JPS5329479B2 - - Google Patents

Info

Publication number: JPS5329479B2
Authority: JP; Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP11145473A

Other languages

Japanese (ja)

Other versions

JPS5062783A (de

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1973-10-05

Filing date

1973-10-05

Publication date

1978-08-21

1973-10-05 Application filed filed Critical

1973-10-05 Priority to JP11145473A priority Critical patent/JPS5329479B2/ja

1974-09-26 Priority to GB4194774A priority patent/GB1461869A/en

1974-10-04 Priority to NL7413156.A priority patent/NL163911C/xx

1974-10-04 Priority to DE2447536A priority patent/DE2447536C2/de

1975-05-28 Publication of JPS5062783A publication Critical patent/JPS5062783A/ja

1977-10-06 Priority to US05/839,770 priority patent/US4178604A/en

1978-08-21 Publication of JPS5329479B2 publication Critical patent/JPS5329479B2/ja

Status Expired legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Semiconductor Lasers (AREA)
Weting (AREA)

JP11145473A 1973-10-05 1973-10-05 Expired JPS5329479B2 (de)

Priority Applications (5)

Application Number	Priority Date	Filing Date	Title
JP11145473A JPS5329479B2 (de)	1973-10-05	1973-10-05
GB4194774A GB1461869A (en)	1973-10-05	1974-09-26	Semiconductor laser device
NL7413156.A NL163911C (nl)	1973-10-05	1974-10-04	Halfgeleiderlaserinrichting.
DE2447536A DE2447536C2 (de)	1973-10-05	1974-10-04	Halbleiterlaser
US05/839,770 US4178604A (en)	1973-10-05	1977-10-06	Semiconductor laser device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP11145473A JPS5329479B2 (de)	1973-10-05	1973-10-05

Publications (2)

Publication Number	Publication Date
JPS5062783A JPS5062783A (de)	1975-05-28
JPS5329479B2 true JPS5329479B2 (de)	1978-08-21

Family

ID=14561620

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP11145473A Expired JPS5329479B2 (de)	1973-10-05	1973-10-05

Country Status (4)

Country	Link
JP (1)	JPS5329479B2 (de)
DE (1)	DE2447536C2 (de)
GB (1)	GB1461869A (de)
NL (1)	NL163911C (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS51146196A (en) *	1975-06-11	1976-12-15	Hitachi Ltd	Diode laser
US4045749A (en) *	1975-11-24	1977-08-30	Xerox Corporation	Corrugation coupled twin guide laser
JPS58197788A (ja) *	1982-05-13	1983-11-17	Nippon Telegr & Teleph Corp <Ntt>	分布帰還形半導体レ−ザ装置の製造方法
JPS60145685A (ja) *	1984-01-09	1985-08-01	Nec Corp	分布帰還型半導体レ−ザ
JPS59155983A (ja) *	1983-02-24	1984-09-05	Sharp Corp	半導体レ−ザ素子の製造方法
JPS6017976A (ja) *	1983-07-11	1985-01-29	Fujitsu Ltd	半導体発光装置の製造方法
JPS6037793A (ja) *	1983-08-10	1985-02-27	Nec Corp	単一軸モ−ド半導体レ−ザ
JPS61113293A (ja) *	1984-11-07	1986-05-31	Sharp Corp	半導体レ−ザアレイ装置
JPS61222189A (ja) *	1985-03-15	1986-10-02	Sharp Corp	半導体レ−ザ
JPS6318686A (ja) *	1986-07-10	1988-01-26	Sharp Corp	半導体レ−ザ素子
DE3809609A1 (de) *	1988-03-22	1989-10-05	Siemens Ag	Laserdiode zur erzeugung streng monochromatischer laserstrahlung
DE3934865A1 (de) *	1989-10-19	1991-04-25	Siemens Ag	Hochfrequent modulierbarer halbleiterlaser

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3691476A (en) *	1970-12-31	1972-09-12	Bell Telephone Labor Inc	Double heterostructure laser diodes

1973
- 1973-10-05 JP JP11145473A patent/JPS5329479B2/ja not_active Expired
1974
- 1974-09-26 GB GB4194774A patent/GB1461869A/en not_active Expired
- 1974-10-04 NL NL7413156.A patent/NL163911C/xx not_active IP Right Cessation
- 1974-10-04 DE DE2447536A patent/DE2447536C2/de not_active Expired

Also Published As

Publication number	Publication date
GB1461869A (en)	1977-01-19
NL163911C (nl)	1980-10-15
NL7413156A (nl)	1975-04-08
DE2447536A1 (de)	1975-04-17
JPS5062783A (de)	1975-05-28
DE2447536C2 (de)	1983-09-15

Publication	Publication Date	Title
AR201758A1 (de)	1975-04-15
AU476761B2 (de)	1976-09-30
AU465372B2 (de)	1975-09-25
AR201235Q (de)	1975-02-21
AR201231Q (de)	1975-02-21
AU474593B2 (de)	1976-07-29
AU474511B2 (de)	1976-07-22
AU474838B2 (de)	1976-08-05
AU465453B2 (de)	1975-09-25
AU465434B2 (de)	1975-09-25
AU471343B2 (de)	1976-04-15
AU450229B2 (de)	1974-07-04
AU476714B2 (de)	1976-09-30
AR201229Q (de)	1975-02-21
AU466283B2 (de)	1975-10-23
AU476696B2 (de)	1976-09-30
AU472848B2 (de)	1976-06-03
AR199451A1 (de)	1974-08-30
AU477823B2 (de)	1975-06-19
AU461342B2 (de)	1975-05-22
AU471461B2 (de)	1976-04-29
AR200256A1 (de)	1974-10-31
AU476873B1 (de)	1975-01-09
AR210729A1 (de)	1977-09-15
AU477824B2 (de)	1975-07-17