DE3868457D1 - Statische ram-halbleiterspeicheranordnung. - Google Patents
Statische ram-halbleiterspeicheranordnung.Info
- Publication number
- DE3868457D1 DE3868457D1 DE8888113070T DE3868457T DE3868457D1 DE 3868457 D1 DE3868457 D1 DE 3868457D1 DE 8888113070 T DE8888113070 T DE 8888113070T DE 3868457 T DE3868457 T DE 3868457T DE 3868457 D1 DE3868457 D1 DE 3868457D1
- Authority
- DE
- Germany
- Prior art keywords
- static ram
- semiconductor arrangement
- ram semiconductor
- arrangement
- static
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000003068 static effect Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62202389A JPS6446288A (en) | 1987-08-13 | 1987-08-13 | Semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3868457D1 true DE3868457D1 (de) | 1992-03-26 |
Family
ID=16456684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888113070T Expired - Lifetime DE3868457D1 (de) | 1987-08-13 | 1988-08-11 | Statische ram-halbleiterspeicheranordnung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4933905A (de) |
EP (1) | EP0303971B1 (de) |
JP (1) | JPS6446288A (de) |
KR (1) | KR910003389B1 (de) |
DE (1) | DE3868457D1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0762955B2 (ja) * | 1989-05-15 | 1995-07-05 | 株式会社東芝 | ダイナミック型ランダムアクセスメモリ |
US5155703A (en) * | 1990-07-06 | 1992-10-13 | Motorola, Inc. | Bicmos bit line load for a memory with improved reliability |
KR100208142B1 (ko) * | 1990-09-26 | 1999-07-15 | 가나이 쓰도무 | 반도체 메모리 |
JPH04360095A (ja) * | 1991-06-06 | 1992-12-14 | Nec Corp | 半導体記憶回路 |
US5226007A (en) * | 1991-08-14 | 1993-07-06 | Vlsi Technology, Inc. | Automatic shutoff for memory load device during write operation |
JP3057836B2 (ja) * | 1991-08-19 | 2000-07-04 | 日本電気株式会社 | 半導体記憶装置 |
JP2762826B2 (ja) * | 1992-03-09 | 1998-06-04 | 日本電気株式会社 | 半導体メモリ |
JP2780621B2 (ja) * | 1993-12-27 | 1998-07-30 | 日本電気株式会社 | 半導体記憶装置 |
US5471188A (en) * | 1994-10-07 | 1995-11-28 | International Business Machines Corporation | Fast comparator circuit |
JP3449676B2 (ja) * | 1996-10-03 | 2003-09-22 | シャープ株式会社 | 半導体記憶装置のビット線プリチャージ回路 |
KR100298030B1 (ko) * | 1998-03-27 | 2001-10-25 | 다니구찌 이찌로오, 기타오카 다카시 | 저전원전압하에서고속으로동작하는스태틱형반도체기억장치 |
US8588004B2 (en) | 2012-04-12 | 2013-11-19 | Lsi Corporation | Memory device having multi-port memory cell with expandable port configuration |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4195356A (en) * | 1978-11-16 | 1980-03-25 | Electronic Memories And Magnetics Corporation | Sense line termination circuit for semiconductor memory systems |
US4202045A (en) * | 1979-03-05 | 1980-05-06 | Motorola, Inc. | Write circuit for a read/write memory |
JPS5847792B2 (ja) * | 1979-07-26 | 1983-10-25 | 富士通株式会社 | ビット線制御回路 |
JPS592997B2 (ja) * | 1980-05-22 | 1984-01-21 | 富士通株式会社 | スタテイツクメモリ |
JPS6027114B2 (ja) * | 1980-07-24 | 1985-06-27 | 日本電気株式会社 | メモリ装置 |
JPH0770222B2 (ja) * | 1984-06-04 | 1995-07-31 | 株式会社日立製作所 | Mosスタテイツク型ram |
JPS6154096A (ja) * | 1984-08-24 | 1986-03-18 | Hitachi Ltd | 半導体記憶装置 |
US4730279A (en) * | 1985-03-30 | 1988-03-08 | Kabushiki Kaisha Toshiba | Static semiconductor memory device |
JPS61237290A (ja) * | 1985-04-12 | 1986-10-22 | Sony Corp | ビツト線駆動回路 |
JPS63166090A (ja) * | 1986-12-26 | 1988-07-09 | Toshiba Corp | スタティック型メモリ |
US4802129A (en) * | 1987-12-03 | 1989-01-31 | Motorola, Inc. | RAM with dual precharge circuit and write recovery circuitry |
-
1987
- 1987-08-13 JP JP62202389A patent/JPS6446288A/ja active Pending
-
1988
- 1988-08-04 KR KR1019880009940A patent/KR910003389B1/ko not_active IP Right Cessation
- 1988-08-08 US US07/229,879 patent/US4933905A/en not_active Expired - Lifetime
- 1988-08-11 DE DE8888113070T patent/DE3868457D1/de not_active Expired - Lifetime
- 1988-08-11 EP EP88113070A patent/EP0303971B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0303971A3 (en) | 1989-08-23 |
KR890004333A (ko) | 1989-04-21 |
EP0303971B1 (de) | 1992-02-19 |
EP0303971A2 (de) | 1989-02-22 |
US4933905A (en) | 1990-06-12 |
KR910003389B1 (ko) | 1991-05-28 |
JPS6446288A (en) | 1989-02-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |