 1991-09-11 1994-07-26 The Charles Stark Draper Laboratory, Inc. Electromagnetic rebalanced micromechanical transducer
US5635639A (en) * 1991-09-11 1997-06-03 The Charles Stark Draper Laboratory, Inc. Micromechanical tuning fork angular rate sensor
US5408877A (en) * 1992-03-16 1995-04-25 The Charles Stark Draper Laboratory, Inc. Micromechanical gyroscopic transducer with improved drive and sense capabilities
US5767405A (en) * 1992-04-07 1998-06-16 The Charles Stark Draper Laboratory, Inc. Comb-drive micromechanical tuning fork gyroscope with piezoelectric readout
US5349855A (en) * 1992-04-07 1994-09-27 The Charles Stark Draper Laboratory, Inc. Comb drive micromechanical tuning fork gyro
US5650568A (en) * 1993-02-10 1997-07-22 The Charles Stark Draper Laboratory, Inc. Gimballed vibrating wheel gyroscope having strain relief features
JP3267049B2 (ja) * 1994-05-25 2002-03-18 株式会社村田製作所 エアブリッジ配線を有するスパイラルインダクタの製造方法
US5461003A (en) * 1994-05-27 1995-10-24 Texas Instruments Incorporated Multilevel interconnect structure with air gaps formed between metal leads
US5581035A (en) * 1994-08-29 1996-12-03 The Charles Stark Draper Laboratory, Inc. Micromechanical sensor with a guard band electrode
US5646348A (en) * 1994-08-29 1997-07-08 The Charles Stark Draper Laboratory, Inc. Micromechanical sensor with a guard band electrode and fabrication technique therefor
US5725729A (en) * 1994-09-26 1998-03-10 The Charles Stark Draper Laboratory, Inc. Process for micromechanical fabrication
JP3359780B2 (ja) * 1995-04-12 2002-12-24 三菱電機株式会社 配線装置
US5817942A (en) * 1996-02-28 1998-10-06 The Charles Stark Draper Laboratory, Inc. Capacitive in-plane accelerometer
US5892153A (en) * 1996-11-21 1999-04-06 The Charles Stark Draper Laboratory, Inc. Guard bands which control out-of-plane sensitivities in tuning fork gyroscopes and other sensors
US5911156A (en) * 1997-02-24 1999-06-08 The Charles Stark Draper Laboratory, Inc. Split electrode to minimize charge transients, motor amplitude mismatch errors, and sensitivity to vertical translation in tuning fork gyros and other devices
US5783973A (en) * 1997-02-24 1998-07-21 The Charles Stark Draper Laboratory, Inc. Temperature insensitive silicon oscillator and precision voltage reference formed therefrom
US5952574A (en) * 1997-04-29 1999-09-14 The Charles Stark Draper Laboratory, Inc. Trenches to reduce charging effects and to control out-of-plane sensitivities in tuning fork gyroscopes and other sensors
US6798064B1 (en) 2000-07-12 2004-09-28 Motorola, Inc. Electronic component and method of manufacture
TW577152B (en) * 2000-12-18 2004-02-21 Hitachi Ltd Semiconductor integrated circuit device
WO2003083492A1 (en) * 2002-03-26 2003-10-09 The Charles Stark Draper Laboratory, Inc. Microelectromechanical sensors having reduced signal bias errors and methods of manufacturing the same
US6812810B2 (en) * 2002-06-19 2004-11-02 Intel Corporation Bridges for microelectromechanical structures
US8187902B2 (en) * 2008-07-09 2012-05-29 The Charles Stark Draper Laboratory, Inc. High performance sensors and methods for forming the same
US8796904B2 (en) 2011-10-31 2014-08-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer
US9243316B2 (en) 2010-01-22 2016-01-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Method of fabricating piezoelectric material with selected c-axis orientation
US8962443B2 (en) * 2011-01-31 2015-02-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Semiconductor device having an airbridge and method of fabricating the same
US9490771B2 (en) 2012-10-29 2016-11-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar and frame
US9401692B2 (en) 2012-10-29 2016-07-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator having collar structure
US9490418B2 (en) 2011-03-29 2016-11-08 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator comprising collar and acoustic reflector with temperature compensating layer
US9385684B2 (en) 2012-10-23 2016-07-05 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator having guard ring
US10132712B1 (en) 2016-09-14 2018-11-20 Northrop Grumman Systems Corporation Micro hermetic sensor
CN116495697B (zh) * 2023-06-26 2023-09-08 南京睿芯峰电子科技有限公司 含空气桥芯片的sip塑封件及其制作方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3681134A (en) * 1968-05-31 1972-08-01 Westinghouse Electric Corp Microelectronic conductor configurations and methods of making the same
NL7608901A (nl) * 1976-08-11 1978-02-14 Philips Nv Werkwijze ter vervaardiging van een halfge- leiderinrichting en halfgeleiderinrichting vervaardigd door middel van een dergelijke werkwijze.
JPS6080264A (ja) * 1983-10-07 1985-05-08 Toshiba Corp 半導体装置
IT1184723B (it) * 1985-01-28 1987-10-28 Telettra Lab Telefon Transistore mesfet con strato d'aria tra le connessioni dell'elettrodo di gate al supporto e relativo procedimento difabbricazione

Also Published As

Publication number Publication date
US4916520A (en) 1990-04-10
JPS6481343A (en) 1989-03-27
DE3886329T2 (de) 1994-06-30
EP0309805B1 (de) 1993-12-15
EP0309805A1 (de) 1989-04-05

Similar Documents

Publication Publication Date Title
DE3886329D1 (de) Halbleiteranordnung mit Luftbrücken-Verbindungen.
DE3850855D1 (de) Halbleitervorrichtung.
DE3750110D1 (de) Lagebestimmungsgerät.
DE3886315D1 (de) Halbleiteranordnungen mit supraleitenden Verbindungen.
DE68917848D1 (de) Halbleiteranordnung.
DE68921421D1 (de) Halbleitervorrichtung.
DE3773957D1 (de) Halbleitervorrichtung.
DE3889563D1 (de) Halbleiteranordnung mit Schmelzsicherung.
DE3879333D1 (de) Halbleiteranordnung mit mehrschichtleiter.
DE3889354D1 (de) Halbleiteranordnung.
DE3879813D1 (de) Integrierte halbleiterschaltung mit signallinien.
NO884364L (no) Hoeyfrekvens-varmeinnretning.
DE3889570D1 (de) Halbleiterschaltung.
DE3882150D1 (de) Halbleiterspeichergeraet.
DE3581333D1 (de) Lichtemittierende halbleitervorrichtung.
DE3787721D1 (de) Steuerbares Leistungs-Halbleiterbauelement.
DE68917971D1 (de) Halbleitervorrichtung.
NO882194D0 (no) Fly-radaranordning.
DE3867587D1 (de) Halbleiterschaltungsvorrichtung.
DE3884881D1 (de) Halbleiterlaservorrichtung.
DE3854423D1 (de) Halbleiterlaservorrichtung.
DE3868435D1 (de) Halbleiterlaservorrichtung.
DE3875273D1 (de) Halbleiterlaser-vorrichtung.
KR890005864A (ko) 반도체 장치
DE68914885D1 (de) Halbleitervorrichtung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee